Patents by Inventor Bruno Ghyselen

Bruno Ghyselen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210095391
    Abstract: A process for producing a monocrystalline layer of LNO material comprises the transfer of a monocrystalline seed layer of YSZ material to a carrier substrate of silicon material followed by epitaxial growth of the monocrystalline layer of LNO material.
    Type: Application
    Filed: March 26, 2019
    Publication date: April 1, 2021
    Inventor: Bruno Ghyselen
  • Publication number: 20210074906
    Abstract: A process for producing a crystalline layer of PZT material, comprising the transfer of a monocrystalline seed layer of SrTiO3 material to a carrier substrate of silicon material, followed by epitaxial growth of the crystalline layer of PZT material.
    Type: Application
    Filed: March 26, 2019
    Publication date: March 11, 2021
    Inventor: Bruno Ghyselen
  • Publication number: 20210054528
    Abstract: A process for producing a monocrystalline layer of GaAs material comprises the transfer of a monocrystalline seed layer of SrTiO3 material to a carrier substrate of silicon material followed by epitaxial growth of a monocrystalline layer of GaAs material.
    Type: Application
    Filed: March 26, 2019
    Publication date: February 25, 2021
    Inventor: Bruno Ghyselen
  • Publication number: 20210057268
    Abstract: A process for producing a donor substrate for creating a three-dimensional integrated structure comprises the following steps: providing a semiconductor substrate comprising a surface layer, referred to as an active layer, and a layer comprising a plurality of cavities extending beneath the active layer, each cavity being separated from an adjacent cavity by a partition, forming an electronic device in a region of the active layer located plumb with a cavity, depositing a protective mask on the active layer so as to cover the electronic device while at the same time exposing a region of the active layer located plumb with each partition, and implanting atomic species through regions of the active layer exposed by the mask to form a weakened zone in each partition.
    Type: Application
    Filed: March 22, 2019
    Publication date: February 25, 2021
    Inventors: Gweltaz Gaudin, Didier Landru, Bruno Ghyselen
  • Publication number: 20210043826
    Abstract: A design process is used for designing a device comprising a plurality of micro-machined elements, each comprising a flexible membrane, the elements being arranged in a plane in a determined topology. The design process comprises a step of defining the determined topology so that it has a character compatible with a generic substrate having cavities, the characteristics of which are pre-established. Each flexible membrane of the micro-machined elements is associated with one cavity of the generic substrate. The present disclosure also relates to a fabrication process for fabricating a device comprising a plurality of micro-machined elements, and to this device itself, wherein only some of the pairs of cavities and flexible membranes are configured to form a set of functional micro-machined elements.
    Type: Application
    Filed: January 18, 2019
    Publication date: February 11, 2021
    Inventor: Bruno Ghyselen
  • Publication number: 20210032772
    Abstract: A process for producing a monocrystalline layer of AlN material comprises the transfer of a monocrystalline seed layer of SiC-6H material to a carrier substrate of silicon material, followed by the epitaxial growth of the monocrystalline layer of AlN material.
    Type: Application
    Filed: March 26, 2019
    Publication date: February 4, 2021
    Inventor: Bruno Ghyselen
  • Publication number: 20210020434
    Abstract: A process for producing a monocrystalline layer of diamond or iridium material comprises transferring a monocrystalline seed layer of SrTiO3 material onto a carrier substrate of silicon material, followed by epitaxial growth of the monocrystalline layer of diamond or iridium material.
    Type: Application
    Filed: March 26, 2019
    Publication date: January 21, 2021
    Inventor: Bruno Ghyselen
  • Publication number: 20200343441
    Abstract: A method for manufacturing film, notably monocrystalline, on a flexible sheet, comprises the following steps: providing a donor substrate, forming an embrittlement zone in the donor substrate so as to delimit film, forming the flexible sheet by deposition over the surface of the film, and detaching the donor substrate along the embrittlement zone so as to transfer the film onto the flexible sheet.
    Type: Application
    Filed: October 31, 2018
    Publication date: October 29, 2020
    Inventors: Bruno Ghyselen, Jean-Marc Bethoux
  • Publication number: 20200328342
    Abstract: A method for healing defects in a layer of composition ABO3 where A consists of at least one element selected from: Li, Na, K, H, Ca, Mg, Ba, Sr, Pb, La, Bi, Y, Dy, Gd, Tb, Ce, Pr, Nd, Sm, Eu, Ho, Zr, Sc, Ag, Tl and B consists of at least one element selected from: Nb, Ta, Sb, Ti, Zr, Sn, Ru, Fe, V, Sc, C, Ga, Al, Si, Mn, Zr, Tl, the layer being obtained by a layer transfer method in which ionic species are implanted into a substrate of composition ABO3 so as to form a weakened zone delineating the layer, the substrate then being detached along the weakened zone in order to obtain a layer that is detached from the rest of the donor substrate, wherein the method comprises exposing the layer to a medium containing ions of a constituent element A so as to make the ions penetrate into the transferred layer.
    Type: Application
    Filed: May 24, 2017
    Publication date: October 15, 2020
    Inventor: Bruno Ghyselen
  • Publication number: 20200303242
    Abstract: A method for manufacturing a film on a support having a non-flat surface comprises: providing a donor substrate having a non-flat surface, forming an embrittlement zone in the donor substrate so as to delimit the film to be transferred, forming the support by deposition on the non-flat surface of the film to be transferred, and detaching the donor substrate along the embrittlement zone, so as to transfer the film onto the support.
    Type: Application
    Filed: October 31, 2018
    Publication date: September 24, 2020
    Inventors: Bruno Ghyselen, Jean-Marc Bethoux
  • Patent number: 10778121
    Abstract: A wasted heat harvesting device for harvesting electricity including switching means configured to convey a magnetic field from a first region to at least a second region when the temperature of the switching means crosses a predetermined temperature.
    Type: Grant
    Filed: February 15, 2018
    Date of Patent: September 15, 2020
    Assignee: Saint-Augustin Canada Electric Inc.
    Inventors: Rainer Krause, Bruno Ghyselen
  • Publication number: 20200259069
    Abstract: A method for producing a layer of composition AA?BO3, where A is composed of at least one element selected from: Li, Na, K, Ca, Mg, Ba, Sr, Pb, La, Bi, Y, Dy, Gd, Tb, Ce, Pr, Nd, Sm, Eu, Ho, Zr, Sc, Ag and Tl, and B is composed of at least one element selected from: Nb, Ta, Sb, Ti, Zr, Sn, Ru, Fe, V, Sc, C, Ga, Al, Si, Mn Zr and Tl, wherein the method comprises the steps of: providing a donor substrate of composition ABO3, forming a layer of composition ABO3 by thinning the donor substrate, and, before and/or after the thinning step, exposing the ABO3 layer to a medium containing ions of an element A? belonging to the same list of elements as A, A? being different from A, such that the ions penetrate into the layer to form a layer of composition AA?BO3.
    Type: Application
    Filed: May 24, 2017
    Publication date: August 13, 2020
    Applicant: Soitec
    Inventor: Bruno Ghyselen
  • Patent number: 10644340
    Abstract: A method of providing a layer of solid electrolyte comprises providing a host substrate including a crystalline solid electrolyte layer, and transferring the crystalline solid electrolyte layer from the host substrate to a receiver substrate. The method may be used to manufacture various devices, such as solid oxide fuel cells, oxygen sensors, batteries, and donor structures.
    Type: Grant
    Filed: April 1, 2016
    Date of Patent: May 5, 2020
    Assignee: Soitec
    Inventor: Bruno Ghyselen
  • Publication number: 20190390366
    Abstract: A process for manufacturing a two-dimensional film of a group IV material having a hexagonal crystalline structure, in particular, graphene, comprises formation of a growth substrate, comprising the transfer of a single-crystal metal film suitable for the growth of the two-dimensional film on a support substrate, and epitaxial growth of the two-dimensional film on the metal film of the substrate.
    Type: Application
    Filed: January 31, 2018
    Publication date: December 26, 2019
    Inventors: Bruno Ghyselen, Jean-Marc Bethoux
  • Patent number: 10490688
    Abstract: A semiconductor device, in particular a solar cell is formed on the basis of a hybrid deposition strategy using MOCVD and MBE in order to provide lattice matched semiconductor compounds. To this end, the MBE may be applied for providing a nitrogen-containing semiconductor compound that allows a desired low band gap energy and a lattice matched configuration with respect to gallium arsenide substrates.
    Type: Grant
    Filed: October 8, 2012
    Date of Patent: November 26, 2019
    Assignee: Soitec
    Inventors: Rainer Krause, Bruno Ghyselen
  • Patent number: 10453739
    Abstract: A method of transferring blocks of semiconductor material to a substrate comprises the following steps: a. providing an intermediate substrate, the intermediate substrate comprising, on one of its faces, blocks, the blocks comprise a monocrystalline material, the blocks comprising an embrittlement area delimiting a block portion intended to be transferred onto a final substrate; b. executing an assembling step by putting a free surface of each of the blocks in contact with the final substrate; and c. executing, after the assembling step, detachment at the embrittlement area of each of the blocks. During the assembling step, the intermediate substrate deforms so that the free surfaces of the blocks become coplanar.
    Type: Grant
    Filed: September 19, 2016
    Date of Patent: October 22, 2019
    Assignee: Soitec
    Inventor: Bruno Ghyselen
  • Patent number: 10343902
    Abstract: A method for manufacturing a structure comprises a) providing a donor substrate comprising front and rear faces; b) providing a support substrate; c) forming an intermediate layer on the front face of the donor substrate or on the support substrate; d) assembling the donor and support substrates with the intermediate layer therebetween; e) thinning the rear face of the donor substrate to form a useful layer of a useful thickness having a first face disposed on the intermediate layer and a second free face; and wherein the donor substrate comprises a buried stop layer and a fine active layer having a first thickness less than the useful thickness, between the front face of the donor substrate and the stop layer; and after step e), removing, in first regions of the structure, a thick active layer delimited by the second free face of the useful layer and the stop layer.
    Type: Grant
    Filed: March 3, 2017
    Date of Patent: July 9, 2019
    Assignee: Soitec
    Inventor: Bruno Ghyselen
  • Publication number: 20190006577
    Abstract: A method of fabricating a monocrystalline piezoelectric layer, wherein the method comprises: supplying a donor substrate of the piezoelectric material, supplying a receiving substrate, transferring a layer called a “seed layer” from the donor substrate onto the receiving substrate, and implementing an epitaxy of the piezoelectric material on the seed layer until a required thickness for the monocrystalline piezoelectric layer is obtained.
    Type: Application
    Filed: December 21, 2016
    Publication date: January 3, 2019
    Inventors: Bruno Ghyselen, Ionut Radu, Jean-Marc Bethoux
  • Publication number: 20180375014
    Abstract: A method of manufacturing a monocrystalline layer comprises the following successive steps: providing a donor substrate comprising a piezoelectric material of composition ABO3, where A consists of at least one element from among Li, Na, K, H, Ca; and B consists of at least one element from among Nb, Ta, Sb, V; providing a receiver substrate, transferring a layer called the “seed layer” from the donor substrate on to the receiver substrate, such that the seed layer is at the bonding interface, followed by thinning of the donor substrate layer; and growing a monocrystalline layer of composition A?B?O3 on piezoelectric material ABO3 of the seed layer where A? consists of a least one of the following elements Li, Na, K, H; B? consists of a least one of the following elements Nb, Ta, Sb, V; and A? is different from A or B? is different from B.
    Type: Application
    Filed: December 21, 2016
    Publication date: December 27, 2018
    Inventors: Bruno Ghyselen, Jean-Marc Bethoux
  • Patent number: 10014803
    Abstract: A wasted heat harvesting device for harvesting electricity including a switching device configured to convey a magnetic field from a first region to at least a second region when the temperature of the switching device crosses a predetermined temperature.
    Type: Grant
    Filed: July 20, 2012
    Date of Patent: July 3, 2018
    Assignee: SAINT-AUGUSTIN CANADA ELECTRIC INC.
    Inventors: Rainer Krause, Bruno Ghyselen