Abstract: A projection lithography system provides a cross-quadrupole illumination pattern in combination with a translucent substrate having boundary relief features. The features are spaced close together so that they are not imaged in a focal plane, but generate a dark image of the space between the features in the focal plane.

Abstract: A mask for use on a layer of imaging material which is located on at least a portion of one surface of a substrate in a lithography process in accordance with one embodiment of the present invention includes a layer of a masking material which has an optical density of at least 4.0 for wavelengths at or below about 180 nm and a thickness of less than about 1000 angstroms. Materials, such as tungsten and amorphous silicon, can be used for the mask.

Abstract: The attenuated phase shift mask in accordance with one embodiment of the present invention for use in lithography at or below 0.20 &mgr;m and for use at wavelengths below 300 nm includes a substrate with a layer deposited on the substrate. The layer comprises a group IV, V or VI transitional metal nitride and silicon nitride SixNy. The attenuated phase shift mask has a thickness between about 500 angstroms and 2000 angstroms, where the group IV, V or VI transitional metal nitride comprises about ten to forty percent of the layer.

Abstract: The attenuated phase shift mask in accordance with one embodiment of the present invention for use in lithography at or below 0.20 .mu.m and for use at wavelengths below 300 nm includes a substrate, a first layer disposed on the substrate, and a second layer disposed on the first layer. The first layer is a group IV, V or VI transitional metal nitride and the second layer is Si.sub.x N.sub.y or the first layer is Si.sub.x N.sub.y and the second layer is a group IV, V or VI transitional metal nitride. The mask may include a third layer disposed on the second layer and a fourth layer disposed on the second layer. The third layer is a group IV, V or VI transitional metal nitride if the second layer is Si.sub.x N.sub.y and is Si.sub.x N.sub.y if the second layer is a group IV, V or VI transitional metal. The fourth layer is a group IV, V or VI transitional metal nitride if the third layer is Si.sub.x N.sub.y and is Si.sub.x N.sub.y if the third layer is a group IV, V or VI transitional metal.

Abstract: A drill is disclosed having a shroud structure extending about a chuck and drill bit at the forward end of the tool, to receive cuttings produced by the bit, and having a receptacle preferably carried at the rear end of the drill and to which the cuttings are withdrawn by a flow of air. In one form of the invention, the air movement is induced by aspirator action, while in another form a rotary air pump driven by the motor of the drill creates the suction effect. The receptacle may take the form of a cup detachably connectible to the body of the drill, and in the aspirator form of the invention the aspirating passages may be formed in an end wall of this cup. The shroud structure may include a sleeve disposed about the drill bit, and having a lug projecting inwardly to a position to contact and break up cuttings formed by the bit before they are withdrawn to the accumulation receptacle.

Abstract: A novel stiffened structural laminate formed by contacting at least one layer of a curable resin-impregnated fabric with at least one strip of cellular honeycomb core, disposing another piece of said curable resin-impregnated fabric over said strip of core, and curing said resin under laminating conditions to bond said honeycomb core to said fabric and produce a unitary laminate which includes said strip as a stiffening bead.