Abstract: Techniques are provided herein for forming interconnect structures, such as conductive vias or contacts, that are protected from subsequent processing that includes reactive gas or plasma. A conductive via or contact within an interconnect layer may be formed with a capping layer having a different material to protect the underlying metal material from reacting with certain reactive gas or plasma elements. In some examples, a ruthenium capping layer is formed over a copper via to protect the copper. Other capping layer materials may include tungsten, cobalt, or molybdenum. In some embodiments, the entire conductive via may be formed using one of ruthenium, tungsten, cobalt, or molybdenum, to avoid the use of more reactive metals, such as copper. The capping layer (or less reactive metals) are used to protect the via during a barrier layer doping process that uses a gas or plasma including a chalcogen element (e.g., sulfur and/or selenium).

Abstract: An integrated circuit includes a base with one or more semiconductor devices. An insulating material is over the base and an interconnect structure is over the base. The interconnect structure includes vertical conductors extending through the insulating material in a spaced-apart arrangement. The interconnect structure comprises a conductor and a chalcogen, the chalcogen present in an amount of up to 5 atomic percent. In some embodiments, the chalcogen is present in an amount less than 2 atomic percent or less than 1 atomic percent.

Abstract: An integrated circuit includes a base with one or more semiconductor devices. An insulating material is over the base and an interconnect structure is over the base. The interconnect structure includes vertical conductors extending through the insulating material in a spaced-apart arrangement. The interconnect structure comprises a conductor and a chalcogen, the chalcogen present in an amount of up to 5 atomic percent. In some embodiments, the chalcogen is present in an amount less than 2 atomic percent or less than 1 atomic percent.

Abstract: A magnetic memory device comprising a plurality of memory cells is disclosed. The memory device includes an array of memory cells where each memory cell includes a first material layer having a ferromagnetic material, a second material layer having ruthenium, and a third material layer having bismuth and/or antimony. The second material layer is sandwiched between the first material layer and the third material in a stacked configuration.