Abstract: A half bridge circuit including an isolation substrate, a metal layer on one surface of the isolation substrate, a power loop substrate on the metal layer, an upper switch on the power loop substrate, a lower switch on the power loop substrate and coupled to the upper switch, a capacitor on the power loop substrate and coupled to the upper switch, a first via through the power loop substrate and coupled between the lower switch and the metal layer, and a second via through the power loop substrate and coupled between the capacitor and the metal layer, wherein the power loop substrate has a height and separates the metal layer from the upper switch, lower switch and capacitor by the height.

Abstract: A half bridge circuit including an isolation substrate, a metal layer on one surface of the isolation substrate, a power loop substrate on the metal layer, an upper switch on the power loop substrate, a lower switch on the power loop substrate and coupled to the upper switch, a capacitor on the power loop substrate and coupled to the upper switch, a first via through the power loop substrate and coupled between the lower switch and the metal layer, and a second via through the power loop substrate and coupled between the capacitor and the metal layer, wherein the power loop substrate has a height and separates the metal layer from the upper switch, lower switch and capacitor by the height.

Abstract: Design constraints for a self protecting GaN HFET and in general any group III V HFET are described. The design constraints depend on the separation between the gate and the drain and the thickness of the buffer material between the channel layer and the substrate. In one embodiment the buffer region is thinned to provide a preferred breakdown location.

Abstract: A method of conditioning oxygen depleted air (ODA) exhausted from a fuel cell comprising the steps of; taking fuel from an aircraft fuel tank collector cell, delivering said fuel to a rear mounted engine via a primary heat exchanger, taking exhaust ODA from a fuel cell, passing the ODA through the primary heat exchanger in the opposite direction to the fuel, such that the fuel acts as a heat sink for the ODA, to cool the ODA, passing the ODA through a dryer, to dry the ODA and using the cooled, dried ODA to inert fuel in the aircraft fuel tank.

Abstract: A method of controlling a flow rate of inerting gas introduced into a vented aircraft fuel tank, the method comprising: monitoring changes in a quantity of a fuel in the aircraft fuel tank; monitoring changes in the ambient air pressure external to the aircraft fuel tank; and actively controlling a flow rate of inerting gas, {dot over (m)}(I), introduced into the aircraft fuel tank based upon changes in the quantity of fuel in the fuel tank and changes in the ambient air pressure, p. Also, an aircraft including a vented fuel tank, a supply of inerting gas for rendering inert the fuel tank ullage, and a controller for performing the method.

Abstract: A scalable endothermic reaction apparatus, system and method captures, concentrates, and converts atmospheric heat and humidity into diatomic hydrogen and stoichiometric oxygen for use within an exothermic device such as an engine, a turbine, or a fuel cell. No nitrogen or carbon compounds are introduced into the process utilized by the apparatus. All operating matter and energy utilized in the process is recycled in a closed loop system. Energy emitted from the exothermic device as waste is captured and immediately returned as waste hot water to the endothermic device. The waste output of the work-producing device is thus an exploitable asset that can be repeatedly returned in service through the endothermic device, without any emissions from an exhaust or tailpipe in the system. At peak efficiency, the exothermic and endothermic processes are formed as an apparatus that is thermally sealed in a free-standing and self-sustaining operating package.

Abstract: A normally-off transistor includes a channel layer, an electron supply layer overlaying the channel layer, a source electrode and a drain electrode on the electron supply layer, an area in the electrode supply layer between the source electrode and the drain electrode treated with a fluoride based plasma followed by a chlorine based plasma treatment, a gate insulator overlaying the area, and a gate electrode overlaying the gate insulator.

Abstract: Design constraints for a self protecting GaN HFET and in general any group III V HFET are described. The design constraints depend on the separation between the gate and the drain and the thickness of the buffer material between the channel layer and the substrate. In one embodiment the buffer region is thinned to provide a preferred breakdown location.

Abstract: An entertainment system for use with a magnetic resonance imaging (MRI) device that includes video glasses and headphones. A Faraday shield encloses the entertainment system to reduce adequately RF signals from entering or leaving the entertainment system. The entertainment system may have non-ferromagnetic RF low-pass filters between parts of the system, such as the control unit and the video glasses, to reduce higher RF signals from entering or leaving those parts. To replace the battery and or entertainment media, a person opens the entertainment system's Faraday shield when not MRI imaging or outside the MRI magnet room. The door has an Faraday shield overlapping the system Faraday shield and making low resistance RF contact. The entertainment system has a minimal amount of ferromagnetic material so that it may operate within the high magnetic field of the MRI magnet bore with minimal performance degradation. The entertainment system uses non-ferromagnetic speakers in the headphone.

Abstract: A method for initiating a refresh operation of a solid-state nonvolatile memory device coupled to a processor is disclosed. The method comprises determining an error number for a block of the solid-state nonvolatile memory. The error number corresponds to an amount of error bits in a page of the block having a greatest amount of error bits. The method further comprises comparing the error number with an error threshold and determining a reset number indicating an amount of times that the processor has been reset since a previous refresh operation was performed on the block of the solid-state nonvolatile memory. The method further includes comparing the number of resets with a reset threshold and refreshing the block of the solid-state nonvolatile memory when the number of errors exceeds the error threshold and the number of resets exceeds the reset threshold.

Abstract: A scalable endothermic reaction apparatus, system and method captures, concentrates, and converts atmospheric heat and humidity into diatomic hydrogen and stoichiometric oxygen for use within an exothermic device such as an engine, a turbine, or a fuel cell. No nitrogen or carbon compounds are introduced into the process utilized by the apparatus. All operating matter and energy utilized in the process is recycled in a closed loop system. Energy emitted from the exothermic device as waste is captured and immediately returned as waste hot water to the endothermic device. The waste output of the work-producing device is thus an exploitable asset that can be repeatedly returned in service through the endothermic device, without any emissions from an exhaust or tailpipe in the system. At peak efficiency, the exothermic and endothermic processes are formed as an apparatus that is thermally sealed in a free-standing and self-sustaining operating package.

Abstract: Non-direct bond copper isolated lateral wide band gap semiconductor devices are provided. One semiconductor device includes a heat sink, a buffer layer directly overlying the heat sink, and an epitaxial layer formed of a group-III nitride overlying the buffer layer. Another semiconductor device includes a heat sink, a substrate directly overlying the heat sink, a buffer layer directly overlying the substrate, and an epitaxial layer formed of a group-III nitride overlying the buffer layer. Being formed of a group-III nitride enables the various epitaxial layers to be electrically isolated from their respective heat sinks.

Abstract: An entertainment system for use with a magnetic resonance imaging (MRI) device that includes video glasses and headphones. A Faraday shield encloses the entertainment system to reduce adequately RF signals from entering or leaving the entertainment system. The entertainment system may have non-ferromagnetic RF low-pass filters between parts of the system, such as the control unit and the video glasses, to reduce higher RF signals from entering or leaving those parts. To replace the battery and or entertainment media, a person opens the entertainment system's Faraday shield when not MRI imaging or outside the MRI magnet room. The door has an Faraday shield overlapping the system Faraday shield and making low resistance RF contact. The entertainment system has a minimal amount of ferromagnetic material so that it may operate within the high magnetic field of the MRI magnet bore with minimal performance degradation. The entertainment system uses non-ferromagnetic speakers in the headphone.

Abstract: An arrangement for resolving different types of events includes a central system communicatively coupled to each of a plurality of lower level systems. The central system is configured to receive information associated with a particular event from one of the plurality of lower level systems, to determine an event type associated with the particular event, and to determine whether the central system includes a particular policy associated with resolving the event type associated with the particular event. When the central system includes the particular policy, the central system is further configured to resolve the particular event in accordance with the particular policy.

Abstract: One method for implementing a solution design methodology includes receiving a request to evaluate a value chain associated with an enterprise. The value chain comprises activities. The enterprise is queried for information associated with the activities. A current maturity level of the value chain is identified based, at least in part, on the information. A process model is implemented for increasing the current maturity level.

Abstract: A method for calculating flow control credits includes determining a number of entries added to each of a pair of storage devices, determining a number of entries removed from each of the storage devices, calculating a difference between available space in the storage devices, and calculating a number of credits to release based on the numbers of entries added to each of the storage devices, on the numbers of entries removed from each of the storage devices, and on the difference in available space. Entries removed from one storage device are treated as an entry added to the other storage device.

Abstract: A method for controlling data flow to a pair of storage devices includes receiving at least one new entry to store in a first storage device or a second storage device in the pair of storage devices and determining a number of entries made to the first and second storage devices out of the at least one new entry. The method also includes calculating a difference between available space in the first storage device and the second storage device, and calculating a number of credits used by the at least one new entry based on the numbers of entries to the first and second storage devices and on the difference in available space.

Abstract: A method for allocating data write credits for a storage device includes gathering requests for the data write credits from a plurality of data sources and assembling the plurality of data sources in a prioritized list. The method also includes removing lowest priority data sources one by one from the prioritized list until a total of the requests made by all data sources remaining in the prioritized list are within a number of available data write credits, and granting the requests for all the data sources remaining in the prioritized list.

Abstract: In a method of fabricating a metallization structure during formation of a microelectronic device, the improvement of reducing metal shorts in blanket metal deposition layers later subjected to reactive ion etching, comprising: a) depositing on a first underlayer, a blanket of an aluminum compound containing an electrical short reducing amount of an alloy metal in electrical contact with the underlayer; b) depositing a photoresist and exposing and developing to leave patterns of photoresist on the blanket aluminum compound containing an electrical short reducing amount of an alloy metal; and c) reactive ion etching to obtain an aluminum compound containing an alloy metal line characterized by reduced shorts in amounts less than the aluminum compound without said short reducing amount of alloy metal.

Abstract: In a method of fabricating a metallization structure during formation of a microelectronic device, the improvement of reducing metal shorts in blanket metal deposition layers later subjected to reactive ion etching, comprising: