Abstract: A semiconductor device is provided. The semiconductor device comprising a multi-channel active pattern on a substrate, a high dielectric constant insulating layer formed along the multi-channel active pattern on the multi-channel active pattern, wherein the high dielectric constant insulating layer comprises a metal, a silicon nitride layer formed along the high dielectric constant insulating layer on the high dielectric constant insulating layer and a gate electrode on the silicon nitride layer.

Abstract: A semiconductor device according to an example embodiment of the present inventive concept includes a substrate having a first region and a second region horizontally separate from the first region; a first gate line in the first region, the first gate line including a first lower work function layer and a first upper work function layer disposed on the first lower work function layer; and a second gate line including a second lower work function layer in the second region, the second gate line having a width in a first, horizontal direction equal to or narrower than a width of the first gate line in the first direction, wherein an uppermost end of the first upper work function layer and an uppermost end of the second lower work function layer are each located at a vertical level higher than an uppermost end of the first lower work function layer with respect to a second direction perpendicular to the first direction.

Abstract: A semiconductor device and method for fabricating the same are provided. The semiconductor device includes a substrate, a first active pattern disposed on the substrate and spaced apart from the substrate, a gate insulating film which surrounds the first active pattern, a first work function adjustment film which surrounds the gate insulating film and includes carbon, and a first barrier film which surrounds the first work function adjustment film, in which a carbon concentration of the first work function adjustment film increases as it goes away from the first barrier film.

Abstract: Disclosed is a vehicle seat with a side airbag, which includes an airbag module with an airbag cushion accommodated therein; a seat back frame with the airbag module mounted thereto; and a seat back pad provided with bolsters protruding forward at opposite sides thereof, with an accommodation space being formed in an outboard one of the bolsters by coupling the outboard bolster to the seat back frame, thereby allowing the airbag module to be accommodated therein, wherein the seat back pad includes a body part, and a guide part formed in an inboard portion of an inner surface of the outboard bolster to guide deployment of the airbag cushion, and the body part and the guide part are made of materials having different rigidity from each other.

Abstract: Provided are an integrated circuit device and a method of manufacturing the same. The integrated circuit device includes: a semiconductor substrate; a device isolation layer defining an active region of the semiconductor substrate; a gate insulating layer on the active region; a gate stack on the gate insulating layer; a spacer on a sidewall of the gate stack; and an impurity region provided on both sides of the gate stack, wherein the gate stack includes a metal carbide layer and a metal layer on the metal carbide layer, wherein the metal carbide layer includes a layer having a carbon content of about 0.01 at % to about 15 at %.

Abstract: Disclosed is a vehicle seat with a side airbag, which includes an airbag module with an airbag cushion accommodated therein, a seat back frame with the airbag module mounted thereto, a seat back pad provided with a bolster protruding forward at each of opposite sides thereof and an accommodation space allowing the airbag module to be accommodated therein; a bolster wire inserted into the bolster to support a side load of an occupant; and a side airbag guide configured such that a first side thereof is locked to the seat back frame and a second side thereof is coupled to the bolster wire, to guide a deployment direction of the airbag cushion.

Abstract: A semiconductor device includes an active region in a substrate, at least one nano-sheet on the substrate and spaced apart from a top surface of the active region, a gate above or below the nano-sheet, a gate insulating layer between the at least one nano-sheet and the gate, and source/drain regions on the active region at both sides of the at least one nano-sheet. The at least one nano-sheet includes a channel region; a gate disposed above or below the nano-sheet and including a single metal layer having different compositions of metal atoms of a surface and an inside thereof; a gate insulating layer between the nano-sheet and the gate; and source/drain regions disposed in the active region of both sides of the at least one nano-sheet.

Abstract: A semiconductor device and method for fabricating the same are provided. The semiconductor device includes a substrate, a first active pattern disposed on the substrate and spaced apart from the substrate, a gate insulating film which surrounds the first active pattern, a first work function adjustment film which surrounds the gate insulating film and includes carbon, and a first barrier film which surrounds the first work function adjustment film, in which a carbon concentration of the first work function adjustment film increases as it goes away from. the first barrier film.

Abstract: A method of fabricating an organic field effect transistor (OFET), including forming a source contact, a drain contact, and a gate connection to a channel comprising semiconducting polymers, wherein the gate connection applies a field to the semiconductor polymers across a dielectric layer to modulate conduction along the semiconducting polymers between the source contact and the drain contact; and treating the semiconducting polymers, wherein the treating includes a chemical treatment that controls a carrier density, carrier mobility, threshold voltage, and/or contact resistance of the OFET.

Abstract: A semiconductor device includes a gate insulating layer disposed on a substrate, a first work function tuning layer disposed on the gate insulating layer, a lower barrier conductive layer on and in contact with the first work function tuning layer, and an upper barrier conductive layer on and in contact with the lower barrier conductive layer. The upper barrier conductive layer and the lower barrier conductive layer include a material in common, e.g., they may each include a titanium nitride (TiN) layer.

Abstract: An organic device, including semiconducting polymers processed from a solution cast on one or more dielectric layers on a substrate; and electrical contacts to the semiconducting polymers, wherein the substrate and the one or more dielectric layers are flexible and the semiconducting polymers are aligned. The one or more dielectric layers can increase mobility of the semiconducting polymers and/or alignment of the semiconducting polymers with one or more of the nanogrooves in the dielectric layers.

Abstract: Disclosed is a vehicle seat with a side airbag, which includes an airbag module with an airbag cushion accommodated therein, a seat back frame with the airbag module mounted thereto, a seat back pad provided with a bolster protruding forward at each of opposite sides thereof and an accommodation space allowing the airbag module to be accommodated therein; a bolster wire inserted into the bolster to support a side load of an occupant; and a side airbag guide configured such that a first side thereof is locked to the seat back frame and a second side thereof is coupled to the bolster wire, to guide a deployment direction of the airbag cushion.

Abstract: Disclosed is a vehicle seat with a side airbag, which includes an airbag module with an airbag cushion accommodated therein; a seat back frame with the airbag module mounted thereto; and a seat back pad provided with bolsters protruding forward at opposite sides thereof, with an accommodation space being formed in an outboard one of the bolsters by coupling the outboard bolster to the seat back frame, thereby allowing the airbag module to be accommodated therein, wherein the seat back pad includes a body part, and a guide part formed in an inboard portion of an inner surface of the outboard bolster to guide deployment of the airbag cushion, and the body part and the guide part are made of materials having different rigidity from each other.

Abstract: Disclosed herein is a photodetector utilizing graphene. A single-layer graphene channel is formed on a semiconductor substrate doped with n-type impurity. The graphene channel has an end connected to a source electrode and is physically separated from a drain electrode. Light having passed through a gate insulation layer and a gate electrode generates electron-hole pairs at the interface between the graphene channel and the semiconductor substrate forming a Schottky junction, and a photocurrent is generated by a Schottky barrier. In addition, the Schottky barrier is changed according to an applied gate voltage, thereby changing the photocurrent.

Abstract: Provided are apparatus and system for pest detection and a method for detecting pest damage to prevent pest damage in wooden building structures. The apparatus according to one aspect of the present invention comprises: a post-shaped main body extending in a set direction and formed therealong, and comprising a plurality of holes distanced from each other with a wall therebetween, the wall comprising timber which can be despoiled by pest; and a sensor unit allowing attachment and detachment to and from the upper end of the main body. Here, the sensor unit may comprise: a light-emitting unit comprising at least one light-emitting body for irradiating the interior of at least one hole among the plurality of holes; a sensing unit for sensing the light, emitted from the light-emitting unit, in the interior of at least one hole from among the plurality of holes; and a detection unit for outputting a light signal received from the sensing unit as an electrical signal.

Abstract: One or more embodiments of the present invention report here a comparative study of field effect transistors (FETs) fabricated with semiconducting polymer PBT, regioregular semiconducting polymers, PCDTPT and their fluorinated analogue (P2F, PCDTFBT), in the transistor channel. The present invention shows that simple fluorination of PBT and PCDTPT to PCDTFBT leads to air-stability and reliable transistor characteristics. The FETs fabricated from aligned PCDTFBT yielded stable threshold voltages (at zero volt) and a narrow distribution of saturation hole mobilities of 65 cm2 V?1 s?1 (average over 50 independent FET devices). At higher source-drain voltage (higher electric field in the channel) the mobility approaches 100 cm2 V?1 s?1, the highest value for semiconducting polymers reported to date. High mobility is retained over 150 hours in ambient air without any encapsulation layers.

Abstract: A method of fabricating an organic field effect transistor (OFET), including forming a source contact, a drain contact, and a gate connection to a channel comprising semiconducting polymers, wherein the gate connection applies a field to the semiconductor polymers across a dielectric layer to modulate conduction along the semiconducting polymers between the source contact and the drain contact; and treating the semiconducting polymers, wherein the treating includes a chemical treatment that controls a carrier density, carrier mobility, threshold voltage, and/or contact resistance of the OFET.

Abstract: A method for operating semiconductor manufacturing equipment is provided. The method includes forming a conductive thin film on an inner side surface of a reaction chamber and on a substrate in the reaction chamber, the conductive thin film including a first conductive material, and forming a particle preventive layer on the inner side surface of the reaction chamber in which the conductive thin film is formed.

Abstract: An organic device, including semiconducting polymers processed from a solution cast on one or more dielectric layers on a substrate; and electrical contacts to the semiconducting polymers, wherein the substrate and the one or more dielectric layers are flexible and the semiconducting polymers are aligned. The one or more dielectric layers can increase mobility of the semiconducting polymers and/or alignment of the semiconducting polymers with one or more of the nanogrooves in the dielectric layers.

Abstract: Provided are apparatus and system for pest detection and a method for detecting pest damage to prevent pest damage in wooden building structures. The apparatus according to one aspect of the present invention comprises: a post-shaped main body extending in a set direction and formed therealong, and comprising a plurality of holes distanced from each other with a wall therebetween, the wall comprising timber which can be despoiled by pest; and a sensor unit allowing attachment and detachment to and from the upper end of the main body. Here, the sensor unit may comprise: a light-emitting unit comprising at least one light-emitting body for irradiating the interior of at least one hole among the plurality of holes; a sensing unit for sensing the light, emitted from the light-emitting unit, in the interior of at least one hole from among the plurality of holes; and a detection unit for outputting a light signal received from the sensing unit as an electrical signal.