Abstract: The present invention provides a driving assistance system and a driving assistance computation method that utilize a deep neural network architecture to achieve object detection and semantic segmentation functionalities in a single inference of the same model.

Abstract: An integrated circuit (IC) device includes a substrate having a front side, a back side below the front side, and first functional circuitry and a first electrostatic discharge (ESD) clamp circuit on the front side of the substrate. The IC device further includes a first connection tower that extends below the back side of the substrate and is connected to an input/output pad below the back side of the substrate, and one or more first front side conductors and one or more first front side vias which connect the first buried connection tower to the first functional circuitry and to the first ESD clamp circuit.

Abstract: An integrated circuit (IC) device includes a semiconductor substrate, a first connection tower, and one or more first front side conductors and one or more first front side metal vias. The semiconductor substrate includes a first semiconductor substrate segment having first functional circuitry and a second semiconductor substrate segment having a first electrostatic discharge (ESD) clamp circuit. The first connection tower connects to an input/output pad. The one or more first front side conductors and one or more first front side metal vias connect the first buried connection tower to the first functional circuitry in the first semiconductor substrate segment and to the first ESD clamp circuit in the second semiconductor substrate segment.

Abstract: A media docking device is provided and includes an input module, an output module, and a process module. The input module is electrically connected to a media source device. The output module is electrically connected to multiple media playing devices and obtains device data from the media playing devices. The process module transmits the device data and screen numbers to the media source device through the input module. When determining to perform a display switch procedure, the process module modifies the device data and the screen numbers, and transmits the modified device data and the modified screen numbers to the media source device through the input module. The process module also transmits media data from the media source device to the corresponding media playing device.

Abstract: A semiconductor device includes a semiconductor substrate having a first protected circuit; a first guard ring; and a second guard ring adjacent to the first guard ring and around the first protected circuit. The second guard ring includes a first via tower configured to provide a first reference voltage; a second via tower configured to provide a second reference voltage different than the first reference voltage; and at least a third via tower configured to provide the first reference voltage.

Abstract: A manufacturing method of an aluminum-based article having multi-angle visual color change characteristics is provided. The manufacturing method includes the steps of providing an aluminum-based article and performing a first anodizing treatment that at least includes cycling a first operation mode 50 times to 80 times on the aluminum-based article. The first operation mode includes a first constant-current density stage followed by a current density continuous-increasing stage. In the first constant-current density stage, a first current density is controlled to be constant in a range from 0.1 A/dm2 to 1.0 A/dm2 for 60 seconds to 120 seconds. In the current density continuous-increasing stage, the first current density is controlled to continuously increase by 5 to 10 increments, and each of the increments is in a range from 0.1 A/dm2 to 0.5 A/dm2 and within a time period from 3 seconds to 10 seconds.

Abstract: A micro light-emitting diode structure includes a first-type semiconductor layer, a light-emitting layer, a second-type semiconductor layer, and a base layer stacked with each other. A width of the light-emitting layer is greater than that of the first-type semiconductor layer and that of the second-type semiconductor layer. A width of the base layer is at least greater than that of the second-type semiconductor layer. A manufacturing method of the micro light-emitting diode structure by mixing dry etching and wet etching. The manufacturing method not only reduces the time that the semiconductor layers are in contact with the etching solution in the wet etching process to increase the etching stability, but avoids the dangling bond effect on the sidewall caused by the dry etching. Therefore, a combination of the advantages of the two etchings further increases the external quantum efficiency.

Abstract: A screwdriver tip structure includes a main body provided with an operation end. The operation end is provided with multiple first working sections and multiple second working sections. Each of the first working sections has a convex shape. Each of the second working sections has a concave shape. Each of the first working sections is provided with multiple grooves. Each of the first working sections has a first end and a second end. The second end has a diameter more than that of the first end. Each of the first working sections has a periphery provided with a phantom side face. The side face extends from the second end to the first end. Each of the grooves is provided with a first concave face. The first concave face of each of the grooves includes a first single arc.

Abstract: A method of fabricating a semiconductor device includes forming a semiconductor substrate having a first protected circuit, and forming a first guard ring around the first protected circuit including: forming a first wall configured to provide a first reference voltage; and forming a second wall configured to provide a second reference voltage different than the first reference voltage.

Abstract: A rectilinear-block placement method includes disposing a first sub-block of each flexible block on a layout area of a chip canvas according to a reference position, generating an edge-depth map relative to first sub-blocks of flexible blocks on the layout area, predicting positions of second sub-blocks of the flexible blocks with depth values on the edge-depth map by a machine learning model, and positioning the second sub-blocks on the layout area according to the predicted positions of the second sub-blocks of the flexible blocks.

Abstract: The present disclosure relates to a contamination controlled semiconductor processing system. The contamination controlled semiconductor processing system includes a processing chamber, a contamination detection system, and a contamination removal system. The processing chamber is configured to process a wafer. The contamination detection system is configured to determine whether a contamination level on a surface of the door is greater than a baseline level. The contamination removal system is configured to remove contaminants from the surface of the door in response to the contamination level being greater than the baseline level.

Abstract: The application discloses a method and a system for shaping flexible blocks on a chip canvas in an integrated circuit design. An input is received describing geometric features of flexible blocks. A set of flexible blocks are generated based on the input. Obtained block areas of the set of flexible blocks are computed. Whether the set of flexible blocks are legal is determined based on determining whether area differences between the obtained block areas and a plurality of required areas for the set of flexible blocks meet a requirement. The set of flexible blocks are updated until the set of flexible blocks are all legal.

Abstract: An information handling system has a SIM card slot that accepts a micro SIM card and also accepts a nano SIM card when inserted in an adapter having an outer perimeter of a micro SIM card. The adapter holds contact pads of the nano SIM card in alignment with spring contacts of SIM card socket. When the adapter is inserted into the SIM card socket without a nano SIM card, a contact cover coupled to an eject member has an opening through which spring contacts extend against contact pads, and when the eject member is pressed inward to eject the SIM card adapter, the contact cover moves inward to press down on the spring contacts so that the SIM card adapter is kept clear of the spring contact through ejection.

Abstract: A semiconductor package structure includes a first component, a bonding structure on the first component, a second component connected to the first component, and a copper connector on the second component. The bonding structure includes a copper base on the first component and copper protruding portions on the copper base. The second component is connected to the first component by bonding the copper protruding portions to the copper connector, and the copper protruding portions are in contact with the copper connector.

Abstract: A semiconductor pattern is provided in the present invention, including a first line extending to one end in a first direction and a second line extending in a second direction perpendicular to the first direction and adjacent to the end of the first line in the first direction, wherein the end of the first line is provided with a rounding feature, the first line has a width in the second direction, and the width is gradually increased to a maximum width toward the end and gradually converged to form the rounding feature.

Abstract: A circuit includes a voltage divider circuit configured to generate a feedback voltage according to an output voltage, an operational amplifier configured to output a driving signal according to the feedback voltage and a reference voltage and a pass gate circuit including multiple current paths. The current paths are controlled by the driving signal and connected in parallel between the voltage divider circuit and a power reference node.

Abstract: A decentralized information transmission system comprising: an information generating end, first and second blockchain networks, and an information receiving end, an information data transmitted by the generating end is encrypted by a public key into an encrypted file, a hash value is generated by a hash value generating module, the first blockchain network receives the hash value and the encrypted file, the second blockchain network receives the hash value and a receiving end address, the receiving end generates a data reading request for the second blockchain network, the second blockchain network transmits the hash value to the receiving end, the receiving end generates a data demanding request for the first blockchain network, the first blockchain network transmits the encrypted file to the receiving end, and the receiving end decrypts the encrypted file with a private key to obtain the information data transmitted by the generating end.

Abstract: An intelligent monitoring system for waste disposal and the method thereof are provided, which include a plurality of operational devices and stages. First, a transportation stage is performed to loading a transport vehicle with a waste so as to transport the waste to a disposal station for further treatment. A camera and a sensor for detecting abnormal conditions are installed any one of the operational devices or installed in the operational path of any one of the operational devices. The camera records the videos of the operational stages, captures the images from the videos and recognizes the images in order to determine whether the abnormal conditions occur in any one of the operational stages. Alternatively, the camera is triggered to capture the images and recognize the images after the abnormal conditions are detected by the sensor in order to determine whether the abnormal conditions actually occur.

Abstract: A screwdriver tip structure includes a main body provided with an operation end. The operation end is provided with multiple first working sections and multiple second working sections. Each of the first working sections has a convex shape. Each of the second working sections has a concave shape. Each of the first working sections is provided with multiple grooves. Each of the first working sections has a first end and a second end. The second end has a diameter more than that of the first end. Each of the first working sections has a periphery provided with a phantom side face. The side face extends from the second end to the first end. Each of the grooves is provided with a first concave face. The first concave face of each of the grooves includes a first single arc.

Abstract: The present disclosure describes a semiconductor structure with a metal ion capture layer and a method for forming the structure. The method includes forming a first fin structure and a second fin structure on a substrate and forming a first gate structure over the first fin structure and a second gate structure over the second fin structure, where the first gate structure adjoins the second gate structure. The method further includes forming a dielectric layer on the first and second gate structures, removing a portion of the dielectric layer above an adjoining portion of the first and second gate structures to form an opening, and forming a metal ion capture layer in the opening.