Patents by Inventor Brian R. York
Brian R. York has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11682420Abstract: Certain embodiments are directed to a spin torque oscillator (STO) device in a microwave assisted magnetic recording (MAMR) device. The magnetic recording head includes a seed layer, a spin polarization layer over the seed layer, a spacer layer over the spin polarization layer, and a field generation layer is over the spacer layer. In one embodiment, the seed layer comprises a tantalum alloy layer. In another embodiment, the seed layer comprises a template layer and a damping reduction layer over the template layer. In yet another embodiment, the seed layer comprises a texture reset layer, a template layer on the texture reset layer, and a damping reduction layer on the template layer.Type: GrantFiled: August 31, 2021Date of Patent: June 20, 2023Assignee: Western Digital Technologies, Inc.Inventors: James Mac Freitag, Zheng Gao, Susumu Okamura, Brian R. York
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Publication number: 20230121375Abstract: The present disclosure generally relate to spin-orbit torque (SOT) devices comprising a topological insulator (TI) modulation layer. The TI modulation layer comprises a plurality of bismuth or bismuth-rich composition modulation layers, a plurality of TI lamellae layers comprising BiSb having a (012) crystal orientation, and a plurality of texturing layers. The TI lamellae layers comprise dopants or clusters of atoms, the clusters of atoms comprising a carbide, a nitride, an oxide, or a composite ceramic material. The clusters of atoms are configured to have a grain boundary glass forming temperature of less than about 400° C. Doping the TI lamellae layers comprising BiSb having a (012) crystal orientation with clusters of atoms comprising a carbide, a nitride, an oxide, or a composite ceramic material enable the SOT MTJ device to operate at higher temperatures while inhibiting migration of Sb from the BiSb of the TI lamellae layers.Type: ApplicationFiled: December 16, 2022Publication date: April 20, 2023Applicant: Western Digital Technologies, Inc.Inventors: Quang LE, Brian R. YORK, Cherngye HWANG, Susumu OKAMURA, Xiaoyong LIU, Kuok San HO, Hisashi TAKANO
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Publication number: 20230084970Abstract: A tunneling magnetoresistance (TMR) device has an improved seed layer for the lower or first ferromagnetic layer that eliminates the need for boron in the two ferromagnetic layers. The seed layer, for example a RuAl alloy, has a B2 crystalline structure with (001) texture when deposited on an amorphous pre-seed layer, meaning that the (001) plane is parallel to the surface of the TMR device substrate. The subsequently deposited first ferromagnetic layer, like a CoFe alloy, and the tunneling barrier layer, typically MgO, inherit the (001) texture of the seed layer.Type: ApplicationFiled: September 10, 2021Publication date: March 16, 2023Inventors: Susumu Okamura, Christian Kaiser, Brian R. York
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Publication number: 20230047223Abstract: The present disclosure generally relate to spin-orbit torque (SOT) magnetic tunnel junction (MTJ) devices comprising a buffer layer, a bismuth antimony (BiSb) layer having a (012) orientation disposed on the buffer layer, and an interlayer disposed on the BiSb layer. The buffer layer and the interlayer may each independently be a single layer of material or a multilayer of material. The buffer layer and the interlayer each comprise at least one of a covalently bonded amorphous material, a tetragonal (001) material, a tetragonal (110) material, a body-centered cubic (bcc) (100) material, a face-centered cubic (fcc) (100) material, a textured bcc (100) material, a textured fcc (100) material, a textured (100) material, or an amorphous metallic material. The buffer layer and the interlayer inhibit antimony (Sb) migration within the BiSb layer and enhance uniformity of the BiSb layer while further promoting the (012) orientation of the BiSb layer.Type: ApplicationFiled: August 13, 2021Publication date: February 16, 2023Inventors: Quang LE, Brian R. YORK, Cherngye HWANG, Susumu OKAMURA, Michael GRIBELYUK, Xiaoyong LIU, Kuok San HO, Hisashi TAKANO
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Publication number: 20230027086Abstract: A spin-orbit torque (SOT) magnetic tunnel junction (MTJ) device includes a substrate, a seed layer over the substrate, and a bismuth antimony (BiSb) layer having (0120) orientation on the seed layer. The seed layer includes a silicide layer and a surface control layer. The silicide layer includes a material of NiSi, NiFeSi, NiFeTaSi, NiCuSi, CoSi, CoFeSi, CoFeTaSi, CoCuSi, or combinations thereof. The surface control layer includes a material of NiFe, NiFeTa, NiTa, NiW, NiFeW, NiCu, NiCuM, NiFeCu, CoTa, CoFeTa, NiCoTa, Co, CoM, CoNiM, CoNi, NiSi, CoSi, NiCoSi, Cu, CuAgM, CuM, or combinations thereof, in which M is Fe, Cu, Co, Ta, Ag, Ni, Mn, Cr, V, Ti, or Si.Type: ApplicationFiled: September 28, 2022Publication date: January 26, 2023Applicant: Western Digital Technologies, Inc.Inventors: Quang LE, Cherngye HWANG, Brian R. YORK, Andrew CHEN, Thao A. NGUYEN, Yongchul AHN, Xiaoyong LIU, Hongquan JIANG, Zheng GAO, Kuok San HO
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Patent number: 11532323Abstract: The present disclosure generally relate to spin-orbit torque (SOT) magnetic tunnel junction (MTJ) devices comprising a topological insulator (TI) modulation layer. The TI modulation layer comprises a plurality of bismuth or bismuth-rich composition modulation layers, a plurality of TI lamellae layers comprising BiSb having a (012) crystal orientation, and a plurality of texturing layers. The TI lamellae layers comprise dopants or clusters of atoms, the clusters of atoms comprising a carbide, a nitride, an oxide, or a composite ceramic material. The clusters of atoms are configured to have a grain boundary glass forming temperature of less than about 400° C. Doping the TI lamellae layers comprising BiSb having a (012) crystal orientation with clusters of atoms comprising a carbide, a nitride, an oxide, or a composite ceramic material enable the SOT MTJ device to operate at higher temperatures while inhibiting migration of Sb from the BiSb of the TI lamellae layers.Type: GrantFiled: August 18, 2021Date of Patent: December 20, 2022Assignee: Western Digital Technologies, Inc.Inventors: Quang Le, Brian R. York, Cherngye Hwang, Susumu Okamura, Xiaoyong Liu, Kuok San Ho, Hisashi Takano
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Patent number: 11495741Abstract: A SOT device includes a bismuth antimony dopant element (BiSbE) alloy layer over a substrate. The BiSbE alloy layer is used as a topological insulator. The BiSbE alloy layer includes bismuth, antimony, AND a dopant element. The dopant element is a non-metallic dopant element, a metallic dopant element, and combinations thereof. Examples of metallic dopant elements include Ni, Co, Fe, CoFe, NiFe, NiCo, NiCu, CoCu, NiAg, CuAg, Cu, Al, Zn, Ag, Ga, In, or combinations thereof. Examples of non-metallic dopant elements include Si, P, Ge, or combinations thereof. The BiSbE alloy layer can include a plurality of BiSb lamellae layers and one or more dopant element lamellae layers. The BiSbE alloy layer has a (012) orientation.Type: GrantFiled: June 30, 2020Date of Patent: November 8, 2022Assignee: Western Digital Technologies, Inc.Inventors: Brian R. York, Cherngye Hwang, Alan Spool, Michael Gribelyuk, Quang Le
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Patent number: 11489108Abstract: A spin-orbit torque (SOT) magnetic tunnel junction (MTJ) device includes a substrate, a seed layer over the substrate, and a bismuth antimony (BiSb) layer having (0120) orientation on the seed layer. The seed layer includes a silicide layer and a surface control layer. The silicide layer includes a material of NiSi, NiFeSi, NiFeTaSi, NiCuSi, CoSi, CoFeSi, CoFeTaSi, CoCuSi, or combinations thereof. The surface control layer includes a material of NiFe, NiFeTa, NiTa, NiW, NiFeW, NiCu, NiCuM, NiFeCu, CoTa, CoFeTa, NiCoTa, Co, CoM, CoNiM, CoNi, NiSi, CoSi, NiCoSi, Cu, CuAgM, CuM, or combinations thereof, in which M is Fe, Cu, Co, Ta, Ag, Ni, Mn, Cr, V, Ti, or Si.Type: GrantFiled: April 28, 2020Date of Patent: November 1, 2022Assignee: Western Digital Technologies, Inc.Inventors: Quang Le, Cherngye Hwang, Brian R. York, Andrew Chen, Thao A. Nguyen, Yongchul Ahn, Xiaoyong Liu, Hongquan Jiang, Zheng Gao, Kuok San Ho
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Publication number: 20220013138Abstract: The present disclosure generally relates to spin-orbital torque (SOT) differential reader designs. The SOT differential reader is a multi-terminal device comprising a first seed layer, a first spin hall effect (SHE) layer, a first interlayer, a first free layer, a gap layer, a second seed layer, a second SHE layer, a second free layer, and a second interlayer. The gap layer is disposed between the first SHE layer and the second SHE layer. The materials and dimensions used for the first and second seed layers, the first and second interlayers, and the first and second SHE layers affect the resulting spin hall voltage converted from spin current injected from the first free layer and the second free layer, as well as the ability to tune the first and second SHE layers. Moreover, the SOT differential reader improves reader resolution without decreasing the shield-to-shield spacing (i.e., read-gap).Type: ApplicationFiled: August 5, 2021Publication date: January 13, 2022Applicant: Western Digital Technologies, Inc.Inventors: Cherngye HWANG, Xiaoyong LIU, Quang LE, Kuok San HO, Hisashi TAKANO, Brian R. YORK
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Publication number: 20210408370Abstract: A SOT device includes a bismuth antimony dopant element (BiSbE) alloy layer over a substrate. The BiSbE alloy layer is used as a topological insulator. The BiSbE alloy layer includes bismuth, antimony, AND a dopant element. The dopant element is a non-metallic dopant element, a metallic dopant element, and combinations thereof. Examples of metallic dopant elements include Ni, Co, Fe, CoFe, NiFe, NiCo, NiCu, CoCu, NiAg, CuAg, Cu, Al, Zn, Ag, Ga, In, or combinations thereof. Examples of non-metallic dopant elements include Si, P, Ge, or combinations thereof. The BiSbE alloy layer can include a plurality of BiSb lamellae layers and one or more dopant element lamellae layers. The BiSbE alloy layer has a (012) orientation.Type: ApplicationFiled: June 30, 2020Publication date: December 30, 2021Inventors: Brian R. YORK, Cherngye HWANG, Alan SPOOL, Michael GRIBELYUK, Quang LE
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Publication number: 20210390977Abstract: Certain embodiments are directed to a spin torque oscillator (STO) device in a microwave assisted magnetic recording (MAMR) device. The magnetic recording head includes a seed layer, a spin polarization layer over the seed layer, a spacer layer over the spin polarization layer, and a field generation layer is over the spacer layer. In one embodiment, the seed layer comprises a tantalum alloy layer. In another embodiment, the seed layer comprises a template layer and a damping reduction layer over the template layer. In yet another embodiment, the seed layer comprises a texture reset layer, a template layer on the texture reset layer, and a damping reduction layer on the template layer.Type: ApplicationFiled: August 31, 2021Publication date: December 16, 2021Applicant: Western Digital Technologies, Inc.Inventors: James Mac FREITAG, Zheng GAO, Susumu OKAMURA, Brian R. YORK
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Publication number: 20210336127Abstract: A spin-orbit torque (SOT) magnetic tunnel junction (MTJ) device includes a substrate, a seed layer over the substrate, and a bismuth antimony (BiSb) layer having (0120) orientation on the seed layer. The seed layer includes a silicide layer and a surface control layer. The silicide layer includes a material of NiSi, NiFeSi, NiFeTaSi, NiCuSi, CoSi, CoFeSi, CoFeTaSi, CoCuSi, or combinations thereof. The surface control layer includes a material of NiFe, NiFeTa, NiTa, NiW, NiFeW, NiCu, NiCuM, NiFeCu, CoTa, CoFeTa, NiCoTa, Co, CoM, CoNiM, CoNi, NiSi, CoSi, NiCoSi, Cu, CuAgM, CuM, or combinations thereof, in which M is Fe, Cu, Co, Ta, Ag, Ni, Mn, Cr, V, Ti, or Si.Type: ApplicationFiled: April 28, 2020Publication date: October 28, 2021Inventors: Quang LE, Cherngye HWANG, Brian R. YORK, Andrew CHEN, Thao A. NGUYEN, Yongchul AHN, Xiaoyong LIU, Hongquan JIANG, Zheng GAO, Kuok San HO
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Patent number: 11094338Abstract: The present disclosure generally relates to spin-orbital torque (SOT) differential reader designs. The SOT differential reader is a multi-terminal device comprising a first seed layer, a first spin hall effect (SHE) layer, a first interlayer, a first free layer, a gap layer, a second seed layer, a second SHE layer, a second free layer, and a second interlayer. The gap layer is disposed between the first SHE layer and the second SHE layer. The materials and dimensions used for the first and second seed layers, the first and second interlayers, and the first and second SHE layers affect the resulting spin hall voltage converted from spin current injected from the first free layer and the second free layer, as well as the ability to tune the first and second SHE layers. Moreover, the SOT differential reader improves reader resolution without decreasing the shield-to-shield spacing (i.e., read-gap).Type: GrantFiled: September 23, 2020Date of Patent: August 17, 2021Assignee: Western Digital Technologies, Inc.Inventors: Cherngye Hwang, Xiaoyong Liu, Quang Le, Kuok San Ho, Hisashi Takano, Brian R. York
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Publication number: 20210249038Abstract: A spin-orbit torque (SOT) magnetic tunnel junction (MTJ) device includes a substrate, a buffer layer formed over the substrate, and a bismuth antimony (BiSb) layer formed over the buffer layer, the BiSb layer having a (012) orientation. In certain embodiments, the SOT MTJ device is part of a microwave assisted magnetic recording (MAMR) write head. In certain embodiments, the SOT MTJ device is part of a magnetoresistive random access memory (MRAM) device.Type: ApplicationFiled: November 20, 2020Publication date: August 12, 2021Inventors: Quang LE, Cherngye HWANG, Brian R. YORK, Thao A. NGUYEN, Zheng GAO, Kuok San HO, Pham Nam Hai
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Patent number: 9805747Abstract: Ionized physical vapor deposition (IPVD) is used to form a magnetic recording disk drive write head main pole with thin side gap layers and a thicker leading gap layer. A metal or metal alloy is formed by IPVD in a trench with a bottom and outwardly sloping sidewalls. An optional Ru seed layer is deposited on the metal or metal alloy. This is followed by atomic layer deposition (ALD) of a Ru smoothing layer. If the IPVD results in metal or metal alloy side gap layers with a rough surface, the ALD process is modified, resulting in a smooth Ru smoothing layer that does not replicate the rough surface of the side gap layers.Type: GrantFiled: August 17, 2015Date of Patent: October 31, 2017Assignee: Western Digital Technologies, Inc.Inventors: April D. Hixson-Goldsmith, Ning Shi, Kyusik Shin, Suping Song, Brian R. York
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Publication number: 20170053668Abstract: Ionized physical vapor deposition (IPVD) is used to form a magnetic recording disk drive write head main pole with thin side gap layers and a thicker leading gap layer. A metal or metal alloy is formed by IPVD in a trench with a bottom and outwardly sloping sidewalls. An optional Ru seed layer is deposited on the metal or metal alloy. This is followed by atomic layer deposition (ALD) of a Ru smoothing layer. If the IPVD results in metal or metal alloy side gap layers with a rough surface, the ALD process is modified, resulting in a smooth Ru smoothing layer that does not replicate the rough surface of the side gap layers.Type: ApplicationFiled: August 17, 2015Publication date: February 23, 2017Inventors: April D. Hixson-Goldsmith, Ning Shi, Kyusik Shin, Suping Song, Brian R. York
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Patent number: 9040180Abstract: A perpendicular magnetic recording disk has a graded-anisotropy recording layer (RL) formed of at least two ferromagnetically exchange coupled CoPtCr-oxide magnetic layers (MAG1 and MAG2) with two nucleation films (NF1 and NF2) between the magnetic layers. NF1 is a metal film, preferably Ru or a Ru-based alloy like RuCr, sputter deposited on MAG1 at low pressure to a thickness between about 0.1-1.5 nm. NF2 is a metal oxide film, preferably an oxide of Ta, sputter deposited on NF1 at high pressure to a thickness between about 0.2-1.0 nm. MAG2 is sputter deposited over NF2. NF1 and NF2 provide a significant reduction in average grain size in the RL from a graded-anisotropy RL without nucleation films between MAG1 and MAG2, while also assuring that MAG1 and MAG2 are strongly exchange coupled.Type: GrantFiled: June 8, 2011Date of Patent: May 26, 2015Assignee: HGST Netherlands B.V.Inventors: Ernesto E. Marinero, Dieter K. Weller, Brian R. York
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Patent number: 8988824Abstract: A method for manufacturing a magnetic write head that has improved write poled uniformity and bevel angle control. The method uses a damascene process to form the write pole, wherein a trench is formed in a RIEable fill layer, and an adhesion layer is located only in areas outside of the trench. A seed layer is deposited into the trench, followed by a non-magnetic gap layer followed by electroplating of a magnetic material. A chemical mechanical polishing process is then performed, thereby forming a magnetic write pole within the trench. The adhesion layer located outside of the trench prevents de-lamination during the chemical mechanical polishing. However, not having any adhesion layer in the trench prevent oxidation related waviness or other deformation of the sides of the write pole.Type: GrantFiled: December 23, 2013Date of Patent: March 24, 2015Assignee: HGST Netherlands B.V.Inventors: Elizabeth A. Brinkman, Ning Shi, Brian R. York, Sue S. Zhang
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Patent number: 8760804Abstract: A magnetic head according to one embodiment includes a nonmagnetic gap layer in a trench; a pole seed layer above the nonmagnetic gap layer; and a pole layer of a magnetic material above the pole seed layer, wherein at least one of the nonmagnetic gap layer, the pole seed layer and the pole layer has nitrogen therein. A magnetic head according to another embodiment includes a nonmagnetic gap layer in a trench; a pole seed layer above the nonmagnetic gap layer, the pole seed layer being comprised primarily of a material selected from a group consisting of NiCr, Ta/Ru, Ta/Rh, NiCr/Ru, NiCr/Rh, NiCr, CoOx, Ru, Rh, Cu, Au/MgO, Ta/Cu; and a pole layer comprised primarily of CoFe above the pole seed layer, wherein at least one of the nonmagnetic gap layer, the pole seed layer and the pole layer has nitrogen therein.Type: GrantFiled: March 2, 2012Date of Patent: June 24, 2014Assignee: HGST Netherlands B.V.Inventors: Elizabeth A. Brinkman, Ning Shi, Brian R. York
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Patent number: 8611053Abstract: A current-perpendicular-to-the-plane giant magnetoresistance (CPP-GMR) sensor has a multilayer reference layer containing a Heusler alloy. The multilayer reference layer may be a simple pinned layer or the AP2 layer of an antiparallel (AP)-pinned structure. The multilayer reference layer is formed of a crystalline non-Heusler alloy ferromagnetic layer on either an antiferromagnetic layer (in a simple pinned structure) or an antiparallel coupling (APC) layer (in an AP-pinned structure), a Heusler alloy layer adjacent the sensor's nonmagnetic electrically conducting spacer layer, and an intermediate substantially non-crystalline X-containing layer between the crystalline non-Heusler alloy layer and the Heusler alloy layer. The element X is selected from one or more of tantalum (Ta), hafnium (Hf), niobium (Nb) and boron (B).Type: GrantFiled: March 8, 2012Date of Patent: December 17, 2013Assignee: HGST Netherlands B.V.Inventors: Elizabeth Ann Brinkman, Matthew J. Carey, Jeffrey R. Childress, Young-suk Choi, Brian R. York