Abstract: A method of fabricating silicon carbide according to the embodiment comprises the steps of preparing a mixture by mixing a dry silicon source with a carbon source comprising an organic carbon compound; and reacting the mixture, wherein a viscosity of the carbon source is in a range of 20 cps to 1000 cps.

Abstract: A method for preparing a silicon carbide power includes collecting a mixture powder by mixing a carbon source and a silicon source, synthesizing a first silicon carbide powder by heating the mixture powder, forming an agglomerated powder by agglomerating the first silicon carbide powder, and forming a second silicon carbide powder, which has larger particles than the first silicon carbide powder, by heating the agglomerated powder.

Abstract: A method for preparing a silicon carbide powder includes adding seeds to a beta silicon carbide powder, and forming an alpha silicon carbide powder by heat treating the beta silicon carbide powder.

Abstract: Disclosed are silicon carbide powders and a method of preparing the same. The method includes forming a mixture by mixing a silicon (Si) source, a carbon (C) source, and a silicon carbide (SiC) seed, and reacting the mixture. The silicon carbide (SiC) powders include silicon carbide (SiC) grains having a ?-type crystal phase and a grain size in a range of about 5 ?m to about 100 ?m.

Abstract: A method for manufacturing a silicon carbide powder according to the embodiment includes forming a mixture by mixing a silicon (Si) source containing silicon with a solid carbon (C) source or a C source containing an organic carbon compound; heating the mixture; cooling the mixture; and supplying hydrogen gas into the mixture.

Abstract: A method for preparing silicon carbide powder according to an embodiment of the present disclosure includes the steps of: mixing a silicon (Si) source with a carbon (C) source including a solid carbon source or an organic carbon compound, and a silicon dioxide (SiO2) source, to form a mixture; and allowing the mixture to react, wherein the molar ratio of silicon dioxide in the silicon dioxide source to the sum of silicon in the silicon source and carbon in the carbon source is 0.01:1 to 0.3:1.

Abstract: A silicon carbide powder according to the embodiment includes nitrogen having a concentration in a range of about 100 ppm to about 5000 ppm. A method for manufacturing silicon carbide powder according to the embodiment includes preparing a mixture by mixing a silicon source including silicon with a solid carbon source or a carbon source including an organic carbon compound; heating the mixture; cooling the mixture; and supplying a nitrogen-based gas into the mixture.

Abstract: A method of fabricating a reaction container according to the disclosure comprises putting graphite power in a molded member; and pressing the molded member, wherein the graphite powder comprises first graphite powder and second graphite powder having different particle sizes. A vacuum heat treatment apparatus comprises a chamber, a reaction container in the chamber, and a heat member heating the reaction container in the chamber, in which the reaction container comprises graphite, and the reaction container has a concentration in the range of 1.8 to 2.0.

Abstract: A method of fabricating silicon carbide according to the embodiment comprises the steps of preparing a mixture by mixing a silicon source comprising silicon with a solid carbon source or a carbon source comprising an organic carbon compound; supplying binder into the mixture to granulate the mixture; and reacting the granulated mixture.

Abstract: Disclose are a reaction container and a vacuum heat treatment apparatus. A method of preparing a reaction container comprises preparing a graphite mixture by mixing first and second graphite powders having particle sizes different from each other, preparing a graphite molded body by pressing the graphite mixture, and processing the graphite molded body. The density of the graphite molded body is in a range of 1.8 g/cm3 to 2.1 g/cm3. A method of preparing a reaction container comprises preparing a graphite molded body by pressing graphite powders, and processing the graphite molded body to prepare the reaction container. A carbon source is impregnated into the graphite molded body or the reaction container, and density of the reaction container is in a range of 1.8 g/cm3 to 2.1 g/cm3.

Abstract: A method of fabricating silicon carbide according to the embodiment comprises the steps of preparing a mixture by mixing a dry silicon source with a carbon source comprising an organic carbon compound; and reacting the mixture, wherein a viscosity of the carbon source is in a range of 20 cps to 1000 cps.

Abstract: A method of fabricating silicon carbide powder according to the embodiment comprises the steps of preparing a mixture by mixing a silicon source comprising silicon with a carbon source comprising a solid carbon source or an organic carbon compound; reacting the mixture; and controlling the reacting of the mixture, wherein the step of controlling the reacting comprises a step of supplying process gas or reaction product gas.

Abstract: A method of fabricating silicon carbide powder according to the embodiment comprises the steps of preparing a mixture by mixing a silicon source comprising silicon, a silicon carbide source and a carbone source comprising at least one of a solid carbon and a organic compound; and reacting the mixture.

Abstract: A vacuum heat treatment apparatus according to the embodiment comprises a chamber; a thermal insulator in the chamber; a reaction container in the thermal insulator; a heating member between the reaction container and the the thermal insulator for heating the reaction container; and a temperature measuring member in or on a surface of the reaction container, wherein the temperature measuring member comprises a thermocouple and a protective tube surrounding the thermocouple, and the protective tube comprises tungsten (W), tantalum (Ta), or silicon carbide (SiC).

Abstract: A heat treatment container for a vacuum heat treatment apparatus according to an exemplary embodiment includes a bottom portion and a sidewall, and a support protruding inward.

Abstract: Disclosed are a silicon carbide and a method for manufacturing the same. The method for manufacturing silicon carbide includes mixing a silicon source with a carbon source, and heating a mixture of the silicon and carbon sources to form the silicon carbide. At least one of the silicon source and the carbon source has an average grain size of about 10 nm to about 100 nm.

Abstract: Provided is a method for manufacturing silicon carbide. The method includes mixing a dry silicon source, a solid carbon source, and a binder with each other and heating the mixed source to form silicon carbide.

Abstract: Provided is a heat treatment container for a vacuum heat treatment apparatus. The heat treatment container includes a bottom and a sidewall. An exhaust passage is defined in an upper portion of the sidewall.

Abstract: Disclosed herein is a high-purity carbon silicon pulverulent body manufacturing method and system. That is, a high-purity carbon silicon pulverulent body manufacturing method of the present invention includes the step of producing a mixture consisting of silicon sources and carbon sources in a mixer; and the step of synthesizing silicon carbide (SiC) pulverulent body by heating the mixture at a vacuum degree of larger than 0.03 torr and equal to and less than 0.5 torr and at a temperature of equal to or larger than 1300° C. and equal to and less than 1900° C.