Abstract: A semiconductor die has an insulating material disposed in a peripheral region around the die. A blind via is formed through the gap. A conductive material is deposited in the blind via to form a conductive via. A conductive layer is formed between the conductive via and contact pad on the semiconductor die. A protective layer is formed over the front side of the semiconductor die. A portion of the insulating material and conductive via is removed from a backside of the semiconductor die opposite the front side of the semiconductor die so that a thickness of the conductive via is less than a thickness of the semiconductor wafer. The insulating material and conductive via are tapered. The wafer is singulated through the gap to separate the semiconductor die. A plurality of semiconductor die can be stacked and electrically interconnected through the conductive vias.

Abstract: A system and method of manufacture of an integrated circuit packaging system includes: a leadframe having a side solderable lead with a half-etched lead portion and a lead top side; a mold body directly on the leadframe and the side solderable lead, the lead top side of the side solderable lead exposed from the mold body; a mold groove in the mold body and in a portion of the side solderable lead for exposing a lead protrusion of the side solderable lead on an upper perimeter side of the mold body; and the half-etched lead portion exposed from a lower perimeter side of the mold body.

Abstract: A method of manufacture of an integrated circuit packaging system includes: providing a lead-frame having a metal connector mounted thereon and having a peripheral mounting region; forming an insulation cover on the lead-frame and on the metal connector; connecting an integrated circuit die over the insulation cover; forming a top encapsulation on the integrated circuit die with the peripheral mounting region exposed from the top encapsulation; forming a routing layer, having a conductive land, from the lead-frame; and forming a bottom encapsulation partially encapsulating the routing layer and the insulation cover.

Abstract: A method of manufacture of an integrated circuit packaging system includes: forming a thermal attach cluster includes: forming a heat collector having a heat dissipation surface, forming a cluster bridge, having a thermal surface, connected to the heat collector, forming a cluster pad, having an attachment surface, connected to the end of the cluster bridge opposite the heat collector; connecting an integrated circuit to the thermal attach cluster; and forming an encapsulation over the thermal attach cluster with the heat dissipation surface, the thermal surface, and the attachment surface exposed from and coplanar with the encapsulation.

Abstract: A semiconductor device includes a first substrate. A first semiconductor die is mounted to the first substrate. A bond wire electrically connects the first semiconductor die to the first substrate. A first encapsulant is deposited over the first semiconductor die, bond wire, and first substrate. The first encapsulant includes a penetrable, thermally conductive material. In one embodiment, the first encapsulant includes a viscous gel. A second substrate is mounted over a first surface of the first substrate. A second semiconductor die is mounted to the second substrate. The second semiconductor die is electrically connected to the first substrate. The first substrate is electrically connected to the second substrate. A second encapsulant is deposited over the first semiconductor die and second semiconductor die. An interconnect structure is formed on a second surface of the first substrate, opposite the first surface of the first substrate.

Abstract: A method of manufacture of an integrated circuit packaging system includes: mounting a device mounting structure over a bottom substrate; mounting a heat spreader having an opening formed by a single integral structure with a dam and a flange, the dam having a dam height greater than a flange height of the flange; and forming a package encapsulation over the device mounting structure and the bottom substrate with the device mounting structure exposed within the opening.

Abstract: A method of manufacture of an integrated circuit packaging system includes: forming a lead array having an innermost space with an innermost lead having an inner lead profile different around an inner non-horizontal side of the innermost lead; forming a middle lead having a middle lead profile the same around a lead side of the middle lead; placing an integrated circuit in the innermost space adjacent to the innermost lead; and forming a package encapsulation over the integrated circuit, the innermost lead, and the middle lead.

Abstract: A semiconductor die has a first semiconductor die mounted to a carrier. A plurality of conductive pillars is formed over the carrier around the first die. An encapsulant is deposited over the first die and conductive pillars. A first stepped interconnect layer is formed over a first surface of the encapsulant and first die. The first stepped interconnect layer has a first opening. A second stepped interconnect layer is formed over the first stepped interconnect layer. The second stepped interconnect layer has a second opening. The carrier is removed. A build-up interconnect structure is formed over a second surface of the encapsulant and first die. A second semiconductor die over the first semiconductor die and partially within the first opening. A third semiconductor die is mounted over the second die and partially within the second opening. A fourth semiconductor die is mounted over the second stepped interconnect layer.

Abstract: A semiconductor package includes a semiconductor wafer having a plurality of semiconductor die. A contact pad is formed over and electrically connected to an active surface of the semiconductor die. A gap is formed between the semiconductor die. An insulating material is deposited in the gap between the semiconductor die. An adhesive layer is formed over a surface of the semiconductor die and the insulating material. A via is formed in the insulating material and the adhesive layer. A conductive material is deposited in the via to form a through hole via (THV). A conductive layer is formed over the contact pad and the THV to electrically connect the contact pad and the THV. The plurality of semiconductor die is singulated. The insulating material can include an organic material. The active surface of the semiconductor die can include an optical device.

Abstract: A method of manufacture of an integrated circuit packaging system includes: providing a leadframe having a trench; mounting an integrated circuit device on the leadframe; forming a top encapsulation on the leadframe and the trench; forming a lead having a lead protrusion and a peripheral groove, the lead protrusion and the peripheral groove formed from etching the trench at a leadframe bottom side; and forming a bottom encapsulation surrounding a lead bottom side of the lead.

Abstract: A semiconductor device has a substrate including a base and a plurality of conductive posts extending from the base. A semiconductor die is disposed on a surface of the base between the conductive posts. An interconnect structure is formed over the semiconductor die and conductive posts. An adhesive layer is disposed over the semiconductor die. A conductive layer is disposed over the adhesive layer. An encapsulant is deposited over the semiconductor die and around the conductive posts. One or more conductive posts are electrically isolated from the substrate. The conductive layer is a removable or sacrificial cap layer. The substrate includes a wafer-shape, panel, or singulated form. The semiconductor die is disposed below a height of the conductive posts. An interconnect structure is formed over the semiconductor die, encapsulant, and conductive posts.

Abstract: A semiconductor device has a first semiconductor die with a shielding layer formed over its back surface. The first semiconductor die is mounted to a carrier. A first insulating layer is formed over the shielding layer. A second semiconductor die is mounted over the first semiconductor die separated by the shielding layer and first insulating layer. A second insulating layer is deposited over the first and second semiconductor die. A first interconnect structure is formed over the second semiconductor die and second insulating layer. A second interconnect structure is formed over the first semiconductor die and second insulating layer. The shielding layer is electrically connected to a low-impedance ground point through a bond wire, RDL, or TSV. The second semiconductor die may also have a shielding layer formed on its back surface. The semiconductor die are bonded through the metal-to-metal shielding layers.

Abstract: A semiconductor device has conductive pillars formed over a carrier. A first semiconductor die is mounted over the carrier between the conductive pillars. An encapsulant is deposited over the first semiconductor die and carrier and around the conductive pillars. A recess is formed in a first surface of the encapsulant over the first semiconductor die. The recess has sloped or stepped sides. A first interconnect structure is formed over the first surface of the encapsulant. The first interconnect structure follows a contour of the recess in the encapsulant. The carrier is removed. A second interconnect structure is formed over a second surface of the encapsulant and first semiconductor die. The first and second interconnect structures are electrically connected to the conductive pillars. A second semiconductor die is mounted in the recess. A third semiconductor die is mounted over the recess and second semiconductor die.

Abstract: A leadless package system includes: an integrated circuit die having contact pads; external contact terminals with a conductive layer and an external coating layer; connections between contact pads in the integrated circuit die and the external contact terminals; and an encapsulant encapsulates the integrated circuit die and the external contact terminals including the external coating layer.

Abstract: A system and method for manufacturing an integrated circuit packaging system includes: forming a base substrate including: providing a sacrificial carrier: mounting a metallic sheet on the sacrificial carrier, applying a top trace to the metallic sheet, forming a conductive stud on the top trace, forming a base encapsulation over the metallic sheet, the top trace, and the conductive stud, the top trace exposed from a top surface of the base encapsulation, and removing the sacrificial carrier and the metallic sheet; mounting an integrated circuit device on the base substrate; and encapsulating the integrated circuit device and the base substrate with a top encapsulation.

Abstract: A method of manufacture of an integrated circuit packaging system includes: providing a leadframe with a grid lead and a support pad; connecting a redistribution layer to the grid lead, the redistribution layer over the support pad; mounting an integrated circuit over the redistribution layer; applying an encapsulation on the redistribution layer, the redistribution layer in an interior area of the leadframe and the interior area under the integrated circuit; forming a support pad residue on the bottom surface of the redistribution layer by removing the support pad under the encapsulation and the interior redistribution layer; and forming an insulation layer on the support pad residue and the grid lead.

Abstract: A semiconductor device has conductive pillars formed over a carrier. A first semiconductor die is mounted over the carrier between the conductive pillars. An encapsulant is deposited over the first semiconductor die and carrier and around the conductive pillars. A recess is formed in a first surface of the encapsulant over the first semiconductor die. The recess has sloped or stepped sides. A first interconnect structure is formed over the first surface of the encapsulant. The first interconnect structure follows a contour of the recess in the encapsulant. The carrier is removed. A second interconnect structure is formed over a second surface of the encapsulant and first semiconductor die. The first and second interconnect structures are electrically connected to the conductive pillars. A second semiconductor die is mounted in the recess. A third semiconductor die is mounted over the recess and second semiconductor die.

Abstract: A semiconductor wafer contains a plurality of die with contact pads disposed on a first surface of each die. Metal vias are formed in trenches in the saw street guides and are surrounded by organic material. Traces connect the contact pads and metal vias. The metal vias can be half-circle vias or full-circle vias. Metal vias are also formed through the contact pads on the active area of the die. Redistribution layers (RDL) are formed on a second surface of the die opposite the first surface. Repassivation layers are formed between the RDL for electrical isolation. The die are stackable and can be placed in a semiconductor package with other die. The vias through the saw streets and vias through the active area of the die, as well as the RDL, provide electrical interconnect to the adjacent die.

Abstract: An integrated circuit packaging system and method of manufacture thereof including: providing a leadframe having unprocessed leads; depositing an etch mask on a top surface of the unprocessed leads, the unprocessed leads having the etch mask and an unmasked portions of the top surface; connecting an integrated circuit die to the unprocessed leads; encapsulating with a package body the leadframe, the top surface of the unprocessed leads exposed from the package body; forming side-solderable leads including forming a groove in the unprocessed leads, the groove formed under a portion of the etch mask including forming an overhang of the etch mask over the groove; removing the etch mask; and depositing a plating on the side-solderable leads.

Abstract: A method of manufacture of an integrated circuit packaging system includes: providing a die paddle, having paddle projections along a paddle peripheral side; forming a lead terminal having a lead extension with the lead extension extending towards the paddle peripheral side and between the paddle projections; mounting an integrated circuit over the die paddle; connecting the integrated circuit and the lead extension; and forming an encapsulation over the die paddle and covering the integrated circuit and lead extension.