Abstract: The administration of gaseous nitric oxide as a biocidal moiety is proffered as a de novo treatment in the control and eradication of biofilms. The present invention relates to the use or methods of application of exogenous nitric oxide gas (gNO) as a stand alone biocidal agent or in cohort with any or all adjunct vehicles in the control of biofilms generated by microbial organisms, i.e., bacteria, protozoa, amoeba, fungi etc. Further, the present invention introduces the concept of utilization and methods of application of gaseous nitric oxide in control and eradication of biofilm forming microorganisms. Noteworthy areas of application are offered as examples. They include, and are not limited to, air and/or water heating/cooling distribution systems in facilities such as hospitals and laboratories, surfaces of medical devices, household surfaces, dental plaque, dental and/or medical water treatment lines, industrial pipelines, water treatment and distribution facilities and fluids sterilization.

Abstract: DVD data is read from an optical disc. Double buffering is used for outer error correction syndromes, the syndrome for one ECC frame being accumulated in one syndrome buffer, while error correction calculations for preceding data block are performed using a syndrome accumulated previously in another syndrome buffer). The syndrome buffers are used in alternating fashion as further blocks of data are received, while the flow of data to a main buffer is uninterrupted. This reduces buffering requirements in the decoder, and relaxes time constraints on the error correction calculations. A multi-beam implementation is disclosed, providing higher throughput.

Abstract: This invention describes a new method for forming and depositing thin films of crystalline dielectric materials. The present technique uses chemical synthesis to control the granularity and thickness of the dielectric films. This method has several key advantages over existing technologies, and facilitates the integration of crystalline dielectric materials into high-density memory devices.

Abstract: This invention describes a new method for forming and depositing thin films of crystalline dielectric materials. The present technique uses chemical synthesis to control the granularity and thickness of the dielectric films. This method has several key advantages over existing technologies, and facilitates the integration of crystalline dielectric materials into high-density memory devices.

Abstract: This invention describes a new method for forming and depositing thin films of crystalline dielectric materials. The present technique uses chemical synthesis to control the granularity and thickness of the dielectric films. This method has several key advantages over existing technologies, and facilitates the integration of crystalline dielectric materials into high-density memory devices.

Abstract: The present invention relates to a novel organosilicon particle having the formula SiaObCcHd. The particle may be coated with an organic film, preferably a rigid connector compound. The present invention also provides a method of using the organosilicon particle and/or rigid connector compound in the formation of a low-k dielectric film.

Abstract: This invention describes a new method for forming and depositing thin films of crystalline dielectric materials. The present technique uses chemical synthesis to control the granularity and thickness of the dielectric films. This method has several key advantages over existing technologies, and facilitates the integration of crystalline dielectric materials into high-density memory devices.

Abstract: The present invention relates to a novel organosilicon particle having the formula SiaObCcHd. The particle may be coated with an organic film, preferably a rigid connector compound. The present invention also provides a method of using the organosilicon particle and/or rigid connector compound in the formation of a low-k dielectric film.

Abstract: The present invention relates to a novel organosilicon particle having the formula SiaObCcHd. The particle may be coated with an organic film, preferably a rigid connector compound. The present invention also provides a method of using the organosilicon particle and/or rigid connector compound in the formation of a low-k dielectric film.

Abstract: The present invention relates to a novel organosilicon particle having the formula SiaObCcHd. The particle may be coated with an organic film, preferably a rigid connector compound. The present invention also provides a method of using the organosilicon particle and/or rigid connector compound in the formation of a low-k dielectric film.

Abstract: The present invention relates to a novel organosilicon particle having the formula SiaObCcHd. The particle may be coated with an organic film, preferably a rigid connector compound. The present invention also provides a method of using the organosilicon particle and/or rigid connector compound in the formation of a low-k dielectric film.

Abstract: DVD data is read from an optical disc. Double buffering (230A/230B) is used for outer error correction syndromes, the syndrome for one ECC frame being accumulated in one syndrome buffer (230A), while error correction calculations for preceding data block are performed using a syndrome accumulated previously in another syndrome buffer (230B). The syndrome buffers are used in alternating fashion as further blocks of data are received, while the flow of data to a main buffer (208) is uninterrupted. This reduces buffering requirements in the decoder, and relaxes time constraints on the error correction calculations. A multi-beam implementation is disclosed, providing higher throughput.

Abstract: A method and structure for forming magnetic alloy nanoparticles includes forming a metal salt solution with a reducing agent and stabilizing ligands, introducing an organometallic compound into the metal salt solution to form a mixture, heating the mixture to a temperature between 260° and 300° C., and adding a flocculent to cause the magnetic alloy nanoparticles to precipitate out of the mixture without permanent agglomeration. The deposition of the alkane dispersion of FePt alloy particles, followed by the annealing results in the formation of a shiny FePt nanocrystalline thin film with coercivity ranging from 500 Oe to 6500 Oe.

Abstract: A method and structure for forming magnetic alloy nanoparticles includes forming a metal salt solution with a reducing agent and stabilizing ligands, introducing an organometallic compound into the metal salt solution to form a mixture, heating the mixture to a temperature between 260° and 300° C., and adding a flocculent to cause the magnetic alloy nanoparticles to precipitate out of the mixture without permanent agglomeration. The deposition of the alkane dispersion of FePt alloy particles, followed by the annealing results in the formation of a shiny FePt nanocrystalline thin film with coercivity ranging from 500 Oe to 6500 Oe.

Abstract: A method of forming nanoparticles includes steps of forming a metal precursor solution from a transition metal, injecting the metal precursor solution to the surfactant solution, adding a flocculent to cause nanoparticles to precipitate out of solution without permanent agglomeration, and adding a hydrocarbon solvent to redisperse or repeptize the nanoparticles.

Abstract: A method and structure for forming magnetic alloy nanoparticles includes forming a metal salt solution with a reducing agent and stabilizing ligands, introducing an organometallic compound into the metal salt solution to form a mixture, heating the mixture to a temperature between 260° and 300° C., and adding a flocculent to cause the magnetic alloy nanoparticles to precipitate out of the mixture without permanent agglomeration. The deposition of the alkane dispersion of FePt alloy particles, followed by the annealing results in the formation of a shiny FePt nanocrystalline thin film with coercivity ranging from 500 Oe to 6500 Oe.

Abstract: A hollow monofilament of a high temperature spinnable thermoplastic such as Polyetheretherketone (PEEK) which is substantially hollow by up to about 80% by volume and has an outer diameter in the range from about 0.07 to 0.80 mm. is used in the construction of braiding in substitution for solid monofilaments with the advantage of lower cost and increased abrasion resistance.

Abstract: There is disclosed a method to inhibit the corrosion of metals by sodium chloride and calcium chloride solutions by incorporating in the solutions a mixture of mono- and di-hydrogen orthophosphates. Sodium chloride solutions which contain calcium chloride, e.g., rock salt solutions, are inhibited against corrosion when the percentage of dihydrogen orthophosphate is from 10 to 60 percent of the mixture of di- and mono-hydrogen orthophosphates. Calcium chloride solutions are inhibited against corrosion when the percentage of dihydrogen orthophosphate is from 50 to 100 percent of the mixture of di- and mono-hydrogen orthophosphates.

Abstract: An inhibitor composition of sodium hexametaphosphate and a water soluble orthophosphate, together with a pH adjusting, water-soluble alkali, effectively prevents corrosion of metal surfaces by sodium chloride brines. This corrosion inhibitor can be used to prevent corrosion of motor vehicles and steel reinforcing members and structures by brines formed by roadway deicing salt.