Abstract: Photomask manufacture is improved by adding assist bars 320, 340 for isolated features 300. The bars 320, 340 are added at a center to center spacing that corresponds to the center to center spacing for densely packed features. By matching the assist bars to the densely packed features, the combined diffraction pattern of the isolated features is modified to more closely resemble the diffraction pattern of the densely packed features.

Abstract: An attenuated phase shift mask for use in a lithography process includes a masking film made of at least one material with at least a silicon component which provides a transmission above about 0.5 percent and a phase shift of about a 180° for radiation at a wavelength at or below about 160 nm.

Abstract: A masking aperture for a photomask illumination system provides controlled on-axis and off-axis illumination. The masking aperture has a dithered pattern of pixels. The intensity of the pattern controls the illumination of the photomask. The masking aperture pattern defines one or more zones of illumination. Zones comprise elements that are patterned in accordance with a selected wavelength of incident light to diffract the incident light into an illumination pattern for illuminating a photomask. Each of the elements is constructed with a matrix of pixels. In the preferred embodiment the array of pixels is 8×8. The number of elements is generally greater than 3×3.

Abstract: Aberrations in an optical system can be detected and measured using a method comprised of a test target in the object plane of a projection system and imaging a photoresist film with the system. The test target comprises at least one open figure which comprises a multiple component array of phase zones, where the multiple zones are arranged within the open figure so that their response to lens aberration is interrelated and the zones respond uniquely to specific aberrations depending on their location within the figure. This is a unique and new method of detecting a variety of aberration types including coma, spherical, astigmatism, and three-point through the exposure of a photoresist material placed in the image plane of the system and the evaluation of these images.

Abstract: A masking aperture for a photomask illumination system provides controlled on-axis and off-axis illumination. The masking aperture has a dithered pattern of pixels. The intensity of the pattern controls the illumination of the photomask. The masking aperture pattern defines one or more zones of illumination. Zones comprise elements that are patterned in accordance with a selected wavelength of incident light to diffract the incident light into an illumination pattern for illuminating a photomask. Each of the elements is constructed with a matrix of pixels. In the preferred embodiment the array of pixels is 8×8. The number of elements is generally greater than 3×3.

Abstract: A microlithograpic tool, such as a projection stepper, for manufacturing integrated circuits, shapes light that illuminates a photomask with a chevron illumination system. The system uses either a chevron aperture mask of diffractive optical elements to shape a light source into four chevrons (110b, 120b, 130b, 140b). The chevrons are located in the corners of the circular pupil of the condenser lens. The chevrons may be a small a square poles at the corners or as large as an annular square ring. The chevrons provide superior performance for illuminating conventional X and Y oriented features of a photomask.

Abstract: Photomask manufacture is improved by adding assist bars 320, 340 for isolated features 300. The bars 320, 340 are added at a center to center spacing that corresponds to the center to center spacing for densely packed features. By matching the assist bars to the densely packed features, the combined diffraction pattern of the isolated features is modified to more closely resemble the diffraction pattern of the densely packed features.

Abstract: An image enhancement apparatus and method are disclosed. The apparatus consists of a spatial frequency filter where zero order mask diffraction information is reduced in an alternative pupil plane of the objective lens, specifically just beyond the mask plane. By introducing an angular specific transmission filter into this Fraunhofer diffraction field of the mask, user accessibility is introduced, allowing for a practical approach to frequency filtering. This frequency filtering is accomplished using a specifically designed interference filter coated over a transparent substrate. Alternatively, filtering can also be accomplished in a complimentary region near the wafer image plane or in both near-mask and near-wafer planes.

Abstract: A imaging tool for use with a mask with features oriented along at least an x-axis or a y-axis where the x-axis extends in directions substantially perpendicular to the directions of the y-axis. The tool has a condenser lens with a condenser plate which is located in a condenser lens pupil plane and which has a condenser aperture with four-sides. The sides of the condenser aperture are oriented in substantially the same direction as either the x-axis or the y-axis. The condenser lens is positioned to place at least a portion of any illumination on at least a portion of the mask.

Abstract: An attenuated phase shift mask for use in a lithography process includes a masking film made of at least one material with at least a silicon component which provides a transmission above about 0.5 percent and a phase shift of about a 180° for radiation at a wavelength at or below about 160 nm.

Abstract: A imaging tool for use with a mask with features oriented along at least an x-axis or a y-axis where the x-axis extends in directions substantially perpendicular to the directions of the y-axis. The tool has a condenser lens and an objective lens. The condenser lens has a condenser aperture with four-sides and four comers that are located in a condenser lens pupil plane. The sides of the condenser aperture are oriented in substantially the same direction as either the x-axis or the y-axis. The condenser lens is positioned to place at least a portion of any illumination on the mask and then into an objective lens pupil plane of the objective lens. At least one of the comers of the condenser aperture in the condenser plate may have a substantially rounded shape. Additionally, the mask may have at least one artifact added to at least one comer of the features for optical proximity correction.

Abstract: An alignment apparatus (28) is provided for use with a supply column (16) including an outer shell (22), a mount (12) configured to couple the outer shell (22) to a ceiling (14), and a plurality of supply lines (24) positioned within the outer shell (22). The supply lines (24) are configured to be coupled to at least one of an electrical supply and a gas supply. The alignment apparatus (28) includes a body member (30) configured to be positioned on the outer shell (22) of the supply column (16), and a plurality of ports (34, 36) formed in the body member (30). The ports (34, 36) are configured to support the supply lines (24) in a predetermined pattern.

Abstract: An image enhancement apparatus and method are disclosed. The apparatus consists of a spatial frequency filter where zero order mask diffraction information is reduced in an alternative pupil plane of the objective lens, specifically just beyond the mask plane. By introducing an angular specific transmission filter into this Fraunhofer diffraction field of the mask, user accessibility is introduced, allowing for a practical approach to frequency filtering. This frequency filtering is accomplished using a specifically designed interference filter coated over a transparent substrate. Alternatively, filtering can also be accomplished in a complimentary region near the wafer image plane or in both near-mask and near-wafer planes.

Abstract: A photolithography mask for optically transferring a pattern formed in said mask onto a substrate and for negating optical proximity effects. The mask includes a plurality of resolvable features to be printed on the substrate, where each of the plurality of resolvable features has a longitudinal axis extending in a first direction; and a pair of non-resolvable optical proximity correction features disposed between two of the plurality of resolvable features, where the pair of non-resolvable optical proximity correction features has a longitudinal axis extending in a second direction, wherein the first direction of the longitudinal axis of the plurality of resolvable features is orthogonal to the second direction of the longitudinal axis of the pair of non-resolvable optical proximity correction features.

Abstract: A photolithography mask for optically transferring a pattern formed in the mask onto a substrate and for negating optical proximity effects. The mask includes a plurality of resolvable features to be printed on the substrate, and at least one non-resolvable optical proximity correction feature disposed between two of the resolvable features to be printed, where the non-resolvable optical proximity correction feature has a transmission coefficient in the range of greater than 0% to less than 100%.

Abstract: A photolithographic method and apparatus are disclosed. The apparatus uses a diffraction plate or traditional optical elements to control and shape the light from an illuminator into a Gaussian light intensity distribution for illuminating a phase shift photomask. The Gaussian distribution reduces asymmetrical aberrations of the objective lens that are exaggerated by the phase shift photomask.

Abstract: An illumination system for a microlithographic stepper has a light source that emits light of selected wavelength(s) along an optical path toward a photomask. An aperture mask is positioned in the path of the illumination light and between the light source and the photomask. The aperture mask has a dithered pattern of pixels. The intensity of the pattern controls the illumination of the photomask. The masking aperture pattern defines one or more zones of illumination. Each zone has elements that are patterned in accordance with a selected wavelength of incident light to diffract the incident light into an illumination pattern for illuminating a photomask. Each of the elements is constructed with a matrix of pixels. In the preferred embodiment the array of pixels is 8×8. The number of elements is generally greater than 3×3.

Abstract: A masking aperture for a photomask illumination system provides controlled on-axis and off-axis illumination. The masking aperture has a dithered pattern of pixels. The intensity of the pattern controls the illumination of the photomask. The masking aperture pattern defines one or more zones of illumination. Zones comprise elements that are patterned in accordance with a selected wavelength of incident light to diffract the incident light into an illumination pattern for illuminating a photomask. Each of the elements is constructed with a matrix of pixels. In the preferred embodiment the array of pixels is 8×8. The number of elements is generally greater than 3×3.

Abstract: A masking aperture for a photomask illumination system provides controlled on-axis and off-axis illumination. The masking aperture has a dithered pattern of pixels. The intensity of the pattern controls the illumination of the photomask. The masking aperture pattern defines one or more zones of illumination. Zones comprise elements that are patterned in accordance with a selected wavelength of incident light to diffract the incident light into an illumination pattern for illuminating a photomask. Each of the elements is constructed with a matrix of pixels. In the preferred embodiment the array of pixels is 8×8. The number of elements is generally greater than 3×3.

Abstract: An attenuated phase shift mask for use in a lithography process includes a masking film made of at least one material with at least a silicon component which provides a transmission above about 0.5 percent and a phase shift of about a 180° for radiation at a wavelength at or below about 160 nm.