Patents by Inventor Calvin Sheen

Calvin Sheen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7875958
    Abstract: Structures include a tunneling device disposed over first and second lattice-mismatched semiconductor materials. Process embodiments include forming tunneling devices over lattice-mismatched materials.
    Type: Grant
    Filed: September 27, 2007
    Date of Patent: January 25, 2011
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Zhiyuan Cheng, Calvin Sheen
  • Publication number: 20100078680
    Abstract: Non-silicon based semiconductor devices are integrated into silicon fabrication processes by using aspect-ratio-trapping materials. Non-silicon light-sensing devices in a least a portion of a crystalline material can output electrons generated by light absorption therein. Exemplary light-sensing devices can have relatively large micron dimensions. As an exemplary application, complementary-metal-oxide-semiconductor photodetectors are formed on a silicon substrate by incorporating an aspect-ratio-trapping technique.
    Type: Application
    Filed: September 24, 2009
    Publication date: April 1, 2010
    Applicant: AMBERWAVE SYSTEMS CORPORATION
    Inventors: Zhiyuan Cheng, James G. Fiorenza, Calvin Sheen, Anthony Lochetefeld
  • Publication number: 20080257409
    Abstract: Structures including crystalline material disposed in openings defined in a non-crystalline mask layer disposed over a substrate. A photovoltaic cell may be disposed above the crystalline material.
    Type: Application
    Filed: April 9, 2008
    Publication date: October 23, 2008
    Applicant: AmberWave Systems Corporation
    Inventors: Jizhong Li, Anthony J. Lochtefeld, Calvin Sheen, Zhiyuan Cheng
  • Publication number: 20080073641
    Abstract: Structures include a tunneling device disposed over first and second lattice-mismatched semiconductor materials. Process embodiments include forming tunneling devices over lattice-mismatched materials.
    Type: Application
    Filed: September 27, 2007
    Publication date: March 27, 2008
    Applicant: AmberWave Systems Corporation
    Inventors: Zhiyuan Cheng, Calvin Sheen