Abstract: A mobile terminal including a touchscreen configured to display a keypad including a plurality of key buttons having assigned first alphabet characters, respectively; and a controller configured to receive a first key input of a first key button of the plurality of key buttons, to display a first alphabet character corresponding to the first key input on a display portion of the mobile terminal, to predict a word that starts with the first alphabet character, to receive a second key input of the first key button after the first key input, and to display a second alphabet character included in the predicted word on the display portion based on the second key input.

Abstract: The inventive concept provides light emitting diodes and methods of manufacturing the same. The light emitting diode may include a first electrode layer, a light emitting layer on the first electrode layer, a second electrode layer on the light emitting layer, and a buffer layer formed on the second electrode layer, the buffer layer having concave-convex patterns increasing extraction efficiency of light generated from the light emitting layer.

Abstract: A method for fabricating a field effect transistor according to an exemplary embodiment of the present disclosure includes: forming an active layer, a cap layer, an ohmic metal layer and an insulating layer on a substrate; forming multilayered photoresists on the insulating layer; patterning the multilayered photoresists to form a photoresist pattern including a first opening for gate electrode and a second opening for field electrode; etching the insulating layer by using the photoresist pattern as an etching mask so that the insulating layer in the first opening is etched more deeply and the cap layer is exposed through the first opening; etching the cap layer exposed by etching the insulating layer through the first opening to form a gate recess region; and depositing a metal on the gate recess region and the etched insulating layer to form a gate-field electrode layer.

Abstract: Disclosed are a power semiconductor device and a method of fabricating the same which can increase a breakdown voltage of the device through a field plate formed between a gate electrode and a drain electrode and achieve an easier manufacturing process at the same time. The power semiconductor device according to an exemplary embodiment of the present disclosure includes a source electrode and a drain electrode formed on a substrate; a dielectric layer formed between the source electrode and the drain electrode to have a lower height than heights of the two electrodes and including an etched part exposing the substrate; a gate electrode formed on the etched part; a field plate formed on the dielectric layer between the gate electrode and the drain electrode; and a metal configured to connect the field plate and the source electrode.

Abstract: The present disclosure relates to a nitride electronic device and a method for manufacturing the same, and particularly, to a nitride electronic device and a method for manufacturing the same that can implement various types of nitride integrated structures on the same substrate through a regrowth technology (epitaxially lateral over-growth: ELOG) of a semi-insulating gallium nitride (GaN) layer used in a III-nitride semiconductor electronic device including Group III elements such as gallium (Ga), aluminum (Al) and indium (In) and nitrogen.

Abstract: Disclosed are a microarray type nitride light emitting device and a method of manufacturing the same. More particularly, a uniform current distribution property is ensured by dividing a fine light emitting region by using a first transparent contact layer according to a resistance change property in heat treatment of a material of a transparent conducting oxide used as a transparent contact layer, and connecting the divided light emitting regions by using a second transparent contact layer.

Abstract: The present disclosure relates to a gallium-nitride light emitting diode and a manufacturing method thereof and the gallium-nitride light emitting diode includes an n-type nitride semiconductor layer formed on a substrate; an active layer formed on the n-type nitride semiconductor layer; a p-type doped intermediate layer formed on the active layer; and a p-type nitride semiconductor layer formed on the intermediate layer.

Abstract: Provided is a method of manufacturing a light emitting diode using a nitride semiconductor, which including the steps of: forming n- and p-type current spreading layers using a hetero-junction structure; forming trenches by dry-etching the n- and p-type current spreading layers; forming an n-type metal electrode layer in the trench of the n-type current spreading layer; forming a p-type metal electrode layer in the trench of the p-type current spreading layer; and forming a transparent electrode layer on the p-type metal electrode layer, thereby improving current spreading characteristics as compared with the conventional method of manufacturing the light emitting diode, and enhancing operating characteristics of the light emitting diode.

Abstract: A nitride semiconductor-based light emitting device is provided. The nitride semiconductor-based light emitting device is formed of a nitride semiconductor having a wurtzite lattice structure with the Ga face. The device has a substrate, a buffer layer, a first p-type contact layer, a second p-type contact layer, a first hole diffusion layer, a second hole diffusion layer, a light emitting active region, a second electron diffusion layer, a first electron diffusion layer, a second n-type contact layer and a first n-type contact layer, which are sequentially stacked. Such a structure may effectively employ quasi-two-dimensional free electron and free hole gases formed at heterojunction interfaces due to the spontaneous polarization and the piezoelectric polarization in the wurtzite lattice structure with the Ga face, and thus enhances the emission uniformity and emission efficiency of the light emitting device.

Abstract: A mobile terminal including a touchscreen configured to display a keypad including a plurality of key buttons having assigned first alphabet characters, respectively; and a controller configured to receive a first key input of a first key button of the plurality of key buttons, to display a first alphabet character corresponding to the first key input on a display portion of the mobile terminal, to predict a word that starts with the first alphabet character, to receive a second key input of the first key button after the first key input, and to display a second alphabet character included in the predicted word on the display portion based on the second key input.

Abstract: Provided are a CIGS solar cell and a method of fabricating the CIGS solar cell. In the method, a buffer layer exposing protrusions is formed. Then, a window electrode layer having an uneven surface conforming with the protrusions of the buffer layer is formed. Thus, an additional process for making the upper surface of a window electrode layer rough is unnecessary in order to decrease surface reflectance of incident sunlight and increase the solar cell efficiency, so that productivity can be improved.

Abstract: A solar cell and method of fabricating the same are provided. The solar cell includes a metal electrode layer, an optical absorption layer, a buffer layer, and a transparent electrode layer. The metal electrode layer is disposed on a substrate. The optical absorption layer is disposed on the metal electrode layer. The buffer layer is disposed on the optical absorption layer and includes an indium gallium nitride (InxGa1-xN). The transparent electrode layer is disposed on the buffer layer.

Abstract: Provided is a method of manufacturing a light emitting diode using a nitride semiconductor, which including the steps of: forming n- and p-type current spreading layers using a hetero-junction structure; forming trenches by dry-etching the n- and p-type current spreading layers; forming an n-type metal electrode layer in the trench of the n-type current spreading layer; forming a p-type metal electrode layer in the trench of the p-type current spreading layer; and forming a transparent electrode layer on the p-type metal electrode layer, thereby improving current spreading characteristics as compared with the conventional method of manufacturing the light emitting diode, and enhancing operating characteristics of the light emitting diode.

Abstract: A nitride semiconductor-based light emitting device is provided. The nitride semiconductor-based light emitting device is formed of a nitride semiconductor having a wurtzite lattice structure with the Ga face. The device has a substrate, a buffer layer, a first p-type contact layer, a second p-type contact layer, a first hole diffusion layer, a second hole diffusion layer, a light emitting active region, a second electron diffusion layer, a first electron a first n-type contact layer, which are sequentially stacked. Such a structure may effectively employ quasi-two-dimensional free electron and free hole gases formed at heterojunction interfaces due to the spontaneous polarization and the piezoelectric polarization in the wurtzite lattice structure with the Ga face, and thus enhances the emission uniformity and emission efficiency of the light emitting device.

Abstract: A plasma display panel includes a first panel, a second panel and a front filter coupled to the second panel. The first panel include address electrodes, a dielectric, phosphors, and barrier ribs. The second panel is assembled to the first panel such that the barrier ribs are interposed between the first and second panels, and the second panel includes sustain electrode pairs, a dielectric, and a protect layer. The front filter includes a multi-functional layer having patterns of an electromagnetic interference (EMI) shield film to form spaces therebetween, and a base polymer filling some of the spaces between the patterns of the EMI shield film.

Abstract: A phosphor layer to improve the light emitting efficiency and color purity and a plasma display panel using the same are provided. According to an embodiment, the phosphor layer includes a phosphor to be excited by a discharge gas and to emit light of a specific color, and a photonic crystal and having a photonic band gap.

Abstract: Disclosed are green sheets that can be used to shorten the fabrication procedure of plasma display panels and to improve the configuration and crystalline state of electrodes. The green sheets for use in the fabrication of display panels comprise a dielectric layer green sheet to which a plurality of electrode materials are bound at regular intervals, and at least one protective film attached to at least one surface of the dielectric layer green sheet. Further disclosed are a method and an apparatus for producing the green sheets, plasma display panels using the green sheets, and methods fabricating the plasma display panels.

Abstract: A plasma display apparatus, a plasma display panel, and a manufacturing method of the plasma display panel are provided. The plasma display panel comprises a row barrier rib partitioning adjacent cells having the same phosphor coated, and having a groove at its top and a column barrier rib intersecting with the row barrier rib.

Abstract: Device and method for fabricating a display panel having ink-jet printing applied thereto, the device including a stage for supporting a substrate, a base having one or more than one rail for transporting the stage, and one or more than one ink-jet head rotatable by an angel for spraying a pattern forming solution to the substrate, thereby reducing a fabrication cost and simplifying a fabrication process.

Abstract: Device and method for fabricating a display panel having ink-jet printing applied thereto, the device including a stage for supporting a substrate, a base having one or more than one rail for transporting the stage, and one or more than one ink-jet head rotatable by an angel for spraying a pattern forming solution to the substrate, thereby reducing a fabrication cost and simplifying a fabrication process.