Abstract: A device includes one or more reflector components. Each reflector component comprises layer pairs of epitaxially grown reflective layers and layers of a non-epitaxial material, such as air. Vias extend through at least some of the layers of the reflector components. The device may include a light emitting layer.

Abstract: Disclosed is an integrated circuit arrangement including a two sided circuit board, having a first surface and a second surface. A plurality of electrical conductors is incorporated as part of the two sided circuit board. An array of through holes extend through the first surface and the second surface, arranged in a pattern and are configured to provide a common electrical connection area, wherein the common electrical connection area is associated with a portion of a particular one of the plurality of electrical conductors.

Abstract: Provided is a manufacturing process for electronic circuit components such as bare dies, and packaged integrated chips, among other configurations, to form electronic assemblies. The surface of the electronic circuit component carries electronic elements such as conductive traces and/or other configurations including contact pads. A method for forming an electronic assembly includes providing a tacky layer. Then an electronic circuit component is provided having a first side and a second side, where the first side carries the electronic elements. The first side of the electronic circuit component is positioned into contact with the tacky layer. A bonding material is then deposited to a portion of the adhesive layer that is not covered by the first side of the electronic circuit component, to a depth which is sufficient to cover at least a portion of the electronic circuit component. The bonding material is then fixed or cured into a fixed or cured bonding material, and the tacky layer is removed.

Abstract: An article includes a support substrate bonded to heterostructure epitaxial layers that include one or more electronic devices. The support substrate has a bonding surface and the heterostructure epitaxial layers have a surface with the epitaxial growth direction of the heterostructure epitaxial layers towards the surface. The surface of the heterostructure epitaxial layers is bonded at the bonding surface of the support substrate by ion exchange between the surface of the heterostructure epitaxial layers and the bonding surface of the support substrate.

Abstract: Provided is a manufacturing process for electronic circuit components such as bare dies, and packaged integrated chips, among others, where the surface of the electronic circuit component is at the same level as the associated substrate, the surface of the electronic circuit component holding connection pads. A gap exists between the electronic circuit component, and the end of an opening within the substrate. This gap is filled with a filler material, such as a bonding material. The bonding material also used to encapsulate or bond together the back side of the substrate and electronic circuit component. During the manufacturing process, the front surface of the electronic circuit component (which includes the contact pads) and the front surface of the substrate which includes electronic circuitry are held in an adhesive relationship by a flat material having an upper surface which includes adhesive or sticky material (such as PDMS).

Abstract: An article includes a support substrate bonded to heterostructure epitaxial layers that include one or more electronic devices. The support substrate has a bonding surface and the heterostructure epitaxial layers have a surface with the epitaxial growth direction of the heterostructure epitaxial layers towards the surface. The surface of the heterostructure epitaxial layers is bonded at the bonding surface of the support substrate by ion exchange between the surface of the heterostructure epitaxial layers and the bonding surface of the support substrate.

Abstract: A process including selecting a printing system; selecting an ink composition having ink properties that match the printing system; depositing the ink composition onto a substrate to form an image, to form deposited features, or a combination thereof; optionally, heating the deposited features to form conductive features on the substrate; and performing a post-printing treatment after depositing the ink composition.

Abstract: A device includes one or more reflector components. Each reflector component comprises layer pairs of epitaxially grown reflective layers and layers of a non-epitaxial material, such as air. Vias extend through at least some of the layers of the reflector components. The device may include a light emitting layer.

Abstract: A process including selecting a printing system; selecting an ink composition having ink properties that match the printing system; depositing the ink composition onto a substrate to form an image, to form deposited features, or a combination thereof; optionally, heating the deposited features to form conductive features on the substrate; and performing a post-printing treatment after depositing the ink composition.

Abstract: A device includes one or more reflector components. Each reflector component comprises layer pairs of epitaxially grown reflective layers and layers of a non-epitaxial material, such as air. Vias extend through at least some of the layers of the reflector components. The device may include a light emitting layer.

Abstract: One or more layers are epitaxially grown on a bulk crystalline AlN substrate. The epitaxial layers include a surface which is the initial surface of epitaxial growth of the epitaxial layers. The AlN substrate is substantially removed over a majority of the initial surface of epitaxial growth.

Abstract: Approaches for substantially removing bulk aluminum nitride (AlN) from one or more layers epitaxially grown on the bulk AlN are discussed. The bulk AlN is exposed to an etchant during an etching process. During the etching process, the thickness of the bulk AlN can be measured and used to control etching.

Abstract: A method of forming a three-dimensional electronic device includes forming at least one electronic device on a two-dimensional, flexible substrate, the electronic device being formed according to a three-dimensional structure, cutting the two-dimensional, flexible substrate, the cuts being located to allow the two-dimensional substrate to be shaped, the cuts having at least one stress relief feature, and shaping the two-dimensional, flexible substrate to form the three-dimensional structure, the stress relief features arranged to alleviate stress in the three-dimensional structure.

Abstract: A method of forming a three-dimensional electronic device includes forming at least one electronic device on a two-dimensional, flexible substrate, the electronic device being formed according to a three-dimensional structure, cutting the two-dimensional, flexible substrate, the cuts being located to allow the two-dimensional substrate to be shaped, the cuts having at least one stress relief feature, and shaping the two-dimensional, flexible substrate to form the three-dimensional structure, the stress relief features arranged to alleviate stress in the three-dimensional structure.

Abstract: A method of forming a three-dimensional electronic device includes forming at least one electronic device on a two-dimensional, flexible substrate, the electronic device being formed according to a three-dimensional structure, cutting the two-dimensional, flexible substrate, the cuts being located to allow the two-dimensional substrate to be shaped, the cuts having at least one stress relief feature, and shaping the two-dimensional, flexible substrate to form the three-dimensional structure, the stress relief features arranged to alleviate stress in the three-dimensional structure.

Abstract: A device includes one or more reflector components. Each reflector component comprises layer pairs of epitaxially grown reflective layers and layers of a non-epitaxial material, such as air. Vias extend through at least some of the layers of the reflector components. The device may include a light emitting layer.

Abstract: One or more layers are epitaxially grown on a bulk crystalline AlN substrate. The epitaxial layers include a surface which is the initial surface of epitaxial growth of the epitaxial layers. The AlN substrate is substantially removed over a majority of the initial surface of epitaxial growth.

Abstract: Approaches for substantially removing bulk aluminum nitride (AlN) from one or more layers epitaxially grown on the bulk AlN are discussed. The bulk AlN is exposed to an etchant during an etching process. During the etching process, the thickness of the bulk AlN can be measured and used to control etching.

Abstract: An electrophoretic display device includes a multiplicity of individual reservoirs containing a display medium between conductive substrates, at least one of which is transparent, wherein the display medium includes one or more set of colored particles in a dielectric fluid, and wherein the multiplicity of individual reservoirs are defined by a unitary grid whose walls segregate the reservoirs. The gird may be formed via photolithography or from a master stamp derived from a mold of the grid pattern.

Abstract: A method of forming a three-dimensional electronic device includes forming at least one electronic device on a two-dimensional, flexible substrate, the electronic device being formed according to a three-dimensional structure, cutting the two-dimensional, flexible substrate, the cuts being located to allow the two-dimensional substrate to be shaped, the cuts having at least one stress relief feature, and shaping the two-dimensional, flexible substrate to form the three-dimensional structure, the stress relief features arranged to alleviate stress in the three-dimensional structure.