Abstract: An optical path control member according to an embodiment includes: a first substrate on which a first direction and a second direction are defined; a first electrode disposed on the first substrate; a second substrate disposed on the first substrate and defining the first direction and the second direction; a second electrode disposed under the second substrate; a light conversion part disposed between the first electrode and the second electrode; an adhesive layer disposed between the first electrode and the light conversion part, and a cutting region formed by removing the second substrate, the second electrode, and the light conversion part, wherein the cutting region includes a first cutting region and a second cutting region that extend in a length direction of the first direction and are disposed to face each other in the second direction, the first cutting region and the second cutting region include a first region in which the adhesive layer is formed and a second region formed by partially or entire

Abstract: An optical path control member according to an embodiment comprises: a first substrate; a first electrode disposed on the upper part of the first substrate; a second substrate disposed on the first substrate; a second electrode disposed on the lower part of the second substrate; and an optical conversion unit disposed between the first electrode and the second electrode. The optical conversion unit includes partition wall portions and receiving portions that are alternately disposed. The receiving portions change optical transmittance in response to the application of voltage, and include a dispersion and optical conversion particles dispersed in the dispersion. The refractive index ratio of the partition wall portions and the receiving portions is 1:0.95 to 1:1.05.

Abstract: A light path control member according to an embodiment comprises: a first substrate; a first electrode disposed on the first substrate; a second substrate disposed on the first substrate; a second electrode disposed below the second substrate; and a light conversion unit disposed between the first electrode and the second electrode, wherein the light conversion unit includes a partition wall and an accommodation part that are arranged alternately, the accommodation part changes in light transmittance according to the application of voltage, the accommodation part includes a dispersion liquid and light conversion particles dispersed in the dispersion liquid, the contact surface between the partition wall and the accommodation part is inclined at an inclination angle with respect to a reference axis perpendicular to the upper surface of the first substrate, and the inclination angle is 1° to 10°.

Abstract: A light path control member according to an embodiment comprises: a first substrate; a first electrode disposed on the first substrate; a second substrate disposed on the first substrate; a second electrode disposed under the second substrate; a light conversion part disposed between the first electrode and the second electrode; and an adhesive layer disposed between the second electrode and the light conversion part, wherein the light conversion part comprises alternately disposed partition wall portions and accommodating portions, the accommodating portions comprise a dispersion and a plurality of light absorbing particles disposed in the dispersion, and the log volume resistivity of the adhesive layer is 9 ?·cm to 15 ?·cm.

Abstract: An optical path control member according to an embodiment comprises: a first substrate; a first electrode disposed on the upper part of the first substrate; a second substrate disposed on the first substrate; a second electrode disposed on the lower part of the second substrate; and a light conversion unit disposed between the first electrode and the second electrode. The light conversion unit includes a partition wall portion and a receiving portion that are alternately disposed. The receiving portion changes light transmittance according to the application of voltage. The partition wall portion includes a base partition wall portion and a separating partition wall portion. A plurality of pores are disposed in at least one of the base partition wall portion or the separating partition wall portion. The density per unit area of partition material in the separating partition wall portion is less than the density per unit area of partition material in the base partition wall portion.

Abstract: An optical path control member, according to one embodiment, comprises: a first substrate; a first electrode disposed on the upper surface of the first substrate; a second substrate disposed above the first substrate; a second electrode disposed on the lower surface of the second substrate; and a light conversion unit disposed between the first electrode and the second electrode, wherein the light conversion unit comprises a partition wall part and an accommodation part which are alternately arranged. The accommodation part: has a light transmittance that varies according to the application of a voltage; comprises a dispersion liquid and a plurality of light-absorbing particles dispersed in the dispersion liquid; and has at least one protrusion part arranged therein. The protrusion part: makes contact with the partition wall part; and is extendedly arranged in a direction different from the extending direction of the partition wall part.

Abstract: An electrophoretic particle according to an embodiment contains carbon black, and the electrophoretic particle comprises: a core portion; and a shell portion disposed to surround the outer surface of the core portion, wherein a protrusion portion is formed on the surface of the core portion, the core portion has a chromaticity index of 2 or less, the core portion has a light absorption rate of 90% to 99%, and the particle diameter of the electrophoretic particles is 50 nm to 800 nm.

Abstract: An optical path control member, according to an embodiment, comprises: a first substrate; a first electrode disposed on an upper surface of the first substrate; a second substrate disposed on the first substrate; a second electrode disposed on a lower surface of the second substrate; and an optical conversion unit disposed between the first electrode and the second electrode, wherein the optical conversion unit includes partition wall parts and accommodation parts which are alternately disposed, the accommodation parts have a light transmission rate that varies according to the application of voltage, and comprise dispersion liquids and optical conversion particles dispersed in the dispersion liquids, the optical conversion particles include first particles and second particles, each of the second particles has a hollow formed therein, and each surface of the first particles and each surface of the second particles are charged with the same polarity.

Abstract: A light path control member according to an embodiment comprises: a first substrate; a first electrode disposed on the first substrate; a second substrate disposed on the first substrate; a second electrode disposed below the second substrate; a light conversion unit disposed between the first electrode and the second electrode; and a power supply unit connected to the first electrode and the second electrode, wherein the light conversion unit includes a partition wall part and a receiving part that are alternately arranged, the receiving part has a light transmittance that changes in response to the application of a voltage, the receiving part includes a dispersion liquid and a plurality of light absorbing particles dispersed in the dispersion liquid, the height of the receiving part is 15 ?m to 25 ?m, the width of the receiving part is 1.5 ?m to 2.

Abstract: A heat treatment container for a vacuum heat treatment apparatus according to an exemplary embodiment includes a bottom portion and a sidewall, and a support protruding inward.

Abstract: A silicon carbide powder according to the embodiment includes nitrogen having a concentration in a range of about 100 ppm to about 5000 ppm. A method for manufacturing silicon carbide powder according to the embodiment includes preparing a mixture by mixing a silicon source including silicon with a solid carbon source or a carbon source including an organic carbon compound; heating the mixture; cooling the mixture; and supplying a nitrogen-based gas into the mixture.

Abstract: A vacuum heat treatment apparatus according to the embodiment comprises a chamber; a thermal insulator in the chamber; a reaction container in the thermal insulator; a heating member between the reaction container and the the thermal insulator for heating the reaction container; and a temperature measuring member in or on a surface of the reaction container, wherein the temperature measuring member comprises a thermocouple and a protective tube surrounding the thermocouple, and the protective tube comprises tungsten (W), tantalum (Ta), or silicon carbide (SiC).

Abstract: A method for manufacturing a silicon carbide powder according to the embodiment includes forming a mixture by mixing a silicon (Si) source containing silicon with a solid carbon (C) source or a C source containing an organic carbon compound; heating the mixture; cooling the mixture; and supplying hydrogen gas into the mixture.

Abstract: Provided is a heat treatment container for a vacuum heat treatment apparatus. The heat treatment container includes a bottom and a sidewall. An exhaust passage is defined in an upper portion of the sidewall.

Abstract: Disclosed are silicon carbide powders and a method of preparing the same. The method includes forming a mixture by mixing a silicon (Si) source, a carbon (C) source, and a silicon carbide (SiC) seed, and reacting the mixture. The silicon carbide (SiC) powders include silicon carbide (SiC) grains having a ?-type crystal phase and a grain size in a range of about 5 ?m to about 100 ?m.

Abstract: A silicon carbide powder includes at least one group selected from a first group comprising an alpha phase silicon carbide pulverulent body of which a granule size (D50) is greater than 0 ?m and less than 45 ?m with impurities less than 10 ppm, a second group comprising an alpha phase silicon carbide pulverulent body of which a granule size is greater than 45 ?m and less than 75 ?m with impurities less than 10 ppm, and a third group comprising an alpha phase silicon carbide pulverulent body of which a granule size is greater than 75 ?m and less than 110 ?m with impurities less than 10 ppm. In addition, a method for preparing a silicon carbide powder includes adding seeds to a beta silicon carbide powder, and forming an alpha silicon carbide powder by heat treating the beta silicon carbide powder.

Abstract: A method of fabricating silicon carbide powder according to the embodiment comprises the steps of preparing a mixture by mixing a silicon source comprising silicon, a silicon carbide source and a carbone source comprising at least one of a solid carbon and a organic compound; and reacting the mixture.

Abstract: A method of fabricating silicon carbide powder according to the embodiment comprises the steps of preparing a mixture by mixing a silicon source comprising silicon with a carbon source comprising a solid carbon source or an organic carbon compound; reacting the mixture; and controlling the reacting of the mixture, wherein the step of controlling the reacting comprises a step of supplying process gas or reaction product gas.

Abstract: A method for preparing silicon carbide powder according to an embodiment of the present disclosure includes the steps of: mixing a silicon (Si) source with a carbon (C) source including a solid carbon source or an organic carbon compound, and a silicon dioxide (SiO2) source, to form a mixture; and allowing the mixture to react, wherein the molar ratio of silicon dioxide in the silicon dioxide source to the sum of silicon in the silicon source and carbon in the carbon source is 0.01:1 to 0.3:1.

Abstract: Disclose are a reaction container and a vacuum heat treatment apparatus. A method of preparing a reaction container comprises preparing a graphite mixture by mixing first and second graphite powders having particle sizes different from each other, preparing a graphite molded body by pressing the graphite mixture, and processing the graphite molded body. The density of the graphite molded body is in a range of 1.8 g/cm3 to 2.1 g/cm3. A method of preparing a reaction container comprises preparing a graphite molded body by pressing graphite powders, and processing the graphite molded body to prepare the reaction container. A carbon source is impregnated into the graphite molded body or the reaction container, and density of the reaction container is in a range of 1.8 g/cm3 to 2.1 g/cm3.