Abstract: One aspect of the invention provides an integrated circuit (IC). The IC comprises transistors and contact fuses. The contact fuses each comprise a conducting layer, a frustum-shaped contact has a narrower end that contacts the conducting layer and a first metal layer that is located over the conducting layer. A wider end of the frustum-shaped contact contacts the first metal layer. The frustum-shaped contact has a ratio of an opening of the wider end to the narrower end that is at least about 1.2. The contact fuses each further include a heat sink that is located over and contacts the first metal layer.

Abstract: The present invention provides a method for manufacturing a semiconductor device and a method for manufacturing an integrated circuit. The method for manufacturing the semiconductor device, among other steps, includes forming a gate structure (130) over a substrate (110), the gate structure (130) having L-shaped sidewall spacers (430) on opposing sidewalls thereof and placing source/drain implants (310 or 510) into the substrate (110) proximate the gate structure (130). The method for manufacturing the semiconductor device further includes removing at least a portion of a horizontal segment of the L-shaped sidewall spacers (430).

Abstract: The present invention provides a method for manufacturing a semiconductor device and method for manufacturing an integrated circuit including the semiconductor device. The method for manufacturing a semiconductor device (100), among other steps, includes forming a gate structure (130) over a substrate (110), the gate structure (130) having sidewall spacers (210 or 410) on opposing sidewalls thereof and placing source/drain implants (310, 510) into the substrate (110) proximate the gate structure (130). The method further includes removing at least a portion of the sidewall spacers (210 or 410) and annealing the source/drain implants (310, 510) to form source/drain regions (710) after removing the at least a portion of the sidewall spacers (210 or 410).