Patents by Inventor Cara Beasley

Cara Beasley has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200148540
    Abstract: A method for carbon nanotube purification, preferably including: providing carbon nanotubes; depositing a mask; and/or selectively removing a portion of the mask; and optionally including removing a subset of the carbon nanotubes and/or removing the remaining mask.
    Type: Application
    Filed: August 20, 2019
    Publication date: May 14, 2020
    Inventors: John Provine, Cara Beasley, Gregory Pitner
  • Publication number: 20200142292
    Abstract: An extreme ultraviolet mask and method of manufacture thereof includes: providing a glass-ceramic block; forming a glass-ceramic substrate from the glass-ceramic block; and depositing a planarization layer on the glass-ceramic substrate.
    Type: Application
    Filed: December 19, 2019
    Publication date: May 7, 2020
    Inventors: Ralf Hofmann, Majeed A. Foad, Cara Beasley
  • Patent number: 10633253
    Abstract: A method for carbon nanotube purification, preferably including: providing carbon nanotubes; depositing a mask; and/or selectively removing a portion of the mask; and optionally including removing a subset of the carbon nanotubes and/or removing the remaining mask.
    Type: Grant
    Filed: August 20, 2019
    Date of Patent: April 28, 2020
    Assignee: Aligned Carbon, Inc.
    Inventors: John Provine, Cara Beasley, Gregory Pitner
  • Publication number: 20200058213
    Abstract: An extreme ultraviolet (EUV) mask blank production system includes: a substrate handling vacuum chamber for creating a vacuum; a substrate handling platform, in the vacuum, for transporting an ultra-low expansion substrate loaded in the substrate handling vacuum chamber; and multiple sub-chambers, accessed by the substrate handling platform, for forming an EUV mask blank includes: a multi-layer stack, formed above the ultra-low expansion substrate, for reflecting an extreme ultraviolet (EUV) light, and an absorber layer, formed above the multi-layer stack, for absorbing the EUV light at a wavelength of 13.5 nm includes the absorber layer has a thickness of less than 80 nm and less than 2% reflectivity.
    Type: Application
    Filed: December 14, 2018
    Publication date: February 20, 2020
    Applicant: Applied Materials, Inc.
    Inventors: Vinayak Vishwanath Hassan, Majeed A. Foad, Cara Beasley, Ralf Hofmann
  • Patent number: 10551732
    Abstract: An extreme ultraviolet (EUV) mask blank production system includes: a substrate handling vacuum chamber for creating a vacuum; a substrate handling platform, in the vacuum, for transporting an ultra-low expansion substrate loaded in the substrate handling vacuum chamber; and multiple sub-chambers, accessed by the substrate handling platform, for forming an EUV mask blank includes: a multi-layer stack, formed above the ultra-low expansion substrate, for reflecting an extreme ultraviolet (EUV) light, and an absorber layer, formed above the multi-layer stack, for absorbing the EUV light at a wavelength of 13.5 nm includes the absorber layer has a thickness of less than 80 nm and less than 2% reflectivity.
    Type: Grant
    Filed: December 14, 2018
    Date of Patent: February 4, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Vinayak Vishwanath Hassan, Majeed A. Foad, Cara Beasley, Ralf Hofmann
  • Patent number: 10551731
    Abstract: An extreme ultraviolet mask and method of manufacture thereof includes: providing a glass-ceramic block; forming a glass-ceramic substrate from the glass-ceramic block; and depositing a planarization layer on the glass-ceramic substrate.
    Type: Grant
    Filed: December 19, 2014
    Date of Patent: February 4, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Ralf Hofmann, Majeed Foad, Cara Beasley
  • Publication number: 20190130731
    Abstract: An extreme ultraviolet (EUV) mask blank production system includes: a substrate handling vacuum chamber for creating a vacuum; a substrate handling platform, in the vacuum, for transporting an ultra-low expansion substrate loaded in the substrate handling vacuum chamber; and multiple sub-chambers, accessed by the substrate handling platform, for forming an EUV mask blank includes: a multi-layer stack, formed above the ultra-low expansion substrate, for reflecting an extreme ultraviolet (EUV) light, and an absorber layer, formed above the multi-layer stack, for absorbing the EUV light at a wavelength of 13.5 nm includes the absorber layer has a thickness of less than 80 nm and less than 2% reflectivity.
    Type: Application
    Filed: December 14, 2018
    Publication date: May 2, 2019
    Applicant: Applied Materials, Inc.
    Inventors: Vinayak Vishwanath Hassan, Majeed A. Foad, Cara Beasley, Ralf Hofmann
  • Patent number: 10209613
    Abstract: An integrated extreme ultraviolet (EUV) blank production system includes: a vacuum chamber for placing a substrate in a vacuum; a first deposition system for depositing a planarization layer having a planarized top surface over the substrate; and a second deposition system for depositing a multi-layer stack on the planarization layer without removing the substrate from the vacuum. The EUV blank is in an EUV lithography system includes: an extreme ultraviolet light source; a mirror for directing light from the EUV source; a reticle stage for placing a EUV mask blank with a planarization layer; and a wafer stage for placing a wafer. The EUV blank includes: a substrate; a planarization layer to compensate for imperfections related to the surface of the substrate, the planarization layer having a flat top surface; and a multi-layer stack on the planarization layer.
    Type: Grant
    Filed: May 27, 2016
    Date of Patent: February 19, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Cara Beasley, Ralf Hofmann, Majeed Foad, Timothy Michaelson
  • Patent number: 10197907
    Abstract: An extreme ultraviolet (EUV) mask blank production system includes: a substrate handling vacuum chamber for creating a vacuum; a substrate handling platform, in the vacuum, for transporting an ultra-low expansion substrate loaded in the substrate handling vacuum chamber; and multiple sub-chambers, accessed by the substrate handling platform, for forming an EUV mask blank includes: a multi-layer stack, formed above the ultra-low expansion substrate, for reflecting an extreme ultraviolet (EUV) light, and an absorber layer, formed above the multi-layer stack, for absorbing the EUV light at a wavelength of 13.5 nm includes the absorber layer has a thickness of less than 80 nm and less than 2% reflectivity.
    Type: Grant
    Filed: February 21, 2017
    Date of Patent: February 5, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Vinayak Vishwanath Hassan, Majeed A. Foad, Cara Beasley, Ralf Hofmann
  • Patent number: 10012908
    Abstract: An apparatus and method of manufacture of an extreme ultraviolet reflective element includes: a substrate; a multilayer stack on the substrate, the multilayer stack includes a plurality of reflective layer pairs having a first reflective layer formed from silicon and a second reflective layer formed from niobium or niobium carbide for forming a Bragg reflector; and a capping layer on and over the multilayer stack for protecting the multilayer stack by reducing oxidation and mechanical erosion.
    Type: Grant
    Filed: January 19, 2017
    Date of Patent: July 3, 2018
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Ralf Hofmann, Vinayak Vishwanath Hassan, Cara Beasley, Majeed A. Foad
  • Patent number: 10012897
    Abstract: An extreme ultraviolet (EUV) mask blank production system includes: a substrate handling vacuum chamber for creating a vacuum; a substrate handling platform, in the vacuum, for transporting an ultra-low expansion substrate loaded in the substrate handling vacuum chamber; and multiple sub-chambers, accessed by the substrate handling platform, for forming an EUV mask blank includes: a first sub-chamber for forming a multi-layer stack, above the ultra-low expansion substrate, for reflecting an extreme ultraviolet (EUV) light; and a second sub-chamber for forming a bi-layer absorber, formed above the multi-layer stack, for absorbing the EUV light at a wavelength of 13.5 nm provides a reflectivity of less than 1.9%.
    Type: Grant
    Filed: January 13, 2017
    Date of Patent: July 3, 2018
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Vinayak Vishwanath Hassan, Majeed Foad, Cara Beasley, Ralf Hofmann
  • Publication number: 20180158677
    Abstract: Embodiments described herein provide methods and apparatus for forming graphitic carbon such as graphene on a substrate. The method includes providing a precursor comprising a linear conjugated hydrocarbon, depositing a hydrocarbon layer from the precursor on the substrate, and forming graphene from the hydrocarbon layer by applying energy to the substrate. The precursor may include template molecules such as polynuclear aromatics, and may be deposited on the substrate by spinning on, by spraying, by flowing, by dipping, or by condensing. The energy may be applied as radiant energy, thermal energy, or plasma energy.
    Type: Application
    Filed: January 11, 2018
    Publication date: June 7, 2018
    Inventors: Cara BEASLEY, Ralf HOFMANN, Majeed A. FOAD
  • Patent number: 9905418
    Abstract: Embodiments described herein provide methods and apparatus for forming graphitic carbon such as graphene on a substrate. The method includes providing a precursor comprising a linear conjugated hydrocarbon, depositing a hydrocarbon layer from the precursor on the substrate, and forming graphene from the hydrocarbon layer by applying energy to the substrate. The precursor may include template molecules such as polynuclear aromatics, and may be deposited on the substrate by spinning on, by spraying, by flowing, by dipping, or by condensing. The energy may be applied as radiant energy, thermal energy, or plasma energy.
    Type: Grant
    Filed: February 8, 2017
    Date of Patent: February 27, 2018
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Cara Beasley, Ralf Hofmann, Majeed A. Foad
  • Patent number: 9739913
    Abstract: A method of manufacture of an extreme ultraviolet reflective element includes: providing a substrate; forming a multilayer stack on the substrate, the multilayer stack includes a plurality of reflective layer pairs having a first reflective layer and a second reflective layer for forming a Bragg reflector; and forming a capping layer on and over the multilayer stack, the capping layer formed from titanium oxide, ruthenium oxide, niobium oxide, ruthenium tungsten, ruthenium molybdenum, or ruthenium niobium, and the capping layer for protecting the multilayer stack by reducing oxidation and mechanical erosion.
    Type: Grant
    Filed: April 24, 2015
    Date of Patent: August 22, 2017
    Assignee: Applied Materials, Inc.
    Inventors: Cara Beasley, Ralf Hofmann, Majeed A. Foad, Rudy Beckstrom, III
  • Patent number: 9690016
    Abstract: An extreme ultraviolet reflective element and method of manufacture includes a substrate; a multilayer stack on the substrate, the multilayer stack includes a plurality of reflective layer pairs having a first reflective layer formed from silicon and a second reflective layer having a preventative layer separating a lower amorphous layer and an upper amorphous layer; and a capping layer on and over the multilayer stack for protecting the multilayer stack by reducing oxidation and mechanical erosion.
    Type: Grant
    Filed: April 24, 2015
    Date of Patent: June 27, 2017
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Ralf Hofmann, Cara Beasley, Vinayak Vishwanath Hassan, Majeed A. Foad
  • Publication number: 20170160632
    Abstract: An extreme ultraviolet (EUV) mask blank production system includes: a substrate handling vacuum chamber for creating a vacuum; a substrate handling platform, in the vacuum, for transporting an ultra-low expansion substrate loaded in the substrate handling vacuum chamber; and multiple sub-chambers, accessed by the substrate handling platform, for forming an EUV mask blank includes: a multi-layer stack, formed above the ultra-low expansion substrate, for reflecting an extreme ultraviolet (EUV) light, and an absorber layer, formed above the multi-layer stack, for absorbing the EUV light at a wavelength of 13.5 nm includes the absorber layer has a thickness of less than 80 nm and less than 2% reflectivity.
    Type: Application
    Filed: February 21, 2017
    Publication date: June 8, 2017
    Inventors: Vinayak Vishwanath Hassan, Majeed A. Foad, Cara Beasley, Ralf Hofmann
  • Publication number: 20170148631
    Abstract: Embodiments described herein provide methods and apparatus for forming graphitic carbon such as graphene on a substrate. The method includes providing a precursor comprising a linear conjugated hydrocarbon, depositing a hydrocarbon layer from the precursor on the substrate, and forming graphene from the hydrocarbon layer by applying energy to the substrate. The precursor may include template molecules such as polynuclear aromatics, and may be deposited on the substrate by spinning on, by spraying, by flowing, by dipping, or by condensing. The energy may be applied as radiant energy, thermal energy, or plasma energy.
    Type: Application
    Filed: February 8, 2017
    Publication date: May 25, 2017
    Inventors: Cara BEASLEY, Ralf HOFMANN, Majeed A. FOAD
  • Publication number: 20170131637
    Abstract: An apparatus and method of manufacture of an extreme ultraviolet reflective element includes: a substrate; a multilayer stack on the substrate, the multilayer stack includes a plurality of reflective layer pairs having a first reflective layer formed from silicon and a second reflective layer formed from niobium or niobium carbide for forming a Bragg reflector; and a capping layer on and over the multilayer stack for protecting the multilayer stack by reducing oxidation and mechanical erosion.
    Type: Application
    Filed: January 19, 2017
    Publication date: May 11, 2017
    Inventors: Ralf Hofmann, Vinayak Vishwanath Hassan, Cara Beasley, Majeed A. Foad
  • Publication number: 20170131627
    Abstract: An extreme ultraviolet (EUV) mask blank production system includes: a substrate handling vacuum chamber for creating a vacuum; a substrate handling platform, in the vacuum, for transporting an ultra-low expansion substrate loaded in the substrate handling vacuum chamber; and multiple sub-chambers, accessed by the substrate handling platform, for forming an EUV mask blank includes: a first sub-chamber for forming a multi-layer stack, above the ultra-low expansion substrate, for reflecting an extreme ultraviolet (EUV) light; and a second sub-chamber for forming a bi-layer absorber, formed above the multi-layer stack, for absorbing the EUV light at a wavelength of 13.5 nm provides a reflectivity of less than 1.9%.
    Type: Application
    Filed: January 13, 2017
    Publication date: May 11, 2017
    Inventors: Vinayak Vishwanath Hassan, Majeed Foad, Cara Beasley, Ralf Hofmann
  • Publication number: 20170115555
    Abstract: A processing system includes: a vacuum chamber; a plurality of processing sub-systems attached around the vacuum chamber; and a wafer handling system in the vacuum chamber for moving the wafer among the plurality of processing systems without exiting from a vacuum. A physical vapor deposition system for manufacturing an extreme ultraviolet blank comprising: a target comprising molybdenum, molybdenum alloy, or a combination thereof.
    Type: Application
    Filed: January 6, 2017
    Publication date: April 27, 2017
    Inventors: Ralf Hofmann, Cara Beasley, Majeed Foad