Abstract: Provided is a chemical vapor deposition (CVD) apparatus, including: a reaction chamber including an inner pipe having an internal space, and an external pipe configured to cover the inner pipe so as to maintain a sealing state thereof; a wafer holder disposed within the inner pipe and receiving a plurality of wafers stacked therein; and a gas supplier including at least one stem pipe disposed at the outside of the reaction chamber so as to supply a reactive gas thereto, a plurality of branch pipes connected to the stem pipe to introduce the reactive gas from the outside of the reaction chamber into the reaction chamber, and a plurality of spray nozzles provided with the branch pipes to spray the reactive gas to the plurality of respective wafers.

Abstract: A method of producing a p-type nitride semiconductor includes growing a first nitride semiconductor layer doped with a first concentration of a p-type impurity. The first nitride semiconductor layer is annealed to activate the p-type impurity. A second nitride semiconductor layer doped with a second concentration of a p-type impurity is grown on the first nitride semiconductor layer. The second concentration is higher than the first concentration.

Abstract: Provided is a composition for detecting a protein, containing a tyrosine oxide-coupled biomaterial. Various diseases may be easily and rapidly diagnosed by easily detecting the composition containing a tyrosine oxide-coupled biomaterial according to the present invention, by identifying a color of the protein bound with a tyrosine oxide-coupled biomaterial prepared by binding tyrosine oxide, which is a natural pigment present in a living body, with the biomaterial. Accordingly, the composition of the present invention may be used to easily and rapidly diagnose various diseases in real time in an operating room, and may usefully replace conventional histological analysis without a secondary antibody reaction and a final operation of color expression.

Abstract: An LED package improved in efficiency and brightness. In the package, a body has a mounting part thereon. A plurality of light emitting diode chips are mounted on the mounting part. The mounting part has a cross-section upwardly convexed with a non-planar top portion so that at least two adjacent ones of the light emitting diode chips have opposing side surfaces facing a different direction from each other.

Abstract: Disclosed is a method of removing a photoresist pattern, which includes radiating light onto a substrate having a photoresist pattern formed thereon and implanted with a predetermined dopant so that the temperature of the substrate is increased to be equal to or higher than a temperature able to remove the photoresist pattern, and by which the photoresist pattern formed on the substrate can be almost completely removed using a simple process for radiating light onto the substrate so that the temperature of the substrate is increased to be equal to or higher than a temperature able to the photoresist pattern.

Abstract: The present invention relates to a batroxobin-encoding nucleotide sequence and/or a mutated ?-factor secretion signal sequence, and a vector and a transformant using the same. The batroxobin-encoding nucleotide sequence of this invention exhibits an excellent expression efficiency in yeast, particular Pichia pastoris and the recombinant batroxobin is obtained at 4-13 fold higher yield than natural-occurring batroxobin-encoding sequences. The protein expression system which uses the batroxobin-encoding nucleotide sequence as well as mutated ?-factor secretion signal peptide sequence of this invention obtains the recombinant batroxobin at about 20-fold higher yield than natural-occurring batroxobin-encoding sequences. In addition, the recombinant batroxobin prepared using the sequence of this invention has a significantly plausible activity and stability compared with natural-occurring batroxobin.

Abstract: A chemical vapor deposition (CVD) method includes forming a first semiconductor layer on a substrate that is mounted on a satellite disk at a first process temperature; and forming a second semiconductor layer on the first semiconductor layer at a second process temperature. Also, a method of manufacturing a light-emitting device (LED) includes: forming a quantum well layer on a substrate that is mounted on a satellite disk at a first process temperature; and forming a quantum barrier layer on the quantum well layer at a second process temperature.

Abstract: A nitride-based semiconductor light emitting device includes an anti-bowing layer having a composition of AlxGa1-xN (0.01?x?0.04), and a light emitting structure formed on the anti-bowing layer and including a first conductivity-type nitride semiconductor layer, an active layer, and a second conductivity-type nitride semiconductor layer.

Abstract: A method of growing a semiconductor epitaxial thin film and a method of fabricating a semiconductor light emitting device using the same are provided. The method of growing a semiconductor epitaxial thin film, includes: disposing a plurality of wafers loaded in a wafer holder in a reaction chamber; and jetting a reactive gas including a chlorine organic metal compound to the wafers through a gas supply unit provided to extend in a direction in which the wafers are loaded, to grow a semiconductor epitaxial thin film on a surface of each of the wafers.

Abstract: There is provided a method of manufacturing a semiconductor light emitting device, the method including: sequentially growing a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer on a semiconductor growth substrate to form a light emitting part; forming a support part on the second conductivity type semiconductor layer to be coupled to the light emitting part; separating the semiconductor growth substrate from the light emitting part; and applying an etching gas to the semiconductor growth substrate to remove a residue of the first conductivity type semiconductor layer from a surface of the semiconductor growth substrate.

Abstract: The present disclosure provides an isolated DNA molecule derived from Mycobacteria having a DNA mismatch repair function represented by a nucleic acid sequence as disclosed in SEQ ID NO: 1 or 2. Also provided is a promoter sequence having SEQ ID NO: 3, and a recombinant vector comprising the isolated DNA of the present disclosure and a promoter operatively linked to the DNA molecule. The isolated DNA molecule of the present disclosure is classified as MutS4A and MutS4 and confers cells with resistance to UV and macrophages when transformed into the cells. Further it increases the frequency of homologous recombination and the genetic stability of a heterologous plasmid in cells.

Abstract: A compressor having a casing to which a gas suction pipe is connected; a driving motor provided in the casing; a cylinder; a valve supporting plate (210) covering the cylinder (300), the valve supporting plate (210) having a suction hole (212) for sucking gas into the cylinder (300) and two discharge holes (211) for discharging gas compressed in the cylinder (300); a piston (100) having two protrusions (101) at a pressure surface in correspondence to the two discharge holes (211) of the valve supporting plate (210), the protrusions (101) having different sized cross-sections, the piston being linearly reciprocal in the cylinder (300) by receiving a driving force of the driving motor; a suction valve coupled to the valve supporting plate (210) to open and close the suction hole (212); a discharge valve coupled to the valve supporting plate to open and close the two discharge holes (211).

Abstract: The present disclosure provides a DNA molecule capable of replication in Mycobacteria having a nucleic acid sequence as disclosed in SEQ ID NO: 1, a shuttle vector constructed using it and a transformed cells containing the present vector. The vector of about 18 kb of the present disclosure contains 16 ORFs, a replication origin and a rep-like protein essential for replication. Therefore, the plasmid of the present disclosure can be utilized as a gene delivery system/research, and also in a therapeutic system such as immune therapeutics by effectively delivering proteins or heterologous DNA and expressing the encoded DNA in cells.

Abstract: Provided is a chemical vapor deposition (CVD) apparatus, including: a reaction chamber including an inner pipe having an internal space, and an external pipe configured to cover the inner pipe so as to maintain a sealing state thereof; a wafer holder disposed within the inner pipe and receiving a plurality of wafers stacked therein; and a gas supplier including at least one stem pipe disposed at the outside of the reaction chamber so as to supply a reactive gas thereto, a plurality of branch pipes connected to the stem pipe to introduce the reactive gas from the outside of the reaction chamber into the reaction chamber, and a plurality of spray nozzles provided with the branch pipes to spray the reactive gas to the plurality of respective wafers.

Abstract: A chemical vapor deposition (CVD) apparatus, including: a reaction chamber including an internal chamber having an internal space, an external chamber configured to cover the internal chamber so as to maintain a sealing state thereof; a wafer holder disposed within the internal chamber for a plurality of wafers stacked therein; a gas supplier including an inner pipe having an inner path, an external pipe having an external path, a refrigeration pipe having a cooling path. The inner path of the inner pipe supplies a first process gas into the reaction chamber. The external path of the external pipe surrounds the inner pipe to supply a second process gas therethrough. The refrigeration pipe supplies a refrigerant to prevent temperature rise in the inner pipe.

Abstract: A detachable connecting rod includes a first member (410)a large end portion (411) having a trough hole (H1), and a first connection rod portion (412) extending from the large end portion (411), the first connection rod portion (412) having a pair of spaced apart arms defining a coupling groove (413) extending in the same direction as an axial direction of the through hole (H1); a second member (420) including a small end portion having a through hole (H2), and second connection rod portion (422) extending from the small end portion, the second connection rod (422) portion being inserted into the coupling groove (413) and a coupling unit for coupling the first connection rod portion (412) to the second connection rod portion inserted (412) into the coupling groove (413) of the first member (410). The detachable connecting rod is useable in a compressor.

Abstract: An apparatus and a method of driving a backlight unit and a display apparatus employing the same. Wherein a driving current, which is divided in a step-by-step fashion, is sequentially changed and output according to a current control signal. The current control signal is divided into low levels and high levels that are consecutively and repeatedly applied to a backlight controller. The driving current is reduced from a reference current corresponding to a number of the high levels during a time period that starts when the low level is applied for at least a first reference time interval and ends when the high level is applied for at least a second reference time interval.

Abstract: A touch screen panel integrated liquid crystal display device in which a mutual capacitive touch screen panel is integrated with a liquid crystal display panel is provided. The device includes a first substrate, a plurality of pixels on the first substrate and including respective pixel electrodes, a second substrate facing the first substrate, a common electrode on a first surface of the second substrate facing the pixel electrodes, a plurality of sensor electrodes on a second surface of the second substrate and including a plurality of transparent pairs extending in a first direction and having a plurality of protrusions extending in a second direction crossing the first direction, and a liquid crystal layer between the substrates, wherein the device senses a touch position by detecting a change of capacitance applied to the sensor electrodes corresponding to an alternating current common voltage applied to the common electrode.

Abstract: A nitride semiconductor light emitting diode (LED) comprises an n-type nitride semiconductor layer; an electron emitting layer formed on the n-type nitride semiconductor layer, the electron emitting layer being composed of a nitride semiconductor layer including a transition element of group III; an active layer formed on the electron emitting layer; and a p-type nitride semiconductor layer formed on the active layer.

Abstract: Disclosed is a method of removing a photoresist pattern, which includes radiating light onto a substrate having a photoresist pattern formed thereon and implanted with a predetermined dopant so that the temperature of the substrate is increased to be equal to or higher than a temperature able to remove the photoresist pattern, and by which the photoresist pattern formed on the substrate can be almost completely removed using a simple process for radiating light onto the substrate so that the temperature of the substrate is increased to be equal to or higher than a temperature able to the photoresist pattern.