Abstract: An integrated circuit (IC) package incorporating controlled induced warping is disclosed. The IC package includes an electronic substrate having an active side upon which semiconducting dies and functional circuits have been lithographed or otherwise fabricated, leading to an inherent warping in the direction of the active side. One or more corrective layers may be deposited to the opposing, or inactive, side of the semiconducting die via electroplating in order to induce corrective warping of the electronic substrate back toward the horizontal (e.g., in the direction of the inactive side) to a desired degree.

Abstract: A system-in-package (SIP) incorporating die-in-die cavity packaging may include hybrid dies fabricated by milling or otherwise creating a cavity through the additive surfaces of a primary application specific integrated circuit (ASIC) die configured for flip-chip bonding and encapsulating a secondary die such as a Flash/non-volatile memory module, analog-digital converter (ADC), or other processing circuit into the cavity. The primary and secondary dies are then connected by the addition of redistribution layers. The resulting hybrid die may then be vertically integrated into the SIP along with additional memory modules or dies.

Abstract: Systems and apparatuses include a radio frequency feed configured to connect to a feedline, and a plurality of radiating elements coupled with the radio frequency feed. Each radiating element is arranged at an oblique angle relative to an antenna axis and configured to radiate at a wavelength (?). The plurality of radiating elements define a phase center distance between about 0.15? and about 0.2?.

Abstract: An electromagnetic interference (EMI) shielded device and a method for making an EMI shield device are disclosed. The EMI shielded device may include an electrical circuit and an encapsulation layer disposed on a portion of the electrical circuit. The encapsulant layer having a plurality of particles dispersed therein, wherein the plurality of particles are suitable for shielding electrical circuitry from EMI. The method for making an EMI shielded device may include providing an electrical circuit, and depositing an encapsulant material upon a portion of the electrical circuit, wherein a plurality of EMI shielding particles are dispersed within the encapsulant material. An additional method may include depositing a dielectric material upon a portion of the electrical circuit and depositing an encapsulant material upon a portion of the dielectric material and the portion of the electrical circuit, wherein a plurality of EMI shielding particles are dispersed within the encapsulant material.

Abstract: A fault indication method for equipment includes receiving a fault signal indicative of a fault of a device; energizing a light emitter based on the received fault indication, in which a luminous material is made to fluoresce based on receipt of light emitted by the light emitter; detecting fluorescence of the luminous material by a light detector, and outputting a voltage and/or current indicative of the fluorescence; and providing a fault output signal when the voltage and/or current exceeds a predetermined value.

Abstract: A method for shielding an electrical circuit may include depositing a potting material upon the electrical circuit. The method may include providing a path to a ground of the electrical circuit. The method may also include depositing an electrically conductive coating upon the electrical circuit and over the potting material. The method may further include connecting the electrically conductive coating to the ground of the electrical circuit.

Abstract: A method for forming an embedded passive device module comprises depositing a first amount of an alkali silicate material, co-depositing an amount of embedded passive device material with the amount of alkali silicate material; and thermally processing the amount of alkali silicate material and the amount of embedded passive device material at a temperature sufficient to cure the amount of alkali silicate material and the amount of embedded passive device material and form a substantially moisture free substrate.

Abstract: An integrated circuit assembly (ex.—a flip chip package, a wire bond chip package) is provided which includes a substrate (ex.—a printed circuit board) and a die assembly. The die assembly includes an integrated circuit chip which is connected to the printed circuit board. Further, an external dielectric layer (ex.—a solder mask layer) of the printed circuit board is at least substantially coated with a conductive coating (ex.—a low sintering temperature, nano-particle silver coating). The conductive coating is not in contact with the die assembly and/or passive electronics which are connected to the printed circuit board, however the conductive coating is electrically connected to the printed circuit board. The conductive coating provides (ex—acts as) an external ground plane for the printed circuit board.

Abstract: A method for forming an embedded passive device module comprises depositing a first amount of an alkali silicate material, co-depositing an amount of embedded passive device material with the amount of alkali silicate material; and thermally processing the amount of alkali silicate material and the amount of embedded passive device material at a temperature sufficient to cure the amount of alkali silicate material and the amount of embedded passive device material and form a substantially moisture free substrate.

Abstract: A method for forming an embedded passive device module comprises depositing a first amount of an alkali silicate material, co-depositing an amount of embedded passive device material with the amount of alkali silicate material; and thermally processing the amount of alkali silicate material and the amount of embedded passive device material at a temperature sufficient to cure the amount of alkali silicate material and the amount of embedded passive device material and form a substantially moisture free substrate.

Abstract: A method for forming an embedded passive device module comprises depositing a first amount of an alkali silicate material, co-depositing an amount of embedded passive device material with the amount of alkali silicate material; and thermally processing the amount of alkali silicate material and the amount of embedded passive device material at a temperature sufficient to cure the amount of alkali silicate material and the amount of embedded passive device material and form a substantially moisture free substrate.