Abstract: A semiconductor structure includes a substrate having a doped silicon substrate, a buried oxide layer, and a silicon device layer. A capacitor having an inner electrode and a node dielectric layer is formed in the substrate. The inner electrode and the node dielectric layer extend into the doped silicon substrate. A select transistor is disposed in the silicon device layer. An embedded contact is disposed atop the capacitor to electrically couple a doped region of the select transistor with the inner electrode. A first dielectric layer is disposed around the select transistor. A second dielectric layer is deposited on the first dielectric layer. A contact plug is formed in the second dielectric layer and the first dielectric layer and is in direct contact with the embedded contact. A memory stack with a MTJ element is disposed on the contact plug.

Abstract: A leak inhibition/detection device includes an absorbent material, a leak sensor in contact with the absorbent material, and an enclosure surrounding the absorbent material. The leak inhibition/detection device is configured to surround a joint between tubing and a cold plate/evaporator or a radiator/condenser of a liquid cooling module of an information handling system.

Abstract: An electrical apparatus comprising a first housing portion and a second housing portion, a first set of battery contacts and a second set of battery contacts, when the second housing portion is at a first relative position, the second set of battery contacts is at an actuation position; and when the second housing portion is at a second relative position, the second set of battery contacts is at a non-actuation position.

Abstract: A semiconductor structure includes a substrate having a doped silicon substrate, a buried oxide layer, and a silicon device layer. A trench capacitor having an inner electrode and a node dielectric layer is formed in a trench of the substrate. The inner electrode and the node dielectric layer extend into the doped silicon substrate. A select transistor is disposed in the silicon device layer. An embedded contact is disposed atop the trench capacitor to electrically couple a doped region of the select transistor with the inner electrode. A first dielectric layer is disposed around the select transistor. A second dielectric layer is deposited on the first dielectric layer. A contact plug is formed in the second dielectric layer and the first dielectric layer and is in direct contact with the embedded contact. A memory stack with a MTJ element is disposed on the contact plug.

Abstract: The present disclosure describes a system, method, and computer program for real-time and computationally efficient calculation of a recommended value range for a quote variable, such as price, discount, volume, or closing time. The system uses the highest-density interval (HDI) of probability density function (PDF) as a recommended or suggested value range for a quote variable. PDFs for the quote variable are precomputed for groups of related inputs, and each PDF is summarized as an array of discrete points. A dimension reduction technique is applied to the PDF inputs in both the training and real-time (non-training) phases to reduce the number of possible combinations of PDFs. During a quote-creation process, a PDF look-up table enables the system to efficiently identify an applicable PDF from the group of precomputed PDFs based on reduced input values.

Abstract: A leak inhibition/detection device includes an absorbent material, a leak sensor in contact with the absorbent material, and an enclosure surrounding the absorbent material. The leak inhibition/detection device is configured to surround a joint between tubing and a cold plate/evaporator or a radiator/condenser of a liquid cooling module of an information handling system.

Abstract: The present disclosure describes a system, method, and computer program for real-time and computationally efficient calculation of a recommended value range for a quote variable, such as price, discount, volume, or closing time. The system uses the highest-density interval (HDI) of probability density function (PDF) as a recommended or suggested value range for a quote variable. PDFs for the quote variable are precomputed for groups of related inputs, and each PDF is summarized as an array of discrete points. A dimension reduction technique is applied to the PDF inputs in both the training and real-time (non-training) phases to reduce the number of possible combinations of PDFs. During a quote-creation process, a PDF look-up table enables the system to efficiently identify an applicable PDF from the group of precomputed PDFs based on reduced input values.

Abstract: The present disclosure describes a system, method, and computer program for real-time and computationally efficient calculation of a recommended value range for a quote variable, such as price, discount, volume, or closing time. The system uses the highest-density interval (HDI) of probability density function (PDF) as a recommended or suggested value range for a quote variable. PDFs for the quote variable are precomputed for groups of related inputs, and each PDF is summarized as an array of discrete points. A dimension reduction technique is applied to the PDF inputs in both the training and real-time (non-training) phases to reduce the number of possible combinations of PDFs. During a quote-creation process, a PDF look-up table enables the system to efficiently identify an applicable PDF from the group of precomputed PDFs based on reduced input values.

Abstract: A picture management method and device, a picture synchronization method and device are disclosed. The picture management method can be applied to a client device, and comprises: receiving picture tags generated by a server device performing an image analysis based on original picture features received by the server device, the original picture feature being an original picture itself or original picture parameter(s); and classifying and archiving the original pictures represented by the original picture features according to the picture tags.

Abstract: The present disclosure describes a system, method, and computer program for real-time and computationally efficient calculation of a recommended value range for a quote variable, such as price, discount, volume, or closing time. The system uses the highest-density interval (HDI) of probability density function (PDF) as a recommended or suggested value range for a quote variable. PDFs for the quote variable are precomputed for groups of related inputs, and each PDF is summarized as an array of discrete points. A dimension reduction technique is applied to the PDF inputs in both the training and real-time (non-training) phases to reduce the number of possible combinations of PDFs. During a quote-creation process, a PDF look-up table enables the system to efficiently identify an applicable PDF from the group of precomputed PDFs based on reduced input values.

Abstract: A picture management method and device, a picture synchronization method and device are disclosed. The picture management method can be applied to a client device, and comprises: receiving picture tags generated by a server device performing an image analysis based on original picture features received by the server device, the original picture feature being an original picture itself or original picture parameter(s); and classifying and archiving the original pictures represented by the original picture features according to the picture tags.

Abstract: A loudspeaker that can be bi-wired or not according to a user's preference comprises a case in which is provided a plurality of audio drivers supplied by a respective plurality of audio networks, the networks being supplied (in turn) by a respective plurality of input terminal pairs, further comprising at least one switch bridging the terminals of different pairs, and adapted to selectively connect the terminals to each other.

Abstract: A method for displaying images of a camera associated with a vehicle includes the steps of displaying the images in a first mode if a first condition is satisfied, and displaying the images in a second mode if a second condition is satisfied.

Abstract: According to some embodiments, data may be received from a plurality of intelligent electronic devices (e.g., such as a set of protective relays). For each intelligent electronic device, status information may be stored based on the received data. Moreover, the status information may be displayed via a graphical user interface for the plurality of the intelligent electronic devices. The stored status information may also be transmitted to a remote central server via a communication network.

Abstract: A method for displaying images of a camera associated with a vehicle includes the steps of displaying the images in a first mode if a first condition is satisfied, and displaying the images in a second mode if a second condition is satisfied.

Abstract: Floating gates are formed in two separate polysilicon depositions steps resulting in distinct portions. The first formed portions are between isolation regions. A thick insulator is formed over the isolation regions and floating gate portions. The thick insulator is patterned to leave fences over the isolation regions. A thinning process, an isotropic etch in this example, is applied to these fences to make them thinner. Polysilicon sidewall spacers are formed on the sides of these fences. These sidewall spacers become the second portion of the floating gate. These second portions have the desired shape for significantly increasing the capacitance to the subsequently formed control gates, thereby reducing the gate voltage required for programming and erasing made by a relatively robust process.

Abstract: A method for forming a semiconductor device includes providing a semiconductor substrate comprising silicon, forming a layer of dielectric on the surface of the semiconductor substrate, forming a gate electrode comprising silicon over the layer of dielectric, recessing the layer of dielectric under the gate electrode, filling the recess with a discrete charge storage material, oxidizing a portion of the gate electrode, and oxidizing a portion of the semiconductor substrate.

Abstract: A memory and a method for programming a memory device are discussed. The method comprises selecting a cell to program, wherein the cell is coupled to a bit line, applying a first programming pulse, wherein the first programming pulse comprises applying a first voltage to the bit line, verifying if the cell is programmed after applying the first programming pulse, and applying a second programming pulse to the bit line after applying the first programming pulse if the cell is not programmed after applying the first programming pulse, wherein second programming pulse comprises applying a second voltage to the bit line, wherein the second voltage is different than the first voltage.

Abstract: In some embodiments, non-volatile memory (NVM) devices are formed on a silicon-on-insulator (SOI) substrate (12) by forming elevated sources and drains (56) in contact with extensions (46) within the top silicon layer (18) of the SOI substrate (12). Buried conductive regions (42) are formed within the top silicon layer (18) below the extensions (46) to mitigate floating body effects that occur when using SOI substrates. In other embodiments, NVM devices are formed using elevated sources and drains (56), extensions (46) and the buried conductive regions (42) in bulk semiconductor substrates. In any embodiment, logic devices may be formed in conjunction with NVM devices, wherein the logic and NVM devices have elevated sources and drains (56), extensions (46) and the buried conductive regions (42).

Abstract: An amplifier including a difference amplifier, said difference amplifier including a first output and a second output which are adapted for providing a PWM signal output to a load by signal difference between said first and said second outputs, said difference amplifier being adapted for operating in at least first and second alternative operating modes which are respectively characterised by first and second operating voltages, wherein during transition from one operating mode to another, the pulse area of the pulses of said first and second outputs of said difference amplifier are changed according to a pre-determined manner so that the pulse area of pulses of said first and second outputs at the end of said transitional mode is equivalent to the pulse area of the pulses of said first and second outputs immediately after the change of operating modes.