Patents by Inventor Byueng Su Yoo
Byueng Su Yoo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230369826Abstract: A vertical-cavity surface-emitting laser (VCSEL) including a substrate including a plurality of emitters forming an array region, a lower mirror, an upper mirror, an active layer interposed between the lower mirror and the upper mirror, an aperture forming layer interposed between the upper mirror and the active layer and including an oxidation region and a window region, a connector disposed on the upper mirror, a plurality of oxidation holes passing through the upper mirror and the aperture forming layer, an upper insulation layer covering the plurality of oxidation holes, and a pad electrically connected to the connector, in which at least a portion of the connector is disposed in the plurality of oxidation holes, and the plurality of emitters is disposed in substantially a honeycomb shape on the substrate.Type: ApplicationFiled: July 24, 2023Publication date: November 16, 2023Inventors: Ki Hwang LEE, Jeong Rae RO, Byueng Su YOO, Yoon Sang JEON, Gong Hee CHOI
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Patent number: 11764545Abstract: A vertical-cavity surface-emitting laser (VCSEL) including a substrate including a plurality of emitters forming an array region, a lower mirror, an upper mirror, an active layer interposed between the lower mirror and the upper mirror, an aperture forming layer interposed between the upper mirror and the active layer and including an oxidation region and a window region, a connector disposed on the upper mirror, a plurality of oxidation holes passing through the upper mirror and the aperture forming layer, an upper insulation layer covering the plurality of oxidation holes, and a pad electrically connected to the connector, in which at least a portion of the connector is disposed in the plurality of oxidation holes, the plurality of emitters is disposed in substantially a honeycomb shape on the substrate, and the pad is formed on one side of the substrate adjacent to the array region.Type: GrantFiled: July 31, 2022Date of Patent: September 19, 2023Assignee: Seoul Viosys Co., Ltd.Inventors: Ki Hwang Lee, Jeong Rae Ro, Byueng Su Yoo, Yoon Sang Jeon, Gong Hee Choi
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Patent number: 11764544Abstract: A vertical-cavity surface-emitting laser (VCSEL) including a lower mirror, an upper mirror, an active layer interposed between the lower mirror and the upper mirror, an aperture forming layer interposed between the upper mirror and the active layer, and including an oxidation layer and a window layer surrounded by the oxidation layer, a ring-shaped trench passing through the upper mirror, the aperture forming layer, and the active layer to define an isolation region therein, and a plurality of oxidation holes disposed in the isolation region surrounded by the trench, and passing through the upper mirror and the aperture forming layer.Type: GrantFiled: February 21, 2020Date of Patent: September 19, 2023Assignee: Seoul Viosys Co., Ltd.Inventors: Ki Hwang Lee, Byueng Su Yoo, Jeong Rae Ro
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Publication number: 20220368106Abstract: A vertical-cavity surface-emitting laser (VCSEL) including a substrate including a plurality of emitters forming an array region, a lower mirror, an upper mirror, an active layer interposed between the lower mirror and the upper mirror, an aperture forming layer interposed between the upper mirror and the active layer and including an oxidation region and a window region, a connector disposed on the upper mirror, a plurality of oxidation holes passing through the upper mirror and the aperture forming layer, an upper insulation layer covering the plurality of oxidation holes, and a pad electrically connected to the connector, in which at least a portion of the connector is disposed in the plurality of oxidation holes, the plurality of emitters is disposed in substantially a honeycomb shape on the substrate, and the pad is formed on one side of the substrate adjacent to the array region.Type: ApplicationFiled: July 31, 2022Publication date: November 17, 2022Inventors: Ki Hwang LEE, Jeong Rae Ro, Byueng Su Yoo, Yoon Sang Jeon, Gong Hee Choi
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Patent number: 11404848Abstract: A vertical-cavity surface-emitting laser (VCSEL) including a lower mirror, an upper mirror having an insulation region including implanted ions and an isolation region surrounded by the insulation region, an active layer interposed between the lower mirror and the upper mirror, an aperture forming layer interposed between the upper mirror and the active layer, and including an oxidation layer and a window layer surrounded by the oxidation layer, and a plurality of oxidation holes disposed in the isolation region and passing through the upper mirror and the aperture forming layer.Type: GrantFiled: December 19, 2019Date of Patent: August 2, 2022Assignee: Seoul Viosys Co., Ltd.Inventors: Ki Hwang Lee, Jeong Rae Ro, Byueng Su Yoo, Yoon Sang Jeon, Gong Hee Choi
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Publication number: 20200280175Abstract: A vertical-cavity surface-emitting laser (VCSEL) including a lower mirror, an upper mirror, an active layer interposed between the lower mirror and the upper mirror, an aperture forming layer interposed between the upper mirror and the active layer, and including an oxidation layer and a window layer surrounded by the oxidation layer, a ring-shaped trench passing through the upper mirror, the aperture forming layer, and the active layer to define an isolation region therein, and a plurality of oxidation holes disposed in the isolation region surrounded by the trench, and passing through the upper mirror and the aperture forming layer.Type: ApplicationFiled: February 21, 2020Publication date: September 3, 2020Inventors: Ki Hwang LEE, Byueng Su YOO, Jeong Rae RO
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Publication number: 20200203927Abstract: A vertical-cavity surface-emitting laser (VCSEL) including a lower mirror, an upper mirror having an insulation region including implanted ions and an isolation region surrounded by the insulation region, an active layer interposed between the lower mirror and the upper mirror, an aperture forming layer interposed between the upper mirror and the active layer, and including an oxidation layer and a window layer surrounded by the oxidation layer, and a plurality of oxidation holes disposed in the isolation region and passing through the upper mirror and the aperture forming layer.Type: ApplicationFiled: December 19, 2019Publication date: June 25, 2020Inventors: Ki Hwang Lee, Jeong Rae Ro, Byueng Su Yoo, Yoon Sang Jeon, Gong Hee Choi
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Publication number: 20070127533Abstract: Disclosed herein is a vertical cavity surface emitting laser device. The laser device comprises a semiconductor lower mirror layer, a first semiconductor electrode layer, a gain-activation layer and a semiconductor anode layer sequentially grown on the compound semiconductor substrate, a re-growth pattern formed on the semiconductor anode layer to a width of 10˜100 ?m and an etching depth equal to or less than the semiconductor anode layer by etching, a first anode semiconductor buffer layer grown at a low temperature on the pattern, a second anode semiconductor layer grown at the low temperature for formation of an oxide layer, an anode semiconductor layer for tunnel junction, a cathode semiconductor layer for tunnel junction, a second semiconductor electrode layer for injection of electrons, and an upper mirror layer formed on the second semiconductor electrode layer. With this structure, the laser device comprises an effective electric current confining structure.Type: ApplicationFiled: December 29, 2005Publication date: June 7, 2007Inventors: Byueng Su Yoo, Jay Roh, Seong Ju Park, Ki Hwang Lee
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Patent number: 6727109Abstract: The present invention relates to a method of fabricating vertical-cavity surface emitting lasers being watched as a light source for long wavelength communication. The present invention includes forming a layer having a high resistance near the surface by implanting heavy ions such as silicon (Si), so that the minimum current injection diameter is made very smaller unlike implantation of a proton. Further, the present invention includes regrowing crystal so that current can flow the epi surface in parallel to significantly reduce the resistance up to the current injection part formed by silicon (Si) ions. Therefore, the present invention can not only effectively reduce the current injection diameter but also significantly reduce the resistance of a device to reduce generation of a heat. Further, the present invention can further improve dispersion of a heat using InP upon regrowth and thus improve the entire performance of the device.Type: GrantFiled: July 31, 2002Date of Patent: April 27, 2004Assignee: Electronics and Telecommunications Research InstituteInventors: Young Gu Ju, Won Seok Han, O Kyun Kwon, Jae Heon Shin, Byueng Su Yoo, Jung Rae Ro
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Patent number: 6621843Abstract: Disclosed is a surface-emitting laser device which eliminates an absorption loss of a p-type doped layer and reduces a scattering loss in a mirror layer and a carrier loss due to a current induction, comprising a first conductive type of semiconductor substrate; a bottom mirror layer formed on the semiconductor substrate and composed of a first conductive type of semiconductor layer; an active layer formed on the bottom mirror layer; an electron leakage barrier layer formed on the active layer and having an energy gap larger than the active layer; a current induction layer formed on the electron leakage barrier layer and a second conductive type of semiconductor layer; a current extension layer formed on the current induction layer and composed of the second conductive type of semiconductor layer; and a top mirror layer formed on the current extension layer, wherein the top mirror layer includes undoped center portion and its both end having the second conductive type of dopant diffusion region.Type: GrantFiled: April 25, 2001Date of Patent: September 16, 2003Assignee: Electronics and Telecommunications Research InstituteInventors: Byueng-Su Yoo, O-Kyun Kwon, Young-Gu Ju
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Publication number: 20030134448Abstract: The present invention relates to a method of fabricating vertical-cavity surface emitting lasers being watched as a light source for long wavelength communication. The present invention includes forming a layer having a high resistance near the surface by implanting heavy ions such as silicon (Si), so that the minimum current injection diameter is made very smaller unlike implantation of a proton. Further, the present invention includes regrowing crystal so that current can flow the epi surface in parallel to significantly reduce the resistance up to the current injection part formed by silicon (Si) ions. Therefore, the present invention can not only effectively reduce the current injection diameter but also significantly reduce the resistance of a device to reduce generation of a heat. Further, the present invention can further improve dispersion of a heat using InP upon regrowth and thus improve the entire performance of the device.Type: ApplicationFiled: July 31, 2002Publication date: July 17, 2003Inventors: Young Gu Ju, Won Seok Han, O Kyun Kwon, Jae Heon Shin, Byueng Su Yoo, Jung Rae Ro
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Patent number: 6584136Abstract: A folded cavity laser for generating a laser beam, includes a substrate provided with a distributed Bragg reflector (DBR); an active medium formed above the DBR for amplifying the laser beam; a first and a second mirrors formed on sides of the active medium, respectively, for making a horizontal cavity and for reflecting the amplified laser beam to the DBR; and a microlens, formed on the substrate opposite the DBR, for making the amplified laser beam astigmatic after passing therethrough.Type: GrantFiled: June 15, 2001Date of Patent: June 24, 2003Assignee: Electronics and Telecommunications Research InstituteInventors: Young-Gu Ju, Byueng-Su Yoo, O-Kyun Kwon
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Publication number: 20030086463Abstract: A long-wavelength VCSEL is provided.Type: ApplicationFiled: January 23, 2002Publication date: May 8, 2003Inventors: Jae-Heon Shin, O-Kyun Kwon, Won-Seok Han, Young-Gu Ju, Byueng-Su Yoo
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Patent number: 6482665Abstract: A method of manufacturing a polarization switching surface-emitting laser in which a laser resonance wavelength depends on changing the polarization of the laser, by changing the refractivity of a compound semiconductor mirror layer of the laser depending on polarizations using an electro-optic effect of compound semiconductor materials such as GsAs and applying an electric field thereto.Type: GrantFiled: November 21, 2000Date of Patent: November 19, 2002Assignee: Electronics and Telecommunications Research InstituteInventors: Hye Yong Chu, Byueng-Su Yoo, Hyo-Hoon Park
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Patent number: 6475818Abstract: A method for fabricating a multi-channel array optical device having uniform spacing between different wavelengths and for having precise wavelengths by accomplishing wavelength adjustment and by the forming of mirror layers simultaneously through a multi-layer binary mask and a selective oxidization process. This method is especially useful for fabricating multi-channel array optical devices including multi-channel passive filters and multi-channel surface emitting laser arrays. The method includes forming a plurality of semiconductor mirror layers on a semiconductor substrate; forming an oxidization protective layer on the plurality of semiconductor mirror layers; selectively removing the oxidization protective layer by using a binary mask to expose the semiconductor mirror layer which will adjust a wavelength; oxidizing the exposed semiconductor mirror layer.Type: GrantFiled: February 4, 2000Date of Patent: November 5, 2002Assignee: Electronics and Telecommunications Research InstituteInventors: O Kyun Kwon, Byueng Su Yoo, Jae Heon Shin, Jong Heob Baek
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Publication number: 20020085612Abstract: A folded cavity laser for generating a laser beam, includes a substrate provided with a distributed Bragg reflector (DBR); an active medium formed above the DBR for amplifying the laser beam; a first and a second mirrors formed on sides of the active medium, respectively, for making a horizontal cavity and for reflecting the amplified laser beam to the DBR; and a microlens, formed on the substrate opposite the DBR, for making the amplified laser beam astigmatic after passing therethrough.Type: ApplicationFiled: June 15, 2001Publication date: July 4, 2002Inventors: Young-Gu Ju, Byueng-Su Yoo, O-Kyun Kwon
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Publication number: 20020075922Abstract: Disclosed is a surface-emitting laser device which eliminates an absorption loss of a p-type doped layer and reduces a scattering loss in a mirror layer and a carrier loss due to a current induction, comprising a first conductive type of semiconductor substrate; a bottom mirror layer formed on the semiconductor substrate and composed of a first conductive type of semiconductor layer; an active layer formed on the bottom mirror layer; an electron leakage barrier layer formed on the active layer and having an energy gap larger than the active layer; a current induction layer formed on the electron leakage barrier layer and a second conductive type of semiconductor layer; a current extension layer formed on the current induction layer and composed of the second conductive type of semiconductor layer; and a top mirror layer formed on the current extension layer, wherein the top mirror layer includes undoped center portion and its both end having the second conductive type of dopant diffusion region.Type: ApplicationFiled: April 25, 2001Publication date: June 20, 2002Inventors: Byueng-Su Yoo, O-Kyun Kwon, Young-Gu Ju
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Patent number: 6347165Abstract: The present invention relates to a wavelength demultiplexer. More particularly, the present invention provides the wavelength demultiplexer with straight optical waveguide that minimizes the bending loss of optical waveguide caused in the wavelength demultiplexer. A wavelength demultiplexer with straight optical waveguide in accordance with the present invention comprises an optical power distributor, a plurality of optical waveguides, and an optical power combiner. The optical power distributor evenly divides multiplexed input light by intensity. The number of optical waveguide transmits the divided multiplexed light and causes constant optical path length differences among adjacent waveguides. The optical waveguide is straight optical waveguide and includes two parts of different effective refractive indices. The optical power combiner receives output signals of the plurality of optical waveguides and separates the output signals by phase.Type: GrantFiled: October 12, 1999Date of Patent: February 12, 2002Assignee: Electronics and Telecommunications Research InstituteInventors: Kyung-Sook Hyun, Byueng-Su Yoo
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Patent number: 6343090Abstract: A single mode surface emitting laser and its manufacturing method are provided. The surface emitting laser which has a characteristic of single transverse mode radiation in the broad region using reflectivity distribution of a reflector layer with an antiguide clad is provided.Type: GrantFiled: August 28, 1998Date of Patent: January 29, 2002Assignee: Electronics and Telecommunications Research InstituteInventors: Byueng Su Yoo, Hye Yong Chu, Hyo Hoon Park, Kyung Sook Hyun, El Hang Lee
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Patent number: 5939729Abstract: The present invention relates to a semiconductor photoelectric device including a InAs layer formed to monoatomic thickness sandwiched between spacer layers adjacent to an emitter to maximize a difference in energy between two quantum states in accumulation layer of a resonant tunneling diode having a double barrier structure, resulting in separating the resonant tunneling current determined by two quantum states of the triangular well in accumulation layer of resonant tunneling diode, even when light of a low intensity is irradiated to the surface of the resonant tunneling diode. Thus, there is provided an optical controlled resonant tunneling diode, making it possible to manufacturing a switching device for controlling an electric signal using light source by adjusting, using light, the resonant tunneling determined by an excited state of the triangular well.Type: GrantFiled: November 24, 1997Date of Patent: August 17, 1999Assignee: Electronics and Telecommunications Research InstituteInventors: Hye Yong Chu, Kyu-Suk Lee, Byueng-Su Yoo, Hyo-Hoon Park