Abstract: The disclosure provides a method for an electronic device including a lens; a plurality of light sources disposed on or adjacent to an edge of the lens, and configured to illuminate an eye of a user; at least one camera disposed adjacent to the edge of the lens, and configured to capture an image of the eye; and a controller configured to perform eye tracking for the user based on the image captured by the at least one camera. According to the embodiments of the disclosure, on a premise that the characteristics of the lens are not affected by the electronic device, a feasibility of capturing the eye image and quality of the image are ensured.

Abstract: A medical device (100), comprising: a stent graft (110), defined thereon with an opening (111); a catheter (120), configured to be partially arranged inside the stent graft (110); and a restraint member (130), configured to apply a radial compression force to the stent graft (110), so as to radially compress the stent graft (110) into a compressed configuration; the medical device (100) is configured so that the opening (111) is in positional correspondence with a distal end of the catheter (120) when the stent graft (110) is in the compressed configuration; the distal end refers to an end that first enters a body of a patient during use of the medical device (100). The medical device (100) can be used for the treatment for vascular lesions involving the aortic arch, which is favorable for establishing access in the branch vessel and shortening the operation duration.

Abstract: An optical device is provided, including a body formed to have a concavity within which an eye box region is defined; and a plurality of addressable vertical cavity surface emitting laser (VCSEL) arrays arranged in the body of the optical device. The one or more VCSEL arrays comprise a plurality of VCSEL subarrays including independently addressable first and second VCSEL subarrays, which are controlled so as to power the first VCSEL subarray and not the second VCSEL subarray to illuminate only a first subregion of the eye box region, or to power the second VCSEL subarray and not the first VCSEL subarray to only illuminate a second subregion of the eye box region.

Abstract: An optical device is provided, including a body formed to have a concavity within which an eye box region is defined; and a plurality of addressable vertical cavity surface emitting laser (VCSEL) arrays arranged in the body of the optical device. The one or more VCSEL arrays comprise a plurality of VCSEL subarrays including independently addressable first and second VCSEL subarrays, which are controlled so as to power the first VCSEL subarray and not the second VCSEL subarray to illuminate only a first subregion of the eye box region, or to power the second VCSEL subarray and not the first VCSEL subarray to only illuminate a second subregion of the eye box region.

Abstract: A covered stent and a medical device. The medical device includes a covered stent including a main stent and a first branch stent. A first interface, a second interface and a third interface are provided on a side surface of the main stent and spaced along an axial direction of the main stent, the first interface receives the first branch stent, the second interface receives a second branch stent, and/or the third interface receives a third branch stent. The covered stent further includes a restraining assembly arranged on the main stent, and the restraining assembly applies to the main stent a tensile force toward an inner cavity of the main stent. At least a portion of the main stent that is provided with the second interface and the third interface is recessed toward the inner cavity of the main stent.

Abstract: Systems, methods, and computer-readable media are disclosed for improved camera color calibration. An example method may involve capturing a first wavelength emitted by a first type of traffic light. The example method may also involve determining, based on the first wavelength, a first color value associated with the wavelength emitted by the first type of traffic light. The example method may also involve capturing, by a first camera, a first image, video, or real-time feed of a first portion of a test target, the first portion of the test target including a first light color that is based on the first color value. The example method may also involve determining, based on the first image, video, or real-time feed of the first portion of a test target, a second color value output by the camera. The example method may also involve determining, based on a comparison between the first color value and the second color value, that a difference exists between the first color value and the second color value.

Abstract: Systems, methods, and computer-readable media are disclosed for improved camera color calibration. An example method may involve capturing a first wavelength emitted by a first type of traffic light. The example method may also involve determining, based on the first wavelength, a first color value associated with the wavelength emitted by the first type of traffic light. The example method may also involve capturing, by a first camera, a first image, video, or real-time feed of a first portion of a test target, the first portion of the test target including a first light color that is based on the first color value. The example method may also involve determining, based on the first image, video, or real-time feed of the first portion of a test target, a second color value output by the camera. The example method may also involve determining, based on a comparison between the first color value and the second color value, that a difference exists between the first color value and the second color value.

Abstract: The present disclosure provides a monitoring wafer and a monitoring system. The monitoring wafer includes: an initial wafer, a searchlight module, a data acquisition module and a wireless transmission module, the searchlight module is configured to emit searchlight to the wafer chuck, the data acquisition module is configured to acquire searchlight information of the searchlight on the wafer chuck, and the wireless transmission module is configured to receive and transmit the searchlight information.

Abstract: An active depth imaging system and method of operating the same captures illuminator-on and illuminator-off image data with each of a first and second imager. The illuminator-on image data includes information representing an imaged scene and light emitted from an illuminator and reflected off of objects within the imaged scene. The illuminator-off image data includes information representing the imaged scene without the light emitted from the illuminator. For each image set captured by the first and second imagers, illuminator-off image data is subtracted from the illuminator-on image data to identify the illuminated light within the scene. The depth of an object at which the light is incident on then is determined by the subtracted image data of the first and second imagers.

Abstract: A method for high-throughput assay processing includes (a) modulating temperature of a plurality of samples disposed in a respective plurality of fluidic channels on an image sensor wafer, including a plurality of image sensors, by heating the image sensor wafer using a heating module thermally coupled with the image sensor wafer, to control reaction dynamics in the samples, and (b) capturing a plurality of fluorescence images of the samples, using the plurality of image sensors, to detect one or more components of the plurality of samples. A method for manufacturing a high-throughput fluorescence imaging system with sample heating capability includes (a) bonding a fluidic wafer, including a plurality of recesses, to an image sensor wafer including a plurality of image sensors, and (b) bonding a heating module, including a heater for generating heat, to the image sensor wafer to thermally couple the heater and the image sensor wafer.

Abstract: An avalanche photodiode has a first diffused region of a first diffusion type overlying at least in part a second diffused region of a second diffusion type; and a first minority carrier sink region disposed within the first diffused region, the first minority carrier sink region of the second diffusion type and electrically connected to the first diffused region. In particular embodiments, the first diffusion type is N-type and the second diffusion type is P-type, and the device is biased so that a depletion zone having avalanche multiplication exists between the first and second diffused regions.

Abstract: A photon detection device includes a single photon avalanche diode (SPAD) disposed in a semiconductor layer. A guard ring structure is disposed in the semiconductor layer surrounding the SPAD to isolate the SPAD. A well region is disposed in the semiconductor layer surrounding the guard ring structure and disposed along an outside perimeter of the photon detection device. A contact region is disposed in the well region only in a corner region of the outside perimeter such that there is no contact region disposed along side regions of the outside perimeter. A distance between an inside edge of the guard ring structure and the contact region in the corner region of the outside perimeter is greater than a distance between the inside edge of the guard ring structure and the side regions of the outside perimeter such that an electric field distribution is uniform around the photon detection device.

Abstract: A photon detection device includes a single photon avalanche diode (SPAD) including a multiplication junction defined at an interface between n doped and p doped layers of the SPAD in a first region of a semiconductor layer. A vertical gate structure surrounds the SPAD in the semiconductor layer to isolate the SPAD in the first region from a second region of the semiconductor layer on an opposite side of the vertical gate structure. The SPAD laterally extends within the first region of semiconductor layer to the vertical gate structure. An inversion layer is generated in the SPAD around a perimeter of the SPAD proximate to the vertical gate structure in response to a gate bias voltage coupled to the vertical gate structure. The inversion layer isolates the SPAD from the second region of the semiconductor layer on the opposite side of the vertical gate structure.

Abstract: An active depth imaging system and method of operating the same captures illuminator-on and illuminator-off image data with each of a first and second imager. The illuminator-on image data includes information representing an imaged scene and light emitted from an illuminator and reflected off of objects within the imaged scene. The illuminator-off image data includes information representing the imaged scene without the light emitted from the illuminator. For each image set captured by the first and second imagers, illuminator-off image data is subtracted from the illuminator-on image data to identify the illuminated light within the scene. The depth of an object at which the light is incident on then is determined by the subtracted image data of the first and second imagers.

Abstract: An avalanche photodiode has a first diffused region of a first diffusion type overlying at least in part a second diffused region of a second diffusion type; and a first minority carrier sink region disposed within the first diffused region, the first minority carrier sink region of the second diffusion type and electrically connected to the first diffused region. In particular embodiments, the first diffusion type is N-type and the second diffusion type is P-type, and the device is biased so that a depletion zone having avalanche multiplication exists between the first and second diffused regions.

Abstract: A photon detection device includes a single photon avalanche diode (SPAD) including a multiplication junction defined at an interface between n doped and p doped layers of the SPAD in a first region of a semiconductor layer. A vertical gate structure surrounds the SPAD in the semiconductor layer to isolate the SPAD in the first region from a second region of the semiconductor layer on an opposite side of the vertical gate structure. The SPAD laterally extends within the first region of semiconductor layer to the vertical gate structure. An inversion layer is generated in the SPAD around a perimeter of the SPAD proximate to the vertical gate structure in response to a gate bias voltage coupled to the vertical gate structure. The inversion layer isolates the SPAD from the second region of the semiconductor layer on the opposite side of the vertical gate structure.

Abstract: A photon detection device includes a single photon avalanche diode (SPAD) disposed in a semiconductor layer. A guard ring structure is disposed in the semiconductor layer surrounding the SPAD to isolate the SPAD. A well region is disposed in the semiconductor layer surrounding the guard ring structure and disposed along an outside perimeter of the photon detection device. A contact region is disposed in the well region only in a corner region of the outside perimeter such that there is no contact region disposed along side regions of the outside perimeter. A distance between an inside edge of the guard ring structure and the contact region in the corner region of the outside perimeter is greater than a distance between the inside edge of the guard ring structure and the side regions of the outside perimeter such that an electric field distribution is uniform around the photon detection device.

Abstract: A method for high-throughput assay processing includes (a) modulating temperature of a plurality of samples disposed in a respective plurality of fluidic channels on an image sensor wafer, including a plurality of image sensors, by heating the image sensor wafer using a heating module thermally coupled with the image sensor wafer, to control reaction dynamics in the samples, and (b) capturing a plurality of fluorescence images of the samples, using the plurality of image sensors, to detect one or more components of the plurality of samples. A method for manufacturing a high-throughput fluorescence imaging system with sample heating capability includes (a) bonding a fluidic wafer, including a plurality of recesses, to an image sensor wafer including a plurality of image sensors, and (b) bonding a heating module, including a heater for generating heat, to the image sensor wafer to thermally couple the heater and the image sensor wafer.

Abstract: An imaging system with single-photon-avalanche-diodes (SPADs) and sensor translation for capturing a plurality of first images to enable generation of an enhanced-resolution image includes (a) an image sensor with SPAD pixels for capturing the plurality of first images at a plurality of spatially shifted positions of the image sensor, respectively, and (b) an actuator for translating the image sensor, parallel to its light receiving surface, to place the image sensor at the plurality of spatially shifted positions. A method for capturing a plurality of first images that enable composition of an enhanced-resolution image includes (a) translating an image sensor parallel to its light receiving surface to place the image sensor at a plurality of spatially shifted positions, and (b) capturing, using SPAD pixels implemented in pixel array of the image sensor, the plurality of first images at the plurality of spatially shifted positions, respectively.

Abstract: A high-throughput fluorescence imaging system with sample heating capability includes an image sensor wafer with a plurality of image sensors for fluorescence imaging a plurality of samples disposed in a respective plurality of fluidic channels on the image sensor wafer. The high-throughput fluorescence imaging system further includes a heating module, thermally coupled with the image sensor wafer, for heating the samples. A method for high-throughput assay processing includes modulating temperature of a plurality of samples disposed in a respective plurality of fluidic channels on an image sensor wafer by heating the image sensor wafer, using a heating module thermally coupled with the image sensor wafer, to control reaction dynamics in the samples; and capturing a plurality of fluorescence images of the samples, using a respective plurality of image sensors of the image sensor wafer, to detect one or more components of the plurality of samples.