Abstract: The present invention is directed to an electrical device configured to be disposed in an electrical distribution system between a source of electrical power and an electrical load. The electrical distribution system includes at least one line hot conductor, a line neutral conductor, and a line ground conductor. The line neutral conductor is connected to the line ground conductor at a termination point in the electrical distribution system. The electrical load includes at least one load hot conductor, a load neutral conductor, and a load ground conductor. The device includes a grounding confirmation circuit that includes at least one signal generator that directs at least one test signal into a current path that includes at least the line ground conductor. The grounding confirmation circuit is configured to determine a ground continuity status of the current path based on at least one ground continuity measurement.

Abstract: The present invention is directed to an electrical device configured to be disposed in an electrical distribution system between a source of electrical power and an electrical load. The electrical distribution system includes at least one line hot conductor, a line neutral conductor, and a line ground conductor. The line neutral conductor and the line ground conductor are connected to earth ground at a termination point in the electrical distribution system. The electrical load includes at least one load hot conductor, a load neutral conductor, and a load ground conductor. The device comprises a power supply coupled to the power input mechanism. The power supply comprises at least one DC voltage output terminal and a reference terminal coupled to the line ground termination element.

Abstract: The present invention is directed to a protective device configured to be disposed in an electrical distribution system between a source of electrical power and an electrical load. The electrical distribution system includes at least one line hot conductor, a line neutral conductor, and a line ground conductor. The line neutral conductor is connected to the line ground conductor at a termination point in the electrical distribution system. The electrical load includes at least one load hot conductor, a load neutral conductor, and a load ground conductor, the device comprises a conditioning circuit configured to monitor a differential current flowing through the plurality of line termination elements and configured to generate a conditioning signal in response thereto. The conditioning signal propagates in a path formed by the line neutral conductor and the line ground conductor to thereby reduce a differential current propagating in the at least one line hot conductor and the line neutral conductor.

Abstract: A method, system, and computer program product for mitigating known software defects are provided in the illustrative embodiments. A code containing the defect is executed in a data processing system. An error caused by the defect is detected. A function implemented external to the code is called, where the function is a part of a library accessible to the code, and where the function is called for the code for a purpose other than to correct the error. A corrective code embedded in the function is executed, the corrective code attempting to correct the error. Executing the code is continued after the corrective code has corrected the error.

Abstract: The present invention is directed to a protective device configured to be disposed in an electrical distribution system between a source of electrical power and an electrical load. The electrical distribution system includes at least one line hot conductor, a line neutral conductor, and a line ground conductor. The line neutral conductor is connected to the line ground conductor at a termination point in the electrical distribution system. The electrical load includes at least one load hot conductor, a load neutral conductor, and a load ground conductor, the device comprises a conditioning circuit configured to monitor a differential current flowing through the plurality of line termination elements and configured to generate a conditioning signal in response thereto. The conditioning signal propagates in a path formed by the line neutral conductor and the line ground conductor to thereby reduce a differential current propagating in the at least one line hot conductor and the line neutral conductor.

Abstract: The present invention is directed to an electrical device configured to be disposed in an electrical distribution system between a source of electrical power and an electrical load. The electrical distribution system includes at least one line hot conductor, a line neutral conductor, and a line ground conductor. The line neutral conductor and the line ground conductor are connected to earth ground at a termination point in the electrical distribution system. The electrical load includes at least one load hot conductor, a load neutral conductor, and a load ground conductor. The device comprises a power supply coupled to the power input mechanism. The power supply comprises at least one DC voltage output terminal and a reference terminal coupled to the line ground termination element.

Abstract: The present invention is directed to an electrical device configured to be disposed in an electrical distribution system between a source of electrical power and an electrical load. The electrical distribution system includes at least one line hot conductor, a line neutral conductor, and a line ground conductor. The line neutral conductor is connected to the line ground conductor at a termination point in the electrical distribution system. The electrical load includes at least one load hot conductor, a load neutral conductor, and a load ground conductor. The device includes a grounding confirmation circuit that includes at least one signal generator that directs at least one test signal into a current path that includes at least the line ground conductor. The grounding confirmation circuit is configured to determine a ground continuity status of the current path based on at least one ground continuity measurement.

Abstract: The present invention provides a method of manufacturing a composition for polishing silica and silicon nitride on a semiconductor substrate. The method comprises ion-exchanging carboxylic acid polymer to reduce ammonia and combining by weight percent 0.01 to 5 of the ion-exchanged carboxylic acid polymer with 0.001 to 1 quaternary ammonium compound, 0.001 to 1 phthalic acid and salts thereof, 0.01 to 5 abrasive, and balance water.

Abstract: A system, composition, and a method for planarizing or polishing a composite substrate are provided. The planarizing or polishing system comprises (i) a polishing composition comprising (a) about 0.5 wt. % or more of fluoride ions, (b) about 1 wt. % or more of an amine, (c) about 0.1 wt. % or more of a base, and (d) water, and (ii) an abrasive. The present invention also provides a method of planarizing or polishing a composite substrate comprising contacting the substrate with a system comprising (i) a polishing composition comprising (a) about 0.5 wt. % or more of fluoride ions, (b) about 1 wt. % or more of an amine, (c) about 0.1 wt. % or more of a base, and (d) water, and (ii) an abrasive.

Abstract: The present invention provides an aqueous composition useful for polishing silica and silicon nitride on a semiconductor wafer comprising by weight percent 0.01 to 5 carboxylic acid polymer, 0.02 to 6 abrasive, 0.01 to 10 polyvinylpyrrolidone, 0 to 5 cationic compound, 0 to 5 zwitterionic compound and balance water, wherein the polyvinylpyrrolidone has a average molecular weight between 100 grams/mole to 1,000,000 grams/mole.

Abstract: The present invention provides an aqueous composition useful for polishing silica and silicon nitride on a semiconductor wafer comprising by weight percent 0.01 to 5 zwitterionic compound, 0.01 to 5 carboxylic acid polymer, 0.02 to 6 abrasive, 0 to 5 cationic compound and balance water, wherein the zwitterionic compound has the following structure: in which n is an integer, Y comprises hydrogen or an alkyl group, Z comprises carboxyl, sulfate or oxygen, M comprises nitrogen, phosphorus or a sulfur atom, and X1, X2 and X3 independently comprise substituents selected from the group comprising, hydrogen, an alkyl group and an aryl group.

Abstract: The present invention provides an aqueous composition useful for polishing conducting, semi-conducting and dielectric materials on a semiconductor wafer comprising by weight percent 0.01 to 5 zwitterionic compound, 0.01 to 5 cationic compound, 0.5 to 10 abrasive, 0 to 5 inorganic acids and salts thereof, and balance water, wherein the abrasive is filmed silica that has only been exposed to an acidic pH. The composition and method provide unexpected selectivity for removing conductive and semi-conductive layers relative to dielectric layers.

Abstract: The present invention provides a method for polishing silica and silicon nitride on a semiconductor wafer comprising the steps of planarizing the silica with a first aqueous composition comprising by weight percent 0.01 to 5 carboxylic acid polymer, 0.02 to 6 abrasive, 0.01 to 10 polyvinylpyrrolidone, 0 to 5 cationic compound, 0 to 1 phthalic acid and salts, 0 to 5 zwitterionic compound and balance water, wherein the polyvinylpyrrolidone has an average molecular weight between 100 grams/mole to 1,000,000 grams/mole. The method further provides detecting an endpoint to the planarization, and clearing the silica with a second aqueous composition comprising by weight percent 0.001 to 1 quaternary ammonium compound, 0.001 to 1 phthalic acid and salts thereof, 0.01 to 5 carboxylic acid polymer, 0.01 to 5 abrasive and balance water.

Abstract: An electrochemical planarization apparatus for planarizing a metallized surface on a workpiece includes a polishing pad and a platen. The platen is formed of conductive material, is disposed proximate to the polishing pad and is configured to have a negative charge during at least a portion of a planarization process. At least one electrical conductor is positioned within the platen. The electrical conductor has a first end connected to a power source. A workpiece carrier is configured to carry a workpiece and press the workpiece against the polishing pad. The power source applies a positive charge to the workpiece via the electrical conductor so that an electric potential difference between the metallized surface of the workpiece and the platen is created to remove at least a portion of the metallized surface from the workpiece.

Abstract: The present invention provides an aqueous composition useful for polishing silica and silicon nitride on a semiconductor wafer comprising by weight percent 0.01 to 5 carboxylic acid polymer, 0.02 to 6 abrasive, 0.01 to 10 polyvinylpyrrolidone, 0 to 5 cationic compound, 0 to 5 zwitterionic compound and balance water, wherein the polyvinylpyrrolidone has a average molecular weight between 100 grams/mole to 1,000,000 grams/mole.

Abstract: The present invention provides a method of manufacturing a fumed silica useful for polishing tungsten and titanium on a semiconductor wafer. The method comprises the act of providing a predetermined volume of water and providing a predetermined concentration of the fumed silica, wherein the concentration of the fumed silica is at least by weight percent 35 of the volume of water. Further, the invention provides the act of mixing an acid into the volume of water to acidify the water, wherein the concentration of the acid is by weight percent 0.0010 to 0.5 of the concentration of the fumed silica, and dispersing the fumed silica into the acidified water. Further, the invention provides diluting the concentration of the fumed silica, wherein the pH of the water is 1 to 7 and collecting the fumed silica.

Abstract: The present invention provides an acidic aqueous composition useful for polishing tungsten and titanium on a semiconductor wafer comprising by weight percent 0.5 to 10 abrasive, 0.5 to 9 oxidizer, 0.1 to 5 complexing agent, 0.1 to 5 chelating agent and balance water, wherein the abrasive is fumed silica that has a surface area of greater than 90 m2/g and has only been exposed to an acidic pH.

Abstract: The present invention provides an aqueous composition useful for polishing silica and silicon nitride on a semiconductor wafer comprising by weight percent 0.01 to 5 zwitterionic compound, 0.01 to 5 carboxylic acid polymer, 0.02 to 6 abrasive, 0 to 5 cationic compound and balance water, wherein the zwitterionic compound has the following structure: in which n is an integer, Y comprises hydrogen or an alkyl group, Z comprises carboxyl, sulfate or oxygen, M comprises nitrogen, phosphorus or a sulfur atom, and X1, X2 and X3 independently comprise substituents selected from the group comprising, hydrogen, an alkyl group and an aryl group.

Abstract: The present invention provides an aqueous composition useful for polishing silica and silicon nitride on a semiconductor wafer comprising by weight percent 0.001 to 1 phthalic acid and salts thereof, 0.001 to 1 quaternary ammonium compound, 0.01 to 5 carboxylic acid polymer, 0.01 to 5 abrasive and balance water.

Abstract: A system, composition, and a method for planarizing or polishing a composite substrate are provided. The planarizing or polishing system comprises (i) a polishing composition comprising (a) about 0.5 wt. % or more of fluoride 5 ions, (b) about 1 wt. % or more of an amine, (c) about 0.1 wt. % or more of a base, and (d) water, and (ii) an abrasive. The present invention also provides a method of planarizing or polishing a composite substrate comprising contacting the substrate with a system comprising (i) a polishing composition comprising (a) about 0.5 wt. % or more of fluoride ions, (b) about 1 wt. % or more of an amine, (c) about 0.1 wt. % or more of a base, and (d) water, and (ii) an abrasive.