Abstract: A method forms a feature pattern on a substrate by exposing the substrate, using a mask having a pattern of features thereon, with illumination having a first set of settings. The substrate is exposed a second time, using the same mask having the pattern of features thereon, with illumination having a second set of settings. The mask having the pattern of features thereon remains stationary between the two illumination exposures of the substrate.

Abstract: A method forms patterns on a substrate by exposing the substrate a first time and exposing the substrate a second time using a mask containing gray-tone features. The gray-tone features locally adjust an exposure dose in regions corresponding to features defined in the primary exposure. Moreover, the gray-tone features enable the forming of features having different critical dimensions on a substrate. The gray-tone features may be sub-resolution features and formed by pixellation. The trim mask containing gray-tone features may have regions with different transmissivities.

Abstract: A method forms patterns on a substrate by exposing the substrate a first time and exposing the substrate a second time using a mask containing gray-tone features. The gray-tone features locally adjust an exposure dose in regions corresponding to features defined in the primary exposure. Moreover, the gray-tone features enable the forming of features having different critical dimensions on a substrate. The gray-tone features may be sub-resolution features and formed by pixellation. The trim mask containing gray-tone features may have regions with different transmissivities.

Abstract: A circuit fabrication and lithography process utilizes a mask including dense repetitive structures of features that result in a wide array of fine densely populated features on the exposed substrate film. Following this, a trimming procedure is performed to remove any unwanted fine patterned features providing multiple trimmed patterns on the substrate. An optional final step adds additional features as well as the interconnect features thus forming a circuit pattern. In this manner, all fine features may be generated using the exact same density of intensity patterns, and therefore, maximum consistency between features is established without the need for optical proximity correction.

Abstract: A method forms a feature pattern on a substrate by exposing the substrate, using a mask having a pattern of features thereon, with illumination having a first set of settings. The substrate is exposed a second time, using the same mask having the pattern of features thereon, with illumination having a second set of settings. The mask having the pattern of features thereon remains stationary between the two illumination exposures of the substrate.

Abstract: A method forms patterns on a substrate by exposing the substrate a first time and exposing the substrate a second time using a mask containing gray-tone features. The gray-tone features locally adjust an exposure dose in regions corresponding to features defined in the primary exposure. Moreover, the gray-tone features enable the forming of features having different critical dimensions on a substrate. The gray-tone features may be sub-resolution features and formed by pixellation. The trim mask containing gray-tone features may have regions with different transmissivities.

Abstract: A circuit fabrication and lithography process utilizes a mask including dense repetitive structures of features that result in a wide array of fine densely populated features on the exposed substrate film. Following this, a trimming procedure is performed to remove any unwanted fine patterned features providing multiple trimmed patterns on the substrate. An optional final step adds additional features as well as the interconnect features thus forming a circuit pattern. In this manner, all fine features may be generated using the exact same density of intensity patterns, and therefore, maximum consistency between features is established without the need for optical proximity correction.