Abstract: A pellicle includes a pellicle frame, a pellicle membrane, and an attaching element, a first surface of the attaching element having exposed pores.

Abstract: A method of operating a host controlling a storage medium includes receiving initial authentication information; setting a portion of a storage space of the storage medium as a protection area; transmitting the received initial authentication information and protection area information with respect to the protection area to the storage medium; and discarding the initial authentication information in the host.

Abstract: Provided are photomasks, methods of fabricating the photomasks, and methods of fabricating a semiconductor device by using the photomasks, in which a critical dimension (CD) of a pattern of a specific region of the photomask is corrected to improve the distribution of CDs of the pattern formed on a wafer. The photomasks may include a substrate and a light-blocking pattern formed on the substrate that includes an absorber layer and an anti-reflection coating (ARC) layer. The light-blocking pattern may include at least one of a first corrected area in which a top surface of the absorber layer is exposed, and a second corrected area in which a correction layer is formed on the ARC layer.

Abstract: A method of patterning a photoresist layer includes forming a photoresist layer on a substrate, exposing the photoresist layer to light using a first light source so as to induce a chemical change in the photoresist layer, performing a post-exposure bake process on the photoresist layer, the post-exposure bake process including irradiating the photoresist layer with at least two shots of laser light from a second light source such that the photoresist layer is heated to a first temperature, and performing a developing process on the photoresist layer after the post-exposure bake process, the development process selectively removing a portion of the photoresist layer.

Abstract: Provided is a method of manufacturing a semiconductor device. The method of manufacturing a semiconductor device includes forming a target etching layer on a substrate, patterning the target etching layer to form a pattern layer including a pattern portion having a first height and a first width and a recess portion having a second width, providing a first gas and a second gas on the pattern layer, and performing a reaction process including reacting the first and second gases with a surface of the pattern portion by irradiating a laser beam on the pattern layer. The performing the reaction process includes removing a portion of sidewalls of the pattern portion so that the pattern portion has a third width that is smaller than the first width.

Abstract: A method of manufacturing a pellicle includes forming a membrane on a first surface of a substrate from a chemical reaction in which the substrate serves as a catalyst, forming a protective pattern on a second surface of the substrate, immersing the substrate in an etchant solution, such that a portion of the substrate exposed through the protective pattern is removed to form a frame, and replacing the etchant solution with a solvent.

Abstract: A semiconductor device includes a memory cell array including a first memory region and a second memory region; a plurality of register sets for storing a plurality of parameter sets; and a control logic circuit configured to, activate a first register set among the plurality of register sets in response to a selection signal, and perform an access operation on the first memory region using a parameter set stored in an activated register set from among the plurality of register sets.

Abstract: Disclosed is a method of operating a memory system which executes a plurality of commands including a write command and a trim command. The memory system includes a memory device, which includes a plurality of blocks. The method further includes performing garbage collection for generating a free block, calculating a workload level in performing the garbage collection, and changing a command schedule based on the workload level.

Abstract: Disclosed is a method. The method includes placing a photomask on a receiver of a cleaning apparatus, removing adhesive residue from the photomask by irradiating laser on the adhesive residue, attaching a pellicle to the photomask, and exposing a semiconductor substrate to a light using the photomask, wherein the irradiating laser repeatedly pauses and restarts during the removing of the adhesive residue.

Abstract: A pellicle includes a pellicle membrane, which includes a porous thin film. The porous thin film includes a plurality of nanowires, which are arranged across one another to form a net structure. A photomask assembly includes the pellicle and a photomask, wherein the pellicle is fixed to a surface of the photomask.

Abstract: A method of manufacturing a pellicle assembly, the method including attaching a carbon-containing thin film onto a transfer membrane in a wet atmosphere; attaching the carbon-containing thin film to a pellicle frame in a dry atmosphere while the carbon-containing thin film is attached onto the transfer membrane; and separating the transfer membrane from the carbon-containing thin film while the carbon-containing thin film is attached to the pellicle frame.

Abstract: A method of inspecting a surface includes loading an inspection object on a stage of a multibeam inspection device configured to generate a beam array, and scanning a plurality of inspection areas of the inspection object at a same time with the beam array, wherein one of the first inspection areas is smaller than an area formed by a quadrangle connecting respective centers of corresponding four adjacent beams of the beam array, and an adjacent area of the one first inspection area is not scanned with the beam array.

Abstract: A photomask includes a transparent substrate, a mask pattern formed on the substrate, and a protective layer pattern covering side walls of the mask pattern, wherein a top of the protective layer pattern is exposed.

Abstract: A photomask includes a transparent substrate, a mask pattern formed on the substrate, and a protective layer pattern covering side walls of the mask pattern, wherein a top of the protective layer pattern is exposed.

Abstract: A method of patterning a photoresist layer includes forming a photoresist layer on a substrate, exposing the photoresist layer to light using a first light source so as to induce a chemical change in the photoresist layer, performing a post-exposure bake process on the photoresist layer, the post-exposure bake process including irradiating the photoresist layer with at least two shots of laser light from a second light source such that the photoresist layer is heated to a first temperature, and performing a developing process on the photoresist layer after the post-exposure bake process, the development process selectively removing a portion of the photoresist layer.

Abstract: A method of manufacturing a pellicle includes forming a membrane on a first surface of a substrate from a chemical reaction in which the substrate serves as a catalyst, forming a protective pattern on a second surface of the substrate, immersing the substrate in an etchant solution, such that a portion of the substrate exposed through the protective pattern is removed to form a frame, and replacing the etchant solution with a solvent.

Abstract: A pellicle includes a pellicle frame, a pellicle membrane, and an attaching element, a first surface of the attaching element having exposed pores.

Abstract: A reticle inspection apparatus includes a reticle, an image generator to generate images of a surface of the reticle, and an image processor to compare first and second images generated by the image generator. The first image is generated when a pellicle is not on the reticle and the second image is generated when the pellicle is on the reticle.

Abstract: A method for measuring a critical dimension of a mask pattern, including generating a mask pattern using an optically proximity-corrected (OPC) mask design including at least one block; measuring a first critical dimension of a target-region of interest (target-ROI) including neighboring blocks having a same critical dimension (CD), in the mask pattern; determining a group region of interest including the target-ROI and at least one neighboring block adjacent to the target-ROI; measuring second CDs of the neighboring blocks of the group region of interest; and correcting a measuring value of the first CD using a measuring value of the second CDs.

Abstract: Provided are photomasks, methods of fabricating the photomasks, and methods of fabricating a semiconductor device by using the photomasks, in which a critical dimension (CD) of a pattern of a specific region of the photomask is corrected to improve the distribution of CDs of the pattern formed on a wafer. The photomasks may include a substrate and a light-blocking pattern formed on the substrate that includes an absorber layer and an anti-reflection coating (ARC) layer. The light-blocking pattern may include at least one of a first corrected area in which a top surface of the absorber layer is exposed, and a second corrected area in which a correction layer is formed on the ARC layer.