Abstract: Embodiments herein describe techniques for a semiconductor device over a semiconductor substrate. A first bonding layer is above the semiconductor substrate. One or more nanowires are formed above the first bonding layer to be a channel layer. A gate electrode is around a nanowire, where the gate electrode is in contact with the first bonding layer and separated from the nanowire by a gate dielectric layer. A source electrode or a drain electrode is in contact with the nanowire, above a bonding area of a second bonding layer, and separated from the gate electrode by a spacer, where the second bonding layer is above and in direct contact with the first bonding layer. Other embodiments may be described and/or claimed.

Abstract: The present invention describes the synthesis of silicon-containing monomers and copolymers. The synthesis of a monomer, trimethyl-(2-methylenebut-3-enyl)silane (TMSI) and subsequent synthesis of diblock copolymer with styrene, forming polystyrene-block-polytrimethylsilyl isoprene, and synthesis of diblock copolymer Polystyrene-block-polymethacryloxymethyltrimethylsilane or PS-b-P(MTMSMA). These silicon containing diblock copolymers have a variety of uses. One preferred application is as novel imprint template material with sub-100 nm features for lithography.