Abstract: The present invention discloses a method for manufacturing a flash memory device including the steps of: sequentially forming a first polysilicon film for a floating gate electrode, a first oxide film, a polysilicon film for a hard mask and a second oxide film on a semiconductor substrate; etching and patterning the second oxide film and the polysilicon film for the hard mask, by forming photoresist patterns on a predetermined region of the second oxide film, and removing the photoresist patterns; forming spacers on the sidewalls of the polysilicon film for the hard mask, by forming and etching a polysilicon film for forming spacers on the whole surface of the resulting structure; removing the exposed first oxide film and a predetermined thickness of second oxide film formed on the patterned polysilicon film for the hard mask; forming floating gate electrode patterns by performing first and second etching processes by using the patterned polysilicon film for the hard mask and the spacers as an etch mask; perf

Abstract: The present invention relates to a method for manufacturing a flash memory device. In a flash memory device using a self-aligned shallow trench isolation (SA-STI) scheme, an amorphous silicon layer is formed on a gate oxide film and a SPG process is implemented to change the amorphous silicon layer to a first polysilicon layer having large grains. It is thus possible to improve a thinning condition of the gate oxide film.

Abstract: Gate oxides having different thicknesses are formed on a semiconductor substrate by forming a first gate oxide on the top surface of the substrate, forming a sacrificial hard mask over a selected area of the first gate oxide; and then forming a second gate oxide. A first poly layer may be formed on the first gate oxide, under the hard mask. After the hard mask is removed, a second poly layer may be formed over the second gate oxide and over the first poly layer. This enables the use of high-k dielectric materials, and the first gate oxide can be thinner than the second gate oxide.

Abstract: A refrigerator having a main body, and a compressor and an evaporator in the main body, comprises a heat pipe forming a closed loop so as to allow the refrigerant to be circulated therein; a first heat exchanger provided in the heat pipe, absorbing heat generated from the compressor; a second heat exchanger provided in an upper part between the heat pipe and the first heat exchanger adjacent to the evaporator, discharging heat into the evaporator; and a control valve positioned between the first and second heat exchangers, opening and closing the heat pipe, wherein the refrigerant cooled and liquified in the second heat exchanger forces out the refrigerant heated and gasified in the first heat exchanger by gravity, when the control valve is opened.

Abstract: A laminated low pass filter including a dielectric block having a plurality of laminated dielectric layers, input and output electrodes and outer ground electrodes formed on outer side surfaces of the dielectric block, so as to pass therethrough a signal inputted to the outer input electrode, only in a low frequency band, and then to output the passed signal to the outer output electrode. The laminated low pass filter also includes a transmission line including a distributed constant element made of a strip line formed on a first one of the dielectric layers, while being uniformly distributed with an inductance and a capacitance, the distributed constant element being connected between the input electrode and the output electrode, and a capacitor electrode structure having at least two layers while being connected between the input electrode and the output electrode. The capacitance electrode structure forms a capacitance connected in parallel to the transmission line.

Abstract: An L-threonine-producing Escherichia coli strain and a method for producing the same are provided. The Escherchia coli strain contains chromosomal DNA with inactivated metJ gene. Therefore, expression repression of threonine biosynthesis genes by a metJ gene product is prevented, thereby producing a high concentration of threonine. Further, a high concentration of L-threonine can be produced in high yield using the method.

Abstract: Disclosed is a method and system of forming an integrated circuit transistor having a reduced gate height that forms a laminated structure having a substrate, a gate conductor above the substrate, and at least one sacrificial layer above the gate conductor. The process patterns the laminated structure into at least one gate stack extending from the substrate, forms spacers adjacent to the gate stack, dopes regions of the substrate not protected by the spacers to form source and drain regions adjacent the gate stack, and removes the spacers and the sacrificial layer.

Abstract: A method and structure for a CMOS device comprises depositing a silicon over insulator (SOI) wafer over a buried oxide (BOX) substrate, wherein the SOI wafer has a predetermined thickness; forming a gate dielectric over the SOI wafer; forming a shallow trench isolation (STI) region over the BOX substrate, wherein the STI region is configured to have a generally rounded corner; forming a gate structure over the gate dielectric; depositing an implant layer over the SOI wafer; performing one of N-type and P-type dopant implantations in the SOI wafer and the implant layer; and heating the device to form source and drain regions from the implant layer and the SOI wafer, wherein the source and drain regions have a thickness greater than the predetermined thickness of the SOI wafer, wherein the gate dielectric is positioned lower than the STI region.

Abstract: An ice dispenser for a refrigerator includes an ice reservoir mounted inside the refrigerator, an ice supplier disposed within the ice reservoir, a cavity mounted in a refrigerator door, an ice supply tube communicating the ice reservoir with the cavity, a damper door for opening and closing the ice supply tube, and an elastic member biasing the damper door toward the ice supply tube closing position. A mounting lever pivotally fixed on the cavity, a damper door opening lever extending from an extreme end of the mounting lever to one side of the damper door, a switch operating lever extending from the extreme end of the mounting lever, and a switch operated by a pivotal movement of the switch operating lever are provided. A retardation means for retarding the return of the damper door to the closed position for a predetermined time after pieces of ice are dispensed out of the cavity and the switch is turned OFF is also provided.