Patents by Inventor Bowei Zhang

Bowei Zhang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20160373676
    Abstract: An imaging system with single-photon-avalanche-diodes (SPADs) and sensor translation for capturing a plurality of first images to enable generation of an enhanced-resolution image includes (a) an image sensor with SPAD pixels for capturing the plurality of first images at a plurality of spatially shifted positions of the image sensor, respectively, and (b) an actuator for translating the image sensor, parallel to its light receiving surface, to place the image sensor at the plurality of spatially shifted positions. A method for capturing a plurality of first images that enable composition of an enhanced-resolution image includes (a) translating an image sensor parallel to its light receiving surface to place the image sensor at a plurality of spatially shifted positions, and (b) capturing, using SPAD pixels implemented in pixel array of the image sensor, the plurality of first images at the plurality of spatially shifted positions, respectively.
    Type: Application
    Filed: June 22, 2015
    Publication date: December 22, 2016
    Inventors: Bowei Zhang, Ming-Kai Hsu
  • Publication number: 20160116409
    Abstract: A color-sensitive image sensor with embedded microfluidics includes a silicon substrate having (a) at least one recess partly defining at least one embedded microfluidic channel and (b) a plurality of photosensitive regions for generating position-sensitive electrical signals in response to light from the at least one recess, wherein at least two of the photosensitive regions are respectively located at at least two mutually different depth ranges, relative to the at least one recess, to provide color information. A wafer-level manufacturing method produces a plurality of such color-sensitive image sensors. A method for generating a color image of a fluidic sample includes performing imaging, onto a plurality of photosensitive regions of a silicon substrate, of a fluidic sample deposited in a microfluidic channel embedded in the silicon substrate, and generating color information based upon penetration depth of light into the silicon substrate.
    Type: Application
    Filed: October 28, 2014
    Publication date: April 28, 2016
    Inventors: Dominic Massetti, Bowei Zhang
  • Publication number: 20160103068
    Abstract: A high-throughput fluorescence imaging system with sample heating capability includes an image sensor wafer with a plurality of image sensors for fluorescence imaging a plurality of samples disposed in a respective plurality of fluidic channels on the image sensor wafer. The high-throughput fluorescence imaging system further includes a heating module, thermally coupled with the image sensor wafer, for heating the samples. A method for high-throughput assay processing includes modulating temperature of a plurality of samples disposed in a respective plurality of fluidic channels on an image sensor wafer by heating the image sensor wafer, using a heating module thermally coupled with the image sensor wafer, to control reaction dynamics in the samples; and capturing a plurality of fluorescence images of the samples, using a respective plurality of image sensors of the image sensor wafer, to detect one or more components of the plurality of samples.
    Type: Application
    Filed: October 14, 2014
    Publication date: April 14, 2016
    Inventor: Bowei Zhang
  • Patent number: 9160949
    Abstract: A photon detection device includes a photodiode having a planar junction disposed in a first region of semiconductor material. A deep trench isolation (DTI) structure is disposed in the semiconductor material. The DTI structure isolates the first region of the semiconductor material on one side of the DTI structure from a second region of the semiconductor material on an other side of the DTI structure. The DTI structure includes a dielectric layer lining an inside surface of the DTI structure and doped semiconductor material disposed over the dielectric layer inside the DTI structure. The doped semiconductor material disposed inside the DTI structure is coupled to a bias voltage to isolate the photodiode in the first region of the semiconductor material from the second region of the semiconductor material.
    Type: Grant
    Filed: April 1, 2013
    Date of Patent: October 13, 2015
    Assignee: OmniVision Technologies, Inc.
    Inventors: Bowei Zhang, Zhiqiang Lin
  • Patent number: 9116145
    Abstract: A flexible IC/microfluidic hybrid integration and packaging method and resulting device. A single flexible elastomer substrate, such as polydimethylsiloxane (PDMS), has dedicated microchannels filled with liquid metals (or low melting point solders) to provide electrical interconnects to a solid-state IC die, such as CMOS, and additional microchannels for hybrid integration with microfluidics without performing any post-processing on the IC die. The liquid metal used can be a gallium-indium-tin eutectic alloy (also called Galinstan).
    Type: Grant
    Filed: December 14, 2012
    Date of Patent: August 25, 2015
    Assignee: The George Washington University
    Inventors: Zhenyu Li, Mona E. Zaghloul, Bowei Zhang, Can E. Korman
  • Publication number: 20140291481
    Abstract: A photon detection device includes a photodiode having a planar junction disposed in a first region of semiconductor material. A deep trench isolation (DTI) structure is disposed in the semiconductor material. The DTI structure isolates the first region of the semiconductor material on one side of the DTI structure from a second region of the semiconductor material on an other side of the DTI structure. The DTI structure includes a dielectric layer lining an inside surface of the DTI structure and doped semiconductor material disposed over the dielectric layer inside the DTI structure. The doped semiconductor material disposed inside the DTI structure is coupled to a bias voltage to isolate the photodiode in the first region of the semiconductor material from the second region of the semiconductor material.
    Type: Application
    Filed: April 1, 2013
    Publication date: October 2, 2014
    Applicant: OMNIVISION TECHNOLOGIES, INC.
    Inventors: Bowei Zhang, Zhiqiang Lin
  • Patent number: 8847117
    Abstract: There is described a method for stabilizing a post-trimming resistance of a thermally isolated electrical component made from a thermally mutable material, the method comprising: generating at least one heating pulse, the at least one heating pulse having an initial amplitude corresponding to a trimming temperature, a slope corresponding to a given cooling rate and a duration corresponding to a given cooling time; and applying the at least one heating pulse to one of the thermally isolated electrical component and a heating device in heat transfer communication with the thermally isolated electrical component, after a trimming process, in order to cause the electrical component to cool in accordance with the given cooling rate, the given cooling rate being slower than a passive cooling rate determined by the thermal isolation of the electrical component.
    Type: Grant
    Filed: March 16, 2009
    Date of Patent: September 30, 2014
    Assignee: Sensortechnics GmbH
    Inventors: Oleg Grudin, Yougui Liao, Leslie M. Landsberger, Gennadiy Frolov, Lyudmila Grudina, Gerald Arzoumanian, Saed Salman, Tommy Tsang, Bowei Zhang
  • Publication number: 20130243655
    Abstract: A flexible IC/microfluidic hybrid integration and packaging method and resulting device. A single flexible elastomer substrate, such as polydimethylsiloxane (PDMS), has dedicated microchannels filled with liquid metals (or low melting point solders) to provide electrical interconnects to a solid-state IC die, such as CMOS, and additional microchannels for hybrid integration with microfluidics without performing any post-processing on the IC die. The liquid metal used can be a gallium-indium-tin eutectic alloy (also called Galinstan).
    Type: Application
    Filed: December 14, 2012
    Publication date: September 19, 2013
    Applicant: The George Washington University
    Inventors: Zhenyu LI, Mona E. ZAGHLOUL, Bowei ZHANG, Can E. KORMAN
  • Patent number: 8111128
    Abstract: A method for arranging a plurality of thermally isolated microstructures over at least one cavity, each of the microstructures housing at least part of a thermally-trimmable resistor, the thermally-trimmable resistor having at least a functional resistor, the method comprising: providing pairs of facing microstructures; grouping together sets of pairs of facing microstructures, each of the sets having at least one pair of facing microstructures; and arranging microstructures within a given set to have each microstructure exposed to heat from a same number of facing, side, and diagonal neighbors of microstructures from a same resistor.
    Type: Grant
    Filed: February 6, 2008
    Date of Patent: February 7, 2012
    Assignee: Sensortechnics GmbH
    Inventors: Oleg Grudin, Salman Saed, Tommy Tsang, Bowei Zhang, Leslie M. Landsberger, L. Richard Williston
  • Publication number: 20110220631
    Abstract: There is described a method for stabilizing a post-trimming resistance of a thermally isolated electrical component made from a thermally mutable material, the method comprising: generating at least one heating pulse, the at least one heating pulse having an initial amplitude corresponding to a trimming temperature, a slope corresponding to a given cooling rate and a duration corresponding to a given cooling time; and applying the at least one heating pulse to one of the thermally isolated electrical component and a heating device in heat transfer communication with the thermally isolated electrical component, after a trimming process, in order to cause the electrical component to cool in accordance with the given cooling rate, the given cooling rate being slower than a passive cooling rate determined by the thermal isolation of the electrical component
    Type: Application
    Filed: March 16, 2009
    Publication date: September 15, 2011
    Inventors: Oleg Grudin, Yougui Liao, Leslie M. Landsberger, Gennadiy Frolov, Lyudmila Grudina, Gerald Arzoumanian, Saed Salman, Tommy Tsang, Bowei Zhang
  • Publication number: 20100073121
    Abstract: A method for arranging a plurality of thermally isolated microstructures over at least one cavity, each of the microstructures housing at least part of a thermally-trimmable resistor, the thermally-trimmable resistor having at least a functional resistor, the method comprising: providing pairs of facing microstructures; grouping together sets of pairs of facing microstructures, each of the sets having at least one pair of facing microstructures; and arranging microstructures within a given set to have each microstructure exposed to heat from a same number of facing, side, and diagonal neighbors of microstructures from a same resistor.
    Type: Application
    Filed: February 6, 2008
    Publication date: March 25, 2010
    Applicant: MICROBRIDGE TECHNOLOGIES INC.
    Inventors: Oleg Grudin, Salman Saed, Tommy Tsang, Bowei Zhang, Leslie M. Landsberger, L. Richard Williston