Abstract: Disclosed herein are novel compounds and methods for the treatment of disorders of the lower urinary tract. The novel compounds are diarylalkylpiperazine derivatives. The methods comprise the administration of the novel compounds of the invention, and other compounds that bind to 5HT1A receptors, for treating disorders of the lower urinary tract.

Abstract: N,N-Disubstituted diazocycloalkanes of the formula I 1

Abstract: Described are novel 1-phenylalkylpiperazines having affinity for serotonergic receptors. These compounds and their enantiomers, diastereoisomers, N-piperazine oxides, polymorphs, solvates and pharmaceutically acceptable salts are useful in the treatment of patients with neuromuscular dysfunction of the lower urinary tract and diseases related to 5-HT1A receptor activity. Also described are the preparation of the compounds and the pharmaceutical compositions containing them.

Abstract: Described are novel substituted phenylalkylamines and pyridylalkylamines having affinity for serotonergic receptors. These compounds and their enantiomers, diastereoisomers, N-oxides, polymorphs, solvates and pharmaceutically acceptable salts are useful in the treatment of patients with neuromuscular dysfunction of the lower urinary tract and diseases related to 5-HT1A receptor. Also described are the preparation of the compounds and the pharmaceutical compositions containing them.

Abstract: The invention relates to novel N-(substituted phenyl)-N′-[&ohgr;-(3-substituted phenyl-4-isoxazolecarbonylamino)alkyl]piperazines, their N-oxides, and pharmaceutically acceptable salts thereof. The compounds are endowed with enhanced selectivity for alpha1-adrenergic receptors and a low activity in lowering blood pressure. The compounds are useful in the treatment of obstructive syndromes of the lower urinary tract, including benign prostatic hyperplasia (BPH), and in the treatment of lower urinary tract symptoms (LUTS) and neurogenic lower urinary tract dysfunction (NLUTD), and other conditions. The compounds may be administered alone or in combination with an anticholinergic compound.

Abstract: Described are novel N-acylated heterocycle derivatives having affinity for serotonergic receptors. These compounds and their enantiomers, diastercoisomers, N-oxides, polymorphs, solvates and pharmaceutically acceptable salts are useful in the treatment of patients with neuromuscular dysfunction of the lower urinary tract and diseases related to 5-HT1A receptor.

Abstract: Described are compositions comprising a muscarinic receptor antagonist and an N-acylated heterocycle derivative having affinity for serotonergic receptors, and enantiomers, diastereoisomers, N-oxides, polymorphs, solvates and pharmaceutically acceptable salts thereof. The combination of a muscarinic receptor antagonist and an N-acylated heterocycle, or an enantiomer, diastereoisomer, N-oxide, polymorph, solvate or pharmaceutically acceptable salt thereof, is useful in the treatment of patients with neuromuscular dysfunction of the lower urinary tract and diseases related to 5-HT1A receptors.

Abstract: A process for forming an integrated circuit calls for the provision of at least one matrix of non-volatile memory cells including an intermediate dielectric multilayer comprising a lower silicon oxide layer, an intermediate silicon nitride layer and an upper silicon oxide layer. The process calls for the simultaneous provision in zones peripheral to the memory cells of at least one first and one second transistor type each having a gate dielectric of a first and a second thickness respectively. After formation of the floating gate of the cells with a gate oxide layer and a polycrystalline silicon layer and the formation of the lower silicon oxide layer and of the intermediate silicon nitride layer, the process in accordance with the present invention includes removal of said layers from the zones peripheral to the matrix, and formation of a first silicon oxide layer over the substrate in the areas of both types of transistor.

Abstract: A flash EEPROM having an array of memory cells which include a common source line connecting together source electrodes of the memory cells. A resistive feedback element is coupled in series between the common source line and a positive potential when the memory cells must be electrically erased. The Flash EEPROM includes a voltage limiting circuit coupled to the common source line for limiting the potential of the common source line to be prescribed maximum value lower than the positive potential.

Abstract: The present invention is directed to novel 1-(N-phenylaminoalkyl)piperazine derivatives substituted at the position 2 of the phenyl ring. Pharmaceutical compositions comprising the compounds of the invention also are contemplated. The compounds of the present invention also are contemplated for use in treating neuromuscular dysfunction of the lower urinary tract in a mammal.

Abstract: The invention is directed to compounds of Formula I: 1

Abstract: The invention relates to novel N-(substituted phenyl)-N′-[&ohgr;-(5-substituted-7-oxo-7H-thieno[3,2-b]pyran-3-carbonylamino)alkyl]piperazines their N-oxides and pharmaceutically acceptable salts thereof. The compounds are endowed with enhanced selectivity for alpha1-adrenergic receptors and a low activity in lowering blood pressure. The compounds are useful in the treatment of obstructive syndromes of the lower urinary tract, including benign prostatic hyperplasia (BPH), and in the treatment of lower urinary tract symptoms (LUTS) and neutogenic lower urinary tract dysfunction (NLUTD), and other conditions. The compounds may be administered alone or in combination with an anticholinergic compound.

Abstract: The invention relates to novel N-(substituted phenyl)-N′-[(&ohgr;-(3-substituted phenyl-4-isoxazolecarbonylamino)alkyl]piperazines, their N-oxides, and pharmaceutically acceptable salts thereof. The compounds are endowed with enhanced selectivity for alpha1-adrenergic receptors and a low activity in lowering blood pressure. The compounds are useful in the treatment of obstructive syndromes of the lower urinary tract, including benign prostatic hyperplasia (BPH), and in the treatment of lower urinary tract symptoms (LUTS) and neurogenic lower urinary tract dysfunction (NLUTD), and other conditions. The compounds may be administered alone or in combination with an anticholinergic compound.

Abstract: The invention relates to novel benzopyran derivatives of formula I, their N-oxides and pharmaceutically acceptable salts thereof. The compounds are endowed with enhanced selectivity for alpha1-adrenergic receptors and a low activity in lowering blood pressure. The compounds are useful in the treatment of obstructive syndromes of the lower urinary tract, including benign prostatic hyperplasia (BPH), and in the treatment of lower urinary tract symptoms (LUTS), neurogenic lower urinary tract dysfunction (NLUTD), and other conditions.

Abstract: The present invention is directed to novel 1-(N-phenylaminoalkyl)piperazine derivatives substituted at the position 2 of the phenyl ring. Pharmaceutical compositions comprising the compounds of the invention also are contemplated. The compounds of the present invention also are contemplated for use in treating neuromuscular dysfunction of the lower urinary tract in a mammal.

Abstract: The invention relates to novel N-(substituted phenyl)-N′-[&ohgr;-(5-substituted-7-oxo-7H-thieno[3,2-b]pyran-3-carbonylamino)alkyl]piperazines their N-oxides and pharmaceutically acceptable salts thereof. The compounds are endowed with enhanced selectivity for alpha1-adrenergic receptors and a low activity in lowering blood pressure. The compounds are useful in the treatment of obstructive syndromes of the lower urinary tract, including benign prostatic hyperplasia (BPH), and in the treatment of lower urinary tract symptoms (LUTS) and neurogenic lower urinary tract dysfunction (NLUTD). The compounds are also useful in the treatment of excessive intraocular pressure, cardiac arrhythmia, erectile dysfunction, sexual dysfunction, and for inhibiting cholesterol synthesis or reducing sympathetically mediated pain.

Abstract: The invention relates to novel N-(substituted phenyl)-N′-[&ohgr;-(3-substituted phenyl-4-isoxazolecarbonylamino)alkyl]piperazines, their N-oxides, and pharmaceutically acceptable salts thereof. The compounds are endowed with enhanced selectivity for alpha1-adrenergic receptors and a low activity in lowering blood pressure. The compounds are useful in the treatment of obstructive syndromes of the lower urinary tract, including benign prostatic hyperplasia (BPH), and in the treatment of lower urinary tract symptoms (LUTS) and neurogenic lower urinary tract dysfunction (NLUTD), and other conditions.

Abstract: A flash EEPROM memory cell comprises source and drain regions defining a channel region therebetween, a floating gate and a control gate. The source and drain regions are first and second doped semiconductor regions of a first conductivity type formed in a first active area region of a semiconductor material layer of a second conductivity type; the control gate comprises a third doped semiconductor region of the first conductivity type formed in a second active area region of the semiconductor material layer; and the floating gate comprises a polysilicon strip insulatively disposed over the channel region and insulatively extending over the third doped semiconductor region.

Abstract: A process for forming an integrated circuit calls for the provision of at least one matrix of non-volatile memory cells including an intermediate dielectric multilayer comprising a lower silicon oxide layer, an intermediate silicon nitride layer and an upper silicon oxide layer. The process calls for the simultaneous provision in zones peripheral to the memory cells of at least one first and one second transistor type each having a gate dielectric of a first and a second thickness respectively. After formation of the floating gate of the cells with a gate oxide layer and a polycrystalline silicon layer and the formation of the lower silicon oxide layer and of the intermediate silicon nitride layer, the process in accordance with the present invention includes removal of said layers from the zones peripheral to the matrix, and formation of a first silicon oxide layer over the substrate in the areas of both types of transistor.