Abstract: A gate driver for a liquid crystal display includes a shift register including a plurality of stages for outputting gate drive signals. Each of the stages includes a pull-up circuit for providing the gate drive signal to an output terminal in response to first and second clock signals, a pull-down circuit for providing a gate off signal to the output terminal, a pull-up driving circuit for driving the pull-up circuit in response to a first control signal, and a pull-down driving circuit for driving the pull-down circuit in response to a second control signal. Each of the stages includes a plurality of switching devices. A node of nodes where a signal line, through which the first clock signal, the second clock signal, the first control signal or the second control signal is applied, is electrically connected to a switching device includes at least two contacts.

Abstract: A thin film array panel is provided, which includes: a gate line formed on a substrate; a first insulating layer formed on the gate line; a semiconductor layer formed on the gate insulating layer; a data line formed on the gate insulating layer and intersecting the gate line; a drain electrode formed at least on the semiconductor layer; a conductor arranged in parallel to the data line; a second insulating layer formed on the data line, the drain electrode, and the conductor and having a first contact hole exposing a portion of the drain electrode; and a pixel electrode formed on the second insulating layer, connected to the drain electrode through the first contact hole, fully covering the data line.

Abstract: A shift register includes a plurality of stages to output a plurality of output signals, in sequence. Each of the stages includes a driving part and a discharging part. The driving part outputs an output signal of a present stage based on one of a start signal and an output signal of a previous stage, and a clock signal. The discharging part discharges the output signal of the present stage. The discharging part includes a discharge transistor and an auxiliary transistor. The discharge transistor has a gate electrode receiving an output signal of a next stage. The auxiliary transistor has a gate electrode receiving the output signal of the next stage. The auxiliary transistor is electrically connected in series to the discharge transistor. Therefore, the chance of a malfunction is decreased, and image display quality of the display device is improved.

Abstract: A thin film transistor (“TFT”) display plate, capable of reducing a load on a gate line, increasing an aperture ratio and preventing light leakage, includes an insulating substrate, a gate line formed on the insulating substrate, a storage electrode line spaced apart from the gate line and formed on an insulating substrate, a data line insulated from the gate line and the storage electrode line and intersecting the gate line, a pixel electrode formed for each pixel defined by the gate line and the data line, a thin film transistor (“TFT”) connected to the gate line and the data line to apply a voltage to the pixel electrode, and a storage electrode formed on the same layer as the data line and connected to the storage electrode line to form one terminal of a storage capacitor along with the pixel electrode as the other terminal of the storage capacitor.

Abstract: A liquid crystal display (“LCD”) includes a data interconnection line including a data line, a source electrode as a branch of the data line, and a drain electrode formed spaced apart from the source electrode, a semiconductor layer formed under the data interconnection line and connected to the source electrode and the drain electrode below the source electrode and the drain electrode and forming a channel region, and a gate interconnection line formed under the semiconductor layer and including a gate line intersecting the data line, the gate line extending in a first direction and the data line extending in a second direction, and a gate electrode branched from the gate line, wherein the gate line includes a first recess having a first width and a first length.

Abstract: The present invention relates to a thin film transistor (TFT) substrate and method of making such a TFT substrate. The structure of the TFT substrate helps prevent damage to signal lines in non-display areas.

Abstract: The present invention relates to a thin film transistor substrate including a shift register disposed at a first side of a non-display area, a gate line disposed to traverse a display area of the TFT substrate, a data line disposed to traverse the display area and cross the gate line, and a diode. The gate line has a first end and a second end. The first end is electrically coupled to the shift register. The diode is electrically coupled to the second end of the gate line and disposed at a second side of the non-display area. The diode prevents an exterior current from being introduced to the gate line at the second end.

Abstract: A gate driving portion comprises a plurality of stages. Each stage comprises a first driving portion and a second driving portion. The first driving portion generates first and second output signals according to first input signals, and the second driving portion is connected to the first driving portion and generates third and fourth output signals according to second input signals. The first and second output signals are a first carry output signal or a first gate output signal of a current stage, and the third and fourth output signals are a second carry output signal or a second gate output signal of a following stage. According to this configuration, each stage generates two or more gate output signals and the gate driving portion outputs the first and second gate output signals to corresponding gate lines. Accordingly, the present invention can reduce the area of the gate driving portion and provide a high resolution of LCD device.

Abstract: A thin film array panel is provided, which includes: a gate line formed on a substrate; a first insulating layer formed on the gate line; a semiconductor layer formed on the gate insulating layer; a data line formed on the gate insulating layer and intersecting the gate line; a drain electrode formed at least on the semiconductor layer; a conductor arranged in parallel to the data line; a second insulating layer formed on the data line, the drain electrode, and the conductor and having a first contact hole exposing a portion of the drain electrode; and a pixel electrode formed on the second insulating layer, connected to the drain electrode through the first contact hole, fully covering the data line.