Patents by Inventor Byung-Keun Hwang

Byung-Keun Hwang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10049882
    Abstract: A method for fabricating a semiconductor device includes forming a structure with a height difference on a substrate and forming a dielectric layer structure on the structure using an atomic layer deposition (ALD) method. Forming the dielectric layer structure includes forming a first dielectric layer including silicon nitride on the structure with the height difference. Forming the first dielectric layer includes feeding a first gas including pentachlorodisilane (PCDS) or diisopropylamine pentachlorodisilane (DPDC) as a silicon precursor, and a second gas including nitrogen components into a chamber including the substrate such that the first dielectric layer is formed in situ on the structure having the height difference.
    Type: Grant
    Filed: January 25, 2017
    Date of Patent: August 14, 2018
    Assignees: SAMSUNG ELECTRONICS CO., LTD., DOW SILICONES CORPORATION
    Inventors: Won Woong Chung, Sun hye Hwang, Youn Joung Cho, Jung Sik Choi, Xiaobing Zhou, Brian David Rekken, Byung Keun Hwang, Michael David Telgenhoff
  • Publication number: 20180211842
    Abstract: A method for fabricating a semiconductor device includes forming a structure with a height difference on a substrate and forming a dielectric layer structure on the structure using an atomic layer deposition (ALD) method. Forming the dielectric layer structure includes forming a first dielectric layer including silicon nitride on the structure with the height difference. Forming the first dielectric layer includes feeding a first gas including pentachlorodisilane (PCDS) or diisopropylamine pentachlorodisilane (DPDC) as a silicon precursor, and a second gas including nitrogen components into a chamber including the substrate such that the first dielectric layer is formed in situ on the structure having the height difference.
    Type: Application
    Filed: January 25, 2017
    Publication date: July 26, 2018
    Applicant: DOW CORNING CORPORATION
    Inventors: Won Woong CHUNG, Sun hye HWANG, Youn Joung CHO, Jung Sik CHOI, Xiaobing ZHOU, Brian David REKKEN, Byung Keun HWANG, Michael David TELGENHOFF
  • Publication number: 20110155956
    Abstract: A method produces nanoparticles by electrospinning a silicon composition having at least one silicon atom. The electrospinning of the silicon composition forms fibers. The fibers are pyrolyzed to produce the nanoparticles. The nanoparticles have excellent photo-luminescent properties and are suitable for use in many different applications.
    Type: Application
    Filed: August 19, 2009
    Publication date: June 30, 2011
    Inventors: Muhammad Ather Ashraf, Byung Keun Hwang, Bonnie J. Ludwig
  • Publication number: 20090032901
    Abstract: Trenches in a semiconductor substrate are filled by (i) dispensing a film forming material on the semiconductor substrate and into the trenches; (ii) curing the dispensed film forming material in the presence of an oxidant at a first low temperature for a first predetermined period of time; (iii) curing the dispensed film forming material in the presence of an oxidant at a second low temperature for a second predetermined period of time; (iv) curing the dispensed film forming material in the presence of an oxidant at a third high temperature for a third predetermined period of time; and (v) forming filled oxide trenches in the semiconductor substrate. The film forming material is hydrogen silsesquioxane.
    Type: Application
    Filed: June 12, 2006
    Publication date: February 5, 2009
    Inventors: Wei Chen, Byung Keun Hwang, Jae-Kyun Lee, Eric Scott Moyer, Michael John Spaulding, Sheng Wang
  • Patent number: 7189664
    Abstract: A method for producing hydrogenated silicon oxycarbide (H:SiOC) films having low dielectric constant. The method comprises using plasma-assisted polymerization to react a cyclic silane compound containing at least one strained silicon bond to produce the films. The resulting films are useful in the formation of semiconductor devices.
    Type: Grant
    Filed: January 26, 2004
    Date of Patent: March 13, 2007
    Assignee: Dow Corning Corporation
    Inventors: Mark Jon Loboda, Byung Keun Hwang
  • Patent number: 6984594
    Abstract: The present invention relates to a process for vapor depositing alow dielectric insulating film, and more particularly to a process for vapor deposition of low dielectric insulating film that can significantly improve a vapor deposition speed while maintaining properties of the low dielectric insulating film, thereby solving parasitic capacitance problems to realize a high aperture ratio structure, and can reduce a process time by using silane gas when vapor depositing an insulating film by a CVD or PECVD method to form a protection film for a semiconductor device.
    Type: Grant
    Filed: May 17, 2002
    Date of Patent: January 10, 2006
    Assignee: Samsung Electronics, Co., Ltd.
    Inventors: Sung-Hoon Yang, Glenn A. Cerny, Kyuha Chung, Byung-Keun Hwang, Wan-Shick Hong
  • Publication number: 20040166692
    Abstract: A method for producing hydrogenated silicon oxycarbide (H:SiOC) films having low dielectric constant. The method comprises using plasma-assisted polymerization to react a cyclic silane compound containing at least one strained silicon bond to produce the films. The resulting films are useful in the formation of semiconductor devices.
    Type: Application
    Filed: February 26, 2003
    Publication date: August 26, 2004
    Inventors: Mark Jon Loboda, Byung Keun Hwang
  • Patent number: 6667553
    Abstract: This invention pertains to a method for producing hydrogenated silicon oxycarbide (H:SiOC) films having low dielectric constant and a light transmittance of 95% or more for light with a wavelength in the range of 400 nm to 800 nm. The method comprises reacting a methyl-containing silane in a controlled oxygen environment using plasma enhanced or ozone assisted chemical vapor deposition to produce the films. Because of the transmittance the resulting films are useful in the formation of display devices.
    Type: Grant
    Filed: November 21, 2001
    Date of Patent: December 23, 2003
    Assignee: Dow Corning Corporation
    Inventors: Glenn Allen Cerny, Byung Keun Hwang, Mark Jon Loboda
  • Publication number: 20030215970
    Abstract: The present invention relates to a process for vapor depositing a low dielectric insulating film, and more particularly to a process for vapor deposition of low dielectric insulating film that can significantly improve a vapor deposition speed while maintaining properties of the low dielectric insulating film, thereby solving parasitic capacitance problems to realize a high aperture ratio structure, and can reduce a process time by using silane gas when vapor depositing an insulating film by a CVD or PECVD method to form a protection film for a semiconductor device.
    Type: Application
    Filed: May 17, 2002
    Publication date: November 20, 2003
    Inventors: Sung-Hoon Yang, Glenn A. Cerny, Kyuha Chung, Byung-Keun Hwang, Wan-Shick Hong
  • Publication number: 20030148019
    Abstract: A colloid composition can be used to form a thin film on a substrate. The colloid can be colloidal silica. The thin film can be a dielectric layer. The substrate can be a semiconductor substrate having gaps thereon.
    Type: Application
    Filed: November 19, 2001
    Publication date: August 7, 2003
    Inventors: Byung Keun Hwang, Kermit Shannon Kwan, Zhongtao Li, Eric Scott Moyer, Sheng Wang, David Lee Wyman, Xiaobing Zhou
  • Patent number: 6593248
    Abstract: A method for producing fluorinated hydrogenated silicon oxycarbide (H:F:SiOC) and amorphous fluorinated hydrogenated silicon carbide (H:F:SiC) films having low dielectric permittivity. The method comprises reacting a silicon containing compound with a fluorocarbon or fluorohydrocarbon compound having an unsaturated carbon bonded to F or H. The resulting films are useful in the formation of semiconductor devices.
    Type: Grant
    Filed: March 20, 2002
    Date of Patent: July 15, 2003
    Assignee: Dow Corning Corporation
    Inventors: Mark Jon Loboda, Byung Keun Hwang
  • Publication number: 20030111662
    Abstract: This invention pertains to a method for producing hydrogenated silicon oxycarbide (H:SiOC) films having low dielectric constant and a light transmittance of 95% or more for light with a wavelength in the range of 400 nm to 800 nm. The method comprises reacting a methyl-containing silane in a controlled oxygen environment using plasma enhanced or ozone assisted chemical vapor deposition to produce the films. Because of the transmittance the resulting films are useful in the formation of display devices.
    Type: Application
    Filed: November 21, 2001
    Publication date: June 19, 2003
    Inventors: Glenn Allen Cerny, Byung Keun Hwang, Mark Jon Loboda
  • Publication number: 20020173172
    Abstract: A method for producing fluorinated hydrogenated silicon oxycarbide (H:F:SiOC) and amorphous fluorinated hydrogenated silicon carbide (H:F:SiC) films having low dielectric permittivity. The method comprises reacting a silicon containing compound with a fluorocarbon or fluorohydrocarbon compound having an unsaturated carbon bonded to F or H. The resulting films are useful in the formation of semiconductor devices.
    Type: Application
    Filed: March 20, 2002
    Publication date: November 21, 2002
    Inventors: Mark Jon Loboda, Byung Keun Hwang
  • Patent number: 6372672
    Abstract: A method of forming a silicon nitride layer in a semiconductor device manufacturing process. The silicon nitride layer (SixNyHz) is formed by PE-CVD technique at low temperature to have at most 0.35 hydrogen composition. The resulting silicon nitride layer has substantially no Si—H bonding as compared with a silicon nitride layer formed at high temperature, thereby reducing thermal stress variation during annealing. The resulting silicon nitride layer exhibits reduced thermal stress variation before and after deposition, preventing a popping phenomenon and reducing the stress applied to the underlying layer.
    Type: Grant
    Filed: January 5, 2000
    Date of Patent: April 16, 2002
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Do-Hyung Kim, Ju-Bum Lee, Byung-Keun Hwang
  • Patent number: 6337282
    Abstract: A dielectric layer is formed by depositing a first dielectric layer above a semiconductor substrate including recessed regions, etching the first dielectric layer to remove any voids and to lower the aspect ratio of the recessed regions, and depositing a second dielectric layer on the first dielectric layer in the recessed regions. The method is particularly useful when the aspect ratios are high for recessed regions formed between patterns.
    Type: Grant
    Filed: July 30, 1999
    Date of Patent: January 8, 2002
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Ju-Wan Kim, Byung-Keun Hwang, Sung-Jin Kim, Jue-Goo Lee, Chang-Hyun Cho, Gwan-Hyeob Koh
  • Publication number: 20010046777
    Abstract: A dielectric layer is formed by depositing a first dielectric layer above a semiconductor substrate including recessed regions, etching the first dielectric layer to remove any voids and to lower the aspect ratio of the recessed regions, and depositing a second dielectric layer on the first dielectric layer in the recessed regions. The method is particularly useful when the aspect ratios are high for recessed regions formed between patterns.
    Type: Application
    Filed: July 30, 1999
    Publication date: November 29, 2001
    Inventors: JU-WAN KIM, BYUNG-KEUN HWANG, SUNG-JIN KIM, JUE-GOO LEE, CHANG-HYUN CHO, GWAN-HYEOB KOH
  • Patent number: 6117785
    Abstract: A method for forming a microelectronic device includes the steps of forming a spin-on-glass layer on a microelectronic substrate, and forming a capping layer on the spin-on-glass layer opposite the substrate. A masking layer is formed on the capping layer opposite the substrate wherein the masking layer exposes portions of the capping layer and the spin-on-glass layer. The exposed portions of said capping layer and the spin-on-glass layer are etched using the masking layer as an etch mask to thereby form a contact hole through the capping layer and the spin-on-glass layer wherein protruding edge portions of the capping layer extend beyond the spin-on-glass layer adjacent the contact hole. The mask layer is removed, and the protruding edge portions of the capping layer are removed from adjacent the contact hole.
    Type: Grant
    Filed: July 10, 1997
    Date of Patent: September 12, 2000
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hae-jeong Lee, Ji-hyun Choi, Byung-keun Hwang, Ju-seon Goo
  • Patent number: 6057251
    Abstract: A method for stabilizing an interlevel dielectric layer formed by a chemical vapor deposition (CVD) process, using electron beams. A CVD oxide layer is formed on a semiconductor substrate. The CVD oxide layer is radiated with electron beams at a temperature of between approximately room temperature and approximately 500.degree. C. for a predetermined time, using an electron beam radiator, to densify the layer.
    Type: Grant
    Filed: October 1, 1998
    Date of Patent: May 2, 2000
    Assignee: Samsung Electronics, Co., Ltd.
    Inventors: Ju-seon Goo, Seong-ho Kim, Hae-jeong Lee, Byung-keun Hwang
  • Patent number: 5989983
    Abstract: An insulating layer may be fabricated on a microelectronic substrate by spinning a layer of spin-on-glass (SOG) on a microelectronic substrate and curing the SOG layer by irradiating the SOG layer with an electronic beam. Irradiating may take place simultaneously with heating the substrate to a temperature below about 500.degree. C. An underlying and/or overlying capping layer may also be provided. Alternatively, rather than irradiating the SOG layer, an overlying capping layer may be irradiated.
    Type: Grant
    Filed: August 27, 1997
    Date of Patent: November 23, 1999
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Ju-seon Goo, Ji-hyun Choi, Byung-keun Hwang, Hae-jeong Lee
  • Patent number: 5866476
    Abstract: A method for forming an insulating layer for a microelectronic device includes the steps of forming a conductive pattern on a surface of a microelectronic substrate, and forming a spin-on-glass layer on the surface of the microelectronic substrate covering the conductive pattern. The spin-on-glass layer is baked at a temperature in the range of 400.degree. C. to 750.degree. C., and a moisture blocking layer is formed on the baked spin-on-glass layer. By reducing moisture absorbed from the air into the spin-on-glass layer, a relatively low etch rate and a relatively low dielectric constant can be maintained for the spin-on-glass layer. Related structures are also discussed.
    Type: Grant
    Filed: March 27, 1997
    Date of Patent: February 2, 1999
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Ji-hyun Choi, Hae-Jeong Lee, Byung-Keun Hwang, Ju-Son Gou