Abstract: A process for producing a monocrystalline layer of GaAs material comprises the transfer of a monocrystalline seed layer of SrTiO3 material to a carrier substrate of silicon material followed by epitaxial growth of a monocrystalline layer of GaAs material.

Abstract: A method for manufacturing a device comprising a membrane extending over a useful cavity, the method comprising: providing a generic structure comprising a surface layer extending in a main plane and arranged on a first face of a support substrate, the support substrate comprising elementary cavities opening under the surface layer and partitions delimiting each elementary cavity, the partitions having top surfaces that form all or part of the first face of the support substrate; defining a group of adjacent elementary cavities, such that a contour of the group of elementary cavities corresponds, in the main plane, to a contour of the useful cavity; and removing the partitions situated within the contour of the group of elementary cavities, in order to form the useful cavity, and to free the surface layer arranged above the useful cavity and forming the membrane.

Abstract: A microsensor for detecting ions in a fluid, comprises: a field-effect transistor having a source, a drain, an active region between the source and the drain, and a gate disposed above the active region, an active layer, in which the active region is formed, a dielectric layer positioned beneath the active layer, a support substrate disposed under the dielectric layer and comprising at least one buried cavity located plumb with the gate of the field-effect transistor in order to receive the fluid.

Abstract: A process for producing a monocrystalline layer of diamond or iridium material comprises transferring a monocrystalline seed layer of SrTiO3 material onto a carrier substrate of silicon material, followed by epitaxial growth of the monocrystalline layer of diamond or iridium material.

Abstract: A process for manufacturing a two-dimensional film of a group IV material having a hexagonal crystalline structure, in particular, graphene, comprises formation of a growth substrate, comprising the transfer of a single-crystal metal film suitable for the growth of the two-dimensional film on a support substrate, and epitaxial growth of the two-dimensional film on the metal film of the substrate.

Abstract: A process for producing a monocrystalline layer of LNO material comprises the transfer of a monocrystalline seed layer of YSZ material to a carrier substrate of silicon material followed by epitaxial growth of the monocrystalline layer of LNO material.

Abstract: A process for producing a crystalline layer of PZT material, comprising the transfer of a monocrystalline seed layer of SrTiO3 material to a carrier substrate of silicon material, followed by epitaxial growth of the crystalline layer of PZT material.

Abstract: A method for manufacturing a structure comprising membranes overhanging cavities, comprises: a) forming cavities opening at a front face of a support substrate, the cavities having a depth and an area, and being spaced apart by a spacing; b) assembling, by way of direct bonding, a donor substrate on the support substrate to seal the cavities under vacuum, the direct bonding being hydrophilic and involving a given number of water monolayers at a contact interface between the substrates; and c) transferring a thin layer from the donor substrate onto the support substrate, the thin layer comprising the membranes. A specific area is defined around each cavity in the plane of the contact interface and is expressed as a function of half of the spacing. The area, the depth of each cavity, and the specific area are defined in step a) to satisfy a particular relationship.

Abstract: A process for producing a crystalline layer of PZT material, comprising the transfer of a monocrystalline seed layer of SrTiO3 material to a carrier substrate of silicon material, followed by epitaxial growth of the crystalline layer of PZT material.

Abstract: A process for manufacturing a two-dimensional film of a group IV material having a hexagonal crystalline structure, in particular, graphene, comprises formation of a growth substrate, comprising the transfer of a single-crystal metal film suitable for the growth of the two-dimensional film on a support substrate, and epitaxial growth of the two-dimensional film on the metal film of the substrate.

Abstract: A method for producing a device comprising a membrane of piezoelectric nature above at least one cavity comprises: a) providing a carrier substrate having a cavity opening out onto its front face, the cavity having a lateral dimension larger than 30 ?m; b) providing a donor substrate having a buried weakened plane delimiting a surface layer; c) depositing, on the front face of the donor substrate, a stiffening layer made of piezoelectric material having a thickness greater than 500 nanometers; d) joining the carrier substrate and donor substrate; and e) splitting the donor substrate at the buried weakened plane so as to transfer the membrane comprising the surface layer and the stiffening layer to the carrier substrate.

Abstract: A process for transferring blocks from a donor to a receiver substrate, comprises: arranging a mask facing a free surface of the donor substrate, the mask having one or more openings that expose the free surface of the donor substrate, the openings distributed according to a given pattern; forming, by ion implantation through the mask, an embrittlement plane in the donor substrate vertically in line with at least one region exposed through the mask, the embrittlement plane delimiting a respective surface region; forming a block that is raised relative to the free surface of the donor substrate localized vertically in line with each respective embrittlement plane, the block comprising the respective surface region; bonding the donor substrate to the receiver substrate via each block located at the bonding interface, after removing the mask; and detaching the donor substrate along the localized embrittlement planes to transfer blocks onto the receiver substrate.

Abstract: A process for producing a monocrystalline layer of LNO material comprises the transfer of a monocrystalline seed layer of YSZ material to a carrier substrate of silicon material followed by epitaxial growth of the monocrystalline layer of LNO material.

Abstract: A composite structure comprises a receiver substrate having at least one cavity defined in the substrate and devoid of solid material or filled with a sacrificial solid material, a single-crystal semiconductor layer disposed on the receiver substrate, the layer having a free surface over the entire extent of the structure and a thickness between 0.1 micron and 100 microns, and a piezoelectric layer secured to the single-crystal semiconductor layer and located between the single-crystal semiconductor layer and the receiver substrate. A device is based on a movable membrane above a cavity, and is formed from the composite structure. A method is used to fabricate the composite structure.

Abstract: A process for transferring blocks from a donor to a receiver substrate, comprises: arranging a mask facing a free surface of the donor substrate, the mask having one or more openings that expose the free surface of the donor substrate, the openings distributed according to a given pattern; forming, by ion implantation through the mask, an embrittlement plane in the donor substrate vertically in line with at least one region exposed through the mask, the embrittlement plane delimiting a respective surface region; forming a block that is raised relative to the free surface of the donor substrate localized vertically in line with each respective embrittlement plane, the block comprising the respective surface region; bonding the donor substrate to the receiver substrate via each block located at the bonding interface, after removing the mask; and detaching the donor substrate along the localized embrittlement planes to transfer blocks onto the receiver substrate.

Abstract: A design process is used for designing a device comprising a plurality of micro-machined elements, each comprising a flexible membrane, the elements being arranged in a plane in a determined topology. The design process comprises a step of defining the determined topology so that it has a character compatible with a generic substrate having cavities, the characteristics of which are pre-established. Each flexible membrane of the micro-machined elements is associated with one cavity of the generic substrate. The present disclosure also relates to a fabrication process for fabricating a device comprising a plurality of micro-machined elements, and to this device itself, wherein only some of the pairs of cavities and flexible membranes are configured to form a set of functional micro-machined elements.

Abstract: A method for producing a layer of composition AA?BO3, wherein A consists of at least one element selected from the group consisting of: Li, Na, K, Ca, Mg, Ba, Sr, Pb, La, Bi, Y, Dy, Gd, Tb, Ce, Pr, Nd, Sm, Eu, Ho, Zr, Sc, Ag and Tl, and B consists of at least one element selected from the group consisting of: Nb, Ta, Sb, Ti, Zr, Sn, Ru, Fe, V, Sc, C, Ga, Al, Si, Mn, Zr and Tl, is described. The method includes providing a donor substrate of composition ABO3, forming a layer of composition ABO3 by thinning the donor substrate, and exposing the layer of composition ABO3 to a medium containing ions of an element A? belonging to the same list of elements as A, A? being different from A, such that the ions penetrate into the layer of composition ABO3 to form the layer of composition AA?BO3.

Abstract: A method for manufacturing a thermo-optic component comprises the following steps: a) providing a silicon-on-insulator (SOI) substrate comprising: a surface layer made of single-crystal silicon, extending in a main plane and placed on a dielectric layer, itself placed on a carrier made of silicon, and at least one buried cavity, which is formed in the carrier and which opens under the dielectric layer, b) forming an optical waveguide extending in the main plane and comprising a core formed in the surface layer and encircled by an optical confinement layer including the dielectric layer, c) producing at least one heating element, on the optical waveguide, the heating element being positioned, in the main plane, plumb with a segment of the optical waveguide, or on either side of the segment, the heating element and the segment of the optical waveguide being located plumb with the at least one recessed buried cavity.

Abstract: A design process is used for designing a device comprising a plurality of micro-machined elements, each comprising a flexible membrane, the elements being arranged in a plane in a determined topology. The design process comprises a step of defining the determined topology so that it has a character compatible with a generic substrate having cavities, the characteristics of which are pre-established. Each flexible membrane of the micro-machined elements is associated with one cavity of the generic substrate. The present disclosure also relates to a fabrication process for fabricating a device comprising a plurality of micro-machined elements, and to this device itself, wherein only some of the pairs of cavities and flexible membranes are configured to form a set of functional micro-machined elements.

Abstract: A composite substrate includes a final substrate, and a piezoelectric material directly molecularly bonded to the final substrate at a first interface. The piezoelectric material comprises an epitaxial layer, but does not comprise a seed layer. Additional composite substrates include a final substrate, and a piezoelectric material directly molecularly bonded to the final substrate at a first interface. The piezoelectric material comprises an epitaxial layer. The composite substrate further includes a seed layer on which the piezoelectric material has been epitaxially grown. The seed layer is disposed on a side of the epitaxial layer opposite the final substrate. An acoustic wave device comprises such a composite substrate with at least one electrode on a surface of the piezoelectric layer opposite the substrate.