Abstract: A laser beam switching system employs a laser coupled to a beam switching device that causes a laser beam to switch between first and second beam positioning heads such that while the first beam positioning head is directing the laser beam to process a workpiece target location, the second beam positioning head is moving to another target location and vice versa. A preferred beam switching device includes first and second AOMs positioned such that the laser beam passes through the AOMs without being deflected. When RF is applied to the first AOM, the laser beam is diffracted toward the first beam positioning head, and when RF is applied to the second AOM, the laser beam is diffracted toward the second beam positioning head.

Abstract: A laser pulse with a specially tailored temporal power profile, instead of a conventional temporal shape or substantially square shape, severs an IC link. The specially tailored laser pulse preferably has either an overshoot at the beginning of the laser pulse or a spike peak within the duration of the laser pulse. The timing of the spike peak is preferably set ahead of the time when the link is mostly removed. A specially tailored laser pulse power profile allows the use of a wider laser pulse energy range and shorter laser wavelengths, such as the green and UV, to sever the links without appreciable damage to the substrate and passivation structure material located on either side of and underlying the links.

Abstract: A laser system uses a broad-area high-power diode laser in cooperation with a nonimaging concentrator, or an unstable resonator semiconductor laser, to end pump a relatively thin, solid-state, highly doped lasant. The laser system generates a very high density of excited ions in the lasant mode volume to produce high peak power pulses having comparable magnitudes over a wide range of pulse repetition frequencies.

Abstract: A high-power unstable resonator semiconductor laser (14) emits optical output of greater than 50 mW in a wavelength range of 700-1100 nm. A grating (116,136) may be positioned external to URSL (14) to control the spectral bandwidth and wavelength output of the waveguide pumping beam (74). Alternatively, URSL (14) may be fabricated with a distributed feedback (DFB) grating or a distributed Bragg reflector (DBR). Infrared waveguide pumping beam (74) generated by such a high-power unstable resonator semiconductor laser (14) is coupled into a nonlinear waveguide (28) and converted to visible or near ultraviolet output (100) through the process of second-harmonic generation.

Abstract: A laser system uses a high-power diode laser in cooperation with a nonimaging concentrator to end pump a relatively thin, solid-state, highly doped lasant. The laser system generates a very high density of excited ions in the lasant mode volume to produce high peak power pulses having comparable magnitudes over a wide range of pulse repetition frequencies.

Abstract: A high-power semiconductor diode laser or array of semiconductor diode lasers (14) optically end-pumps a compact, tunable, solid-state laser (28) with a pumping beam (74) well-matched to the absorption bandwidth and mode volume (78) of the solid-state laser (28). Tilted birefringent plates (210) positioned within the solid-state resonator cavity (16) are employed to control the spectral bandwidth and wavelength output of the waveguide pumping beam (204). Infrared output (100) generated by such a solid-state laser (28) is coupled into a nonlinear waveguide (200) and converted to visible output (206) through the process of second-harmonic generation.

Abstract: High-power optical output (60) that exhibits a high degree of lateral and transverse spatial coherence from an unstable resonator semiconductor laser (14) is efficiently optically coupled into a lasant mode volume (76) of a solid-state laser (28). This apparatus and method of pumping enable the preferred lasants, Cr:LiCAF and Cr:LiSAF, to reach laser operation at a reduced pumping level.