Abstract: Semiconductor light emitting devices, such as light emitting diodes, include a substrate, an epitaxial region on the substrate that includes a light emitting region such as a light emitting diode region, and a multilayer conductive stack including a reflector layer, on the epitaxial region. A barrier layer is provided on the reflector layer and extending on a sidewall of the reflector layer. The multilayer conductive stack can also include an ohmic layer between the reflector and the epitaxial region. The barrier layer further extends on a sidewall of the ohmic layer. The barrier layer can also extend onto the epitaxial region outside the multilayer conductive stack. The barrier layer can be fabricated as a series of alternating first and second sublayers.

Abstract: Light emitting diodes include a substrate, an epitaxial region on the substrate that includes therein a diode region and a multilayer conductive stack on the epitaxial region opposite the substrate. A passivation layer extends at least partially on the multilayer conductive stack opposite the epitaxial region, to define a bonding region on the multilayer conductive stack opposite the epitaxial region. The passivation layer also extends across the multilayer conductive stack, across the epitaxial region and onto the substrate. The multilayer conductive stack can include an ohmic layer on the epitaxial region opposite the substrate, a reflector layer on the ohmic layer opposite the epitaxial region and a tin barrier layer on the reflector layer opposite the ohmic layer. An adhesion layer also may be provided on the tin barrier layer opposite the reflector layer. A bonding layer also may be provided on the adhesion layer opposite the tin barrier layer.

Abstract: Light emitting diodes include a substrate, an epitaxial region on the substrate that includes therein a diode region and a multilayer conductive stack on the epitaxial region opposite the substrate. A passivation layer extends at least partially on the multilayer conductive stack opposite the epitaxial region, to define a bonding region on the multilayer conductive stack opposite the epitaxial region. The passivation layer also extends across the multilayer conductive stack, across the epitaxial region and onto the substrate. The multilayer conductive stack can include an ohmic layer on the epitaxial region opposite the substrate, a reflector layer on the ohmic layer opposite the epitaxial region and a tin barrier layer on the reflector layer opposite the ohmic layer. An adhesion layer also may be provided on the tin barrier layer opposite the reflector layer. A bonding layer also may be provided on the adhesion layer opposite the tin barrier layer.

Abstract: Light emitting diodes include a substrate, an epitaxial region on the substrate that includes therein a diode region and a multilayer conductive stack on the epitaxial region opposite the substrate. A passivation layer extends at least partially on the multilayer conductive stack opposite the epitaxial region, to define a bonding region on the multilayer conductive stack opposite the epitaxial region. The passivation layer also extends across the multilayer conductive stack, across the epitaxial region and onto the substrate. The multilayer conductive stack can include an ohmic layer on the epitaxial region opposite the substrate, a reflector layer on the ohmic layer opposite the epitaxial region and a tin barrier layer on the reflector layer opposite the ohmic layer. An adhesion layer also may be provided on the tin barrier layer opposite the reflector layer. A bonding layer also may be provided on the adhesion layer opposite the tin barrier layer.

Abstract: A method for treating as as-grown chemical vapor deposited (CVD) starting diamond film having stresses and containing voids, comprises the step of subjecting the diamond film to a temperature of above about 1000.degree. C. and a hydrostatic pressure of above about 3 kilobars.

Abstract: A multi-surfaced diamond tool having at least two surfaces thereof consisting essentially of fine grained diamonds preferably having an average particle size of about 0.01 .mu.m to about 20 .mu.m and a process for preparing the fine grained diamond surfaces by the vapor deposition method. Also included is a diamond tool insert comprising the above diamond tool bonded to a substrate.

Abstract: A composite diamond wire die for drawing wire has a single crystal or HTHP diamond substrate and a CVD layer or layers deposited thereon. A wire die bore extends through the substrate and between the CVD layers, with a wire bearing surface being located completely within the substrate. The CVD layers may be deposited so as to develop tensile stress therein, so as to place the substrate in compression.

Abstract: A composite diamond wire die for drawing wire has a single crystal or HTHP diamond substrate and a CVD layer or layers deposited thereon. The wire die bore extends through the diamond substrate, and the substrate is surrounded by the diamond CVD layer.

Abstract: A composite diamond wire die for drawing wire has a single crystal or HTHP diamond substrate and a CVD layer or layers deposited thereon. The wire die bore extends through both the substrate and the CVD layers, with the wire bearing surface being located within the substrate.

Abstract: An annular body, which may be a die for drawing wire, comprises an annular transparent CVD diamond body having an opening of uniform diameter with an interior surface in a region of smaller diamond grains and an external surface in a region of larger diamond grains.

Abstract: A die for drawing wire of a predetermined diameter comprising an optically non-opaque CVD diamond body having a thermal conductivity greater than 4 watts/cm-K with an opening extending through said body and having a wire bearing portion of substantially circular cross-section determinative of the diameter of the wire.

Abstract: A stress relieved CVD diamond is produced by annealing said CVD diamond at a temperature above about 1100 to about 2200 degrees Centigrade in a non-oxidizing atmosphere at a low pressure or vacuum and for a suitable short period of time which decreases with increasing annealing temperature so as to prevent graphitization of said diamond.

Abstract: A method and apparatus for enhancing the nucleation of diamond by pretreating a substrate by electrically biasing a diamond film adjacent the substrate while exposing the substrate and the thus biased diamond film to a carbon-containing plasma. The bias pretreatment may be maintained for a time period in the range of about 1 hour to 2 hours to achieve a high diamond nucleation density. Alternatively, the biasing may be continued until diamond film formation is indicated by a change in reflectivity of the surface of the substrate. The biasing pretreating may be used to nucleate diamond heteroepitaxially on a substrate having a surface film formed of a material having a relatively close lattice match to diamond, such as .beta.-silicon carbide. The apparatus includes a laser reflection interferometer to monitor the surface of the substrate.

Abstract: A CVD diamond die for drawing wire has top and bottom surfaces and opposing portions of a peripheral side located in respective regions of larger diamond smaller diamond grains. An opening which extends through the body from the top surface to the bottom surface is suitable positioned intermediate the side portions.

Abstract: A CVD diamond wire drawing die has smaller diamond grains adjacent an initial diamond growth surface with larger diamond grains adjacent an opposing surface with an opening having a wire bearing portion of substantially circular cross-section determinative of the diameter of the wire positioned more closely adjacent to the initial growth surface in a region of smaller grains than to final large grained opposing surface.

Abstract: Adherent traces of a carbide-forming conductive metal are produced on a diamond surface, without deposition of carbide in areas to be non-conductive, by depositing an undercoat layer of a non-carbide-forming metal such as palladium, patterning said undercoat layer and then depositing a bond layer of the carbide-forming metal. The undercoat layer and the portion of the bond layer deposited thereon are then removed, typically by etching.