Patents by Inventor Cancheepuram V. Srividya
Cancheepuram V. Srividya has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9627501Abstract: Graded dielectric layers and methods of fabricating such dielectric layers provide dielectrics in a variety of electronic structures for use in a wide range of electronic devices and systems. In an embodiment, a dielectric layer is graded with respect to a doping profile across the dielectric layer. In an embodiment, a dielectric layer is graded with respect to a crystalline structure profile across the dielectric layer. In an embodiment, a dielectric layer is formed by atomic layer deposition incorporating sequencing techniques to generate a doped dielectric material.Type: GrantFiled: January 28, 2015Date of Patent: April 18, 2017Assignee: Micron Technology, Inc.Inventors: F. Daniel Gealy, Vishwanath Bhat, Cancheepuram V. Srividya, M. Noel Rocklein
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Publication number: 20150137254Abstract: Graded dielectric layers and methods of fabricating such dielectric layers provide dielectrics in a variety of electronic structures for use in a wide range of electronic devices and systems. In an embodiment, a dielectric layer is graded with respect to a doping profile across the dielectric layer. In an embodiment, a dielectric layer is graded with respect to a crystalline structure profile across the dielectric layer. In an embodiment, a dielectric layer is formed by atomic layer deposition incorporating sequencing techniques to generate a doped dielectric material.Type: ApplicationFiled: January 28, 2015Publication date: May 21, 2015Inventors: F. Daniel Gealy, Vishwanath Bhat, Cancheepuram V. Srividya, M. Noel Rocklein
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Patent number: 8951903Abstract: Graded dielectric layers and methods of fabricating such dielectric layers provide dielectrics in a variety of electronic structures for use in a wide range of electronic devices and systems. In an embodiment, a dielectric layer is graded with respect to a doping profile across the dielectric layer. In an embodiment, a dielectric layer is graded with respect to a crystalline structure profile across the dielectric layer. In an embodiment, a dielectric layer is formed by atomic layer deposition incorporating sequencing techniques to generate a doped dielectric material.Type: GrantFiled: February 3, 2012Date of Patent: February 10, 2015Assignee: Micron Technology, Inc.Inventors: Dan Gealy, Vishwanath Bhat, Cancheepuram V. Srividya, M. Noel Rocklein
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Patent number: 8722480Abstract: Transistors are provided including first and second source/drain regions, a channel region and a gate stack having a first gate dielectric over a substrate, the first gate dielectric having a dielectric constant higher than a dielectric constant of silicon dioxide, and a metal material in contact with the first gate dielectric, the metal material being doped with an inert element. Integrated circuits including the transistors and methods of forming the transistors are also provided.Type: GrantFiled: January 28, 2013Date of Patent: May 13, 2014Assignee: Micron Technology, Inc.Inventors: F. Daniel Gealy, Suraj J. Mathew, Cancheepuram V. Srividya
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Patent number: 8378430Abstract: Transistors are provided including first and second source/drain regions, a channel region and a gate stack having a first gate dielectric over a substrate, the first gate dielectric having a dielectric constant higher than a dielectric constant of silicon dioxide, and a metal material in contact with the first gate dielectric, the metal material being doped with an inert element. Integrated circuits including the transistors and methods of forming the transistors are also provided.Type: GrantFiled: February 12, 2010Date of Patent: February 19, 2013Assignee: Micron Technology, Inc.Inventors: Cancheepuram V. Srividya, Suraj Mathew, Dan Gealy
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Patent number: 8299462Abstract: The invention includes a dielectric mode from ALD-type methods in which two or more different precursors are utilized with one or more reactants to form the dielectric material. In particular aspects, the precursors are aluminum and hafnium and/or zirconium for materials made from a hafnium precursor, the hafnium oxide is predominantly in a tetragonal crystalline phase.Type: GrantFiled: October 25, 2011Date of Patent: October 30, 2012Assignee: Round Rock Research, LLCInventors: Cancheepuram V. Srividya, Noel Rocklein, John Vernon, Jeff Nelson, F. Daniel Gealy, David Korn
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Publication number: 20120202358Abstract: Graded dielectric layers and methods of fabricating such dielectric layers provide dielectrics in a variety of electronic structures for use in a wide range of electronic devices and systems. In an embodiment, a dielectric layer is graded with respect to a doping profile across the dielectric layer. In an embodiment, a dielectric layer is graded with respect to a crystalline structure profile across the dielectric layer. In an embodiment, a dielectric layer is formed by atomic layer deposition incorporating sequencing techniques to generate a doped dielectric material.Type: ApplicationFiled: February 3, 2012Publication date: August 9, 2012Inventors: Dan Gealy, Vishwanath Bhat, Cancheepuram V. Srividya, M. Noel Rocklein
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Publication number: 20120037902Abstract: The invention includes a dielectric mode from ALD-type methods in which two or more different precursors are utilized with one or more reactants to form the dielectric material. In particular aspects, the precursors are aluminum and hafnium and/or zirconium for materials made from a hafnium precursor, the hafnium oxide is predominantly in a tetragonal crystalline phase.Type: ApplicationFiled: October 25, 2011Publication date: February 16, 2012Applicant: Round Rock Research, LLCInventors: Cancheepuram V. Srividya, Noel Rocklein, John Vernon, Jeff Nelson, F. Daniel Gealy, David Korn
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Patent number: 8110469Abstract: Graded dielectric layers and methods of fabricating such dielectric layers provide dielectrics in a variety of electronic structures for use in a wide range of electronic devices and systems. In an embodiment, a dielectric layer is graded with respect to a doping profile across the dielectric layer. In an embodiment, a dielectric layer is graded with respect to a crystalline structure profile across the dielectric layer. In an embodiment, a dielectric layer is formed by atomic layer deposition incorporating sequencing techniques to generate a doped dielectric material.Type: GrantFiled: August 30, 2005Date of Patent: February 7, 2012Assignee: Micron Technology, Inc.Inventors: Dan Gealy, Vishwanath Bhat, Cancheepuram V. Srividya, M. Noel Rocklein
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Patent number: 8049304Abstract: The invention includes ALD-type methods in which two or more different precursors are utilized with one or more reactants to form a material. In particular aspects, the precursors are hafnium and aluminum, the only reactant is ozone, and the material is hafnium oxide predominantly in a tetragonal crystalline phase.Type: GrantFiled: April 13, 2009Date of Patent: November 1, 2011Assignee: Round Rock Research, LLCInventors: Cancheepuram V. Srividya, Noel Rocklein, John Vernon, Jeff Nelson, F. Daniel Gealy, David Korn
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Publication number: 20110198708Abstract: Transistors are provided including first and second source/drain regions, a channel region and a gate stack having a first gate dielectric over a substrate, the first gate dielectric having a dielectric constant higher than a dielectric constant of silicon dioxide, and a metal material in contact with the first gate dielectric, the metal material being doped with an inert element. Integrated circuits including the transistors and methods of forming the transistors are also provided.Type: ApplicationFiled: February 12, 2010Publication date: August 18, 2011Inventors: Cancheepuram V Srividya, Suraj Mathew, Dan Gealy
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Patent number: 7687844Abstract: The invention includes a method of depositing a noble metal. A substrate is provided. The substrate has a first region and a second region. The first and second regions are exposed to a mixture comprising a precursor of a noble metal and an oxidant. During the exposure, a layer containing the noble metal is selectively deposited onto the first region relative to the second region. In particular applications, the first region can comprise borophosphosilicate glass, and the second region can comprise either aluminum oxide or doped non-oxidized silicon. The invention also includes capacitor constructions and methods of forming capacitor constructions.Type: GrantFiled: March 20, 2008Date of Patent: March 30, 2010Assignee: Micron Technology, Inc.Inventors: Cancheepuram V. Srividya, F. Daniel Gealy, Thomas M. Graettinger
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Publication number: 20090195967Abstract: The invention includes ALD-type methods in which two or more different precursors are utilized with one or more reactants to form a material. In particular aspects, the precursors are hafnium and aluminum, the only reactant is ozone, and the material is hafnium oxide predominantly in a tetragonal crystalline phase.Type: ApplicationFiled: April 13, 2009Publication date: August 6, 2009Applicant: MICRON TECHNOLOGY, INC.Inventors: Cancheepuram V. Srividya, Noel Rocklein, John Vernon, Jeff Nelson, F. Daniel Gealy, David Korn
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Patent number: 7537804Abstract: In some embodiments, the invention may include utilization of at least one iteration of an ALD pulse sequence that has the pulse subsets M2-M1-R- and M1-(R-M2-)x: where x is at least 2; where M1 is a first metal-containing precursor comprising a first metal, M2 is a second metal-containing precursor comprising a second metal different from the first metal, and R is a reactant which reacts with one or both of the first and second metals. The ALD pulse sequence forms material over a substrate, and such material includes the first and second metals. The hyphen between pulses means that the second pulse directly follows the first pulse, with the term “directly follows” indicating that the second pulse either immediately follows the first pulse or that only a purge separates the first and second pulses.Type: GrantFiled: April 28, 2006Date of Patent: May 26, 2009Assignee: Micron Technology, Inc.Inventors: Cancheepuram V. Srividya, Noel Rocklein, John Vernon, Jeff Nelson, F. Daniel Gealy, David Korn
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Patent number: 7439564Abstract: The invention includes constructions having two dielectric layers over a conductively-doped semiconductive material. One of the dielectric layers contains aluminum oxide, and the other contains a metal oxide other than aluminum oxide (such metal oxide can be, for example, one or more of hafnium oxide, tantalum oxide, titanium oxide and zirconium oxide). The layer containing aluminum oxide is between the layer containing metal oxide and the conductively-doped semiconductive material. The invention includes capacitor devices having one electrode containing conductively-doped silicon and another electrode containing one or more metals and/or metal compounds. At least two dielectric layers are formed between the two capacitor electrodes, with one of the dielectric layers containing aluminum oxide and the other containing a metal oxide other than aluminum oxide. The invention also includes methods of forming capacitor constructions.Type: GrantFiled: May 5, 2005Date of Patent: October 21, 2008Assignee: Micron Technology, Inc.Inventors: Vishwanath Bhat, F. Daniel Gealy, Cancheepuram V. Srividya
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Publication number: 20080166572Abstract: The invention includes a method of depositing a noble metal. A substrate is provided. The substrate has a first region and a second region. The first and second regions are exposed to a mixture comprising a precursor of a noble metal and an oxidant. During the exposure, a layer containing the noble metal is selectively deposited onto the first region relative to the second region. In particular applications, the first region can comprise borophosphosilicate glass, and the second region can comprise either aluminum oxide or doped non-oxidized silicon. The invention also includes capacitor constructions and methods of forming capacitor constructions.Type: ApplicationFiled: March 20, 2008Publication date: July 10, 2008Inventors: Cancheepuram V. Srividya, F. Daniel Gealy, Thomas M. Graettinger
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Patent number: 7372094Abstract: The invention includes a method of depositing a noble metal. A substrate is provided. The substrate has a first region and a second region. The first and second regions are exposed to a mixture comprising a precursor of a noble metal and an oxidant. During the exposure, a layer containing the noble metal is selectively deposited onto the first region relative to the second region. In particular applications, the first region can comprise borophosphosilicate glass, and the second region can comprise either aluminum oxide or doped non-oxidized silicon. The invention also includes capacitor constructions and methods of forming capacitor constructions.Type: GrantFiled: October 31, 2006Date of Patent: May 13, 2008Assignee: Micron Technology, Inc.Inventors: Cancheepuram V. Srividya, F. Daniel Gealy, Thomas M. Graettinger
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Patent number: 7141847Abstract: The invention includes a method of depositing a noble metal. A substrate is provided. The substrate has a first region and a second region. The first and second regions are exposed to a mixture comprising a precursor of a noble metal and an oxidant. During the exposure, a layer containing the noble metal is selectively deposited onto the first region relative to the second region. In particular applications, the first region can comprise borophosphosilicate glass, and the second region can comprise either aluminum oxide or doped non-oxidized silicon. The invention also includes capacitor constructions and methods of forming capacitor constructions.Type: GrantFiled: December 17, 2004Date of Patent: November 28, 2006Assignee: Micron Technology, Inc.Inventors: Cancheepuram V. Srividya, F. Daniel Gealy, Thomas M. Graettinger
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Patent number: 7115929Abstract: The invention includes constructions having two dielectric layers over a conductively-doped semiconductive material. One of the dielectric layers contains aluminum oxide, and the other contains a metal oxide other than aluminum oxide (such metal oxide can be, for example, one or more of hafnium oxide, tantalum oxide, titanium oxide and zirconium oxide). The layer containing aluminum oxide is between the layer containing metal oxide and the conductively-doped semiconductive material. The invention includes capacitor devices having one electrode containing conductively-doped silicon and another electrode containing one or more metals and/or metal compounds. At least two dielectric layers are formed between the two capacitor electrodes, with one of the dielectric layers containing aluminum oxide and the other containing a metal oxide other than aluminum oxide. The invention also includes methods of forming capacitor constructions.Type: GrantFiled: April 8, 2004Date of Patent: October 3, 2006Assignee: Micron Technology, Inc.Inventors: Vishwanath Bhat, F. Daniel Gealy, Cancheepuram V. Srividya
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Patent number: 6858894Abstract: The invention includes a method of depositing a noble metal. A substrate is provided. The substrate has a first region and a second region. The first and second regions are exposed to a mixture comprising a precursor of a noble metal and an oxidant. During the exposure, a layer containing the noble metal is selectively deposited onto the first region relative to the second region. In particular applications, the first region can comprise borophosphosilicate glass, and the second region can comprise either aluminum oxide or doped non-oxidized silicon. The invention also includes capacitor constructions and methods of forming capacitor constructions.Type: GrantFiled: February 9, 2004Date of Patent: February 22, 2005Assignee: Micron Technology, Inc.Inventors: Cancheepuram V. Srividya, F. Daniel Gealy, Thomas M. Graettinger