Patents by Inventor Bruno Ghyselen

Bruno Ghyselen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11557715
    Abstract: A method for manufacturing a film, notably monocrystalline, on a flexible sheet, comprises the following steps: providing a donor substrate, forming an embrittlement zone in the donor substrate so as to delimit the film, forming the flexible sheet by deposition over the surface of the film, and detaching the donor substrate along the embrittlement zone so as to transfer the film onto the flexible sheet.
    Type: Grant
    Filed: October 31, 2018
    Date of Patent: January 17, 2023
    Assignee: Soitec
    Inventors: Bruno Ghyselen, Jean-Marc Bethoux
  • Patent number: 11549195
    Abstract: A process for producing a monocrystalline layer of GaAs material comprises the transfer of a monocrystalline seed layer of SrTiO3 material to a carrier substrate of silicon material followed by epitaxial growth of a monocrystalline layer of GaAs material.
    Type: Grant
    Filed: March 26, 2019
    Date of Patent: January 10, 2023
    Assignee: Soitec
    Inventor: Bruno Ghyselen
  • Publication number: 20220364266
    Abstract: A process for producing a monocrystalline layer of GaAs material comprises the transfer of a monocrystalline seed layer of SrTiO3 material to a carrier substrate of silicon material followed by epitaxial growth of a monocrystalline layer of GaAs material.
    Type: Application
    Filed: August 1, 2022
    Publication date: November 17, 2022
    Inventor: Bruno Ghyselen
  • Publication number: 20220298007
    Abstract: A method for sealing cavities using membranes, the method including a) forming cavities arranged in a matrix, of a depth p, a characteristic dimension a, and spaced apart by a spacing b; and b) forming membranes, sealing the cavities, by transferring a sealing film. The method further includes a step a1), executed before step b), of forming a first contour on the front face and/or on the sealing face, the first contour comprising a first trench having a width L and a first depth p1, the formation of the first contour being executed such that after step b) the cavities are circumscribed by the first contour, said first contour being at a distance G from the cavities between one-fifth of b and five b.
    Type: Application
    Filed: August 18, 2020
    Publication date: September 22, 2022
    Applicants: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, SOITEC
    Inventors: Thierry SALVETAT, Bruno GHYSELEN, Lamine BENAISSA, Caroline COUTIER, Gweltaz GAUDIN
  • Publication number: 20220301923
    Abstract: A method for manufacturing a film on a support having a non-flat surface comprises: providing a donor substrate having a non-flat surface, forming an embrittlement zone in the donor substrate so as to delimit the film to be transferred, forming the support by deposition on the non-flat surface of the film to be transferred, and detaching the donor substrate along the embrittlement zone so as to transfer the film onto the support.
    Type: Application
    Filed: June 6, 2022
    Publication date: September 22, 2022
    Inventors: Bruno Ghyselen, Jean-Marc Bethoux
  • Patent number: 11398595
    Abstract: A method for treating a layer of composition ABO3, wherein A is a first material composition consisting of at least one element selected from the group consisting of: Li, Na, K, H, Ca, Mg, Ba, Sr, Pb, La, Bi, Y, Dy, Gd, Tb, Ce, Pr, Nd, Sm, Eu, Ho, Zr, Sc, Ag, and Tl, and wherein B is a second material composition consisting of at least one element selected from the group consisting of: Nb, Ta, Sb, Ti, Zr, Sn, Ru, Fe, V, Sc, C, Ga, Al, Si, Mn, Zr, and Tl, is described. The method includes implanting an ionic species into a donor substrate of the composition ABO3, thereby forming a weakened zone delineating the layer, detaching the layer from the donor substrate along the weakened zone, and exposing the detached layer to a medium containing ions of a constituent element A, such that the ions penetrate into the layer.
    Type: Grant
    Filed: May 24, 2017
    Date of Patent: July 26, 2022
    Assignee: SOITEC
    Inventor: Bruno Ghyselen
  • Patent number: 11373897
    Abstract: A method for manufacturing a film on a support having a non-flat surface comprises: providing a donor substrate having a non-flat surface, forming an embrittlement zone in the donor substrate so as to delimit the film to be transferred, forming the support by deposition on the non-flat surface of the film to be transferred, and detaching the donor substrate along the embrittlement zone, so as to transfer the film onto the support.
    Type: Grant
    Filed: October 31, 2018
    Date of Patent: June 28, 2022
    Assignee: Soitec
    Inventors: Bruno Ghyselen, Jean-Marc Bethoux
  • Publication number: 20220148911
    Abstract: A process for transferring blocks from a donor to a receiver substrate, comprises: arranging a mask facing a free surface of the donor substrate, the mask having one or more openings that expose the free surface of the donor substrate, the openings distributed according to a given pattern; forming, by ion implantation through the mask, an embrittlement plane in the donor substrate vertically in line with at least one region exposed through the mask, the embrittlement plane delimiting a respective surface region; forming a block that is raised relative to the free surface of the donor substrate localized vertically in line with each respective embrittlement plane, the block comprising the respective surface region; bonding the donor substrate to the receiver substrate via each block located at the bonding interface, after removing the mask; and detaching the donor substrate along the localized embrittlement planes to transfer blocks onto the receiver substrate.
    Type: Application
    Filed: March 25, 2020
    Publication date: May 12, 2022
    Inventors: Didier Landru, Bruno Ghyselen
  • Publication number: 20220073343
    Abstract: A method for transferring a superficial layer to a carrier substrate having cavities comprises: —providing a donor substrate, —providing the carrier substrate having a first face and comprising cavities, each cavity opening at the first face and having a bottom and peripheral walls, —creating at least one temporary pillar in at least one of the cavities, the pillar having an upper surface that is coplanar with the first face of the carrier substrate, joining the donor substrate and the carrier substrate at the first face of the carrier substrate, —thinning the donor substrate to form the superficial layer, and removing the at least one temporary pillar.
    Type: Application
    Filed: December 12, 2019
    Publication date: March 10, 2022
    Inventor: Bruno Ghyselen
  • Patent number: 11239108
    Abstract: A process for producing a donor substrate for creating a three-dimensional integrated structure comprises the following steps: providing a semiconductor substrate comprising a surface layer, referred to as an active layer, and a layer comprising a plurality of cavities extending beneath the active layer, each cavity being separated from an adjacent cavity by a partition, forming an electronic device in a region of the active layer located plumb with a cavity, depositing a protective mask on the active layer so as to cover the electronic device while at the same time exposing a region of the active layer located plumb with each partition, and implanting atomic species through regions of the active layer exposed by the mask to form a weakened zone in each partition.
    Type: Grant
    Filed: March 22, 2019
    Date of Patent: February 1, 2022
    Assignee: Soitec
    Inventors: Gweltaz Gaudin, Didier Landru, Bruno Ghyselen
  • Publication number: 20210387853
    Abstract: A method for manufacturing a device comprising a membrane extending over a useful cavity, the method comprising: providing a generic structure comprising a surface layer extending in a main plane and arranged on a first face of a support substrate, the support substrate comprising elementary cavities opening under the surface layer and partitions delimiting each elementary cavity, the partitions having top surfaces that form all or part of the first face of the support substrate; defining a group of adjacent elementary cavities, such that a contour of the group of elementary cavities corresponds, in the main plane, to a contour of the useful cavity; and removing the partitions situated within the contour of the group of elementary cavities, in order to form the useful cavity, and to free the surface layer arranged above the useful cavity and forming the membrane.
    Type: Application
    Filed: December 12, 2019
    Publication date: December 16, 2021
    Inventor: Bruno Ghyselen
  • Publication number: 20210367139
    Abstract: A method of manufacturing a monocrystalline layer comprises the following successive steps: providing a donor substrate comprising a piezoelectric material of composition ABO3, where A consists of at least one element from among Li, Na, K, H, Ca; and B consists of at least one element from among Nb, Ta, Sb, V; providing a receiver substrate, transferring a layer called the “seed layer” from the donor substrate on to the receiver substrate, such that the seed layer is at the bonding interface, followed by thinning of the donor substrate layer; and growing a monocrystalline layer of composition A?B?O3 on piezoelectric material ABO3 of the seed layer, where A? consists of a least one of the following elements Li, Na, K, H; B? consists of a least one of the following elements Nb, Ta, Sb, V; and A? is different from A or B? is different from B.
    Type: Application
    Filed: August 6, 2021
    Publication date: November 25, 2021
    Inventors: Bruno Ghyselen, Jean-Marc Bethoux
  • Patent number: 11101428
    Abstract: A method of manufacturing a monocrystalline layer, comprises the following successive steps: providing a donor substrate comprising a piezoelectric material of composition ABO3, where A consists of at least one element from among Li, Na, K, H, Ca; and B consists of at least one element from among Nb, Ta, Sb, V; providing a receiver substrate, transferring a layer called the “seed layer” from the donor substrate on to the receiver substrate, such that the seed layer is at the bonding interface, followed by thinning of the donor substrate layer; and growing a monocrystalline layer of composition A?B?O3 on piezoelectric material ABO3 of the seed layer where A? consists of a least one of the following elements Li, Na, K, H; B? consists of a least one of the following elements Nb, Ta, Sb, V; and A? is different from A or B? is different from B.
    Type: Grant
    Filed: December 21, 2016
    Date of Patent: August 24, 2021
    Assignee: SOITEC
    Inventors: Bruno Ghyselen, Jean-Marc Bethoux
  • Publication number: 20210132002
    Abstract: A microsensor for detecting ions in a fluid, comprises: a field-effect transistor having a source, a drain, an active region between the source and the drain, and a gate disposed above the active region, an active layer, in which the active region is formed, a dielectric layer positioned beneath the active layer, a support substrate disposed under the dielectric layer and comprising at least one buried cavity located plumb with the gate of the field-effect transistor in order to receive the fluid.
    Type: Application
    Filed: March 19, 2019
    Publication date: May 6, 2021
    Inventor: Bruno Ghyselen
  • Publication number: 20210095391
    Abstract: A process for producing a monocrystalline layer of LNO material comprises the transfer of a monocrystalline seed layer of YSZ material to a carrier substrate of silicon material followed by epitaxial growth of the monocrystalline layer of LNO material.
    Type: Application
    Filed: March 26, 2019
    Publication date: April 1, 2021
    Inventor: Bruno Ghyselen
  • Publication number: 20210074906
    Abstract: A process for producing a crystalline layer of PZT material, comprising the transfer of a monocrystalline seed layer of SrTiO3 material to a carrier substrate of silicon material, followed by epitaxial growth of the crystalline layer of PZT material.
    Type: Application
    Filed: March 26, 2019
    Publication date: March 11, 2021
    Inventor: Bruno Ghyselen
  • Publication number: 20210057268
    Abstract: A process for producing a donor substrate for creating a three-dimensional integrated structure comprises the following steps: providing a semiconductor substrate comprising a surface layer, referred to as an active layer, and a layer comprising a plurality of cavities extending beneath the active layer, each cavity being separated from an adjacent cavity by a partition, forming an electronic device in a region of the active layer located plumb with a cavity, depositing a protective mask on the active layer so as to cover the electronic device while at the same time exposing a region of the active layer located plumb with each partition, and implanting atomic species through regions of the active layer exposed by the mask to form a weakened zone in each partition.
    Type: Application
    Filed: March 22, 2019
    Publication date: February 25, 2021
    Inventors: Gweltaz Gaudin, Didier Landru, Bruno Ghyselen
  • Publication number: 20210054528
    Abstract: A process for producing a monocrystalline layer of GaAs material comprises the transfer of a monocrystalline seed layer of SrTiO3 material to a carrier substrate of silicon material followed by epitaxial growth of a monocrystalline layer of GaAs material.
    Type: Application
    Filed: March 26, 2019
    Publication date: February 25, 2021
    Inventor: Bruno Ghyselen
  • Publication number: 20210043826
    Abstract: A design process is used for designing a device comprising a plurality of micro-machined elements, each comprising a flexible membrane, the elements being arranged in a plane in a determined topology. The design process comprises a step of defining the determined topology so that it has a character compatible with a generic substrate having cavities, the characteristics of which are pre-established. Each flexible membrane of the micro-machined elements is associated with one cavity of the generic substrate. The present disclosure also relates to a fabrication process for fabricating a device comprising a plurality of micro-machined elements, and to this device itself, wherein only some of the pairs of cavities and flexible membranes are configured to form a set of functional micro-machined elements.
    Type: Application
    Filed: January 18, 2019
    Publication date: February 11, 2021
    Inventor: Bruno Ghyselen
  • Publication number: 20210032772
    Abstract: A process for producing a monocrystalline layer of AlN material comprises the transfer of a monocrystalline seed layer of SiC-6H material to a carrier substrate of silicon material, followed by the epitaxial growth of the monocrystalline layer of AlN material.
    Type: Application
    Filed: March 26, 2019
    Publication date: February 4, 2021
    Inventor: Bruno Ghyselen