Abstract: A method for Transmission Electron Microscopy (TEM) sample creation. The use of a Scanning Electron Microscope (SEM)—Scanning Transmission Electron Microscope (STEM) detector in the dual-beam focused ion beam (FIB)/SEM allows a sample to be thinned using the FIB, while the STEM signal is used to monitor sample thickness. A preferred embodiment of the present invention can measure the thickness of or create TEM and STEM samples by using a precise endpoint detection method. Preferred embodiments also enable automatic endpointing during TEM lamella creation and provide users with direct feedback on sample thickness during manual thinning. Preferred embodiments of the present invention thus provide methods for endpointing sample thinning and methods to partially or fully automate endpointing.

Abstract: An optical metrology device determines physical characteristics of at least one via in a sample, such as a through-silicon vias (TSV), using signal strength data for modeling of the bottom critical dimension (BCD) and/or for refinement of the data used to determine a physical characteristic of the via, such as BCD and/or depth. The metrology device obtains interferometric data and generates height and signal strength data, from which statistical properties may be obtained. The height and signal strength data for the via is refined by removing noise using the statistical property, and the BCD for the via may be determined using the refined height and signal strength data. In one implementation, a signal strength via map for a via is generated using signal strength data and is fit to a model to determine the BCD for the via.

Abstract: A method for TEM sample preparation and analysis that can be used in a FIB-SEM system without re-welds, unloads, user handling of the lamella, or a motorized flip stage. The method allows a dual beam FIB-SEM system with a typical tilt stage to be used to extract a sample to from a substrate, mount the sample onto a TEM sample holder capable of tilting, thin the sample using FIB milling, and rotate the sample so that the sample face is perpendicular to an electron column for STEM imaging.

Abstract: A method for Transmission Electron Microscopy (TEM) sample creation. The use of a Scanning Electron Microscope (SEM)—Scanning Transmission Electron Microscope (STEM) detector in the dual-beam focused ion beam (FIB)/SEM allows a sample to be thinned using the FIB, while the STEM signal is used to monitor sample thickness. A preferred embodiment of the present invention can measure the thickness of or create TEM and STEM samples by using a precise endpoint detection method. Preferred embodiments also enable automatic endpointing during TEM lamella creation and provide users with direct feedback on sample thickness during manual thinning. Preferred embodiments of the present invention thus provide methods for endpointing sample thinning and methods to partially or fully automate endpointing.

Abstract: A method for Transmission Electron Microscopy (TEM) sample creation. The use of a Scanning Electron Microscope (SEM)—Scanning Transmission Electron Microscope (STEM) detector in the dual-beam focused ion beam (FIB)/SEM allows a sample to be thinned using the FIB, while the STEM signal is used to monitor sample thickness. A preferred embodiment of the present invention can measure the thickness of or create TEM samples by using a precise endpoint detection method. Preferred embodiments also enable automatic endpointing during TEM lamella creation and provide users with direct feedback on sample thickness during manual thinning. Preferred embodiments of the present invention thus provide methods for endpointing sample thinning and methods to partially or fully automate endpointing.

Abstract: Embodiments of barriers to use in semiconductor devices are presented herein.

Abstract: An improved method for TEM sample creation. The use of a SEM-STEM detector in the dual-beam FIB/SEM allows a sample to be thinned using the FIB, while the STEM signal is used to monitor sample thickness. A preferred embodiment of the present invention can measure the thickness of or create S/TEM samples by using a precise endpoint detection method that is reproducible and suitable for automation. Preferred embodiments also enable automatic endpointing during TEM lamella creation and provide users with direct feedback on sample thickness during manual thinning. Preferred embodiments of the present invention thus provide improved methods for endpointing sample thinning and methods to partially or fully automate endpointing to increase throughput and reproducibility of TEM sample creation.

Abstract: A barrier architecture is provided that includes different materials that are selected to be employed in connection with copper contact applications. Some of the barrier material is formed over trench contact sidewalls, and other different barrier material is formed over trench contact bottoms. By selecting the appropriate barrier materials, electromigration can be improved while, at the same time, interconnect and contact resistances can be kept low and array leakage can be mitigated.

Abstract: A barrier architecture is provided that includes different materials that are selected to be employed in connection with copper contact applications. Some of the barrier material is formed over trench contact sidewalls, and other different barrier material is formed over trench contact bottoms. By selecting the appropriate barrier materials, electromigration can be improved while, at the same time, interconnect and contact resistances can be kept low and array leakage can be mitigated.

Abstract: Embodiments of barriers to use in semiconductor devices are presented herein.

Abstract: A barrier architecture is provided that includes different materials that are selected to be employed in connection with copper contact applications. Some of the barrier material is formed over trench contact sidewalls, and other different barrier material is formed over trench contact bottoms. By selecting the appropriate barrier materials, electromigration can be improved while, at the same time, interconnect and contact resistances can be kept low and array leakage can be mitigated.

Abstract: Apparatus and methods of fabricating an atomic layer deposited tantalum containing adhesion layer within at least one dielectric material in the formation of a metal, wherein the atomic layer deposition tantalum containing adhesion layer is sufficiently thin to minimize contact resistance and maximize the total cross-sectional area of metal, including but not limited to tungsten, within the contact.