Patents by Inventor Bradley E. Williams

Bradley E. Williams has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10957830
    Abstract: Monolithic LED chips are disclosed comprising a plurality of active regions on a submount, wherein the submount comprises integral electrically conductive interconnect elements in electrical contact with the active regions and electrically connecting at least some of the active regions in series. The submount also comprises an integral insulator element electrically insulating at least some of the interconnect elements and active regions from other elements of the submount. The active regions are mounted in close proximity to one another to minimize the visibility of the space during operation. The LED chips can also comprise layers structures and compositions that allow improved reliability under high current operation.
    Type: Grant
    Filed: March 1, 2019
    Date of Patent: March 23, 2021
    Assignee: Cree, Inc.
    Inventors: Bradley E Williams, Kevin W Haberern, Bennett D Langsdorf, Manuel L Breva
  • Publication number: 20200365782
    Abstract: Monolithic LED chips are disclosed comprising a plurality of active regions on a submount, wherein the submount comprises integral electrically conductive interconnect elements in electrical contact with the active regions and electrically connecting at least some of the active regions in series. The submount also comprises an integral insulator element electrically insulating at least some of the interconnect elements and active regions from other elements of the submount. The active regions are mounted in close proximity to one another to minimize the visibility of the space during operation. The LED chips can also comprise layers structures and compositions that allow improved reliability under high current operation.
    Type: Application
    Filed: July 31, 2020
    Publication date: November 19, 2020
    Inventors: Bradley E. Williams, Kevin W. Haberern, Bennett D. Langsdorf, Manuel L. Breva
  • Patent number: 10734558
    Abstract: Monolithic LED chips are disclosed comprising a plurality of active regions on a submount, wherein the submount comprises integral electrically conductive interconnect elements in electrical contact with the active regions and electrically connecting at least some of the active regions in series. The submount also comprises an integral insulator element electrically insulating at least some of the interconnect elements and active regions from other elements of the submount. The active regions are mounted in close proximity to one another to minimize the visibility of the space during operation. The LED chips can also comprise layers structures and compositions that allow improved reliability under high current operation.
    Type: Grant
    Filed: March 1, 2019
    Date of Patent: August 4, 2020
    Assignee: Cree Huizhou Solid State Lighting Company Limited
    Inventors: Bradley E Williams, Kevin W Haberern, Bennett D Langsdorf, Manuel L Breva
  • Publication number: 20190198734
    Abstract: Monolithic LED chips are disclosed comprising a plurality of active regions on a submount, wherein the submount comprises integral electrically conductive interconnect elements in electrical contact with the active regions and electrically connecting at least some of the active regions in series. The submount also comprises an integral insulator element electrically insulating at least some of the interconnect elements and active regions from other elements of the submount. The active regions are mounted in close proximity to one another to minimize the visibility of the space during operation. The LED chips can also comprise layers structures and compositions that allow improved reliability under high current operation.
    Type: Application
    Filed: March 1, 2019
    Publication date: June 27, 2019
    Inventors: BRADLEY E. WILLIAMS, KEVIN W. HABERERN, BENNETT D. LANGSDORF, MANUEL L. BREVA
  • Patent number: 10283681
    Abstract: A phosphor-converted light emitting device includes a light emitting diode (LED) on a substrate, where the LED comprises a stack of epitaxial layers comprising a p-n junction. A wavelength conversion material is in optical communication with the LED. According to one embodiment of the phosphor-converted light emitting device, a selective filter is adjacent to the wavelength conversion material, and the selective filter comprises a plurality of nanoparticles for absorbing light from the LED not down-converted by the wavelength conversion material. According to another embodiment of the phosphor-converted light emitting device, a perpendicular distance between a perimeter of the LED on the substrate and an edge of the substrate is at least about 24 microns. According to another embodiment of the phosphor-converted light emitting device, the LED comprises a mirror layer on one or more sidewalls thereof for reducing light leakage through the sidewalls.
    Type: Grant
    Filed: May 14, 2014
    Date of Patent: May 7, 2019
    Assignee: Cree, Inc.
    Inventors: Brian T. Collins, Matthew Donofrio, Kevin W. Haberern, Bennett Langsdorf, Anoop Mathew, Harry A. Seibel, Iliya Todorov, Bradley E. Williams
  • Patent number: 10243121
    Abstract: Monolithic LED chips are disclosed comprising a plurality of active regions on a submount, wherein the submount comprises integral electrically conductive interconnect elements in electrical contact with the active regions and electrically connecting at least some of the active regions in series. The submount also comprises an integral insulator element electrically insulating at least some of the interconnect elements and active regions from other elements of the submount. The active regions are mounted in close proximity to one another to minimize the visibility of the space during operation. The LED chips can also comprise layers structures and compositions that allow improved reliability under high current operation.
    Type: Grant
    Filed: April 29, 2015
    Date of Patent: March 26, 2019
    Assignee: Cree, Inc.
    Inventors: Bradley E Williams, Kevin W Haberern, Bennett D Langsdorf, Manuel L Breva
  • Patent number: 9437785
    Abstract: Light emitting diodes include a silicon carbide substrate having first and second opposing faces, a diode region on the first face, anode and cathode contacts on the diode region opposite the silicon carbide substrate and a hybrid reflector on the silicon carbide substrate opposite the diode region. The hybrid reflector includes a transparent layer having an index of refraction that is lower than the silicon carbide substrate, and a reflective layer on the transparent layer, opposite the substrate. A die attach layer may be provided on the hybrid reflector, opposite the silicon carbide substrate. A barrier layer may be provided between the hybrid reflector and the die attach layer.
    Type: Grant
    Filed: August 10, 2009
    Date of Patent: September 6, 2016
    Assignee: Cree, Inc.
    Inventors: Michael John Bergmann, Kevin Ward Haberern, Bradley E. Williams, Winston T. Parker, Arthur Fong-Yuen Pun, Doowon Suh, Matthew Donofrio
  • Publication number: 20150249196
    Abstract: Monolithic LED chips are disclosed comprising a plurality of active regions on a submount, wherein the submount comprises integral electrically conductive interconnect elements in electrical contact with the active regions and electrically connecting at least some of the active regions in series. The submount also comprises an integral insulator element electrically insulating at least some of the interconnect elements and active regions from other elements of the submount. The active regions are mounted in close proximity to one another to minimize the visibility of the space during operation. The LED chips can also comprise layers structures and compositions that allow improved reliability under high current operation.
    Type: Application
    Filed: April 29, 2015
    Publication date: September 3, 2015
    Inventors: BRADLEY E. WILLIAMS, Kevin W. Haberern, Bennett D. Langsdorf, Manuel L. Breva
  • Publication number: 20150069430
    Abstract: A phosphor-converted light emitting device includes a light emitting diode (LED) on a substrate, where the LED comprises a stack of epitaxial layers comprising a p-n junction. A wavelength conversion material is in optical communication with the LED. According to one embodiment of the phosphor-converted light emitting device, a selective filter is adjacent to the wavelength conversion material, and the selective filter comprises a plurality of nanoparticles for absorbing light from the LED not down-converted by the wavelength conversion material. According to another embodiment of the phosphor-converted light emitting device, a perpendicular distance between a perimeter of the LED on the substrate and an edge of the substrate is at least about 24 microns. According to another embodiment of the phosphor-converted light emitting device, the LED comprises a mirror layer on one or more sidewalls thereof for reducing light leakage through the sidewalls.
    Type: Application
    Filed: May 14, 2014
    Publication date: March 12, 2015
    Inventors: Brian T. Collins, Matthew Donofrio, Kevin W. Haberern, Bennett Langsdorf, Anoop Mathew, Harry A. Seibel, Iliya Todorov, Bradley E. Williams
  • Patent number: 8907366
    Abstract: Semiconductor light emitting devices, such as light emitting diodes, include a substrate, an epitaxial region on the substrate that includes a light emitting region such as a light emitting diode region, and a multilayer conductive stack including a current spreading layer, on the epitaxial region. A barrier layer is provided on the current spreading layer and extending on a sidewall of the current spreading layer. The multilayer conductive stack can also include an ohmic layer between the reflector and the epitaxial region. The barrier layer further extends on a sidewall of the ohmic layer. The barrier layer can also extend onto the epitaxial region outside the multilayer conductive stack. The barrier layer can be fabricated as a series of alternating first and second sublayers.
    Type: Grant
    Filed: October 30, 2013
    Date of Patent: December 9, 2014
    Assignee: Cree, Inc.
    Inventors: David B. Slater, Jr., Bradley E. Williams, Peter S. Andrews, John A. Edmond, Scott T. Allen
  • Publication number: 20140048822
    Abstract: Semiconductor light emitting devices, such as light emitting diodes, include a substrate, an epitaxial region on the substrate that includes a light emitting region such as a light emitting diode region, and a multilayer conductive stack including a current spreading layer, on the epitaxial region. A barrier layer is provided on the current spreading layer and extending on a sidewall of the current spreading layer. The multilayer conductive stack can also include an ohmic layer between the reflector and the epitaxial region. The barrier layer further extends on a sidewall of the ohmic layer. The barrier layer can also extend onto the epitaxial region outside the multilayer conductive stack. The barrier layer can be fabricated as a series of alternating first and second sublayers.
    Type: Application
    Filed: October 30, 2013
    Publication date: February 20, 2014
    Applicant: Cree, Inc.
    Inventors: David B. Slater, JR., Bradley E. Williams, Peter S. Andrews, John A. Edmond, Scott T. Allen
  • Patent number: 8604502
    Abstract: Semiconductor light emitting devices, such as light emitting diodes, include a substrate, an epitaxial region on the substrate that includes a light emitting region such as a light emitting diode region, and a multilayer conductive stack including a reflector layer, on the epitaxial region. A barrier layer is provided on the reflector layer and extending on a sidewall of the reflector layer. The multilayer conductive stack can also include an ohmic layer between the reflector and the epitaxial region. The barrier layer further extends on a sidewall of the ohmic layer. The barrier layer can also extend onto the epitaxial region outside the multilayer conductive stack. The barrier layer can be fabricated as a series of alternating first and second sublayers.
    Type: Grant
    Filed: August 15, 2012
    Date of Patent: December 10, 2013
    Assignee: Cree, Inc.
    Inventors: David B. Slater, Jr., Bradley E. Williams, Peter S. Andrews, John A. Edmond, Scott T. Allen
  • Publication number: 20120305939
    Abstract: Semiconductor light emitting devices, such as light emitting diodes, include a substrate, an epitaxial region on the substrate that includes a light emitting region such as a light emitting diode region, and a multilayer conductive stack including a reflector layer, on the epitaxial region. A barrier layer is provided on the reflector layer and extending on a sidewall of the reflector layer. The multilayer conductive stack can also include an ohmic layer between the reflector and the epitaxial region. The barrier layer further extends on a sidewall of the ohmic layer. The barrier layer can also extend onto the epitaxial region outside the multilayer conductive stack. The barrier layer can be fabricated as a series of alternating first and second sublayers.
    Type: Application
    Filed: August 15, 2012
    Publication date: December 6, 2012
    Inventors: David B. Slater, JR., Bradley E. Williams, Peter S. Andrews, John A. Edmond, Scott T. Allen
  • Patent number: 8269241
    Abstract: Semiconductor light emitting devices, such as light emitting diodes, include a substrate, an epitaxial region on the substrate that includes a light emitting region such as a light emitting diode region, and a multilayer conductive stack including a reflector layer, on the epitaxial region. A barrier layer is provided on the reflector layer and extending on a sidewall of the reflector layer. The multilayer conductive stack can also include an ohmic layer between the reflector and the epitaxial region. The barrier layer further extends on a sidewall of the ohmic layer. The barrier layer can also extend onto the epitaxial region outside the multilayer conductive stack. The barrier layer can be fabricated as a series of alternating first and second sublayers.
    Type: Grant
    Filed: September 22, 2009
    Date of Patent: September 18, 2012
    Assignee: Cree, Inc.
    Inventors: David B. Slater, Jr., Bradley E. Williams, Peter S. Andrews, John A. Edmond, Scott T. Allen
  • Publication number: 20110031502
    Abstract: Light emitting diodes include a silicon carbide substrate having first and second opposing faces, a diode region on the first face, anode and cathode contacts on the diode region opposite the silicon carbide substrate and a hybrid reflector on the silicon carbide substrate opposite the diode region. The hybrid reflector includes a transparent layer having an index of refraction that is lower than the silicon carbide substrate, and a reflective layer on the transparent layer, opposite the substrate. A die attach layer may be provided on the hybrid reflector, opposite the silicon carbide substrate. A barrier layer may be provided between the hybrid reflector and the die attach layer.
    Type: Application
    Filed: August 10, 2009
    Publication date: February 10, 2011
    Inventors: Michael John Bergmann, Kevin Ward Haberern, Bradley E. Williams, Winston T. Parker, Arthur Fong-Yuen Pun, Doowon Suh, Matthew Donofrio
  • Publication number: 20100006883
    Abstract: Semiconductor light emitting devices, such as light emitting diodes, include a substrate, an epitaxial region on the substrate that includes a light emitting region such as a light emitting diode region, and a multilayer conductive stack including a reflector layer, on the epitaxial region. A barrier layer is provided on the reflector layer and extending on a sidewall of the reflector layer. The multilayer conductive stack can also include an ohmic layer between the reflector and the epitaxial region. The barrier layer further extends on a sidewall of the ohmic layer. The barrier layer can also extend onto the epitaxial region outside the multilayer conductive stack. The barrier layer can be fabricated as a series of alternating first and second sublayers.
    Type: Application
    Filed: September 22, 2009
    Publication date: January 14, 2010
    Inventors: David B. Slater, JR., Bradley E. Williams, Peter S. Andrews, John A. Edmond, Scott T. Allen
  • Patent number: 7611915
    Abstract: Semiconductor light emitting devices, such as light emitting diodes, include a substrate, an epitaxial region on the substrate that includes a light emitting region such as a light emitting diode region, and a multilayer conductive stack including a reflector layer, on the epitaxial region. A barrier layer is provided on the reflector layer and extending on a sidewall of the reflector layer. The multilayer conductive stack can also include an ohmic layer between the reflector and the epitaxial region. The barrier layer further extends on a sidewall of the ohmic layer. The barrier layer can also extend onto the epitaxial region outside the multilayer conductive stack. The barrier layer can be fabricated as a series of alternating first and second sublayers.
    Type: Grant
    Filed: March 20, 2007
    Date of Patent: November 3, 2009
    Assignee: Cree, Inc.
    Inventors: David B. Slater, Jr., Bradley E. Williams, Peter S. Andrews, John A. Edmond, Scott T. Allen
  • Patent number: 7211833
    Abstract: Semiconductor light emitting devices, such as light emitting diodes, include a substrate, an epitaxial region on the substrate that includes a light emitting region such as a light emitting diode region, and a multilayer conductive stack including a reflector layer, on the epitaxial region. A barrier layer is provided on the reflector layer and extending on a sidewall of the reflector layer. The multilayer conductive stack can also include an ohmic layer between the reflector and the epitaxial region. The barrier layer further extends on a sidewall of the ohmic layer. The barrier layer can also extend onto the epitaxial region outside the multilayer conductive stack. The barrier layer can be fabricated as a series of alternating first and second sublayers.
    Type: Grant
    Filed: January 20, 2005
    Date of Patent: May 1, 2007
    Assignee: Cree, Inc.
    Inventors: David B. Slater, Jr., Bradley E. Williams, Peter S. Andrews, John A. Edmond, Scott T. Allen
  • Patent number: 7037742
    Abstract: Light emitting diodes include a substrate, an epitaxial region on the substrate that includes therein a diode region and a multilayer conductive stack on the epitaxial region opposite the substrate. A passivation layer extends at least partially on the multilayer conductive stack opposite the epitaxial region, to define a bonding region on the multilayer conductive stack opposite the epitaxial region. The passivation layer also extends across the multilayer conductive stack, across the epitaxial region and onto the substrate. The multilayer conductive stack can include an ohmic layer on the epitaxial region opposite the substrate, a reflector layer on the ohmic layer opposite the epitaxial region and a tin barrier layer on the reflector layer opposite the ohmic layer. An adhesion layer also may be provided on the tin barrier layer opposite the reflector layer. A bonding layer also may be provided on the adhesion layer opposite the tin barrier layer.
    Type: Grant
    Filed: April 15, 2004
    Date of Patent: May 2, 2006
    Assignee: Cree, Inc.
    Inventors: David B. Slater, Jr., Bradley E. Williams, Peter S. Andrews
  • Patent number: 6740906
    Abstract: Light emitting diodes include a substrate, an epitaxial region on the substrate that includes therein a diode region and a multilayer conductive stack on the epitaxial region opposite the substrate. A passivation layer extends at least partially on the multilayer conductive stack opposite the epitaxial region, to define a bonding region on the multilayer conductive stack opposite the epitaxial region. The passivation layer also extends across the multilayer conductive stack, across the epitaxial region and onto the substrate. The multilayer conductive stack can include an ohmic layer on the epitaxial region opposite the substrate, a reflector layer on the ohmic layer opposite the epitaxial region and a tin barrier layer on the reflector layer opposite the ohmic layer. An adhesion layer also may be provided on the tin barrier layer opposite the reflector layer. A bonding layer also may be provided on the adhesion layer opposite the tin barrier layer.
    Type: Grant
    Filed: July 22, 2002
    Date of Patent: May 25, 2004
    Assignee: Cree, Inc.
    Inventors: David B. Slater, Jr., Bradley E. Williams, Peter S. Andrews