Abstract: The present invention relates to the use of extra particulate additives in selected chemically processed toner compositions for use in an image forming apparatus. The extra particulate additive may have a controlled aspect ratio and be combined with the chemically processed toner. The chemically processed toner may provide toner particles having controlled diameters and rheological properties that may be combined with a release agent. The release agent may also be selected with respect to, e.g., concentration and/or mean domain size within the toner particles including considerations of coating chemistry and/or DSC melting behavior.

Abstract: A chip-shaped laser medium (12) is side pumped to improve mode matching between the pumping energy (50) and lasing mode volume (36). The chip thickness (44) and laser medium doping level can be designed and controlled to ensure adequate pumping coupling efficiency. The chip shape can also be employed to provide greater chip surface areas (22) for cooling the laser medium (12). The laser pumping package (70), gain module (101), and chip-shaped design can be scalable to offer higher pumping power and high output power. Different orientations of the gain modules (101) with respect to each other can be used to provide better lasing mode quality.

Abstract: The invention includes a method system and apparatus for an asynchronous event notification. In the event that a system-wide application requires notification of an asynchronous event that occurs in a remote device within the communications system, the event is locally detected and the necessary information is forwarded to the application.

Abstract: A method, system and apparatus for decoupling devices in a network for use by a system-wide application. The invention includes accumulating configuration information for the network, wherein the network includes a plurality of units, and each of the units includes a processor and at least one switch device. The invention further includes analyzing the configuration information and determining a logical configuration for the network based on the analyzed configuration information. The invention further includes virtually attaching a remote switch device to the network.

Abstract: A method, system and apparatus for constructing dispatch tables match application program interface service routines. The invention includes reading a header file of the application program interface. The invention further includes generating a corresponding dispatch table for at least one device indicated in the header file, wherein the corresponding dispatch tables are generated based on information read from the header file. The invention further includes verifying that the information contained in the dispatch tables is consistent with current requirements of the application program interface.

Abstract: Digital control of frequency and/or amplitude modulation techniques of an intracavity and/or extracavity AOM (60) facilitate substantially full extinction of a laser beam (90) to prevent unwanted laser energy from impinging a workpiece (80); facilitate laser pulse amplitude stability through closed-loop control of pulse-to-pulse laser energy; facilitate beam-positioning control including, but not limited to, closed-loop control for applications such as alignment error correction, beam walk rectification, or tertiary positioning; and facilitate employment of more than one transducer on an AOM (60) to perform any of the above-listed applications.

Abstract: The invention provides a method and system for communication between processors. Rather than provide an external network connection solely for providing a communication link between CPUs, the present invention utilizes the network devices to transfer information between CPUs. A transmitting network device marks a control packet, which is intended as a communication between CPUs, as control traffic. The receiving network device will determine whether the received control packet is intended for its own CPU and provide the control packet to its CPU if that is the case.

Abstract: A method and system for automatically trunking ports connecting network devices arranged in a stacked configuration is provided. The method includes sending a packet, from a sending network device to at least one other receiving network device, through each of a plurality of ports of the network device. The packet includes at least an identifier for identifying the sending network device. The receiving network device maintains a table identifying which ports are connected to a neighboring network device.

Abstract: A method and system for discovering interconnections between a plurality of network devices arranged in a stacked configuration is provided. A probe packet, including a tag indicating a transmit port from which the probe packet was transmitted and a receive port at which the probe packet was received, is sent from one network device to a next network device. A routing packet is sent from each of the network devices, including information regarding the configuration of the stack of network devices. A master network device is elected. The master network device sends a topology packet, which includes final configuration information, to the other network devices.

Abstract: A workpiece processing system employs a common modular imaged optics assembly and an optional variable beam expander for optically processing multiple laser beams. In one embodiment, a laser and a fixed beam expander cooperate to produce a laser beam that propagates through a beam switching device to produce multiple laser beams that propagate along separate propagation path portions and subsequently merge into a common path portion through an imaged optics assembly and optional variable expander. The beam expander sets the shape of the laser beams in the form of a Gaussian spatial distribution of light energy. The imaged optics assembly shapes the Gaussian spatial distribution of the laser beams to form output beams of uniform spatial distribution. In an alternative embodiment, the beam switching device is removed and the laser beams propagate from separate laser sources associated with separate optional beam expanders.

Abstract: Patterns with feature sizes of less than 50 microns are rapidly formed directly in semiconductors, particularly silicon, GaAs, indium phosphide, or single crystalline sapphire, using ultraviolet laser ablation. These patterns include very high aspect ratio cylindrical through-hole openings for integrated circuit connections; singulation of processed die contained on semiconductor wafers; and microtab cutting to separate microcircuit workpieces from a parent semiconductor wafer. Laser output pulses (32) from a diode-pumped, Q-switched frequency-tripled Nd:YAG, Nd:YVO4, or Nd:YLF is directed to the workpiece (12) with high speed precision using a compound beam positioner. The optical system produces a Gaussian spot size, or top hat beam profile, of about 10 microns. The pulse energy used for high-speed ablative processing of semiconductors using this focused spot size is greater than 200 ?J per pulse at pulse repetition frequencies greater than 5 kHz and preferably above 15 kHz.

Abstract: Digital control of frequency and/or amplitude modulation techniques of an intracavity and/or extracavity AOM (60) facilitate substantially full extinction of a laser beam (90) to prevent unwanted laser energy from impinging a workpiece (80); facilitate laser pulse amplitude stability through closed-loop control of pulse-to-pulse laser energy; facilitate beam-positioning control including, but not limited to, closed-loop control for applications such as alignment error correction, beam walk rectification, or tertiary positioning; and facilitate employment of more than one transducer on an AOM (60) to perform any of the above-listed applications.

Abstract: A method of adjusting fields of a datagram in the handling of the datagram in a network device is disclosed. The method includes receiving a datagram, with the datagram having at least module identifier fields and port identifier fields, at a port of a network device, determining whether the received datagram is a unicast datagram, adjusting the module and port identifier fields of the datagram based on data registers in the network device when the received datagram is a unicast datagram and forwarding the datagram based on the module and port identifier fields of the datagram. The port of the network device is connected to a legacy device, where the legacy device has a reduced handling capacity when compared to the network device.

Abstract: Methods and systems selectively irradiate structures on or within a semiconductor substrate using a plurality of laser beams. The structures are arranged in a row extending in a generally lengthwise direction. The method generates a first laser beam that propagates along a first laser beam axis that intersects the semiconductor substrate and a second laser beam that propagates along a second laser beam axis that intersects the semiconductor substrate. The method simultaneously directs the first and second laser beams onto distinct first and second structures in the row. The method moves the first and second laser beam axes relative to the semiconductor substrate substantially in unison in a direction substantially parallel to the lengthwise direction of the row, so as to selectively irradiate structures in the row with one or more of the first and second laser beams simultaneously.

Abstract: Methods and systems selectively irradiate structures on or within a semiconductor substrate using a plurality of pulsed laser beams. The structures are arranged in a row extending in a generally lengthwise direction. The method generates a first pulsed laser beam that propagates along a first laser beam axis that intersects the semiconductor substrate and a second pulsed laser beam that propagates along a second laser beam axis that intersects the semiconductor substrate. The method directs respective first and second pulses from the first and second pulsed laser beams onto distinct first and second structures in the row so as to complete irradiation of said structures with a single laser pulse per structure. The method moves the first and second laser beam axes relative to the semiconductor substrate substantially in unison in a direction substantially parallel to the lengthwise direction of the row, so as to selectively irradiate structures in the row with either the first or the second laser beam.

Abstract: Methods and systems process a semiconductor substrate having a plurality of structures to be selectively irradiated with multiple laser beams. The structures are arranged in a plurality of substantially parallel rows extending in a generally lengthwise direction. The method generates a first laser beam that propagates along a first laser beam axis that intersects a first target location on or within the semiconductor substrate. The method also generates a second laser beam that propagates along a second laser beam axis that intersects a second target location on or within the semiconductor substrate. The second target location is offset from the first target location in a direction perpendicular to the lengthwise direction of the rows by some amount such that, when the first target location is a structure on a first row of structures, the second target location is a structure or between two adjacent structures on a second row distinct from the first row.

Abstract: Methods and systems use laser pulses to process a selected structure on or within a semiconductor substrate. The structure has a surface, a width, and a length. The laser pulses propagate along axes that move along a scan beam path relative to the substrate as the laser pulses process the selected structure. The method simultaneously generates on the selected structure first and second laser beam pulses that propagate along respective first and second laser beam axes intersecting the selected structure at distinct first and second locations. The first and second laser beam pulses impinge on the surface of the selected structure respective first and second beam spots. Each beam spot encompasses at least the width of the selected link. The first and second beam spots are spatially offset from one another along the length of the selected structure to define an overlapping region covered by both the first and the second beam spots and a total region covered by one or both of the first and second beam spots.

Abstract: Methods and systems selectively irradiate structures on or within a semiconductor substrate using a plurality of laser beams. The structures are arranged in a row extending in a generally lengthwise direction. The method generates a first laser beam that propagates along a first laser beam axis that intersects the semiconductor substrate and a second laser beam that propagates along a second laser beam axis that intersects the semiconductor substrate. The method directs the first and second laser beams onto distinct first and second structures in the row. The second spot is offset from the first spot by some amount in a direction perpendicular to the lengthwise direction of the row. The method moves the first and second laser beam axes relative to the semiconductor substrate along the row substantially in unison in a direction substantially parallel to the lengthwise direction of the row.

Abstract: Methods and systems selectively irradiate structures on or within a semiconductor substrate using a plurality of laser beams. The structures are arranged in a row extending in a generally lengthwise direction. The method generates a first laser beam that propagates along a first laser beam axis that intersects the semiconductor substrate and a second laser beam that propagates along a second laser beam axis that intersects the semiconductor substrate. The method directs the first and second laser beams onto non-adjacent first and second structures in the row. The method moves the first and second laser beam axes relative to the semiconductor substrate along the row substantially in unison in a direction substantially parallel to the lengthwise direction of the row.

Abstract: Methods and systems selectively irradiate electrically conductive structures on or within a semiconductor substrate using multiple laser beams. The structures are arranged in a plurality of substantially parallel rows extending in a generally lengthwise direction. One method propagates a first laser beam along a first propagation path having a first axis incident at a first location on or within the semiconductor substrate at a given time. The first location is either on a structure in a first row of structures or between two adjacent structures in the first row. The method also propagates a second laser beam along a second propagation path having a second axis incident at a second location on or within the semiconductor substrate at the given time. The second location is either on a structure in a second row of structures or between two adjacent structures in the second row.