Abstract: A phase shifter, more particularly relates to a phase shifter for controlling phase velocity by using stubs is disclosed. The phase shifter includes a first line configured to deliver a power into corresponding radiation elements, the first line being a conductor, and a second line configured to deliver the power into corresponding radiation elements, the second line being a conductor. Here, a first phase velocity of a first signal propagated through the first line is different from a second phase velocity of a second signal propagated through the second line.

Abstract: A steam generator, used in a helical coil type steam generator for a sodium-cooled fast reactor which has heat transfer tubes of a double-wall tube structure, with high heat transfer efficiency and a heat transfer tube damage detection unit that can detect on-line in real-time whether the heat transfer tube is damaged or not. The heat transfer tube of a steam generator for a sodium-cooled fast reactor, includes an inner tube formed with a first material; an outer tube formed with a second material that is in close contact with the inner tube and which has a thermal expansion coefficient less than that of the first material; and a plurality of helium flow grooves formed between the inner tube and the outer tube along a lengthwise direction of the heat transfer tube for flowing helium gas.

Abstract: A dove tail device for adjusting tilting angle of an antenna by rotating an arm member using a motion member which moves linearly is disclosed. The dove tail device in an antenna includes a guide and a motion member configured to move on the guide. Here, the motion member is combined with a rotation arm of a phase shifter, the rotation arm rotates according as the motion member moves on the guide, and an arm member of the phase shifter rotates in response to rotation of the rotation arm.

Abstract: An antenna having a transformer exchangeable in accordance with tilting angle adjustment rate is disclosed. The antenna includes a phase shifter, a tilting adjustment apparatus and a transformer configured to move linearly in response to a force provided from the tilting adjustment apparatus, and deliver a force corresponding to the moving to the phase shifter.

Abstract: A phase shifter, more particularly relates to a phase shifter for controlling phase velocity by using stubs is disclosed. The phase shifter includes a first line configured to deliver a power into corresponding radiation elements, the first line being a conductor, and a second line configured to deliver the power into corresponding radiation elements, the second line being a conductor. Here, a first phase velocity of a first signal propagated through the first line is different from a second phase velocity of a second signal propagated through the second line.

Abstract: A common purchase system and its method having circular membership system for congratulation and condolence are provided. A plurality of member terminals requests for an application of the congratulations and condolences membership, requests an application for registration as a beneficiary and requests cooperative purchase of daily necessaries of life via a communication network. A plurality of terminals of cooperative enterprises receives product information for which cooperative purchase is requested in the plurality of member terminals, delivers a concerned product, and then provides a delivery result information about the product which is bought according to a cooperative purchase request.

Abstract: A method of forming a poly pattern for minimizing a change in a storage value in the R-string pattern of the LCD panel drive IC (LDI) that includes depositing a poly silicon layer used as a resistor in a R-string structure over a semiconductor substrate; and then forming a poly silicon layer pattern having interconnected H-shaped cross-sections; and then forming a silicide-anti blocking area (SAB) layer over the poly silicon layer pattern and then patterning the SAB layer to thereby form SAB layer patterns over portions of the poly silicon layer pattern while exposing other portions of the poly silicon layer pattern; and then forming a silicide layer over the exposed portions of the poly silicon layer pattern. Therefore, although the size of the SAB pattern is reduced due to problems caused in processing steps, the poly line that occupies most of the resistance does not change so that a change in the resistance is entirely reduced.

Abstract: A steam generator, used in a helical coil type steam generator for a sodium-cooled fast reactor which has heat transfer tubes of a double-wall tube structure, with high heat transfer efficiency and a heat transfer tube damage detection unit that can detect on-line in real-time whether the heat transfer tube is damaged or not. The heat transfer tube of a steam generator for a sodium-cooled fast reactor, includes an inner tube formed with a first material; an outer tube formed with a second material that is in close contact with the inner tube and which has a thermal expansion coefficient less than that of the first material; and a plurality of helium flow grooves formed between the inner tube and the outer tube along a lengthwise direction of the heat transfer tube for flowing helium gas.

Abstract: Embodiments relate to a method for manufacturing a semiconductor device, which may reduce damage due to stress of an STI bottom corner during an ion implantation and annealing being subsequent process of an STI in a semiconductor process are provided. According to embodiments, a method may include forming a prescribed insulating layer on a substrate, forming a photoresist pattern defining a trench region on the insulating layer, dry-etching the insulating layer and the substrate using the photoresist pattern as a mask to form a first trench region, and wet-etching the substrate on which the first trench region is formed using the photoresist pattern as a mask to form a second trench region.

Abstract: There is provided a semiconductor device in which extension units are formed in the ends of a slit that constitutes a slit pattern to relieve stress transmitted between interconnect layers. The embodiments relate to a semiconductor device which includes a first metal layer included on a semiconductor substrate, an interlayer dielectric layer having a low dielectric constant and being formed on the first metal layer, via patterns formed on the interlayer dielectric layer, a second metal layer formed on the interlayer dielectric layer having the low dielectric constant, and slit patterns formed immediately above regions of the second metal layer where the via patterns of the interlayer dielectric layer are not formed, wherein extension units are formed at an end of a slit that constitutes a slit pattern.

Abstract: A method of forming a poly pattern for minimizing a change in a storage value in the R-string pattern of the LCD panel drive IC (LDI) that includes depositing a poly silicon layer used as a resistor in a R-string structure over a semiconductor substrate; and then forming a poly silicon layer pattern having interconnected H-shaped cross-sections; and then forming a silicide-anti blocking area (SAB) layer over the poly silicon layer pattern and then patterning the SAB layer to thereby form SAB layer patterns over portions of the poly silicon layer pattern while exposing other portions of the poly silicon layer pattern; and then forming a silicide layer over the exposed portions of the poly silicon layer pattern. Therefore, although the size of the SAB pattern is reduced due to problems caused in processing steps, the poly line that occupies most of the resistance does not change so that a change in the resistance is entirely reduced.

Abstract: An LCD driver IC and a method for manufacturing the same. In one example embodiment, an LCD driver IC includes first and second main poly patterns formed separately from each other, a connection poly pattern connecting the main poly patterns, and a salicide blocking (SAB) pattern formed on the main poly patterns to block the main poly patterns.

Abstract: Embodiments relate to a semiconductor device and a method for manufacturing a semiconductor device, which may reduce damage due to stress of an STI bottom corner during an ion implantation and annealing being subsequent process of an STI in a semiconductor process are provided. According to embodiments, a method may include forming a prescribed insulating layer on a substrate, forming a photoresist pattern defining a trench region on the insulating layer, dry-etching the insulating layer and the substrate using the photoresist pattern as a mask to form a first trench region, and wet-etching the substrate on which the first trench region is formed using the photoresist pattern as a mask to form a second trench region.

Abstract: There is provided a semiconductor device in which extension units are formed in the ends of a slit that constitutes a slit pattern to relieve stress transmitted between interconnect layers. The embodiments relate to a semiconductor device which includes a first metal layer included on a semiconductor substrate, an interlayer dielectric layer having a low dielectric constant and being formed on the first metal layer, via patterns formed on the interlayer dielectric layer, a second metal layer formed on the interlayer dielectric layer having the low dielectric constant, and slit patterns formed immediately above regions of the second metal layer where the via patterns of the interlayer dielectric layer are not formed, wherein extension units are formed at an end of a slit that constitutes a slit pattern.