Abstract: A composition, and method for using the composition, in the fabrication of an electronic device, and particularly for depositing a film comprising silicon and boron having low dielectric constant (<6.0) and high oxygen ash resistance. The film includes silicon and boron and may be, without limitation, a silicon borocarboxide, a silicon borocarbonitride, a silicon boroxide, or a silicon borocarboxynitride.

Abstract: Provided is a method of fabricating a semiconductor device. The method of fabricating a semiconductor device comprises forming a first layer which has a first surface, does not comprise an acid, and comprises a metal material; forming, on the first layer, a second layer which comprises a trench exposing the first surface, has a second surface intersecting the first surface within the trench, and comprises an acid and an organic material; providing a first precursor comprising an alkoxy group and silicon; and forming a third layer comprising silicon oxide on the second surface within the trench. The third layer is in contact with a portion of the first surface within the trench.

Abstract: A semiconductor device manufacturing method includes providing a first layer having a first surface, providing a second layer including a trench that exposes the first surface, onto the first layer, forming a first polymer layer that fills the trench, and performing a heat treatment process on the first polymer layer to form a second polymer layer. A second surface of the second layer is exposed by the trench, the first polymer layer includes a first portion being in contact with the first surface, and a second portion being in contact with the second surface, when the heat treatment process is performed, the first portion of the first polymer layer is decomposed, when the heat treatment process is performed, the second portion of the first polymer layer is cross-linked to form the second polymer layer, and physical properties of the first layer are different from physical properties of the second layer.

Abstract: A method for fabricating trihalodisilane, the method includes providing a halodisilane including at least four halogen atoms; reducing the halodisilane, using a mixed reducing agent including a first reducing agent represented by following Chemical Formula 1-1, in which RA is an alkyl group, and m and n are each independently 1 or 2, and m+n=3, and a second reducing agent represented by following Chemical Formula 2-1, in which RS is an alkyl group or an aryl group, p and q are each independently 1, 2, or 3, and p+q=4; and obtaining a product including a 1,1,1-trihalodisilane, (RA)m—Al—Hn??[Chemical Formula 1-1] (RS)p—Sn—Hq.

Abstract: A polishing pad for chemical mechanical polishing includes a polymer matrix and a temperature sensitive agent dispersed in the polymer matrix and constituting 1 to 40% by volume of the polishing pad, wherein the temperature sensitive agent includes a two-dimensional (2D) sheet material having a thermal conductivity of 1 W/(m·K) or more.

Abstract: Slurry compositions for chemical mechanical polishing, chemical mechanical polishing apparatuses using the same, and methods for fabricating a semiconductor device using the same are provided. The slurry composition for chemical mechanical polishing may include polishing particles in an amount of 0.1% to 10% by weight of the slurry composition, an oxidant in an amount of 0.1% to 5% by weight of the slurry composition, a thermo-sensitive agent in an amount of 0.01% to 30% by weight of the slurry composition. The thermo-sensitive agent may include metal nanoparticles or metal oxide nanoparticles, and water, wherein the slurry composition has a pH of 1 to 8.

Abstract: The present disclosure provides a method for manufacturing a semiconductor device using selective vapor deposition and selective desorption. The method for manufacturing a semiconductor device includes providing a first layer having a first surface, and forming a second layer on the first layer such that a portion of the first surface is not covered by the second layer. The second layer has a second surface that meets the first surface. An inhibitor layer is formed on the first surface and the second surface, and the inhibitor layer on the second surface is selectively removed to expose the second surface. An interest layer is formed on the second surface. Physical properties of the first layer are different from physical properties of the second layer.

Abstract: A method for fabricating a semiconductor device includes forming a structure with a height difference on a substrate and forming a dielectric layer structure on the structure using an atomic layer deposition (ALD) method. Forming the dielectric layer structure includes forming a first dielectric layer including silicon nitride on the structure with the height difference. Forming the first dielectric layer includes feeding a first gas including pentachlorodisilane (PCDS) or diisopropylamine pentachlorodisilane (DPDC) as a silicon precursor, and a second gas including nitrogen components into a chamber including the substrate such that the first dielectric layer is formed in situ on the structure having the height difference.

Abstract: A method for fabricating a semiconductor device includes forming a structure with a height difference on a substrate and forming a dielectric layer structure on the structure using an atomic layer deposition (ALD) method. Forming the dielectric layer structure includes forming a first dielectric layer including silicon nitride on the structure with the height difference. Forming the first dielectric layer includes feeding a first gas including pentachlorodisilane (PCDS) or diisopropylamine pentachlorodisilane (DPDC) as a silicon precursor, and a second gas including nitrogen components into a chamber including the substrate such that the first dielectric layer is formed in situ on the structure having the height difference.

Abstract: A method produces nanoparticles by electrospinning a silicon composition having at least one silicon atom. The electrospinning of the silicon composition forms fibers. The fibers are pyrolyzed to produce the nanoparticles. The nanoparticles have excellent photo-luminescent properties and are suitable for use in many different applications.

Abstract: Trenches in a semiconductor substrate are filled by (i) dispensing a film forming material on the semiconductor substrate and into the trenches; (ii) curing the dispensed film forming material in the presence of an oxidant at a first low temperature for a first predetermined period of time; (iii) curing the dispensed film forming material in the presence of an oxidant at a second low temperature for a second predetermined period of time; (iv) curing the dispensed film forming material in the presence of an oxidant at a third high temperature for a third predetermined period of time; and (v) forming filled oxide trenches in the semiconductor substrate. The film forming material is hydrogen silsesquioxane.

Abstract: A method for producing hydrogenated silicon oxycarbide (H:SiOC) films having low dielectric constant. The method comprises using plasma-assisted polymerization to react a cyclic silane compound containing at least one strained silicon bond to produce the films. The resulting films are useful in the formation of semiconductor devices.

Abstract: The present invention relates to a process for vapor depositing alow dielectric insulating film, and more particularly to a process for vapor deposition of low dielectric insulating film that can significantly improve a vapor deposition speed while maintaining properties of the low dielectric insulating film, thereby solving parasitic capacitance problems to realize a high aperture ratio structure, and can reduce a process time by using silane gas when vapor depositing an insulating film by a CVD or PECVD method to form a protection film for a semiconductor device.

Abstract: A method for producing hydrogenated silicon oxycarbide (H:SiOC) films having low dielectric constant. The method comprises using plasma-assisted polymerization to react a cyclic silane compound containing at least one strained silicon bond to produce the films. The resulting films are useful in the formation of semiconductor devices.

Abstract: This invention pertains to a method for producing hydrogenated silicon oxycarbide (H:SiOC) films having low dielectric constant and a light transmittance of 95% or more for light with a wavelength in the range of 400 nm to 800 nm. The method comprises reacting a methyl-containing silane in a controlled oxygen environment using plasma enhanced or ozone assisted chemical vapor deposition to produce the films. Because of the transmittance the resulting films are useful in the formation of display devices.

Abstract: The present invention relates to a process for vapor depositing a low dielectric insulating film, and more particularly to a process for vapor deposition of low dielectric insulating film that can significantly improve a vapor deposition speed while maintaining properties of the low dielectric insulating film, thereby solving parasitic capacitance problems to realize a high aperture ratio structure, and can reduce a process time by using silane gas when vapor depositing an insulating film by a CVD or PECVD method to form a protection film for a semiconductor device.

Abstract: A colloid composition can be used to form a thin film on a substrate. The colloid can be colloidal silica. The thin film can be a dielectric layer. The substrate can be a semiconductor substrate having gaps thereon.

Abstract: A method for producing fluorinated hydrogenated silicon oxycarbide (H:F:SiOC) and amorphous fluorinated hydrogenated silicon carbide (H:F:SiC) films having low dielectric permittivity. The method comprises reacting a silicon containing compound with a fluorocarbon or fluorohydrocarbon compound having an unsaturated carbon bonded to F or H. The resulting films are useful in the formation of semiconductor devices.

Abstract: This invention pertains to a method for producing hydrogenated silicon oxycarbide (H:SiOC) films having low dielectric constant and a light transmittance of 95% or more for light with a wavelength in the range of 400 nm to 800 nm. The method comprises reacting a methyl-containing silane in a controlled oxygen environment using plasma enhanced or ozone assisted chemical vapor deposition to produce the films. Because of the transmittance the resulting films are useful in the formation of display devices.

Abstract: A method for producing fluorinated hydrogenated silicon oxycarbide (H:F:SiOC) and amorphous fluorinated hydrogenated silicon carbide (H:F:SiC) films having low dielectric permittivity. The method comprises reacting a silicon containing compound with a fluorocarbon or fluorohydrocarbon compound having an unsaturated carbon bonded to F or H. The resulting films are useful in the formation of semiconductor devices.