Abstract: This transformer chip includes an element insulating layer and a high-voltage coil and a low-voltage coil embedded in the element insulating layer. The high-voltage coil includes a first end face facing the low-voltage coil side in the z-direction, a second end face opposite the first end face, and a first side face. The element insulating layer includes a third insulating layer, a second insulating layer laminated on the third insulating layer and having a higher relative dielectric constant than the third insulating layer, and a first insulating layer laminated on the second insulating layer and having a lower relative dielectric constant than the second insulating layer. The high-voltage coil is provided within the first insulating layer with the first end face in contact with the second insulating layer.

Abstract: A semiconductor device includes a first semiconductor element, a first terminal electrically connected to the first semiconductor element, a second terminal electrically connected to the first semiconductor element and spaced apart from the first terminal in a first direction, and a sealing resin covering the first semiconductor element and a part of each of the first terminal and the second terminal. The sealing resin includes a first side surface facing in a second direction orthogonal to the first direction and located closest to the first terminal and the second terminal in the second direction. The first terminal and the second terminal are spaced apart from the first side surface.

Abstract: A semiconductor device includes a substrate, a lower insulating film that is formed on the substrate, a resistor that is formed on the lower insulating film, and an upper insulating film that is formed on the lower insulating film such as to cover the resistor. The lower insulating film includes a first nitride film and a first SiO-based insulating film that is formed on the first nitride film and the upper insulating film includes a second nitride film. The resistor is formed on the first SiO-based insulating film and a lower surface of a peripheral edge portion of the second nitride film is joined to an upper surface of the first nitride film.

Abstract: An insulating chip includes a substrate; an element insulating layer which is disposed on the substrate, and a capacitor which is embedded in the element insulating layer and which includes a first electrode plate and a second electrode plate. The first electrode plate and the second electrode plate are disposed face to face in a first direction that is orthogonal to the thickness direction of the element insulating layer. A signal propagating device includes the insulating chip.

Abstract: An insulation chip includes an element insulation layer, a first capacitor, and a second capacitor. The first capacitor includes a first front surface-side electrode plate and a first back surface-side electrode plate that are disposed opposite each other. The second capacitor includes a second front surface-side electrode plate and a second back surface-side electrode plate. The second front surface-side electrode plate and the second back surface-side electrode plate are opposed to each other. In the element insulation layer, the first back surface-side electrode plate and the second back surface-side electrode plate are electrically connected. This signal transmission device includes: a first chip including a first circuit; the insulation chip; and a second chip including a second circuit configured to perform at least one of transmission and reception of a signal with the first circuit via the insulation chip.

Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes: a substrate; an element insulating layer, disposed on the substrate; and a semiconductor resistive layer, disposed within the element insulating layer. The semiconductor resistive layer extends along a first direction perpendicular to a thickness direction of the substrate and includes an uneven portion along the thickness direction.

Abstract: A semiconductor device includes: a substrate; an element insulating layer provided on the substrate; and a semiconductor resistance layer provided on the element insulating layer. The semiconductor resistance layer includes: a front surface side resistance layer extending in a first direction perpendicular to a thickness direction of the substrate; a substrate side resistance layer arranged closer to the substrate than the front surface side resistance layer in the thickness direction; and an internal connector that electrically connects the front surface side resistance layer and the substrate side resistance layer in series.

Abstract: A semiconductor device includes a first semiconductor element formed with a step-down circuit, a first lead electrically connected to the first semiconductor element, and a second lead electrically connected to the first semiconductor element and spaced apart from the first lead in a first direction. The semiconductor device additionally includes a sealing resin covering the first semiconductor element and a portion of each of the first lead and the second lead. The sealing resin includes a recess formed between the first lead and the second lead in the first direction. As viewed in the first direction, the recess overlaps with the first lead and the second lead.

Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a semiconductor substrate and a substrate-side insulating layer disposed on the semiconductor substrate. The substrate-side insulating layer includes: a first oxide film; a second oxide film, disposed on the first oxide film and separated from the first oxide film; and a first nitride insulating layer and a second nitride insulating layer disposed between the first oxide film and the second oxide film. The second nitride insulating layer has a film density higher than a film density of the first nitride insulating layer.

Abstract: A transformer chip of a signal transmitting device has a substrate, an element insulation layer, and a first transformer and a second transformer provided within the element insulation layer. The first transformer comprises a first coil, and a second coil positioned facing the first coil in the z direction. The second transformer comprises a first coil, and a second coil positioned facing the first coil in the z direction. The second coil of the first transformer and the second coil of the second transformer are electrically connected. The transformer chip comprises a back surface insulating layer provided on the back surface of the substrate.

Abstract: A transformer chip of this signal transmission device comprises a substrate, an element insulation layer, and a first transformer and a second transformer provided within the element insulation layer. The first transformer is provided with a first coil, and a second coil which is disposed facing the first coil in a z direction. The second transformer is provided with a first coil, and a second coil which is disposed facing the first coil in the z direction. The second coil of the first transformer and the second coil of the second transformer are electrically connected. The substrate includes a body part, and a substrate insulation layer formed on the surface of the body part. The element insulation layer is layered on the surface of the substrate insulation layer.

Abstract: An electronic component includes an underlay resin, and a pad electrode that has a sidewall located on the underlay resin and an uneven portion formed at a lower end portion of the sidewall.

Abstract: A semiconductor is disclosed that may include: a first drift region; a base region arranged on the first semiconductor layer; a source region arranged on the base region; a main electrode electrically connected to the source region; and a gate electrode structure that penetrates the source region and base region and reaches the first drift region, wherein the gate electrode structure comprises: a gate electrode; and an insulating material that insulates the gate electrode from the first drift region and the base region; and a field plate structure reaching the first drift region deeper than the gate electrode structure, wherein the field plate structure comprises: a field plate; a resistive part that electrically connects the main electrode to the field plate; and an insulating material that insulates the field plate and the resistive part section from the first drift region and the base region.

Abstract: A semiconductor device according to one or more embodiments may include a first semiconductor region, a second semiconductor region arranged on the first semiconductor region, a third semiconductor region arranged on the second semiconductor region, a first trench penetrating the second semiconductor region from the third semiconductor region and reaching the first semiconductor region, a first main electrode arranged on the second semiconductor region via a first insulating film, field electrodes arranged via second insulating films in a second trenches that are deeper than the first trench and reach the first semiconductor region. The first main electrode may be arranged between the field electrodes. The field electrodes may be arranged alternately, and the field electrodes that are alternately adjacent to each other may be arranged so that the field electrodes partially overlap with adjacent field electrodes in an alignment direction of the arranging field electrodes in a plan view.

Abstract: An insulating transformer includes an insulation layer, a transformer embedded in the insulation layer, and a capacitor. The transformer includes first and second coils. The first coil includes a first signal terminal and a first ground terminal. The second coil is separated from the first coil in a thickness direction of the insulation layer and includes a second signal terminal and a second ground terminal. The capacitor includes first and second capacitor electrodes. The first capacitor electrode is connected to the first ground terminal of the first coil. The second capacitor electrode is located between the first capacitor electrode and the second coil and connected to the second ground terminal of the second coil. The insulating transformer further includes a first insulation film located between the first coil and the first capacitor electrode, and a second insulation film located between the second coil and the second capacitor electrode.

Abstract: This isolation transformer includes: an isolation layer; a transformer having a first coil and a second coil; and a capacitor having a first capacitor electrode and a second capacitor electrode disposed between the first coil and the second coil. The isolation layer includes a first isolation film in which the first coil is embedded, a second isolation film on the upper surface of the first isolation film, a protective film on the upper surface of the second isolation film, a third isolation film on the upper surface of the protective film, a fourth isolation film on the upper surface of the third isolation film, and a fifth isolation film on the upper surface of the fourth isolation film. The second capacitor electrode is formed between the third isolation film and the fourth isolation film. The second coil is formed between the fourth isolation film and the fifth isolation film.

Abstract: An isolation transformer includes an insulation layer, a transformer, and a capacitor. The transformer includes first and second coils separated from each other in a thickness-wise direction of the insulation layer. The capacitor includes a first capacitor electrode and a second capacitor electrode. The insulation layer includes thin films and interlayer insulation films alternately stacked in the direction. The thin films include first and second thin films separated from each other in the direction. The interlayer insulation films include a first interlayer insulation film located next to the first thin film in the direction and a second interlayer insulation film located next to the second thin film in the direction. The first capacitor electrode is formed between the first thin film and the first interlayer insulation film. The second capacitor electrode is formed between the second thin film and the second interlayer insulation film.

Abstract: An insulating transformer comprising: an insulation layer; a transformer including a first coil embedded in the insulation layer and a second coil; and a capacitor including a first capacitor electrode and a second capacitor electrode, the first capacitor electrode being arranged between the first coil and the second coil and connected to a first ground terminal, and the second capacitor electrode being arranged between the first capacitor electrode and the second coil and connected to a second ground terminal.

Abstract: A semiconductor device includes an insulating layer, a barrier electrode layer formed on the insulating layer, a Cu electrode layer that includes a metal composed mainly of copper and that is formed on a principal surface of the barrier electrode layer, and an outer-surface insulating film that includes copper oxide, that coats an outer surface of the Cu electrode layer, and that is in contact with the principal surface of the barrier electrode layer.

Abstract: A semiconductor device includes a semiconductor layer that has a principal surface, a first conductive layer that is formed on the principal surface of the semiconductor layer, a first insulating portion that is formed on the principal surface of the semiconductor layer so as to cover the first conductive layer and that includes a first insulating layer of at least three or more layers, a second insulating portion that is formed on the first insulating portion, that has a dielectric constant differing from a dielectric constant of the first insulating layer, and that includes a second insulating layer not included in the first insulating portion, and a second conductive layer that is formed on the second insulating portion, that faces the first conductive layer through the first insulating portion and the second insulating portion, and that is connected to a potential differing from a potential of the first conductive layer.