Abstract: An optoelectronic semiconductor component has a carrier and at least one semiconductor chip for emitting electromagnetic radiation. The semiconductor chip has two or more individually controllable elements. The semiconductor component additionally has a wavelength conversion element for at least partial conversion of the primary radiation emitted by the semiconductor chip into a secondary electromagnetic radiation. Each of the elements is suitable for generating primary radiation. The wavelength conversion element is structured into subregions. At least one individually controllable element of the semiconductor chip is associated with each subregion of the wavelength conversion element.

Abstract: An optoelectronic semiconductor component includes one or more light-emitting diode chips. The light-emitting diode chip has a main radiation side. A diaphragm is arranged downstream of the main radiation side along a main radiation direction of the light-emitting diode chip. The diaphragm is mounted on or in a component housing. The main radiation side has a mean edge length of at least 50 ?m. The diaphragm can be switched from light-impervious to light-pervious. The diaphragm comprises precisely one opening region for radiation transmission. The semiconductor component can be used as a flashlight for a mobile image recording device.

Abstract: In at least one embodiment, the method is designed for producing a light-emitting diode display (1). The method comprises the following steps: •A) providing a growth substrate (2); •B) applying a buffer layer (4) directly or indirectly onto a substrate surface (20); •C) producing a plurality of separate growth points (45) on or at the buffer layer (4); •D) producing individual radiation-active islands (5), originating from the growth points (45), wherein the islands (5) each comprise an inorganic semiconductor layer sequence (50) with at least one active zone (55) and have a mean diameter, when viewed from above onto the substrate surface (20), between 50 nm and 20 ?m inclusive; and •E) connecting the islands (5) to transistors (6) for electrically controlling the islands (5).

Abstract: A converter material includes a porous inorganic matrix material having a multiplicity of pores. A multiplicity of inorganic nanoparticles are applied on the surface of the matrix material. The nanoparticles are suitable for converting electromagnetic radiation in a first wavelength range into electromagnetic radiation in a second wavelength range. A method for producing such a converter material and an optoelectronic component that includes such a converter material are furthermore specified.

Abstract: A lighting device, in various embodiments, for generating a light emission, has a light source designed to generate light with a first dominant wavelength, a first converter designed to absorb the light generated by the light source and to emit light with a second dominant wavelength, which is longer than the first dominant wavelength, and a second converter designed to absorb a portion of the light emitted by the first converter and to emit light such that the light emission has a third dominant wavelength, which is longer than the second dominant wavelength.

Abstract: A method is specified for producing a light-emitting semiconductor component, in which method a light-emitting semiconductor layer sequence (2) with an active layer (3) that is designed to emit light during operation of the semiconductor component is provided, a wavelength conversion layer (4) containing at least one wavelength conversion material is applied on the semiconductor layer sequence (2), and a ceramic layer (5) is applied on the wavelength conversion layer (4) by means of an aerosol deposition process. A light-emitting semiconductor component is also specified.

Abstract: A light-emitting component may include: a first electrode; an organic electroluminescent layer structure on or over the first electrode; a second translucent electrode on or over the organic electroluminescent layer structure; and a mirror layer structure on or over the second electrode, wherein the mirror layer structure has a lateral thermal conductance of at least 1*10?3 W/K.

Abstract: An organic light emitting diode includes a substrate and an organic layer sequence, which generates electromagnetic radiation during operation. The organic layer sequence is arranged in a central region of the substrate A metallization is arranged in an edge region of the substrate and is designed for making electrical contact with the organic layer sequence. A separately produced metallic contact structure is cohesively and electrically conductively connected to the metallization by a joining process based on ultrasonic technology.

Abstract: A method of producing an optoelectronic semiconductor chip includes growing an optoelectronic semiconductor layer sequence on a growth substrate, forming an electrically insulating layer on a side of the optoelectronic semiconductor layer sequence facing away from the growth substrate by depositing particles of an electrically insulating material by an aerosol deposition method, and at least partly removing the growth substrate after forming the electrically insulating layer.

Abstract: Various embodiments relates to an organic light-emitting device, including at least one functional layer for generating electroluminescent radiation, an encapsulation structure formed on or over the at least one functional layer, and a heat conduction layer formed on or over the encapsulation structure. The heat conduction layer includes a matrix material and heat conducting particles embedded in the matrix material.

Abstract: A light emitter with a radiation exit surface including a housing part with a receptacle, at least one organic optoelectronic device, arranged in the receptacle, and at least one cover part joined to the housing part, wherein the device is mounted between the cover part and the housing part.

Abstract: A process is provided for producing a doped organic semiconductive layer, comprising the process steps of A) providing a matrix material, B) providing a dopant complex, and C) simultaneously applying the matrix material and the dopant complex to a substrate by vapor deposition, wherein, in process step C), the dopant complex is decomposed and the pure dopant is intercalated into the matrix material.

Abstract: An electrical organic component includes a first electrode, an organic functional layer on the first electrode and a second electrode on the organic functional layer. The first and/or second electrodes contain rhenium compounds.

Abstract: An optoelectronic semiconductor component includes one or more light-emitting diode chips. The light-emitting diode chip has a main radiation side. A diaphragm is arranged downstream of the main radiation side along a main radiation direction of the light-emitting diode chip. The diaphragm is mounted on or in a component housing. The main radiation side has a mean edge length of at least 50 ?m. The diaphragm can be switched from light-impervious to light-pervious. The diaphragm comprises precisely one opening region for radiation transmission. The semiconductor component can be used as a flashlight for a mobile image recording device.

Abstract: An organic light emitting diode includes a substrate and an organic layer sequence, which generates electromagnetic radiation during operation. The organic layer sequence is arranged in a central region of the substrate A metallization is arranged in an edge region of the substrate and is designed for making electrical contact with the organic layer sequence. A separately produced metallic contact structure is cohesively and electrically conductively connected to the metallization by a joining process based on ultrasonic technology.

Abstract: A light-emitting component may include: a first electrode; an organic electroluminescent layer structure on or over the first electrode; a second translucent electrode on or over the organic electroluminescent layer structure; and a mirror layer structure on or over the second electrode, wherein the mirror layer structure has a lateral thermal conductance of at least 1*10?3 W/K.

Abstract: The invention relates to an illuminant (23) and a socket (20) for a lamp (15). The features of the socket can be implemented also independently of the features of the illuminant (23). The socket has supply terminal areas on multiple sides of the socket housing such that the socket (20) can be selectively supplied with electricity and wired from different sides or also simultaneously from multiple sides. Independently of the number and the arrangement of the supply terminal areas (94), multiple electrical supply terminals (95) having the same polarity are provided on the socket (20). Said supply terminals (95) having the same polarity are electrically short-circuited by means of a shorting connector (116), in particular two identical shorting connectors (116) being arranged in the socket housing. Said socket (20) and illuminant (23) modularly achieve large total illumination surfaces in a lamp (15) and an appealing appearance in a very simple manner.

Abstract: The invention relates to an illuminant (23) and a socket (20) for a lamp (15). The features of the socket (20) can be implemented also independently of the features of the illuminant (23). The illuminant (23) has a preferably planar illumination surface (24). One or more semiconductor lighting elements are arranged within an illuminant housing (30). The illuminant connection device (70) required for mechanical and electrical connection to the socket (20) is provided on the rear face (66) of the illuminant (23), said rear face (66) lying opposite the illumination surface (24). The dimensions of the illuminant are preferably greater than the dimensions of the socket (10) such that the illuminant (23) fully covers the socket when looking onto the illumination surface (24), resulting in a particularly appealing look. Said socket and illuminant (23) modularly achieve large total illumination surfaces in a lamp (15) and an appealing overall appearance in a very simple manner.

Abstract: An electric organic component and a method for the production thereof is disclosed. The component includes a substrate, a first electrode, a first electrically semiconductive layer on the first electrode, an organic functional layer on the first electrically semiconductive layer and a second electrode on the organic functional layer. The first or the second electrode may be arranged on the substrate. The electrically semiconductive layer is doped with a dopant which comprises rhenium compounds.

Abstract: A process is provided for producing a doped organic semiconductive layer, comprising the process steps of A) providing a matrix material, B) providing a dopant complex, and C) simultaneously applying the matrix material and the dopant complex to a substrate by vapor deposition, wherein, in process step C), the dopant complex is decomposed and the pure dopant is intercalated into the matrix material.