Abstract: An extreme ultraviolet (EUV) generation device includes a housing module including a housing body whose inside is maintained in a vacuum state and an exit window formed on one side of the housing body, a laser source which emits lasers toward the inside of the housing body through the exit window, a plasma generation module which is located inside the housing body and generates plasma by allowing the lasers to be emitted toward a plasma gas, which flows into a laser focal area, and a radio frequency (RF) power supply module which preionizes the plasma gas before the plasma gas flows into the laser focal area.

Abstract: Disclosed are an apparatus and method for displaying a rear image of a vehicle. The apparatus for displaying a rear image of a vehicle includes a rear camera configured to capture a rear image of the vehicle, a steering angle sensor configured to sense a steering angle of a steering wheel, a display unit, and an image processing unit configured to convert the rear image captured by the rear camera when the vehicle moves backward into an image in a direction where the vehicle is to move backward according to the steering angle of the steering wheel that is sensed by the steering angle sensor, and display the converted image in the direction where the vehicle is to move backward through the display unit.

Abstract: Provided are a method and an apparatus for inspecting an extreme ultraviolet (EUV) mask at a high speed with high optical efficiency, and a method of manufacturing the EUV mask, wherein the method of inspecting the EUV mask is included in the method of manufacturing the EUV mask. The apparatus for inspecting the EUV mask includes a light source configured to generate and output light, a linear zone plate configured to convert the light from the light source to light having a linear form, a slit plate configured to output the light having the linear form by removing a higher-order diffracted light component from the light having the linear form, a stage on which the EUV mask is located, and a detector configured to detect the light reflected from the EUV mask, in response to the light being irradiated onto and reflected from the EUV mask.

Abstract: A method of manufacturing an integrated circuit (IC) device includes forming a photoresist layer on a substrate, and exposing the photoresist layer to light by using a photolithographic apparatus including a light generator. The light generator includes a chamber having a plasma generation space, an optical element in the chamber, and a debris shielding assembly between the optical element and the plasma generation space in the chamber, and the debris shielding assembly includes a protective film facing the optical element and being spaced apart from the optical element with a protective space therebetween, the protective space including an optical path, and a protective frame to support the protective film and to shield the protective space from the plasma generation space.

Abstract: An inspection apparatus includes a light source. A first measurement unit is configured to receive light from the light source and direct it to a first measurement object. A second measurement unit is configured to receive the light from the light source and direct it to a second measurement object. An inspection unit is configured to receive a first optical signal provided from the first measurement unit and inspect the first measurement object using the first optical signal, and to receive a second optical signal provided from the second measurement unit and inspect the second measurement object using the second optical signal. A measurement position selection unit is configured to alternately enable the inspection of the two measurement units by adjusting an angle of a reflection mirror.

Abstract: Manufacturing a device may include inspecting a surface of an inspection target device. The inspecting may include forming a metal layer on a surface of the inspection target device on which a minute pattern is formed, directing a beam of light to be incident and normal to the surface of the inspection target device, determining a spectrum of light reflected from the surface of the inspection target device, and generating, via the spectrum, information associated with a structural characteristic of the minute pattern formed on the inspection target device. The inspection target device may be selectively incorporated into the manufactured device based on the generated information.

Abstract: A clock signal generator includes an optic mirror rotatable to scan an incident light beam in a first direction, a grid plate including a plurality of grid arrays arranged in a second direction different from the first direction, wherein light reflected from the optic mirror is selectively passed through when the light beam is scanned on the grid plate in the first direction, the grid array being offset in the first direction by a particular distance with respect to an adjacent grid array, a light detector configured to detect a light passing through the grid arrays, and a pixel clock generator configured to generate a clock signal based on detection signals received from the light detector.

Abstract: There are provided a method of forming a nanorod structures and a method of forming a semiconductor device. The method of forming a semiconductor device may include forming a first seed pattern on a substrate; forming a first nanorod structure on the first seed pattern; and forming a molded structure surrounding a first lateral surface of the first nanorod structure while exposing a first upper surface of the first nanorod structure. The first nanorod structure may include a plurality of nanorods stacked sequentially on the first seed pattern. The plurality of nanorods may include a lowermost nanorod grown from the first seed pattern, and upper nanorods formed on the lowermost nanorod. The molded structure may include a lowermost molded layer surrounding a second lateral surface of the lowermost nanorod, and upper molded layers stacked sequentially on the lowermost molded layer. The upper molded layers may be formed of different materials.

Abstract: Provided are an atomic emission spectrometer (AES), which may be downscaled with high detection intensity, a semiconductor manufacturing facility including the AES, and a method of manufacturing a semiconductor device using the AES. The AES includes: at least one laser generator configured to generate laser beams; a chamber including an elliptical or spherical mirror disposed inside the chamber and configured to reflect the laser beams transmitted into the chamber so that the laser beams are condensed and irradiated on an analyte contained in the chamber to generate plasma and emit plasma light; a supplier connected to the chamber to supply the analyte into the chamber; and a spectrometer configured to receive and analyze the plasma light, and obtain data regarding the plasma light to detect elements in the analyte.

Abstract: An inspection apparatus includes a light source. A first measurement unit is configured to receive light from the light source and direct it to a first measurement object. A second measurement unit is configured to receive the light from the light source and direct it to a second measurement object. An inspection unit is configured to receive a first optical signal provided from the first measurement unit and inspect the first measurement object using the first optical signal, and to receive a second optical signal provided from the second measurement unit and inspect the second measurement object using the second optical signal. A measurement position selection unit is configured to alternately enable the inspection of the two measurement units by adjusting an angle of a reflection mirror.

Abstract: A surface inspecting method includes: irradiating an incident light beam of a first polarized state on a target object, the incident light beam comprising parallel light and having a cross-sectional area: measuring a second polarized state of a reflected light beam reflected from the target object; and performing inspection on an entire area of the target object on which the incident light beam is irradiated, based on a variation between the first polarized state and the second polarized state.

Abstract: Provided are a plasma light source capable of solving a problem occurring when an arc discharge lamp is used and an inspection apparatus capable of providing uniform and high-brightness plasma light. The plasma light source includes a pulse laser generator configured to generate a pulse laser beam, a continuous wave (CW) laser generator configured to generate an infrared ray (IR) CW laser beam, a first dichroic mirror configured to transmit or reflect the pulse laser beam and reflect or transmit the IR CW laser beam, a chamber configured to receive the pulse laser beam to ignite plasma and the IR CW laser beam to maintain the plasma in an ignited state, and discharge plasma light generated by the plasma, and a second dichroic mirror configured to transmit the pulse laser beam and the IR CW laser beam and reflect the plasma light.

Abstract: An optical inspection apparatus includes a broadband light source, a monochromator, an image obtaining apparatus, and an analysis device. The monochromator is configured to convert light from the broadband light source into a plurality of monochromatic beams of different wavelengths and sequentially output the monochromatic beams, where each beam has a preset wavelength width and corresponds to one of a plurality of different wavelength regions. The image obtaining apparatus is configured to allow each monochromatic beam output from the monochromator to be incident to a top surface of an inspection target without using a beam splitter, allow light reflected by the inspection target to travel in a form of light of an infinite light source, and generate 2D images of the inspection target. The analysis device is configured to analyze the 2D images of the inspection target in the plurality of wavelength regions.

Abstract: A wafer inspection apparatus includes a linear stage configured to support a chuck on which a wafer is disposed and to move the chuck along a guide rail, wherein the guide rail extends in a first direction, an image sensor module overlapping the linear stage, and a rotary stage supported by the linear stage. The rotary stage is configured to rotate the chuck in a state where a center of the wafer is aligned with the image sensor module. The image sensor module includes a light source directing light onto the wafer, and an image sensor extending in a second direction crossing the first direction.

Abstract: An automatic focus control apparatus includes a light detector, which receives light reflected by a surface of a wafer and generates a light reception signal based on the received signal, a controller, which generates a driving signal, the driving signal being one of a first signal and a second signal, the driving signal indicating whether to perform automatic focus control based on the light reception signal, a focus error corrector, which generates a focus error correction signal based on the driving signal, and a stage driver, which displaces a wafer stage supporting the wafer by adjusting the z-axis position of the wafer stage based on the focus error correcting signal if the driving signal is the first signal, and maintains the z-axis position of the wafer stage based on the focus error correction signal if the driving signal is the second signal.

Abstract: An optical transformation module includes a light generator generating a parallel light beam to be incident onto a surface of an inspection object and changing a wavelength of the parallel light beam, and a rotating grating positioned on a path of the parallel light beam and rotatable by a predetermined rotation angle such that the parallel light beam is transformed according to the wavelength of the parallel light beam and the rotation angle of the rotating grating to have a desired incidence angle and a desired incidence position onto the surface of the inspection object.

Abstract: Manufacturing a device may include inspecting a surface of an inspection target device. The inspecting may include forming a metal layer on a surface of the inspection target device on which a minute pattern is formed, directing a beam of light to be incident and normal to the surface of the inspection target device, determining a spectrum of light reflected from the surface of the inspection target device, and generating, via the spectrum, information associated with a structural characteristic of the minute pattern formed on the inspection target device. The inspection target device may be selectively incorporated into the manufactured device based on the generated information.

Abstract: A plasma light source apparatus includes a first laser generator configured to generate a first laser. A second laser generator is configured to generate a second laser. A chamber is configured to accommodate and seal a medium material for plasma ignition and to allow plasma to be ignited by the first laser and to be maintained by the second laser. An inner surface of the chamber includes two curved mirrors that face each other.

Abstract: A clock signal generator includes an optic mirror rotatable to scan an incident light beam in a first direction, a grid plate including a plurality of grid arrays arranged in a second direction different from the first direction, wherein light reflected from the optic mirror is selectively passed through when the light beam is scanned on the grid plate in the first direction, the grid array being offset in the first direction by a particular distance with respect to an adjacent grid array, a light detector configured to detect a light passing through the grid arrays, and a pixel clock generator configured to generate a clock signal based on detection signals received from the light detector.

Abstract: An optical inspecting apparatus includes a first light source, a beam splitter, a first lens, a first light detector, and pinhole plates. The first light source emits a first light beam. The beam splitter transmits or reflects the first light beam. The first lens provides the first light beam to transmit through a transparent substrate of a photomask and forms a first focusing spot on a first surface of the transparent substrate or a top surface of a photomask pattern formed on the transparent substrate. The first light detector detects a first reflection light beam generated by reflecting the first light beam from the first surface of the transparent substrate or the top surface of the photomask pattern. The pinhole plates are disposed in front of the first light detector to filter noise in the reflection light beam.