Abstract: An optoelectronic semiconductor component has a carrier and at least one semiconductor chip for emitting electromagnetic radiation. The semiconductor chip has two or more individually controllable elements. The semiconductor component additionally has a wavelength conversion element for at least partial conversion of the primary radiation emitted by the semiconductor chip into a secondary electromagnetic radiation. Each of the elements is suitable for generating primary radiation. The wavelength conversion element is structured into subregions. At least one individually controllable element of the semiconductor chip is associated with each subregion of the wavelength conversion element.

Abstract: A method for producing optoelectronic semiconductor components (100) is specified, wherein a carrier (1) having a carrier main side (11) is provided. Furthermore, a plurality of singulated optoelectronic semiconductor chips (2) are provided, wherein the semiconductor chips (2) each have a main emission side (21) and a contact side (22) opposite the main emission side (21). The singulated semiconductor chips (2) are then applied to the carrier main side (11), such that the contact side (22) in each case faces the carrier main side (11). In regions between the semiconductor chips, a mask frame (3) is applied, wherein the mask frame (3) is a grid of partitions (31). In a plan view of the carrier main side (11), each semiconductor chip (2) is surrounded all around by the partitions (31). The semiconductor chips (2) are potted with a conversion material (4) such that a conversion element is respectively formed on the semiconductor chips (2).

Abstract: Various embodiments may relate to a wavelength conversion element including at least one sintered wavelength converting material, wherein a grid is formed by channels within the sintered wavelength converting material, the channels are at least partially surrounded by the sintered wavelength converting material, the channels reach at least partially through the sintered wavelength converting material in a direction perpendicular or oblique to a main extension direction of the wavelength conversion element, and the channels contain a non-converting sintered separator material.

Abstract: A light-emitting device includes a conversion element including a light-emitting surface provided with a conversion layer, wherein the conversion layer contains a matrix material and a converter material, both the matrix material and the converter material are materials that can be vaporized under high vacuum, the matrix material and the converter material are applied to the light-emitting surface by vaporization under a high vacuum, and the matrix material has the structural formula where R1, R2, R3, R4 and X may be mutually independently selected from the group comprising F, Cl and H, and n>=2.

Abstract: Disclosed is a method for producing a wavelength conversion element (10) wherein a wavelength conversion layer (100) is provided, the surface thereof is treated with a plasma (50), and the wavelength conversion layer is punched. Also disclosed are a wavelength conversion layer and an optoelectronic component comprising a wavelength conversion layer.

Abstract: A light-emitting arrangement includes a radiation-emitting semiconductor chip that, during operation, emits primary radiation at least from a main emission surface, a first conversion element that absorbs part of the primary radiation and emits secondary radiation, and a deflection element that causes a direction change for part of the primary radiation, wherein the first conversion element is arranged in a lateral direction next to the radiation-emitting semiconductor chip, the deflection element guides part of the primary radiation onto the first conversion element, and the light-emitting arrangement, in operation, emits mixed light including the primary radiation and the secondary radiation.

Abstract: A method for producing a ceramic conversion element and a light-emitting device are disclosed. In an embodiment the method includes providing at least four functional layers, each being a green body or a ceramic, wherein first functional layer is formed as a first luminous layer comprising an oxide and configured to at least partially convert light of a first wavelength range into light of a second wavelength range, wherein a second functional layer is formed as a second luminous layer comprising a nitride and configured to at least partially convert light of the first wavelength range into light of a third wavelength range, wherein a third functional layer is formed as a first intermediate layer, wherein the first intermediate layer comprises an oxide, wherein a fourth functional layer is formed as a second intermediate layer, and wherein the second intermediate layer comprises a nitride or an oxynitride.

Abstract: An optoelectronic semiconductor chip includes a number of active elements arranged at a distance from one another. A carrier is arranged transversely of the active elements. The active elements each have a main axis that extends perpendicularly to the carrier and are oriented parallel to one another. A converter material surrounds the active elements on circumferential faces. The converter material includes a conversion substance or a conversion substance and a matrix material. The active elements each have a central core region that is enclosed by at least two layers such that an active layer encloses the core region and a cover layer encloses the active layer. The core region is formed with a first semiconductor material. The active layer includes a light-emitting material. The cover layer is formed with a second semiconductor material and can have a layer thickness between 0.1 nm and 100 n.

Abstract: A conversion element includes a platelet including an inorganic glass, and first converter particles having a shell and a core, wherein the shell includes an inorganic material and the core includes a nitride or oxynitride luminescent material and the first converter particles are arranged on and/or in the platelet.

Abstract: An optoelectronic device and a method for producing an optoelectronic device are disclosed. The optoelectronic device includes an optoelectronic semiconductor chip and a conversion element arranged on the optoelectronic semiconductor chip. The conversion element includes a matrix material which includes a glass frit, a first phosphor, embedded in the glass frit, and cavities and a second phosphor arranged in the cavities of the matrix material.

Abstract: In various embodiments, a wavelength conversion element is provided. The wavelength conversion element includes a ceramic grid material, which forms a grid having a plurality of openings, which are surrounded by the grid material in a main extension plane of the grid and reach through the grid in a direction perpendicular to the main extension plane of the grid, wherein the openings are filled with conversion segments.

Abstract: The invention relates to an illuminant (23) and a socket (20) for a lamp (15). The features of the socket can be implemented also independently of the features of the illuminant (23). The socket has supply terminal areas on multiple sides of the socket housing such that the socket (20) can be selectively supplied with electricity and wired from different sides or also simultaneously from multiple sides. Independently of the number and the arrangement of the supply terminal areas (94), multiple electrical supply terminals (95) having the same polarity are provided on the socket (20). Said supply terminals (95) having the same polarity are electrically short-circuited by means of a shorting connector (116), in particular two identical shorting connectors (116) being arranged in the socket housing. Said socket (20) and illuminant (23) modularly achieve large total illumination surfaces in a lamp (15) and an appealing appearance in a very simple manner.

Abstract: A method of producing an optoelectronic semiconductor chip includes growing an optoelectronic semiconductor layer sequence on a growth substrate, forming an electrically insulating layer on a side of the optoelectronic semiconductor layer sequence facing away from the growth substrate by depositing particles of an electrically insulating material by an aerosol deposition method, and at least partly removing the growth substrate after forming the electrically insulating layer.

Abstract: Various embodiments may relate to an organic light-emitting device, including at least one functional layer for generating electroluminescent radiation, an encapsulation structure formed on or over the at least one functional layer, and a heat conduction layer formed on or over the encapsulation structure. The heat conduction layer includes a matrix material and heat conducting particles embedded in the matrix material.

Abstract: A method for producing an optoelectronic semiconductor chip is disclosed. A semiconductor body has a pixel area, which has at least two different subpixel areas. An electrically conductive layer is applied to the radiation outlet surface of at least one subpixel area. The electrically conductive layer is designed to at least partially salify with a protic reaction partner. A conversion layer is deposited onto the electrically conductive layer by means of a electrophoresis process.

Abstract: A radiation-emitting optoelectronic device is provided. The radiation-emitting optoelectronic device includes a semiconductor chip that, when the device is in operation, emits primary radiation of a wavelength of between 600 nm and 1000 nm. A conversion element includes a conversion material comprising ions of one or more metals selected from a group comprising La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Cr, Pb and Mg. The conversion material converts the primary radiation emitted by the semiconductor chip virtually completely into secondary radiation of a wavelength of between 1000 nm and 6000 nm.

Abstract: A light emitter with a radiation exit surface including a housing part with a receptacle, at least one organic optoelectronic device, arranged in the receptacle, and at least one cover part joined to the housing part, wherein the device is mounted between the cover part and the housing part.

Abstract: Various embodiments relates to an organic light-emitting device, including at least one functional layer for generating electroluminescent radiation, an encapsulation structure formed on or over the at least one functional layer, and a heat conduction layer formed on or over the encapsulation structure. The heat conduction layer includes a matrix material and heat conducting particles embedded in the matrix material.

Abstract: Disclosed is a method for producing a wavelength conversion element (10) wherein a wavelength conversion layer (100) is provided, the surface thereof is treated with a plasma (50), and the wavelength conversion layer is punched. Also disclosed are a wavelength conversion layer and an optoelectronic component comprising a wavelength conversion layer.

Abstract: An optoelectronic semiconductor chip includes a number of active elements arranged at a distance from one another. A carrier is arranged transversely of the active elements. The active elements each have a main axis that extends perpendicularly to the carrier and are oriented parallel to one another. A converter material surrounds the active elements on circumferential faces. The converter material includes a conversion substance or a conversion substance and a matrix material. The active elements each have a central core region that is enclosed by at least two layers such that an active layer encloses the core region and a cover layer encloses the active layer. The core region is formed with a first semiconductor material. The active layer includes a light-emitting material. The cover layer is formed with a second semiconductor material and can have a layer thickness between 0.1 nm and 100 n.