Patents by Inventor Byung-Chul Cho
Byung-Chul Cho has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11875998Abstract: A substrate processing method uses a substrate processing apparatus including a process chamber defining a processing space in the process chamber, a substrate support mounted in the process chamber to place a substrate on the substrate support, a gas sprayer for supplying a process gas onto the substrate support in the processing space, and a remote plasma generator connected to the process chamber. The method includes placing the substrate on the substrate support, continuously supplying a surface processing gas through the remote plasma generator onto the substrate, continuously supplying a purge gas onto the substrate, supplying plasma power to the remote plasma generator to activate the surface processing gas and supply the activated surface processing gas onto the substrate, and cutting off the plasma power supplied to the remote plasma generator and supplying an etching gas onto the substrate.Type: GrantFiled: December 10, 2020Date of Patent: January 16, 2024Assignee: WONIK IPS CO., LTD.Inventors: Kwang Seon Jin, Jin Sung Chun, Sang Jun Park, Byung Chul Cho, Jun Hyuck Kwon
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Patent number: 11819710Abstract: The present invention relates to a method, a device, and a program for calculating a brachytherapy plan, and a brachytherapy apparatus. The method comprises: a step in which a computer obtains the number of radiation irradiation spots on the basis of radiation irradiation information (a radiation irradiation spot number obtaining step (S200)); a step in which the computer obtains target area information from a body model of a patient generated on the basis of medical image data of the patient (a target area information obtaining step (S400)); and a therapy plan calculating step (S600) in which the computer calculates, on the basis of the radiation irradiation information and the target area information, the radiation irradiation spots to which radiation is irradiated and the time length of irradiation to each radiation irradiation spot.Type: GrantFiled: December 3, 2020Date of Patent: November 21, 2023Assignees: THE ASAN FOUNDATION, UNIVERSITY OF ULSAN FOUNDATION FOR INDUSTRY COOPERATION, NATIONAL CANCER CENTER, THE INDUSTRY & ACADEMIC COOPERATION IN CHUNGNAM NATIONAL UNIVERSITY, KOREA INSTITUTE OF RADIOLOGICAL & MEDICAL SCIENCESInventors: Ho Jin Kim, Jung Won Kwak, Byung Chul Cho, Sang Wook Lee, Chi Young Jeong, Young Kyung Lim, Ui Jung Hwang, Sang Hyoun Choi
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Publication number: 20230343609Abstract: A substrate processing method using a substrate processing apparatus which comprises a process chamber in which a reaction space is formed to process a substrate in which a composite layer pattern having a plurality of first insulating layers and a plurality of second insulating layers alternately stacked thereon is formed, a substrate support unit, a gas distribution unit, and a plasma reactor, the method comprising the steps of: heating the substrate support unit and the gas distribution unit such that a temperature of the gas distribution unit is maintained equal to or lower than a temperature of the substrate support unit; supplying a reactive gas including a halogen-containing gas to the plasma reactor; generating radicals by applying power to the plasma reactor to activate the halogen-containing gas; and at least partially etching the plurality of first insulating layers in a lateral direction selectively with respect to the plurality of second insulating layers by supplying the radicals onto the substrType: ApplicationFiled: December 21, 2022Publication date: October 26, 2023Applicant: WONIK IPS CO., LTD.Inventors: Min Su KIM, Sang Jun PARK, Ju Hwan PARK, Byung Chul CHO, Kwang Seon JIN
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Patent number: 11784029Abstract: A method for atomic layer etching may include a step of providing a substrate on which a material to be etched is formed, a modifying step of controlling the substrate at a first temperature and modifying a surface layer of the material to be removed by supplying a modifying gas to the substrate, and an etching step of controlling the substrate at a second temperature different from the first temperature and removing the modified surface layer by supplying an etching gas to the substrate.Type: GrantFiled: July 2, 2021Date of Patent: October 10, 2023Assignee: WONIK IPS CO., LTD.Inventors: Kwang Seon Jin, Sang Jun Park, Byung Chul Cho, Jun Hyuck Kwon, Jong Ki An, Tian Hao Han
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Patent number: 11450531Abstract: The present invention relates to an atomic layer etching method for etching a surface of a substrate by using an atomic layer etching apparatus.Type: GrantFiled: December 17, 2020Date of Patent: September 20, 2022Assignee: WONIK IPS CO., LTD.Inventors: Jun Hyuck Kwon, Jin Sung Chun, Sang Jun Park, Byung Chul Cho, Kwang Seon Jin
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Publication number: 20220059325Abstract: A method for atomic layer etching may include a step of providing a substrate on which a material to be etched is formed, a modifying step of controlling the substrate at a first temperature and modifying a surface layer of the material to be removed by supplying a modifying gas to the substrate, and an etching step of controlling the substrate at a second temperature different from the first temperature and removing the modified surface layer by supplying an etching gas to the substrate.Type: ApplicationFiled: July 2, 2021Publication date: February 24, 2022Applicant: WONIK IPS CO., LTD.Inventors: Kwang Seon JIN, Sang Jun PARK, Byung Chul CHO, Jun Hyuck KWON, Jong Ki AN, Tian Hao HAN
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Publication number: 20210193472Abstract: A substrate processing method uses a substrate processing apparatus including a process chamber defining a processing space in the process chamber, a substrate support mounted in the process chamber to place a substrate on the substrate support, a gas sprayer for supplying a process gas onto the substrate support in the processing space, and a remote plasma generator connected to the process chamber. The method includes placing the substrate on the substrate support, continuously supplying a surface processing gas through the remote plasma generator onto the substrate, continuously supplying a purge gas onto the substrate, supplying plasma power to the remote plasma generator to activate the surface processing gas and supply the activated surface processing gas onto the substrate, and cutting off the plasma power supplied to the remote plasma generator and supplying an etching gas onto the substrate.Type: ApplicationFiled: December 10, 2020Publication date: June 24, 2021Applicant: WONIK IPS CO., LTD.Inventors: Kwang Seon JIN, Jin Sung CHUN, Sang Jun PARK, Byung Chul CHO, Jun Hyuck KWON
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Publication number: 20210193473Abstract: The present invention relates to an atomic layer etching method for etching a surface of a substrate by using an atomic layer etching apparatus.Type: ApplicationFiled: December 17, 2020Publication date: June 24, 2021Applicant: WONIK IPS CO., LTD.Inventors: Jun Hyuck KWON, Jin Sung CHUN, Sang Jun PARK, Byung Chul CHO, Kwang Seon JIN
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Patent number: 10985015Abstract: Disclosed is a technology relating to a method for fabricating a multilayer structure. In the method for fabricating the multilayer structure according to the disclosed embodiment, a first material layer including at least one atomic layer is deposited using a first source gas, which includes a first component, and an oxygen-containing reactive gas which is reactive with the first source gas. On the first material layer, a second material layer including at least one atomic layer is deposited using a second source gas, which includes a second component different from the first component, and an oxygen-containing reactive gas which is reactive with the second source gas. The step of depositing the first material layer and the step of depositing the second material layer constitute one cycle, and the cycle is performed at least once.Type: GrantFiled: September 28, 2017Date of Patent: April 20, 2021Assignee: WONIK IPS CO., LTD.Inventors: In Hwan Yi, Kwang Seon Jin, Byung Chul Cho, Jin Sung Chun
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Publication number: 20210085998Abstract: The present invention relates to a method, a device, and a program for calculating a brachytherapy plan, and a brachytherapy apparatus. The method comprises: a step in which a computer obtains the number of radiation irradiation spots on the basis of radiation irradiation information (a radiation irradiation spot number obtaining step (S200)); a step in which the computer obtains target area information from a body model of a patient generated on the basis of medical image data of the patient (a target area information obtaining step (S400)); and a therapy plan calculating step (S600) in which the computer calculates, on the basis of the radiation irradiation information and the target area information, the radiation irradiation spots to which radiation is irradiated and the time length of irradiation to each radiation irradiation spot.Type: ApplicationFiled: December 3, 2020Publication date: March 25, 2021Applicants: THE ASAN FOUNDATION, UNIVERSITY OF ULSAN FOUNDATION FOR INDUSTRY COOPERATION, NATIONAL CANCER CENTER, THE INDUSTRY & ACADEMIC COOPERATION IN CHUNGNAM NATIONAL UNIVERSITY, KOREA INSTITUTE OF RADIOLOGICAL & MEDICAL SCIENCESInventors: Ho Jin KIM, Jung Won KWAK, Byung Chul CHO, Sang Wook LEE, Chi Young JEONG, Young Kyung LIM, Ui Jung HWANG, Sang Hyoun CHOI
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Patent number: 10902652Abstract: A method of reducing an artifact by using structural similarity. The method includes at least: obtaining a plurality of input Computed Tomography (CT) images including a first CT image and a second CT image, generating an artifact map in which anatomical information is removed and artifacts information is remained, by subtracting the second. CT image from the first CT image, generating, by the computer, a structural similarity map between each CT image and the artifact map, and generating, by the computer, a final reconstructed image by comparing particular parts on images of a plurality of structural similarity maps with each other and selecting data of an input CT image which has been used to generate a particular part of a structural similarity map having a lowest degree of structural similarity, as data of a particular part on the final reconstructed image.Type: GrantFiled: July 30, 2018Date of Patent: January 26, 2021Assignees: THE ASAN FOUNDATION, UNIVERSITY OF ULSAN FOUNDATION FOR INDUSTRY COOPERATION, KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGYInventors: Jung Won Kwak, Sang Wook Lee, Byung Chul Cho, Chung Hwan Lee, Seungryong Cho, Changhwan Kim
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Patent number: 10758746Abstract: Disclosed are a radiotherapy assistant apparatus for modulating a build-up region of a photon beam for a radiotherapy, a radiotherapy system including the radiotherapy assistant apparatus, and method for the radiotherapy system. The radiotherapy assistant apparatus for modulating a build-up region of a photon beam for a radiotherapy, including at least: a magnetic field generator that generates a magnetic field that has a direction perpendicular to a movement direction of the photon beam, the magnetic field generator is disposed on a movement route along which the photon beam moves toward a target portion of the radiotherapy; and a magnetic field intensity adjuster that adjusts an intensity of the magnetic field generated by the magnetic field generator. The magnetic field generator disperses secondary electrons that have particular energy levels equal to or lower than a preset value.Type: GrantFiled: June 22, 2018Date of Patent: September 1, 2020Assignees: THE ASAN FOUNDATION, UNIVERSITY OF ULSAN FOUNDATION FOR INDUSTRY COOPERATIONInventors: Jung Won Kwak, Sang Wook Lee, Byung Chul Cho, Seung Do Ahn, Won Sik Choi, Woo Sang Ahn, Chi Young Jeong, Seong Soo Shin, Kyoung Jun Yoon
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Publication number: 20200043718Abstract: Disclosed is a technology relating to a method for fabricating a multilayer structure. In the method for fabricating the multilayer structure according to the disclosed embodiment, a first material layer including at least one atomic layer is deposited using a first source gas, which includes a first component, and an oxygen-containing reactive gas which is reactive with the first source gas. On the first material layer, a second material layer including at least one atomic layer is deposited using a second source gas, which includes a second component different from the first component, and an oxygen-containing reactive gas which is reactive with the second source gas. The step of depositing the first material layer and the step of depositing the second material layer constitute one cycle, and the cycle is performed at least once.Type: ApplicationFiled: September 28, 2017Publication date: February 6, 2020Applicant: WONIK IPS CO., LTD.Inventors: In Hwan YI, Kwang Seon JIN, Byung Chul CHO, Jin Sung CHUN
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Patent number: 10532225Abstract: Disclosed is a tumor surface dose enhancing radiotherapy apparatus using a magnetic field, including a radiation beam generating unit that irradiates a radiation beam towards a tumor of a patient, a magnetic field generating unit that forms a magnetic field that is parallel to the radiation beam between the radiation beam generating unit and the tumor of the patient, and a control unit that controls a surface dose of the tumor by adjusting an intensity and an effective area of the magnetic field of the magnetic field generating unit.Type: GrantFiled: December 7, 2018Date of Patent: January 14, 2020Assignee: THE ASAN FOUNDATIONInventors: Jung Won Kwak, Nurihyun Jung, Byung Chul Cho, Seung Do Ahn, Sang Wook Lee, Jae Beom Bae
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Patent number: 10381217Abstract: In a method of deposition a thin film, a substrate having a pattern may be provided. A surface of the substrate may be treated using a deposition-suppressing gas to form a deposition-suppressing layer on the pattern. A process gas may be applied to the pattern to deposit the thin film. The deposition-suppressing gas may include fluorine.Type: GrantFiled: November 17, 2017Date of Patent: August 13, 2019Assignee: WONIK IPS CO., LTD.Inventors: Byung Chul Cho, Sang Jin Lee, In Hwan Yi, Kwang Seon Jin
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Publication number: 20190118000Abstract: Disclosed is a tumor surface dose enhancing radiotherapy apparatus using a magnetic field, including a radiation beam generating unit that irradiates a radiation beam towards a tumor of a patient, a magnetic field generating unit that forms a magnetic field that is parallel to the radiation beam between the radiation beam generating unit and the tumor of the patient, and a control unit that controls a surface dose of the tumor by adjusting an intensity and an effective area of the magnetic field of the magnetic field generating unit.Type: ApplicationFiled: December 7, 2018Publication date: April 25, 2019Applicant: THE ASAN FOUNDATIONInventors: Jung Won KWAK, Nurihyun JUNG, Byung Chul CHO, Seung Do AHN, Sang Wook LEE, Jae Beom BAE
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Publication number: 20190043225Abstract: Disclosed are a method of reducing artifacts by using structural similarity and a program thereof. The method includes obtaining a plurality of input CT images by a computer, generating an artifact map by comparing the plurality of input CT images with each other by the computer, generating a structural similarity map between each CT image and the metal artifact map by the computer, and generating, by the computer, a final reconstructed image by comparing specific points on a plurality of structural similarity maps with each other and applying data of an input CT image used to generate a structural similarity map having a lowest degree of structural similarity as data of a specific point.Type: ApplicationFiled: July 30, 2018Publication date: February 7, 2019Applicants: THE ASAN FOUNDATION, UNIVERSITY OF ULSAN FOUNDATION FOR INDUSTRY COOPERATION, KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGYInventors: Jung Won KWAK, Sang Wook LEE, Byung Chul CHO, Chung Hwan LEE, Seungryong CHO, Changhwan KIM
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Patent number: 10188875Abstract: Disclosed is a tumor surface dose enhancing radiotherapy apparatus using a magnetic field, including a radiation beam generating unit that irradiates a radiation beam towards a tumor of a patient, a magnetic field generating unit that forms a magnetic field that is parallel to the radiation beam between the radiation beam generating unit and the tumor of the patient, and a control unit that controls a surface dose of the tumor by adjusting an intensity and an effective area of the magnetic field of the magnetic field generating unit.Type: GrantFiled: October 14, 2016Date of Patent: January 29, 2019Assignee: THE ASAN FOUNDATIONInventors: Jung Won Kwak, Nurihyun Jung, Byung Chul Cho, Seung Do Ahn, Sang Wook Lee, Jae Beom Bae
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Publication number: 20180369610Abstract: Disclosed are a radiotherapy assistant apparatus for modulating a build-up region of a photon beam for a radiotherapy, a radiotherapy system including the radiotherapy assistant apparatus, and method for the radiotherapy system. The radiotherapy assistant apparatus for modulating a build-up region of a photon beam for a radiotherapy, including at least: a magnetic field generator that generates a magnetic field that has a direction perpendicular to a movement direction of the photon beam, the magnetic field generator is disposed on a movement route along which the photon beam moves toward a target portion of the radiotherapy; and a magnetic field intensity adjuster that adjusts an intensity of the magnetic field generated by the magnetic field generator. The magnetic field generator disperses secondary electrons that have particular energy levels equal to or lower than a preset value.Type: ApplicationFiled: June 22, 2018Publication date: December 27, 2018Applicants: THE ASAN FOUNDATION, UNIVERSITY OF ULSAN FOUNDATION FOR INDUSTRY COOPERATIONInventors: Jung Won KWAK, Sang Wook LEE, Byung Chul CHO, Seung Do AHN, Won Sik CHOI, Woo Sang AHN, Chi Young JEONG, Seong Soo SHIN, Kyoung Jun YOON
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Publication number: 20180166270Abstract: In a method of deposition a thin film, a substrate having a pattern may be provided. A surface of the substrate may be treated using a deposition-suppressing gas to form a deposition-suppressing layer on the pattern. A process gas may be applied to the pattern to deposit the thin film. The deposition-suppressing gas may include fluorine.Type: ApplicationFiled: November 17, 2017Publication date: June 14, 2018Applicant: WONIK IPS CO., LTD.Inventors: Byung Chul CHO, Sang Jin LEE, In Hwan YI, Kwang Seon JIN