Abstract: Embodiments described herein provide methods and apparatus for forming graphitic carbon such as graphene on a substrate. The method includes providing a precursor comprising a linear conjugated hydrocarbon, depositing a hydrocarbon layer from the precursor on the substrate, and forming graphene from the hydrocarbon layer by applying energy to the substrate. The precursor may include template molecules such as polynuclear aromatics, and may be deposited on the substrate by spinning on, by spraying, by flowing, by dipping, or by condensing. The energy may be applied as radiant energy, thermal energy, or plasma energy.

Abstract: A processing system includes: a vacuum chamber; a plurality of processing systems attached around the vacuum chamber; and a wafer handling system in the vacuum chamber for moving the wafer among the plurality of processing systems without exiting from a vacuum. A physical vapor deposition system for manufacturing an extreme ultraviolet blank comprising: a target comprising molybdenum, molybdenum alloy, or a combination thereof.

Abstract: An integrated extreme ultraviolet (EUV) blank production system includes: a vacuum chamber for placing a substrate in a vacuum; a first deposition system for depositing a planarization layer having a planarized top surface over the substrate; and a second deposition system for depositing a multi-layer stack on the planarization layer without removing the substrate from the vacuum. The EUV blank is in an EUV lithography system includes: an extreme ultraviolet light source; a mirror for directing light from the EUV source; a reticle stage for placing a EUV mask blank with a planarization layer; and a wafer stage for placing a wafer. The EUV blank includes: a substrate; a planarization layer to compensate for imperfections related to the surface of the substrate, the planarization layer having a flat top surface; and a multi-layer stack on the planarization layer.

Abstract: An extreme ultraviolet mirror or blank production system includes: a first deposition system for depositing a planarization layer over a semiconductor substrate; a second deposition system for depositing an ultra-smooth layer over the planarization layer, the ultra-smooth layer having reorganized molecules; and a third deposition system for depositing a multi-layer stack over the ultra-smooth layer. The extreme ultraviolet blank includes: a substrate; a planarization layer over the substrate; an ultra-smooth layer over the planarization layer, the ultra-smooth layer having reorganized molecules; a multi-layer stack; and capping layers over the multi-layer stack. An extreme ultraviolet lithography system includes: an extreme ultraviolet light source; a mirror for directing light from the extreme ultraviolet light source; a reticle stage for placing an extreme ultraviolet mask blank with a planarization layer and an ultra-smooth layer over the planarization layer; and a wafer stage for placing a wafer.