Patents by Inventor Bum-seok Seo

Bum-seok Seo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20080002458
    Abstract: A nonvolatile variable resistance memory device may include a lower electrode; a stacked structure including a first Cu compound layer disposed on the lower electrode, and a second Cu compound layer disposed on the first Cu compound layer; and an upper electrode disposed on the second Cu compound layer.
    Type: Application
    Filed: May 18, 2007
    Publication date: January 3, 2008
    Inventors: Hyung-jin Bae, Jung-hyun Lee, Sang-jun Choi, Bum-seok Seo
  • Publication number: 20070297091
    Abstract: A patterned magnetic recording medium and a method of manufacturing the same are provided. The patterned magnetic recording medium includes a plate, a plurality of nanowires formed vertically on the plate, and a magnetic layer patterned on the nanowires. The magnetic layer protrudes in areas corresponding to the nanowires.
    Type: Application
    Filed: January 31, 2007
    Publication date: December 27, 2007
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sang-jun Choi, Jung-hyun Lee, Hoon-sang Oh, Bum-seok Seo
  • Publication number: 20070196984
    Abstract: Provided are a nonvolatile memory device, a layer deposition apparatus and a method of fabricating a nonvolatile memory device using the same. The apparatus may include a chamber capable of holding a substrate, a particle-discharging target discharging particles toward the substrate, and a first ion beam gun accelerating a first plurality of ions and irradiating the accelerated ions toward the substrate. The method of fabricating a nonvolatile memory device may include discharging particles from a target toward a substrate, accelerating and irradiating a first plurality of ions toward the substrate, forming a reaction product by reacting the discharged particles and the accelerated and irradiated first plurality of ions, and forming a data storage layer having a deposited layer on the substrate. The nonvolatile memory device may include a data storage layer including a transition metal oxide layer formed by reacting discharged transition metal particles and accelerated and irradiated oxygen ions.
    Type: Application
    Filed: January 19, 2007
    Publication date: August 23, 2007
    Inventors: Jung-hyun Lee, Sang-bong Bang, Sang-jun Choi, Bum-seok Seo, Chang-soo Lee
  • Publication number: 20070164214
    Abstract: A conductive carbon nanotube tip and a manufacturing method thereof are provided. The conductive carbon nanotube tip includes a carbon nanotube tip substantially vertically placed on a substrate, and a ruthenium coating layer covering a surface of the carbon nanotube tip and extending to at least a part of the substrate. The manufacturing method includes substantially vertically placing a carbon nanotube tip on a substrate, and forming a ruthenium coating layer on the carbon nanotube tip and at least a part of the substrate.
    Type: Application
    Filed: August 31, 2006
    Publication date: July 19, 2007
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sang-jun Choi, Jung-Hyun Lee, Sang-bong Bang, Bum-seok Seo, Chang-soo Lee
  • Publication number: 20070148451
    Abstract: A method of forming carbon fibers at a low temperature below 450° C. using an organic-metal evaporation method is provided. The method includes: heating a substrate and maintaining the substrate at a temperature of 200 to 450° C. after loading the substrate into a reaction chamber; preparing an organic-metal compound containing Ni; forming an organic-metal compound vapor by vaporizing the organic-metal compound; and forming carbon fibers on the substrate by facilitating a chemical reaction between the organic-metal compound vapor and a reaction gas containing ozone in the reaction chamber.
    Type: Application
    Filed: October 17, 2006
    Publication date: June 28, 2007
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sung-ho PARK, Myoung-jae LEE, June-mo KOO, Bum-seok SEO
  • Publication number: 20070071892
    Abstract: Provided are an organic-metal precursor material that can be readily decomposed without reacting with an oxidant, a method of manufacturing a metal thin film using the organic-metal precursor material, and a metal thin film prepared using the organic-metal precursor material. The organic-metal precursor material is an organic molecule having lone-pair electrons selected from the group consisting of ether, amine, tetrahydrofuran (THF), a phosphine group, and a phosphite group, and has a structure of covalent coordination bond.
    Type: Application
    Filed: August 31, 2006
    Publication date: March 29, 2007
    Inventors: Jung-hyun Lee, Bum-seok Seo
  • Publication number: 20070065961
    Abstract: Example embodiments relate to a method of manufacturing amorphous NiO thin films and nonvolatile memory devices including amorphous thin films that use a resistance material. Other example embodiments relate to a method of manufacturing amorphous NiO thin films having improved switching and resistance characteristics by reducing a leakage current and non-volatile memory devices using an amorphous NiO thin film. Provided is a method of manufacturing an amorphous NiO thin film having improved switching behavior by reducing leakage current and improving resistance characteristics. The method may include preparing a substrate in a vacuum chamber, preparing a nickel precursor material, preparing a source gas by vaporizing the nickel precursor material, preparing a reaction gas, preparing a purge gas and forming a monolayer NiO thin film on the substrate by performing one cycle of sequentially supplying the source gas, the purge gas, the reaction gas and the purge gas into the vacuum chamber.
    Type: Application
    Filed: August 18, 2006
    Publication date: March 22, 2007
    Inventors: Sung-Ho Park, Bum-Seok Seo, Myoung-Jae Lee, June-Mo Koo, Sun-Ae Seo, Young-Kwan Cha
  • Publication number: 20070059447
    Abstract: Methods of fabricating a lanthanum oxide layer, and methods of fabricating a MOSFET and/or a capacitor especially adapted for semiconductor applications using such a lanthanum oxide layer are disclosed. The methods include a preliminary step of disposing a semiconductor substrate into a chamber. Tris(bis(trimethylsilyl)amino)Lanthanum as a lanthanum precursor is then injected into the chamber such that the lanthanum precursor is chemisorbed on the semiconductor substrate. Then, after carrying out a first purge of the chamber, at least one oxidizer is injected into the chamber such that the oxidizer is chemisorbed with the lanthanum precursor on the semiconductor substrate. Then, the chamber is purged a second time.
    Type: Application
    Filed: November 14, 2006
    Publication date: March 15, 2007
    Inventors: Jong-Pyo Kim, Jung-Hyun Lee, Bum-Seok Seo, Jung-Hyoung Lee
  • Publication number: 20070012974
    Abstract: Provided is a method for manufacturing a material layer capable of increasing the deposition rate of a noble metal layer on a ferroelectric layer, a method for manufacturing a ferroelectric capacitor using the same, a ferroelectric capacitor manufactured by the same method, and a semiconductor memory device having the ferroelectric capacitor and a manufacturing method thereof. According to a method for manufacturing the material layer, a ferroelectric layer is formed. The ferroelectric layer may be exposed to seed plasma, and a material layer including a source material of the seed plasma may be formed on a region of the ferroelectric layer exposed to the seed plasma.
    Type: Application
    Filed: July 12, 2006
    Publication date: January 18, 2007
    Inventors: June-mo Koo, Bum-seok Seo, Young-soo Park, Jung-hyun Lee, Sang-min Shin, Suk-pil Kim
  • Patent number: 7153786
    Abstract: Methods of fabricating a lanthanum oxide layer, and methods of fabricating a MOSFET and/or a capacitor especially adapted for semiconductor applications using such a lanthanum oxide layer are disclosed. The methods include a preliminary step of disposing a semiconductor substrate into a chamber. Tris(bis(trimethylsilyl)amino)Lanthanum as a lanthanum precursor is then injected into the chamber such that the lanthanum precursor is chemisorbed on the semiconductor substrate. Then, after carrying out a first purge of the chamber, at least one oxidizer is injected into the chamber such that the oxidizer is chemisorbed with the lanthanum precursor on the semiconductor substrate. Then, the chamber is purged a second time.
    Type: Grant
    Filed: January 12, 2005
    Date of Patent: December 26, 2006
    Assignee: Samsung Electronics, Co., Ltd.
    Inventors: Jong-Pyo Kim, Jung-Hyun Lee, Bum-Seok Seo, Jung-Hyoung Lee
  • Patent number: 7084482
    Abstract: A capacitor of a semiconductor device includes a lower electrode, a dielectric layer, including a plurality of band gaps, formed on the lower electrode, and an upper electrode formed on the dielectric layer. A band gap of the plurality of band gaps in the dielectric layer that is not adjacent to either the lower electrode or the upper electrode is smaller than a band gap of the plurality of band gaps in the dielectric layer adjacent to the lower electrode and a band gap of the plurality of band gaps in the dielectric layer adjacent to the upper electrode.
    Type: Grant
    Filed: August 13, 2004
    Date of Patent: August 1, 2006
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jung-hyun Lee, Bum-seok Seo
  • Publication number: 20060138393
    Abstract: Provided are a Ge precursor for low temperature deposition containing Ge, N, and Si, a GST thin layer doped with N and Si formed using the same, a memory device including the GST thin layer doped with N and Si, and a method of manufacturing the GST thin layer. The Ge precursor for low temperature deposition contains N and Si such that the temperature at which the Ge precursor is deposited to form a thin layer, particularly, the GST thin layer doped with N and Si, can be low. In addition, during the low temperature deposition, H2 plasma can be used. The GST phase-change layer doped with N and Si formed from the Ge precursor for low temperature deposition has a low reset current. Therefore, a memory device including the GST phase-change layer doped with N and Si can be highly integrated, have a high capacity, and can be operated at a high speed.
    Type: Application
    Filed: October 20, 2005
    Publication date: June 29, 2006
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Bum-seok Seo, Jung-hyun Lee
  • Publication number: 20060040445
    Abstract: A capacitor having a dielectric layer including a composite oxide, the composite oxide including a transition metal and including a lanthanide group element, a memory device including the same and a method of manufacturing the capacitor are provided. The transition metal may be titanium and the composite oxide may be nitrided. The method may include providing a precursor of a transition metal, providing a precursor of a lanthanide group element, and forming a composite oxide on the lower electrode by oxidizing both the precursor of the transition metal and the precursor of the lanthanide group element, the composite oxide containing the transition metal and the lanthanide group element.
    Type: Application
    Filed: August 22, 2005
    Publication date: February 23, 2006
    Inventors: Jung-hyun Lee, Sung-ho Park, Bum-seok Seo
  • Publication number: 20050156256
    Abstract: Methods of fabricating a lanthanum oxide layer, and methods of fabricating a MOSFET and/or a capacitor especially adapted for semiconductor applications using such a lanthanum oxide layer are disclosed. The methods include a preliminary step of disposing a semiconductor substrate into a chamber. Tris(bis(trimethylsilyl)amino)Lanthanum as a lanthanum precursor is then injected into the chamber such that the lanthanum precursor is chemisorbed on the semiconductor substrate. Then, after carrying out a first purge of the chamber, at least one oxidizer is injected into the chamber such that the oxidizer is chemisorbed with the lanthanum precursor on the semiconductor substrate. Then, the chamber is purged a second time.
    Type: Application
    Filed: January 12, 2005
    Publication date: July 21, 2005
    Inventors: Jong-Pyo Kim, Jung-Hyun Lee, Bum-Seok Seo, Jung-Hyoung Lee
  • Publication number: 20050082593
    Abstract: In a capacitor of a semiconductor device, a method of manufacturing the same and a memory device including the capacitor, the capacitor includes a lower electrode, a dielectric film on the lower electrode, an upper electrode on the dielectric film, and a first reaction barrier film for preventing a reaction between the lower electrode and the dielectric film, the first reaction barrier film being interposed between the lower electrode and the dielectric film.
    Type: Application
    Filed: August 18, 2004
    Publication date: April 21, 2005
    Inventors: Jung-hyun Lee, Bum-seok Seo
  • Publication number: 20050082595
    Abstract: A capacitor of a semiconductor device includes a lower electrode, a dielectric layer, including a plurality of band gaps, formed on the lower electrode, and an upper electrode formed on the dielectric layer. A band gap of the plurality of band gaps in the dielectric layer that is not adjacent to either the lower electrode or the upper electrode is smaller than a band gap of the plurality of band gaps in the dielectric layer adjacent to the lower electrode and a band gap of the plurality of band gaps in the dielectric layer adjacent to the upper electrode.
    Type: Application
    Filed: August 13, 2004
    Publication date: April 21, 2005
    Inventors: Jung-hyun Lee, Bum-seok Seo
  • Publication number: 20040238872
    Abstract: Provided are a method for manufacturing a high k-dielectric oxide film, a capacitor having a dielectric film formed using the method, and a method for manufacturing the capacitor. A high k-dielectric oxide film is manufactured by (a) loading a semiconductor substrate in an ALD apparatus, (b) depositing a reaction material having a predetermined composition rate of a first element and a second element on the semiconductor substrate, and (c) forming a first high k-dielectric oxide film having the two elements on the semiconductor substrate by oxidizing the reaction material such that the first element and the second element are simultaneously oxidized. In this method, the size of an apparatus is reduced, productivity is enhanced, and manufacturing costs are lowered. Further, the high k-dielectric oxide film exhibits high dielectric constant and low leakage current and trap density.
    Type: Application
    Filed: March 11, 2004
    Publication date: December 2, 2004
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Jung-hyun Lee, Bum-seok Seo, Yo-sep Min, Young-jin Cho