Abstract: A method of manufacturing an integrated circuit device includes forming a laminated structure having a first side and a second side, the first side includes a first type Mott channel layer and the second side includes a second type Mott channel layer. A first source region and a first drain region is formed on the first side, a second source region and a second drain region is formed on the second side, a first gate region is formed on the second side, opposite the first source region and the first drain region and a second gate region is formed on the first side, opposite the second source region and the second drain region. The first source, the first drain and the first gate comprise a first type field effect transistor and the second source, the second drain and the second gate comprise a second type field effect transistor.

Abstract: A structure and method of forming an integrated circuit (e.g., field effect transistor) having a buried Mott-insulated oxide channel includes depositing source and drain electrodes over a substrate forming a Mott transition channel layer over the substrate and electrodes, forming an insulator layer over the Mott transition channel layer, forming source and drain contacts through the insulator layer (such that the source and drain contacts are electrically connected to the Mott transition channel layer) and forming a gate electrode over the insulator layer between the source and drain contacts.

Abstract: A structure and method of forming an integrated circuit (e.g., field effect transistor) having a buried Mott-insulated oxide channel includes depositing source and drain electrodes over a substrate forming a Mott transition channel layer over the substrate and electrodes, forming an insulator layer over the Mott transition channel layer, forming source and drain contacts through the insulator layer (such that the source and drain contacts are electrically connected to the Mott transition channel layer) and forming a gate electrode over the insulator layer between the source and drain contacts.

Abstract: Provided are a method and system for locating data stored within an environment having multiple interconnected computing systems. The method and system achieve their objects via the following actions. A superset of one or more elements comprised of data location identifiers and associated data attributes is created. A list of data attributes is received. In response to said received list of data attributes, any data location identifiers, within said created superset, which have the data attributes in the list, are transmitted. In one embodiment, the superset elements consist of object identifiers paired with the computing system wherein the objects associated with the object identifiers are located, the list of data attributes contains a list of object attributes, and the data location identifiers transmitted consist of an object identifier paired with a computing location.

Abstract: A multi-function stalk switch that incorporates a pushbutton switch, a first rotary switch and a second rotary switch onto the end of a stalk, wherein further switching functions may be executed by moving the entire stalk in either of two orthogonal planes. The stalk switch incorporates many design features that enable it to be assembled at low cost from a small number of parts. One such feature is the use of plastic-on-plastic detents to control positioning of the rotary switches so that they wipe across predetermined portions of a flexible printed circuit board. Another feature is the inclusion of a spring-loaded plunger detent riding in a concave centering mechanism that is operable to automatically return the stalk switch to its central (neutral) position after removal of external biasing forces. A further feature is the inclusion of magnets on the stalk switch and Hall effect sensors fixedly mounted nearby in order to sense movement of the magnets (and therefore the stalk) in two orthogonal planes.

Abstract: A request for determining a unique object identifier for an object located somewhere within a plurality of data processing systems in a network may be received from an application by a single data processing in the network. A local object index containing object attribute records is searched for matches with specified input criteria and any matches are identified. A local search list is then consulted and, if other object indexes require searching, the request is forwarded to the next object index on the list together with an indication of the object index or indexes already searched. The inclusion of an indication of indexes already searched prevents a loop-back condition from occurring. As each object index is searched, the search list is consulted and, if additional object indexes remain to be searched, the request is propagated to the next object index and the results of searching a local object index are returned to an originating data processing system.

Abstract: A first embodiment of a micromesh laminate includes a micromesh fabric first layer, a form-providing second layer laminated to the micromesh fabric, and preferably a woven or knit fabric third layer laminated or stitched to the second layer. The micromesh fabric is typically a knit fabric made of polyester or nylon and has small holes, on the order of approximately 0.5 mm by 0.5 mm to 3 mm by 3 mm, knit into the fabric. Preferably, the second layer is either a high or low density polyurethane foam, neoprene foam, or film, and the third layer is made from cotton, nylon, polyester, acrylic, or spandex. The layers are preferably bonded together with an adhesive which can withstand high washability, e.g., a crosslinked urethane adhesive; alternatively, the second layer and third layer may be flame laminated or stitched together. A second embodiment of a micromesh laminate includes a micromesh first layer, and a woven or knit fabric second layer laminated to the first layer.

Abstract: A less hazardous, reusable and durable wire connector which is designed to connect a plurality of stranded wires without stripping or twisting the ends of the stranded wires. The connector is formed with a plastic base housing and a pliable flapped sheath which will tighten on the wires by a releasable closure restraint. Within the base housing, a pinfield conductive element is provided to connect the stranded wires together.

Abstract: A method and apparatus for pivotably mounting a wheelchair to a platform includes a pivot assembly pivotally connected onto the platform, the assembly including a connecting mechanism releasably interconnecting a portion of the wheelchair with a platform wherein the connecting mechanism includes a universal joint yoke, a quick release universal joint coupler and a quick release pin interconnecting the yoke with the coupler wherein the yoke is connectable to the connecting mechanism and the coupler is connectable to the portion of the wheelchair. The portion of the wheelchair which cooperates with the coupler may be either a frame portion thereof or an axle of the wheelchair or vice-versa. The quick release pin permits easy connecting or disconnecting of the wheelchair to the pivot assembly and the pivot assembly allows for a 360.degree. freedom of motion of the wheelchair about the pedestal of the pivot assembly.

Abstract: A completely solid state rotary beacon which produces a rotary beacon lighting effect without the use of mechanical components or rotating parts. The device of the present invention includes a plurality of light sources which are equicircumferentially spaced around the outer perimeter of the rotary beacon. These light sources are intermittently illuminated by an electronic controller in such a fashion that the illusion of a rotating light beacon is produced without the need for rotating mechanical components. The lighting sequence, in conjunction with the unique parabolic reflector arrangement of the present invention, create the illusion of a light source being rotated in a 360.degree. path. This effect is achieved by the present invention without the use of rotating mechanical components.

Abstract: A method is described for fabricating electroluminescent devices exhibiting visible electroluminescence at room temperature, where the devices include at least one doped layer of amorphous hydrogenated silicon (a-Si:H). The a-Si:H layer is deposited on a substrate by homogeneous chemical vapor deposition (H-CVD) in which the substrate is held at a temperature lower than about 200.degree. C. and the a-Si:H layer is doped in-situ during deposition, the amount of hydrogen incorporated in the deposited layer being 12-50 atomic percent. The bandgap of the a-Si:H layer is between 1.6 and 2.6 eV, and in preferrable embodiments is between 2.0 and 2.6 eV. The conductivity of the a-Si:H layer is chosen in accordance with device requirements, and can be 10.sup.16 -10.sup.19 carriers/cm.sup.2. The bandgap of the a-Si:H layer depends at least in part on the temperature of the substrate on which the layer is deposited, and can be "tuned" by changing the substrate temperature.

Abstract: A process for preparing tungsten silicide films using low pressure, low temperature chemical vapor deposition to deposit silicon-rich tungsten silicide films. As a source of silicon, higher order silanes, such as disilane and trisilane, are used. The gaseous tungsten source is WF.sub.6. The substrate temperature range is less than about 370.degree. C., while the total pressure range is in the range 0.05-1 Torr. WF.sub.6 flow rates are generally less than 25 sccm, while the higher order silane flow rates are generally less than about 400 sccm.

Abstract: A technique and apparatus for homogeneous chemical vapor deposition (HCVD), wherein a heated carrier gas is mixed with a source gas in a location close to a substrate on which deposition is to occur. The heated carrier gas transfers heat to the source gas in order to decompose it, producing the intermediate species necessary for deposition onto the substrate. Thus, the source gas is not subjected to heating above its pyrolysis temperature prior to being transported to the immediate vicinity of the substrate. This HCVD apparatus includes a heat source for heating the carrier gas, a tube for bringing the heated carrier gas to a location close to the substrate, and another tube for bringing the reactive source gas to the aforementioned location where it is mixed with the hot carrier gas to cause decomposition of the source gas close to the substrate. The substrate temperature is decoupled from the hot gas temperature and is significantly colder than the hot gas temperature.

Abstract: Disilane (Si.sub.2 H.sub.6), trisilane (Si.sub.3 H.sub.8) or a higher order silane is applied in a glow discharge process to rapidly and efficiently form a film of hydrogenated amorphous silicon on a substrate. An inductively coupled RF glow discharge apparatus, a capacitively coupled glow discharge apparatus or a DC glow discharge apparatus may be employed to deposit the amorphous silicon on a conducting or non-conducting substrate. The disilane or higher order silanes may also be combined in a glow discharge process with gases which contain elements such as nitrogen or oxygen to rapidly deposit corresponding compound films.

Abstract: The invention relates to high resolution video storage disks comprising a substrate having disposed thereon a film of a monofunctionalized substituted tetraheterofulvalene compound and a halocarbon. The tetraheterofulvalene compound can have the molecular formula ##STR1## where X can be S and/or Se R can be an alkyl group having from about 1 to about 8 carbon atoms or a benzyl group wherein said benzyl group can be a part of a polymer chain;and Y can be either an ester or an ether.