Abstract: A method includes determining a cluster reliability of a computing cluster including a maximum computing capacity and representative of a reliability of the computing cluster when utilizing an entirety of the maximum computing capacity. The operations include receiving a provisioning request of the computing cluster including a threshold reliability of the computing cluster. In response to the provisioning request, determining, using the cluster reliability, a reserved computing capacity of the computing cluster based on the threshold reliability. The reserved computing capacity is less than the maximum computing capacity. Based on the reserved computing capacity and the maximum computing capacity, the operations include determining an unreserved computing capacity of the computing cluster. The operations include provisioning the computing cluster for execution of a user workload. The user workload executes on the unreserved computing capacity.

Abstract: An electronic display includes a plurality of pixels, each pixel including a data line, first and second selection lines and a common electrode. A control circuit element includes first and second diode-like elements coupled between the first and second selection lines and a charging node. A charging capacitive element is coupled between the charging node and the date line. An active pixel element is coupled between the charging node and the common electrode. The common electrode can overly the entire electronic display and is a suitable transparent conductive material. Each of the first and second diode-like elements includes an amorphous metal non-linear resistor. The active pixel element may include one of liquid crystal display circuitry, light emitting diode circuitry, and electrophoretic circuitry.

Abstract: The present disclosure is directed to display circuitry that can be formed on a flexible substrate. The circuitry includes a voltage divider formed from a first and second non-linear resistor device or a first and second transistor coupled in a diode configuration. The circuitry includes a driving thin film transistor coupled to the voltage divider. The non-linear resistor devices may include a lower electrode that is amorphous metal or a crystalline metal. The first and second transistor coupled in a diode configuration may have a lower electrode that is amorphous metal. Upper electrodes may be crystalline metal. The driving thin film transistors may have the lower electrode as amorphous or crystalline metal.

Abstract: An electronic display includes a plurality of pixels, each pixel including a data line, first and second selection lines and a common electrode. A control circuit element includes first and second diode-like elements coupled between the first and second selection lines and a charging node. A charging capacitive element is coupled between the charging node and the date line. An active pixel element is coupled between the charging node and the common electrode. The common electrode can overly the entire electronic display and is a suitable transparent conductive material. Each of the first and second diode-like elements includes an amorphous metal non-linear resistor. The active pixel element may include one of liquid crystal display circuitry, light emitting diode circuitry, and electrophoretic circuitry.

Abstract: An electronic display includes a plurality of pixels, each pixel including a data line, first and second selection lines and a common electrode. A control circuit element includes first and second diode-like elements coupled between the first and second selection lines and a charging node. A charging capacitive element is coupled between the charging node and the date line. An active pixel element is coupled between the charging node and the common electrode. The common electrode can overly the entire electronic display and is a suitable transparent conductive material. Each of the first and second diode-like elements includes an amorphous metal non-linear resistor. The active pixel element may include one of liquid crystal display circuitry, light emitting diode circuitry, and electrophoretic circuitry.

Abstract: A thin-film transistor includes a gate electrode formed on a non-conducting substrate. A top surface of the gate electrode has an RMS roughness less than 2 nm. A gate insulator having a thickness less than 25 nm is formed on the gate electrode. A semiconductor material having a thickness less than 50 nm is formed on the gate insulator. The smooth top surface of the gate insulator promotes smooth surfaces of the semiconductor material.

Abstract: An electronic display includes a plurality of pixels, each pixel including a data line, first and second selection lines and a common electrode. A control circuit element includes first and second diode-like elements coupled between the first and second selection lines and a charging node. A charging capacitive element is coupled between the charging node and the date line. An active pixel element is coupled between the charging node and the common electrode. The common electrode can overly the entire electronic display and is a suitable transparent conductive material. Each of the first and second diode-like elements includes an amorphous metal non-linear resistor. The active pixel element may include one of liquid crystal display circuitry, light emitting diode circuitry, and electrophoretic circuitry.

Abstract: The present disclosure is directed to display circuitry that can be formed on a flexible substrate. The circuitry includes a voltage divider formed from a first and second non-linear resistor device or a first and second transistor coupled in a diode configuration. The circuitry includes a driving thin film transistor coupled to the voltage divider. The non-linear resistor devices may include a lower electrode that is amorphous metal or a crystalline metal. The first and second transistor coupled in a diode configuration may have a lower electrode that is amorphous metal. Upper electrodes may be crystalline metal. The driving thin film transistors may have the lower electrode as amorphous or crystalline metal.

Abstract: The present invention relates to compounds which are of use in the field of agriculture as herbicides. The invention also relates to methods of using said compounds and compositions comprising said compounds.

Abstract: Amorphous multi-component metallic films can be used to improve the performance of electronic components such as resistors, diodes, and thin film transistors. Interfacial properties of AMMFs are superior to those of crystalline metal films, and therefore electric fields at the interface of an AMMF and an oxide film are more uniform. An AMMF resistor (AMNR) can be constructed as a three-layer structure including an amorphous metal, a tunneling insulator, and a crystalline metal layer. By modifying the order of the materials, the patterns of the electrodes, and the size and number of overlap areas, the I-V performance characteristics of the AMNR are adjusted. A non-coplanar AMNR has a five-layer structure that includes three metal layers separated by metal oxide tunneling insulator layers, wherein an amorphous metal thin film material is used to fabricate the middle electrodes.

Abstract: A milling machine may have a frame, first and second ground engagement members connected through respective, vertically adjustable leg columns to a front end of the frame, and third and fourth ground engagement members connected through respective, vertically adjustable leg columns to a rear end of the frame. Each vertically adjustable leg column includes a hydraulic cylinder connecting the frame and the associated ground engagement member. A milling drum is attached to the frame between the front and rear ends. At least one pair of the leg columns connected to the front end of the frame or the leg columns connected to the rear end of the frame includes an accumulator associated with each of the at least one pair of leg columns, a fluid conduit fluidly connecting a bore end of each of the hydraulic cylinders to the associated accumulator, and a control valve disposed in the fluid conduit and configured to control a flow of fluid between the hydraulic cylinders and the associated accumulators.

Abstract: Described herein are various amorphous metal thin film transistors. Embodiments of such transistors include an amorphous metal gate electrode and a channel conductor formed on a non-conducting substrate. Further embodiments of such transistors include an amorphous metal source electrode, an amorphous metal drain electrode, and a channel conductor formed on a non-conducting substrate. Methods of forming such transistors are also described.

Abstract: The present invention relates to compounds which are of use in the field of agriculture as herbicides. The compounds in question are of formula II and comprise a spirofused tricycle core: wherein R4 and R5 together with the carbon atom to which they are attached form a cyclic group.

Abstract: An electronic display includes a plurality of pixels, each pixel including a data line, first and second selection lines and a common electrode. A control circuit element includes first and second diode-like elements coupled between the first and second selection lines and a charging node. A charging capacitive element is coupled between the charging node and the date line. An active pixel element is coupled between the charging node and the common electrode. The common electrode can overly the entire electronic display and is a suitable transparent conductive material. Each of the first and second diode-like elements includes an amorphous metal non-linear resistor. The active pixel element may include one of liquid crystal display circuitry, light emitting diode circuitry, and electrophoretic circuitry.

Abstract: Described herein are various amorphous metal thin film transistors. Embodiments of such transistors include an amorphous metal gate electrode and a channel conductor formed on a non-conducting substrate. Further embodiments of such transistors include an amorphous metal source electrode, an amorphous metal drain electrode, and a channel conductor formed on a non-conducting substrate. Methods of forming such transistors are also described.

Abstract: A milling machine may have a frame, first and second ground engagement members connected through respective, vertically adjustable leg columns to a front end of the frame, and third and fourth ground engagement members connected through respective, vertically adjustable leg columns to a rear end of the frame. Each vertically adjustable leg column includes a hydraulic cylinder connecting the frame and the associated ground engagement member. A milling drum is attached to the frame between the front and rear ends. At least one pair of the leg columns connected to the front end of the frame or the leg columns connected to the rear end of the frame includes an accumulator associated with each of the at least one pair of leg columns, a fluid conduit fluidly connecting a bore end of each of the hydraulic cylinders to the associated accumulator, and a control valve disposed in the fluid conduit and configured to control a flow of fluid between the hydraulic cylinders and the associated accumulators.

Abstract: Amorphous multi-component metallic films can be used to improve the performance of electronic devices such as resistors, diodes, and thin film transistors. An amorphous hot electron transistor (HET) having co-planar emitter and base electrodes provides electrical properties and performance advantages over existing vertical HET structures. Emitter and the base terminals of the transistor are both formed in an upper crystalline metal layer of an amorphous nonlinear resistor. The emitter and the base are adjacent to one another and spaced apart by a gap. The presence of the gap results in two-way Fowler-Nordheim tunneling between the crystalline metal layer and the amorphous metal layer, and symmetric I-V performance. Meanwhile, forming the emitter and base terminals in the same layer simplifies the HET fabrication process by reducing the number of patterning steps.

Abstract: The invention relates to compositions comprising Quorum-Sensing (QS) modulating molecules attached to a surface via a linker. This QS modulator attached surface can then be used to modulate QS, biofilm production, biofilm streamer production and/or virulence factor production. The length of the linker that attaches the QS modulating molecule to the surface as well as the surface coverage density impact QS modulation on surfaces. These QS modulator attached surfaces can be used to treat areas known to contain human pathogens notorious for causing hospital-acquired infections as well as fatal infections that occur outside of health care settings. Other surfaces that can be coated according to embodiments of the invention include abiotic materials, such as intravenous catheters, implants, medical devices, and cooling towers. Preferred microorganisms that can be treated with the compositions of the invention include, but are not limited to S. aureus and/or P. aeruginosa.

Abstract: Amorphous multi-component metallic films can be used to improve the performance of electronic components such as resistors, diodes, and thin film transistors. Interfacial properties of AMMFs are superior to those of crystalline metal films, and therefore electric fields at the interface of an AMMF and an oxide film are more uniform. An AMMF resistor (AMNR) can be constructed as a three-layer structure including an amorphous metal, a tunneling insulator, and a crystalline metal layer. By modifying the order of the materials, the patterns of the electrodes, and the size and number of overlap areas, the I-V performance characteristics of the AMNR are adjusted. A non-coplanar AMNR has a five-layer structure that includes three metal layers separated by metal oxide tunneling insulator layers, wherein an amorphous metal thin film material is used to fabricate the middle electrodes.

Abstract: Amorphous multi-component metallic films can be used to improve the performance of electronic components such as resistors, diodes, and thin film transistors. Interfacial properties of AMMFs are superior to those of crystalline metal films, and therefore electric fields at the interface of an AMMF and an oxide film are more uniform. An AMMF resistor (AMNR) can be constructed as a three-layer structure including an amorphous metal, a tunneling insulator, and a crystalline metal layer. By modifying the order of the materials, the patterns of the electrodes, and the size and number of overlap areas, the I-V performance characteristics of the AMNR are adjusted. A non-coplanar AMNR has a five-layer structure that includes three metal layers separated by metal oxide tunneling insulator layers, wherein an amorphous metal thin film material is used to fabricate the middle electrodes.