Abstract: The invention discloses a semiconductor multi-station processing chamber. Each of the multiple station includes a downward concave accommodation defined by walls and receives a pedestal therein. The pedestal and the walls define a first gap. A showerhead plate mounted on an upper lid above the pedestal to define a processing region. A second gap for supply swiping gas is defined between the showerhead plate and the upper lid. An isolation member is liftable between the downward concave accommodation and the showerhead plate to optionally encircle a processing region defined by the pedestal and the showerhead plate or to retract back into the downward concave accommodation. Such that, when the isolation member surrounds and encircles the processing region, the station is able to be structurally isolated from its neighboring one station.

Abstract: A composition for preventing or treating hypoglycemia in a patient in need thereof has a microgel that includes crosslinked polymers containing glucose-responsive moieties; and blood glucose-raising therapeutic agent loaded on or within the microgel. The microgel further includes any one or a combination of a stabilizing component and a loading-assisting component for the blood glucose- raising therapeutic agent. The polymers containing the glucose-responsive moieties form secondary crosslinks in response to low glucose level, thereby causing shrinking of the microgel and rapid release of the blood glucose-raising therapeutic agent. The composition can be used to prepare a composite microneedle patch for preventing or treating hypoglycemia, where the composition is embedded or integrated within an array of the microneedles of the microneedle patch device.

Abstract: This application relates to a double-sided deposition apparatus and method. The double-sided deposition apparatus includes: a chamber; an upper electrode disposed in the chamber and including a first showerhead, wherein the first showerhead is configured to provide a first reaction gas to an upper surface of a wafer, to form a first plasma region between the upper electrode and the upper surface of the wafer; and a lower electrode disposed in the chamber and including a second showerhead, wherein the second showerhead is configured to provide a second reaction gas to a lower surface of the wafer, to form a second plasma region between the lower electrode and the lower surface of the wafer, and wherein a period during which the first showerhead provides the first reaction gas at least partially overlaps a period during which the second showerhead provides the second reaction gas.

Abstract: The invention discloses a semiconductor multi-station processing chamber. Each of the multiple station includes a downward concave accommodation defined by walls and receives a pedestal therein. The pedestal and the walls define a first gap. A showerhead plate mounted on an upper lid above the pedestal to define a processing region. A second gap for supply swiping gas is defined between the showerhead plate and the upper lid. An isolation member is liftable between the downward concave accommodation and the showerhead plate to optionally encircle a processing region defined by the pedestal and the showerhead plate or to retract back into the downward concave accommodation. Such that, when the isolation member surrounds and encircles the processing region, the station is able to be structurally isolated from its neighboring one station.

Abstract: Disclosed is a load lock chamber which includes a chamber body including: at least one pair of cavities, defined in a layer structure of the chamber body to carry one or more wafer substrates; at least one internal conduit, defined between and coupled with the paired cavities, such that the paired cavities are communicated with each other and capable of conducting gas refilling and exhaustion; and a plurality of wafer supports for carrying the wafer substrates, the plurality of wafer supports being securely received in the paired cavities and able to calibrate with a machine arm frontend finger, wherein the wafer support includes grooves defined thereon for calibrating the machine arm frontend finger.

Abstract: The present invention provides nomograms and methods or predicting survival probabilities for patients diagnosed with metastatic pancreatic cancer based upon patient characteristics such as neutrophil to lymphocyte ratio, albumin level, Karnofsky performance status, the sum of the longest diameter of target lesions, liver metastasis, previous Whipple procedure, treatment with nab-paclitaxel, and analgesic use. In some aspects, the nomograms or methods are implemented by a non-transitory computer-readable storage medium.

Abstract: A device for manufacturing nanostructures consisting of carbon, such as monolayers, multilayer sheet structures, tubes, or fibers includes a gas inlet element having a housing cavity enclosed by housing walls, into which a gas feed line opens, through which a gaseous, in particular carbonaceous starting material can be fed into the housing cavity, having a plasma generator, which has components arranged at least partially in the housing cavity, which has at least one plasma electrode to which electrical voltage can be applied, to apply energy to the gaseous starting material by igniting a plasma and thus converting the gaseous starting material into a gaseous intermediate product, and having a gas outlet surface having a plurality of gas outlet openings, through which the gaseous intermediate product can exit out of the housing cavity. A gas heating unit is provided for assisting the conversion, which is arranged downstream of the components.

Abstract: Disclosed is a load lock chamber which includes a chamber body including: at least one pair of cavities, defined in a layer structure of the chamber body to carry one or more wafer substrates; at least one internal conduit, defined between and coupled with the paired cavities, such that the paired cavities are communicated with each other and capable of conducting gas refilling and exhaustion; and a plurality of wafer supports for carrying the wafer substrates, the plurality of wafer supports being securely received in the paired cavities and able to calibrate with a machine arm frontend finger, wherein the wafer support includes grooves defined thereon for calibrating the machine arm frontend finger.

Abstract: A composite dielectric structure having one or more Leakage Blocking Layers (LBL) interleaved with one or more Laminate Dielectric Layers (LDL), Alloy Dielectric Layers (ADL), or Co-deposit Dielectric Layers (CDL). Each LDL, ADL, and CDL includes dopants incorporated in a respective base dielectric layer (BDL); where LDLs are formed by incorporating a doping layer into a BDL using a laminate method, ADLs are formed by incorporating a dopant into a BDL using an alloying method; and CDLs are formed by pulsing a BDL base material and a dopant together using a co-deposit method.

Abstract: Methods and systems for forming a material on a substrate are provided. Aspects of the methods involve the controlled introduction of a plurality of vapor reactants into a deposition chamber to form a material on the substrate having uniform surface roughness, conformality, thickness and composition. Aspects of the systems include a vapor feed component, a vapor distribution component, a containment component, and a controller configured to operate the systems to carry out the methods.

Abstract: Provided are methods of filling gaps on a substrate by creating flowable silicon oxide-containing films. The methods involve introducing vapor-phase silicon-containing precursor and oxidant reactants into a reaction chamber containing the substrate under conditions such that a condensed flowable film is formed on the substrate. The flowable film at least partially fills gaps on the substrate. In certain embodiments, the methods involve using a catalyst in the formation of the film. The catalyst may be incorporated into one of the reactants and/or introduced as a separate reactant.

Abstract: There is disclosed a method for forming a TiSiN thin film on a substrate according to ALD including a first process of preheating a substrate while supplying Ar or N2 containing inert gas to a chamber, after disposing a substrate in a chamber; a second process of forming a TiN film on the substrate by repeating at least one time a process of purging over-supplied Ti containing gas after supplying Ti containing gas and inert gas after that and a process of purging residual product after supplying N containing gas and inert gas after that; a third process of forming a SiN film by repeating at least one time a process of purging over-supplied Si containing gas after supplying Si containing gas on the TiN film and supplying inert gas after that and a process of purging residual product after supplying N containing gas and supplying inert gas after that; and a fourth process of forming a TiSiN film having a desired thickness by repeating the second and third processes at least one time, a partial pressure range of

Abstract: A composite dielectric structure having one or more Leakage Blocking Layers (LBL) interleaved with one or more Laminate Dielectric Layers (LDL), Alloy Dielectric Layers (ADL), or Co-deposit Dielectric Layers (CDL). Each LDL, ADL, and CDL includes dopants incorporated in a respective base dielectric layer (BDL); where LDLs are formed by incorporating a doping layer into a BDL using a laminate method, ADLs are formed by incorporating a dopant into a BDL using an alloying method; and CDLs are formed by pulsing a BDL base material and a dopant together using a co-deposit method.

Abstract: The invention relates to a device for manufacturing nanostructures consisting of carbon, such as monolayers, multilayer sheet structures, tubes, or fibers having a gas inlet element (2) having a housing cavity (5) enclosed by housing walls (3, 3?, 3?), into which a gas feed line (6) opens, through which a gaseous, in particular carbonaceous starting material can be fed into the housing cavity (5), having a plasma generator, which has components (8, 9, 10) arranged at least partially in the housing cavity (5), which has at least one plasma electrode (9) to which electrical voltage can be applied, to apply energy to the gaseous starting material by igniting a plasma and thus convert it into a gaseous intermediate product, and having a gas outlet surface (4) having a plurality of gas outlet openings (7), through which the gaseous intermediate product can exit out of the housing cavity (5). A gas heating unit (11) is provided for assisting the conversion, which is arranged downstream of the components (8, 9, 10).

Abstract: There is disclosed a method for forming a TiSiN thin film on a substrate according to ALD including a first process of preheating a substrate while supplying Ar or N2 containing inert gas to a chamber, after disposing a substrate in a chamber; a second process of forming a TiN film on the substrate by repeating at least one time a process of purging over-supplied Ti containing gas after supplying Ti containing gas and inert gas after that and a process of purging residual product after supplying N containing gas and inert gas after that; a third process of forming a SiN film by repeating at least one time a process of purging over-supplied Si containing gas after supplying Si containing gas on the TiN film and supplying inert gas after that and a process of purging residual product after supplying N containing gas and supplying inert gas after that; and a fourth process of forming a TiSiN film having a desired thickness by repeating the second and third processes at least one time, a partial pressure range of

Abstract: A system is configured to identify prior search history associated with a user, where the prior search history includes information regarding searches initiated by the user and information regarding search results provided based on the searches. The system is further configured to filter the prior search history to select one of the search results, generate an information item for the search result, and provide the information item to a client, associated with the user, for presentation on a display associated with the client.

Abstract: Embodiments generally provide an apparatus and method for processing substrates using a multi-chamber processing system (e.g., a cluster tool) that has an increased system throughput, increased system reliability, substrates processed in the cluster tool have a more repeatable wafer history, and also the cluster tool has a smaller system footprint. In one embodiment, a cluster tool for processing a substrate includes a first processing rack, a first robot assembly and a second robot assembly operable to transfer substrates to substrate processing chambers in the first processing rack, and a horizontal motion assembly. The horizontal motion assembly includes one or more walls that form an interior region in which a motor is enclosed. The one or more walls defining an elongated opening through which a robot support interface travels, the robot support interface supporting a robot of the horizontal motion assembly.

Abstract: Methods of lining and/or filling gaps on a substrate by creating flowable silicon oxide-containing films are provided. The methods involve introducing vapor-phase silicon-containing precursor and oxidant reactants into a reaction chamber containing the substrate under conditions such that a condensed flowable film is formed on the substrate. The flowable film at least partially fills gaps on the substrates and is then converted into a silicon oxide film. In certain embodiments, the methods involve using a catalyst, e.g., a nucleophile or onium catalyst, in the formation of the film. The catalyst may be incorporated into one of the reactants and/or introduced as a separate reactant. Also provided are methods of converting the flowable film to a solid dielectric film. The methods of this invention may be used to line or fill high aspect ratio gaps, including gaps having aspect ratios ranging from 3:1 to 10:1.

Abstract: An apparatus for processing substrates using a multi-chamber processing system (e.g., a cluster tool) that has an increased system throughput, increased system reliability, a smaller system footprint, and a more repeatable wafer history. Embodiments provide for a cluster tool comprising first and second processing racks, each having two or more vertically stacked substrate processing chambers, a first robot assembly able to access the first processing rack from a first side, a second robot assembly able to access the first processing rack from a second side and the second processing rack from a first side, a third robot assembly able to access the second processing rack from a second side, and a fourth robot assembly able to access the first and second processing racks and to load substrates in a cassette.

Abstract: Embodiments generally provide an apparatus and method for processing substrates using a multi-chamber processing system (e.g., a cluster tool) that has an increased system throughput, increased system reliability, substrates processed in the cluster tool have a more repeatable wafer history, and also the cluster tool has a smaller system footprint. Embodiments also provide for a method and apparatus that are used to improve the coater chamber, the developer chamber, the post exposure bake chamber, the chill chamber, and the bake chamber process results. Embodiments also provide for a method and apparatus that are used to increase the reliability of the substrate transfer process to reduce system down time.