Abstract: An image sensor includes two or more phase-difference detection pixels disposed adjacent to each other, a plurality of general pixels spaced apart from the phase-difference detection pixels, first and second peripheral pixels, and first to third light shields. The first and second peripheral pixels are adjacent to the phase-difference detection pixels, and between the phase-difference detection pixels and the general pixels. The first light shield is disposed in one of the general pixels and has a first width. The second light shield extends into the first peripheral pixel from a first area between the phase-difference detection pixels and the first peripheral pixel, and has a second width different from the first width. The third light shield extends into the second peripheral pixel from a second area between the phase-difference detection pixels and the second peripheral pixel, and has a third width different from the first width.

Abstract: The present invention relates to a silver coated glass frit used in a paste composition for forming a solar cell electrode, a method for preparing the same, and a silver paste composition using a silver coated glass frit for a solar cell.

Abstract: An image sensor, including a substrate having a first surface, and a second surface opposite to the first surface; a first focus pixel; a first merged pixel; a second merged pixel; a first color filter; a second color filter; a third color filter; a grid pattern separating the first to third color filters, but not overlapped by the first to third color filters; a first micro-lens disposed on the first color filter; and a second micro-lens disposed on the second and third color filters, wherein a first-third unit pixel, the first focus pixel, and a second-third unit pixel are continuously arranged along the first direction, and wherein a width of the grid pattern between the first color filter and the second color filter is greater than a width of the grid pattern between the second color filter and the third color filter.

Abstract: An image sensor includes different first and second focus pixels in a substrate; a first adjacent pixel in the substrate and adjacent to the first focus pixel in a positive first direction, a pixel being absent between the first focus pixel and the first adjacent pixel; a first micro-lens covering the first adjacent pixel; a second adjacent pixel in the substrate and adjacent to the second focus pixel in a positive first direction, a pixel being absent between the second focus pixel and the second adjacent pixel; and a second micro-lens covering the second adjacent pixel, and an area of the first micro-lens being different from an area of the second micro-lens.

Abstract: An image sensor that provides a uniform sensitivity for pixels having color filters of the same color to increase the image quality is provided. The image sensor includes a substrate, a first grid pattern disposed on the substrate and including a first side wall and a second side wall opposite to the first side wall, a first pixel including a first photoelectric conversion element and a first color filter, and a second pixel including a second photoelectric conversion element and a second color filter. The first color filter contacts the first side wall and the second color filter contacts the second side wall. The first color filter and the second color filter are color filters of same color, and a first thickness of the first color filter is greater than a second thickness of the second color filter.

Abstract: An image sensor includes a substrate including a first surface on which light is incident and a second surface opposite to the first surface, unit pixels in the substrate, each including a photoelectric conversion layer, color filters on the first surface of the substrate, a grid pattern on the first surface of the substrate defining a respective light receiving area of each of the unit pixels, and microlenses on the color filters, each of the microlenses corresponding to a respective one of the unit pixels, wherein the unit pixels include a first pixel and a second pixel sharing a first color filter which is one of the color filters, and a first light receiving area of the first pixel is different from a second light receiving area of the second pixel.

Abstract: An image sensor in which a shading phenomenon is decreased and the quality is increased is provided. The image sensor includes a light-receiving region including a plurality of unit pixels. The image sensor further includes a first region with unit pixels adjacent to a center of the light-receiving region, and a second region with the unit pixels spaced apart from the center of the light-receiving region. In both regions, a plurality of color filters corresponding to the plurality of unit pixels is disposed on a first face of the substrate, as well as a grid pattern interposed between the plurality of color filters defining boundaries between the unit pixels. A width of the grid pattern in the second region is greater than a width of the grid pattern in the first region, thereby adjusting light receiving areas near the edge of the image sensor to correct for a shading phenomenon.

Abstract: An image sensor includes two or more phase-difference detection pixels disposed adjacent to each other, a plurality of general pixels spaced apart from the phase-difference detection pixels, first and second peripheral pixels, and first to third light shields. The first and second peripheral pixels are adjacent to the phase-difference detection pixels, and between the phase-difference detection pixels and the general pixels. The first light shield is disposed in one of the general pixels and has a first width. The second light shield extends into the first peripheral pixel from a first area between the phase-difference detection pixels and the first peripheral pixel, and has a second width different from the first width. The third light shield extends into the second peripheral pixel from a second area between the phase-difference detection pixels and the second peripheral pixel, and has a third width different from the first width.

Abstract: The present invention relates to a silver coated glass frit used in a paste composition for forming a solar cell electrode, a method for preparing the same, and a silver paste composition using a silver coated glass frit for a solar cell.

Abstract: An image sensor includes two or more phase-difference detection pixels disposed adjacent to each other, a plurality of general pixels spaced apart from the phase-difference detection pixels, first and second peripheral pixels, and first to third light shields. The first and second peripheral pixels are adjacent to the phase-difference detection pixels, and between the phase-difference detection pixels and the general pixels. The first light shield is disposed in one of the general pixels and has a first width. The second light shield extends into the first peripheral pixel from a first area between the phase-difference detection pixels and the first peripheral pixel, and has a second width different from the first width. The third light shield extends into the second peripheral pixel from a second area between the phase-difference detection pixels and the second peripheral pixel, and has a third width different from the first width.

Abstract: An electronic device may include a photoelectric element, a shielding layer on the photoelectric element, and a color filter structure on the shielding layer. The shielding layer may define a first opening over the photoelectric element. The color filter structure may define a second opening over the photoelectric element and the first opening. The color filter structure may appear dark from a view facing the color filter structure.

Abstract: An image sensor may include a substrate which includes a plurality of block regions. Each block region may include a separate plurality of pixel regions. Each pixel region may include a separate photoelectric element of a plurality of photoelectric elements in the substrate and a separate micro lens of a plurality of micro lenses on the substrate. Each micro lens of the plurality of micro lenses may be laterally offset from a vertical centerline of the pixel region towards a center of the block region. Each block region of the plurality of block regions may include a common shifted shape of the plurality of micro lenses of the block region.

Abstract: An image sensor includes two or more phase-difference detection pixels disposed adjacent to each other, a plurality of general pixels spaced apart from the phase-difference detection pixels, first and second peripheral pixels, and first to third light shields. The first and second peripheral pixels are adjacent to the phase-difference detection pixels, and between the phase-difference detection pixels and the general pixels. The first light shield is disposed in one of the general pixels and has a first width. The second light shield extends into the first peripheral pixel from a first area between the phase-difference detection pixels and the first peripheral pixel, and has a second width different from the first width. The third light shield extends into the second peripheral pixel from a second area between the phase-difference detection pixels and the second peripheral pixel, and has a third width different from the first width.

Abstract: An electronic device may include a photoelectric element, a shielding layer on the photoelectric element, and a color filter structure on the shielding layer. The shielding layer may define a first opening over the photoelectric element. The color filter structure may define a second opening over the photoelectric element and the first opening. The color filter structure may appear dark from a view facing the color filter structure.

Abstract: An electronic device may include a photoelectric element, a shielding layer on the photoelectric element, and a color filter structure on the shielding layer. The shielding layer may define a first opening over the photoelectric element. The color filter structure may define a second opening over the photoelectric element and the first opening. The color filter structure may appear dark from a view facing the color filter structure.

Abstract: An image sensor may include a substrate which includes a plurality of block regions. Each block region may include a separate plurality of pixel regions. Each pixel region may include a separate photoelectric element of a plurality of photoelectric elements in the substrate and a separate micro lens of a plurality of micro lenses on the substrate. Each micro lens of the plurality of micro lenses may be laterally offset from a vertical centerline of the pixel region towards a center of the block region. Each block region of the plurality of block regions may include a common shifted shape of the plurality of micro lenses of the block region.

Abstract: An electronic device may include a photoelectric element, a shielding layer on the photoelectric element, and a color filter structure on the shielding layer. The shielding layer may define a first opening over the photoelectric element. The color filter structure may define a second opening over the photoelectric element and the first opening. The color filter structure may appear dark from a view facing the color filter structure.

Abstract: An image sensor may include a substrate which includes a plurality of block regions. Each block region may include a separate plurality of pixel regions. Each pixel region may include a separate photoelectric element of a plurality of photoelectric elements in the substrate and a separate micro lens of a plurality of micro lenses on the substrate. Each micro lens of the plurality of micro lenses may be laterally offset from a vertical centerline of the pixel region towards a center of the block region. Each block region of the plurality of block regions may include a common shifted shape of the plurality of micro lenses of the block region.

Abstract: An image sensor includes a plurality of photoelectric detectors, a plurality of color filters, and at least one pixel isolation region between adjacent ones of the photoelectric detectors. The color filters include a white color filter, and the color filters correspond to respective ones of the photoelectric detectors. The at least one pixel isolation region serves to physically and at least partially optically separate the photoelectric detectors from one another.