Patents by Inventor Bradley E. Williams
Bradley E. Williams has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11843083Abstract: Monolithic LED chips are disclosed comprising a plurality of active regions on a submount, wherein the submount comprises integral electrically conductive interconnect elements in electrical contact with the active regions and electrically connecting at least some of the active regions in series. The submount also comprises an integral insulator element electrically insulating at least some of the interconnect elements and active regions from other elements of the submount. The active regions are mounted in close proximity to one another to minimize the visibility of the space during operation. The LED chips can also comprise layers structures and compositions that avow improved reliability under high current operation.Type: GrantFiled: January 17, 2023Date of Patent: December 12, 2023Assignee: CreeLED, Inc.Inventors: Bradley E. Williams, Kevin W. Haberern, Bennett D. Langsdorf, Manuel L. Breva
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Publication number: 20230155087Abstract: Monolithic LED chips are disclosed comprising a plurality of active regions on a submount, wherein the submount comprises integral electrically conductive interconnect elements in electrical contact with the active regions and electrically connecting at least some of the active regions in series, The submount also comprises an integral insulator element electrically insulating at least some of the interconnect elements and active regions from other elements of the submount. The active regions are mounted in close proximity to one another to minimize the visibility of the space during operation. The LED chips can also comprise layers structures and compositions that avow improved reliability under high current operation.Type: ApplicationFiled: January 17, 2023Publication date: May 18, 2023Inventors: Bradley E. Williams, Kevin W. Haberern, Bennett D. Langsdorf, Manuel L. Breva
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Patent number: 11588083Abstract: Monolithic LED chips are disclosed comprising a plurality of active regions on a submount, wherein the submount comprises integral electrically conductive interconnect elements in electrical contact with the active regions and electrically connecting at least some of the active regions in series. The submount also comprises an integral insulator element electrically insulating at least some of the interconnect elements and active regions from other elements of the submount. The active regions are mounted in close proximity to one another to minimize the visibility of the space during operation. The LED chips can also comprise layers structures and compositions that allow improved reliability under high current operation.Type: GrantFiled: July 31, 2020Date of Patent: February 21, 2023Assignee: CREELED, INC.Inventors: Bradley E. Williams, Kevin W. Haberern, Bennett D. Langsdorf, Manuel L. Breva
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Patent number: 10957830Abstract: Monolithic LED chips are disclosed comprising a plurality of active regions on a submount, wherein the submount comprises integral electrically conductive interconnect elements in electrical contact with the active regions and electrically connecting at least some of the active regions in series. The submount also comprises an integral insulator element electrically insulating at least some of the interconnect elements and active regions from other elements of the submount. The active regions are mounted in close proximity to one another to minimize the visibility of the space during operation. The LED chips can also comprise layers structures and compositions that allow improved reliability under high current operation.Type: GrantFiled: March 1, 2019Date of Patent: March 23, 2021Assignee: Cree, Inc.Inventors: Bradley E Williams, Kevin W Haberern, Bennett D Langsdorf, Manuel L Breva
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Publication number: 20200365782Abstract: Monolithic LED chips are disclosed comprising a plurality of active regions on a submount, wherein the submount comprises integral electrically conductive interconnect elements in electrical contact with the active regions and electrically connecting at least some of the active regions in series. The submount also comprises an integral insulator element electrically insulating at least some of the interconnect elements and active regions from other elements of the submount. The active regions are mounted in close proximity to one another to minimize the visibility of the space during operation. The LED chips can also comprise layers structures and compositions that allow improved reliability under high current operation.Type: ApplicationFiled: July 31, 2020Publication date: November 19, 2020Inventors: Bradley E. Williams, Kevin W. Haberern, Bennett D. Langsdorf, Manuel L. Breva
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Patent number: 10734558Abstract: Monolithic LED chips are disclosed comprising a plurality of active regions on a submount, wherein the submount comprises integral electrically conductive interconnect elements in electrical contact with the active regions and electrically connecting at least some of the active regions in series. The submount also comprises an integral insulator element electrically insulating at least some of the interconnect elements and active regions from other elements of the submount. The active regions are mounted in close proximity to one another to minimize the visibility of the space during operation. The LED chips can also comprise layers structures and compositions that allow improved reliability under high current operation.Type: GrantFiled: March 1, 2019Date of Patent: August 4, 2020Assignee: Cree Huizhou Solid State Lighting Company LimitedInventors: Bradley E Williams, Kevin W Haberern, Bennett D Langsdorf, Manuel L Breva
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Publication number: 20190198734Abstract: Monolithic LED chips are disclosed comprising a plurality of active regions on a submount, wherein the submount comprises integral electrically conductive interconnect elements in electrical contact with the active regions and electrically connecting at least some of the active regions in series. The submount also comprises an integral insulator element electrically insulating at least some of the interconnect elements and active regions from other elements of the submount. The active regions are mounted in close proximity to one another to minimize the visibility of the space during operation. The LED chips can also comprise layers structures and compositions that allow improved reliability under high current operation.Type: ApplicationFiled: March 1, 2019Publication date: June 27, 2019Inventors: BRADLEY E. WILLIAMS, KEVIN W. HABERERN, BENNETT D. LANGSDORF, MANUEL L. BREVA
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Patent number: 10283681Abstract: A phosphor-converted light emitting device includes a light emitting diode (LED) on a substrate, where the LED comprises a stack of epitaxial layers comprising a p-n junction. A wavelength conversion material is in optical communication with the LED. According to one embodiment of the phosphor-converted light emitting device, a selective filter is adjacent to the wavelength conversion material, and the selective filter comprises a plurality of nanoparticles for absorbing light from the LED not down-converted by the wavelength conversion material. According to another embodiment of the phosphor-converted light emitting device, a perpendicular distance between a perimeter of the LED on the substrate and an edge of the substrate is at least about 24 microns. According to another embodiment of the phosphor-converted light emitting device, the LED comprises a mirror layer on one or more sidewalls thereof for reducing light leakage through the sidewalls.Type: GrantFiled: May 14, 2014Date of Patent: May 7, 2019Assignee: Cree, Inc.Inventors: Brian T. Collins, Matthew Donofrio, Kevin W. Haberern, Bennett Langsdorf, Anoop Mathew, Harry A. Seibel, Iliya Todorov, Bradley E. Williams
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Patent number: 10243121Abstract: Monolithic LED chips are disclosed comprising a plurality of active regions on a submount, wherein the submount comprises integral electrically conductive interconnect elements in electrical contact with the active regions and electrically connecting at least some of the active regions in series. The submount also comprises an integral insulator element electrically insulating at least some of the interconnect elements and active regions from other elements of the submount. The active regions are mounted in close proximity to one another to minimize the visibility of the space during operation. The LED chips can also comprise layers structures and compositions that allow improved reliability under high current operation.Type: GrantFiled: April 29, 2015Date of Patent: March 26, 2019Assignee: Cree, Inc.Inventors: Bradley E Williams, Kevin W Haberern, Bennett D Langsdorf, Manuel L Breva
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Patent number: 9437785Abstract: Light emitting diodes include a silicon carbide substrate having first and second opposing faces, a diode region on the first face, anode and cathode contacts on the diode region opposite the silicon carbide substrate and a hybrid reflector on the silicon carbide substrate opposite the diode region. The hybrid reflector includes a transparent layer having an index of refraction that is lower than the silicon carbide substrate, and a reflective layer on the transparent layer, opposite the substrate. A die attach layer may be provided on the hybrid reflector, opposite the silicon carbide substrate. A barrier layer may be provided between the hybrid reflector and the die attach layer.Type: GrantFiled: August 10, 2009Date of Patent: September 6, 2016Assignee: Cree, Inc.Inventors: Michael John Bergmann, Kevin Ward Haberern, Bradley E. Williams, Winston T. Parker, Arthur Fong-Yuen Pun, Doowon Suh, Matthew Donofrio
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Publication number: 20150249196Abstract: Monolithic LED chips are disclosed comprising a plurality of active regions on a submount, wherein the submount comprises integral electrically conductive interconnect elements in electrical contact with the active regions and electrically connecting at least some of the active regions in series. The submount also comprises an integral insulator element electrically insulating at least some of the interconnect elements and active regions from other elements of the submount. The active regions are mounted in close proximity to one another to minimize the visibility of the space during operation. The LED chips can also comprise layers structures and compositions that allow improved reliability under high current operation.Type: ApplicationFiled: April 29, 2015Publication date: September 3, 2015Inventors: BRADLEY E. WILLIAMS, Kevin W. Haberern, Bennett D. Langsdorf, Manuel L. Breva
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Publication number: 20150069430Abstract: A phosphor-converted light emitting device includes a light emitting diode (LED) on a substrate, where the LED comprises a stack of epitaxial layers comprising a p-n junction. A wavelength conversion material is in optical communication with the LED. According to one embodiment of the phosphor-converted light emitting device, a selective filter is adjacent to the wavelength conversion material, and the selective filter comprises a plurality of nanoparticles for absorbing light from the LED not down-converted by the wavelength conversion material. According to another embodiment of the phosphor-converted light emitting device, a perpendicular distance between a perimeter of the LED on the substrate and an edge of the substrate is at least about 24 microns. According to another embodiment of the phosphor-converted light emitting device, the LED comprises a mirror layer on one or more sidewalls thereof for reducing light leakage through the sidewalls.Type: ApplicationFiled: May 14, 2014Publication date: March 12, 2015Inventors: Brian T. Collins, Matthew Donofrio, Kevin W. Haberern, Bennett Langsdorf, Anoop Mathew, Harry A. Seibel, Iliya Todorov, Bradley E. Williams
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Patent number: 8907366Abstract: Semiconductor light emitting devices, such as light emitting diodes, include a substrate, an epitaxial region on the substrate that includes a light emitting region such as a light emitting diode region, and a multilayer conductive stack including a current spreading layer, on the epitaxial region. A barrier layer is provided on the current spreading layer and extending on a sidewall of the current spreading layer. The multilayer conductive stack can also include an ohmic layer between the reflector and the epitaxial region. The barrier layer further extends on a sidewall of the ohmic layer. The barrier layer can also extend onto the epitaxial region outside the multilayer conductive stack. The barrier layer can be fabricated as a series of alternating first and second sublayers.Type: GrantFiled: October 30, 2013Date of Patent: December 9, 2014Assignee: Cree, Inc.Inventors: David B. Slater, Jr., Bradley E. Williams, Peter S. Andrews, John A. Edmond, Scott T. Allen
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Publication number: 20140048822Abstract: Semiconductor light emitting devices, such as light emitting diodes, include a substrate, an epitaxial region on the substrate that includes a light emitting region such as a light emitting diode region, and a multilayer conductive stack including a current spreading layer, on the epitaxial region. A barrier layer is provided on the current spreading layer and extending on a sidewall of the current spreading layer. The multilayer conductive stack can also include an ohmic layer between the reflector and the epitaxial region. The barrier layer further extends on a sidewall of the ohmic layer. The barrier layer can also extend onto the epitaxial region outside the multilayer conductive stack. The barrier layer can be fabricated as a series of alternating first and second sublayers.Type: ApplicationFiled: October 30, 2013Publication date: February 20, 2014Applicant: Cree, Inc.Inventors: David B. Slater, JR., Bradley E. Williams, Peter S. Andrews, John A. Edmond, Scott T. Allen
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Patent number: 8604502Abstract: Semiconductor light emitting devices, such as light emitting diodes, include a substrate, an epitaxial region on the substrate that includes a light emitting region such as a light emitting diode region, and a multilayer conductive stack including a reflector layer, on the epitaxial region. A barrier layer is provided on the reflector layer and extending on a sidewall of the reflector layer. The multilayer conductive stack can also include an ohmic layer between the reflector and the epitaxial region. The barrier layer further extends on a sidewall of the ohmic layer. The barrier layer can also extend onto the epitaxial region outside the multilayer conductive stack. The barrier layer can be fabricated as a series of alternating first and second sublayers.Type: GrantFiled: August 15, 2012Date of Patent: December 10, 2013Assignee: Cree, Inc.Inventors: David B. Slater, Jr., Bradley E. Williams, Peter S. Andrews, John A. Edmond, Scott T. Allen
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Publication number: 20120305939Abstract: Semiconductor light emitting devices, such as light emitting diodes, include a substrate, an epitaxial region on the substrate that includes a light emitting region such as a light emitting diode region, and a multilayer conductive stack including a reflector layer, on the epitaxial region. A barrier layer is provided on the reflector layer and extending on a sidewall of the reflector layer. The multilayer conductive stack can also include an ohmic layer between the reflector and the epitaxial region. The barrier layer further extends on a sidewall of the ohmic layer. The barrier layer can also extend onto the epitaxial region outside the multilayer conductive stack. The barrier layer can be fabricated as a series of alternating first and second sublayers.Type: ApplicationFiled: August 15, 2012Publication date: December 6, 2012Inventors: David B. Slater, JR., Bradley E. Williams, Peter S. Andrews, John A. Edmond, Scott T. Allen
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Patent number: 8269241Abstract: Semiconductor light emitting devices, such as light emitting diodes, include a substrate, an epitaxial region on the substrate that includes a light emitting region such as a light emitting diode region, and a multilayer conductive stack including a reflector layer, on the epitaxial region. A barrier layer is provided on the reflector layer and extending on a sidewall of the reflector layer. The multilayer conductive stack can also include an ohmic layer between the reflector and the epitaxial region. The barrier layer further extends on a sidewall of the ohmic layer. The barrier layer can also extend onto the epitaxial region outside the multilayer conductive stack. The barrier layer can be fabricated as a series of alternating first and second sublayers.Type: GrantFiled: September 22, 2009Date of Patent: September 18, 2012Assignee: Cree, Inc.Inventors: David B. Slater, Jr., Bradley E. Williams, Peter S. Andrews, John A. Edmond, Scott T. Allen
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Publication number: 20110031502Abstract: Light emitting diodes include a silicon carbide substrate having first and second opposing faces, a diode region on the first face, anode and cathode contacts on the diode region opposite the silicon carbide substrate and a hybrid reflector on the silicon carbide substrate opposite the diode region. The hybrid reflector includes a transparent layer having an index of refraction that is lower than the silicon carbide substrate, and a reflective layer on the transparent layer, opposite the substrate. A die attach layer may be provided on the hybrid reflector, opposite the silicon carbide substrate. A barrier layer may be provided between the hybrid reflector and the die attach layer.Type: ApplicationFiled: August 10, 2009Publication date: February 10, 2011Inventors: Michael John Bergmann, Kevin Ward Haberern, Bradley E. Williams, Winston T. Parker, Arthur Fong-Yuen Pun, Doowon Suh, Matthew Donofrio
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Publication number: 20100006883Abstract: Semiconductor light emitting devices, such as light emitting diodes, include a substrate, an epitaxial region on the substrate that includes a light emitting region such as a light emitting diode region, and a multilayer conductive stack including a reflector layer, on the epitaxial region. A barrier layer is provided on the reflector layer and extending on a sidewall of the reflector layer. The multilayer conductive stack can also include an ohmic layer between the reflector and the epitaxial region. The barrier layer further extends on a sidewall of the ohmic layer. The barrier layer can also extend onto the epitaxial region outside the multilayer conductive stack. The barrier layer can be fabricated as a series of alternating first and second sublayers.Type: ApplicationFiled: September 22, 2009Publication date: January 14, 2010Inventors: David B. Slater, JR., Bradley E. Williams, Peter S. Andrews, John A. Edmond, Scott T. Allen
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Patent number: 7611915Abstract: Semiconductor light emitting devices, such as light emitting diodes, include a substrate, an epitaxial region on the substrate that includes a light emitting region such as a light emitting diode region, and a multilayer conductive stack including a reflector layer, on the epitaxial region. A barrier layer is provided on the reflector layer and extending on a sidewall of the reflector layer. The multilayer conductive stack can also include an ohmic layer between the reflector and the epitaxial region. The barrier layer further extends on a sidewall of the ohmic layer. The barrier layer can also extend onto the epitaxial region outside the multilayer conductive stack. The barrier layer can be fabricated as a series of alternating first and second sublayers.Type: GrantFiled: March 20, 2007Date of Patent: November 3, 2009Assignee: Cree, Inc.Inventors: David B. Slater, Jr., Bradley E. Williams, Peter S. Andrews, John A. Edmond, Scott T. Allen