Abstract: Water-continuous emulsion of elastomeric polymers are disclosed having a solids content of greater than 75%, an average particle size less than 5 ?m, and having sufficient stability to produce a stable lower solids emulsion upon dilution with water comprising; an elastomeric polymer, surfactant, water, optional plasticizer, optional low molecular weight acid, and is essentially free of organic solvents. The water-continuous emulsions of elastomeric polymers can be prepared by; (I) forming a premix that is essentially free of organic solvents comprising an elastomeric polymer and surfactant, and optionally a plasticizer and low molecular weight acid, and (II) adding water to the premix with mixing to form a water continuous emulsion of the elastomeric polymer having a solids content of greater than 75%, an average particle size less than 5 ?m, and having sufficient stability to produce a stable lower solids emulsion upon dilution with water.

Abstract: The present disclosure provides a system and method for manufacturing a mask for semiconductor processing. In one example, the system includes at least one exposure unit configured to select a recipe for a later baking process in a post treatment unit, a buffer unit coupled to the exposure unit and configured to move the mask substrate from the exposure unit to the post treatment unit without exposing the mask substrate to the environment; and the post treatment unit coupled to the buffer unit and the exposure unit and configured to perform a baking process on the mask substrate using baking parameters associated with the recipe selected by the exposure unit.

Abstract: A methodology for doing process control by using a heating apparatus comprising heating zones is revealed. First, a target CD (critical dimension) map is assigned. A baseline CD map corresponding to a substrate processed with the heating apparatus at a baseline setting is also obtained. An original CD map corresponding to a substrate processed at an original setting is obtained. For each heating zone, a perturbed CD map corresponding to a substrate processed at a perturbed setting is also obtained. The temperature distribution of the heating apparatus is adjusted according to the error CD map defined by the baseline CD map and the target CD map, basis functions defined by the original CD map and perturbed CD maps, and expansion coefficients expanding the error CD map with basis functions.

Abstract: A method for forming a semiconductor device includes forming a photoresist layer over a substrate and patterning the photoresist layer to form photoresist portions. A second layer is formed over the substrate in areas not covered by the photoresist portions and the photoresist portions are removed. After removing the photoresist portions, the second layer is used to modify the substrate to create at least a portion of the semiconductor device.

Abstract: A method of wafer repairing comprises identifying locations and patterns of defective regions in a semiconductor wafer; communicating the locations and patterns of defective regions to a direct-writing tool; forming a photoresist layer on the semiconductor wafer; locally exposing the photoresist layer within the defective regions using an energy beam; developing the photoresist layer on the semiconductor wafer; and wafer-processing the semiconductor wafer under the photoresist layer after exposing and developing.

Abstract: An exposure system includes a mask stage module adapted for holding a first mask and a second mask, wherein the first mask is configured for illumination by a first beam to form a transformed first beam having a first pattern from the first mask and the second mask is configured for illumination by a second beam to form a transformed second beam having a second pattern from the second mask. The exposure system also includes a beam combiner configured to combine the transformed first and second beams to form a resultant beam, wherein the resultant beam is projected into a substrate coated with a photoresist layer.

Abstract: A method of creating a resist image on a semiconductor substrate includes exposing a layer of photoresist on the semiconductor substrate and developing the exposed layer of photoresist using a first fluid including supercritical carbon dioxide and a base such as Tetra-Methyl Ammonium Hydroxide (TMAH). Additionally, the developed photoresist can be cleaned using a second fluid including supercritical carbon dioxide and a solvent such as methanol, ethanol, isopropanol, and xylene.

Abstract: Disclosed is a photomask comprising a transparent substrate, an absorption layer proximate to the transparent substrate, and a pellicle mounted proximate to the transparent substrate. The absorption layer has at least one opening formed therein for receiving a wavelength-reducing material (WRM). The wavelength-reducing material and the absorption layer form a generally planar surface.

Abstract: An immersion lithography system is disclosed to comprise a fluid containing feature for providing an immersion fluid for performing immersion lithography on a wafer, and a seal ring covering a predetermined portion of a wafer edge for preventing the immersion fluid from leaking through the covered portion of the wafer edge while the fluid is used for the immersion lithography.

Abstract: An immersion lithography system for semiconductor manufacturing provides a lens assembly that moves relative to a wafer surface and includes a nozzle and drain assembly that is coupled to, and moves along, the lens assembly. The nozzle and drain assemblies may be disposed circumferentially opposite each other about the lens or an annular ring may be provided that surrounds the lens and includes a plurality of selectable alternating nozzles and drains. The nozzle and drain assemblies may rotatably surround the lens. At least a portion of the wafer being patterned is immersed in a liquid provided by the nozzle assembly and a flow direction is controlled by manipulating the nozzle and drain assemblies. Flow direction may be advantageously directed outwardly to reduce particulate contamination.

Abstract: A method and an apparatus for repairing resist latent image on a wafer are disclosed. In the method, an image scanner equipped with a first and a second wafer carrier, and a primary imaging column and a secondary imaging column is utilized to conduct the processes of imaging a resist latent image on a first wafer and repairing a defect in a resist latent image on a second wafer positioned on a second wafer carrier simultaneously. The primary imaging column and the secondary imaging column may be situated in the same vacuum chamber to facilitate operation.

Abstract: A method and system is disclosed for processing one or more oblique features on a mask or reticle substrate. After aligning the mask or reticle substrate with a predetermined reference system, an offset angle of a feature to be processed on the mask or reticle substrate with regard to either the horizontal or vertical reference direction of the predetermined reference system is determined. The mask or reticle substrate is rotated in a predetermined direction by the offset angle; and the feature on the mask or reticle substrate is processed using the predetermined reference system wherein the feature is processed in either the horizontal or vertical reference direction thereof.

Abstract: Provided are a high resolution lithography system and method. In one example, a method for producing a pattern on a substrate includes separating the pattern into at least a first sub-pattern containing lines oriented in a first direction and a second sub-pattern containing lines oriented in a second direction. Lines oriented in the first direction are created on a first layer of photosensitive material on the substrate using a first standing wave interference pattern. A portion of the created lines are trimmed to create the first sub-pattern. A second layer of photosensitive material is applied to the substrate after creating the first sub-pattern. Lines oriented in the second direction are created on the second layer using a second standing wave interference pattern. A portion of the created lines are trimmed to create the second sub-pattern.

Abstract: Water-continuous emulsion of curable elastomeric polymers are disclosed having a solids content of greater than 75%, an average particle size less than 5 ?m, and having sufficient stability to produce a stable lower solids emulsion upon dilution with water comprising; a curable elastomeric polymer, surfactant, internal cure additive, water, optional plasticizer, and optional low molecular weight acid. The water-continuous emulsions of curable elastomeric polymers can be prepared by; (I) forming a premix comprising an elastomeric polymer, surfactant, and internal cure additive, and (II) adding water to the premix with mixing to form a water continuous emulsion of the curable elastomeric polymer having a solids content of greater than 75%, an average particle size less than 5 ?m, and having sufficient stability to produce a stable lower solids emulsion upon dilution with water.

Abstract: Disclosed is a photomask having a wavelength-reducing material that may be used during photolithographic processing. In one example, the photomask includes a transparent substrate, an absorption layer having at least one opening, and a layer of wavelength-reducing material (WRM) placed into the opening. The thickness of the WRM may range from approximately a thickness of the absorption layer to approximately ten times the wavelength of light used during the photolithographic processing. In another example, the photomask includes at least one antireflection coating (ARC) layer.

Abstract: Disclosed is an objective lens adapted for use in liquid immersion photolithography and a method for making such a lens. In one example, the objective lens has multiple lens elements, one of which includes a transparent substrate and a layer of anti-corrosion coating (ACC). The ACC is formed proximate to the transparent substrate and is positioned between a liquid used during the liquid immersion photolithography and the transparent substrate to protect the transparent substrate from the liquid.

Abstract: A new optical lithographic exposure apparatus is described. The apparatus may comprise, for example, a lithographic stepper or scanner. A wafer stage comprises a means of supporting a semiconductor wafer. A mask stage comprises a means of holding a first mask and a second mask and maintaining a fixed relative position between the first mask and the second mask. The mask stage may further comprise an independent means of aligning each mask. A light source comprises a means to selectively shine actinic light through one of the first mask and the second mask. An imaging lens is capable of focusing the actinic light onto the semiconductor wafer. A step and scan method using the mask stage is provided. A first mask and a second mask are loaded into a mask stage of an optical lithographic exposure apparatus. The first mask and the second mask are aligned. The first mask is scanned. The wafer is then stepped. The second mask is scanned.

Abstract: A method for selectively altering a thickness of a radiation sensitive polymer layer including providing a substrate including at least one radiation sensitive polymer layer having a first thickness topography; exposing the at least one radiation sensitive polymer layer through a mask having a predetermined radiant energy transmittance distribution to selectively expose predetermined areas of the at least one sensitive polymer layer to predetermined radiant energy dosages; and, developing the at least one radiation sensitive polymer layer to alter the first thickness topography of the at least one radiation sensitive polymer layer to produce a second thickness topography.

Abstract: A new optical lithographic exposure apparatus is described. The apparatus may comprise, for example, a lithographic stepper or scanner. A wafer stage comprises a means of supporting a semiconductor wafer. A mask stage comprises a means of holding a first mask and a second mask and maintaining a fixed relative position between the first mask and the second mask. The mask stage may further comprise an independent means of aligning each mask. A light source comprises a means to selectively shine actinic light through one of the first mask and the second mask. An imaging lens is capable of focusing the actinic light onto the semiconductor wafer. A step and scan method using the mask stage is provided. A first mask and a second mask are loaded into a mask stage of an optical lithographic exposure apparatus. The first mask and the second mask are aligned. The first mask is scanned. The wafer is then stepped. The second mask is scanned.

Abstract: Water-continuous emulsion of silylated elastomeric polymers are disclosed having a solids content of greater than 75%, an average particle size less than 5 &mgr;m, and having sufficient stability to produce a stable lower solids emulsion upon dilution with water comprising; a silylated elastomeric polymer, surfactant, water, optional plasticizer, and optional low molecular weight acid. The water-continuous emulsions of silylated elastomeric polymers can be prepared by; (I) forming a premix comprising an elastomeric polymer and surfactant, and optionally a plasticizer and low molecular weight acid, and (II) adding water to the premix with mixing to form a water continuous emulsion of the silylated elastomeric polymer having a solids content of greater than 75%, an average particle size less than 5 &mgr;m, and having sufficient stability to produce a stable lower solids emulsion upon dilution with water.